CN115570689B - Crystal cut-off device, crystal growth equipment and crystal cut-off method - Google Patents

Crystal cut-off device, crystal growth equipment and crystal cut-off method Download PDF

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Publication number
CN115570689B
CN115570689B CN202211442615.0A CN202211442615A CN115570689B CN 115570689 B CN115570689 B CN 115570689B CN 202211442615 A CN202211442615 A CN 202211442615A CN 115570689 B CN115570689 B CN 115570689B
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crystal
piece
trigger
controlled
cutting
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CN115570689A (en
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欧阳鹏根
曹建伟
朱亮
傅林坚
叶钢飞
石刚
魏怡凡
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Zhejiang Jingsheng Mechanical and Electrical Co Ltd
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Zhejiang Jingsheng Mechanical and Electrical Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention provides a crystal truncation device, crystal growth equipment and a crystal truncation method. The crystal cut-off device comprises a cut-off unit which can be movably arranged in the crystal growth furnace; the cutting unit comprises a controlled piece and a trigger piece which are matched, and further comprises a shearing assembly with a preparation shape and a shearing shape, the controlled piece is connected with the shearing assembly and can change the posture of the controlled piece relative to the trigger piece so as to switch the shape of the shearing assembly, and the trigger piece is used for contacting the crystal; the trigger part limits and stops the controlled part to limit the shearing assembly to maintain the preparation state, and the controlled part is released when the trigger part is pressed by the crystal to enable the shearing assembly to be switched to the shearing state.

Description

Crystal cut-off device, crystal growth equipment and crystal cut-off method
Technical Field
The invention relates to the technical field of crystal preparation, in particular to a crystal truncation device, crystal growth equipment and a crystal truncation method.
Background
In the photovoltaic industry and the semiconductor industry, artificial crystals are commonly used raw materials, for example, sapphire substrates prepared by a kyropoulos method or various modified kyropoulos methods are widely used in current LED substrates, and the preparation of desired crystals by the kyropoulos method includes a step of cutting off a seed crystal and an ingot. At present generally with the manual operation mode with the help of cutting brilliant instrument and cutting off the seed crystal, there are potential safety hazard and the inconvenient problem of operation in this kind of brilliant mode of cutting, need open the bell when cutting brilliant, operating personnel need stretch into the stove with the arm and go on, receive the interior waste heat of stove easily and roast the injury, the bell is opened inconveniently, influences the operating efficiency, and cuts brilliant instrument and have the possibility that drops carelessly.
Disclosure of Invention
In view of this, the invention provides a crystal cutting device, which can automatically cut seed crystals without opening a furnace cover, and does not need personnel to manually cut the crystals by using a crystal cutting tool.
The invention provides a crystal truncation device, which comprises a connecting unit and a truncation unit, wherein at least part of the connecting unit is arranged in a crystal growth furnace, and the truncation unit is arranged in the connecting unit and positioned in the crystal growth furnace; the cutting unit comprises a controlled piece and a trigger piece which are matched, and further comprises a shearing assembly with a preparation shape and a shearing shape, the controlled piece is connected with the shearing assembly and can change the posture of the controlled piece relative to the trigger piece so as to switch the shape of the shearing assembly, and the trigger piece is used for contacting the crystal; the trigger part limits and stops the controlled part to limit the shearing assembly to maintain the preparation state, and the controlled part is released when the trigger part is pressed by the crystal to enable the shearing assembly to be switched to the shearing state.
In one embodiment, the shearing assembly comprises a main impact piece and an auxiliary impact piece which are movably connected, and the truncation unit further comprises an elastic energy storage piece which is connected with the main impact piece and the auxiliary impact piece; the elastic energy storage part is pressed to deform when the shearing assembly is in the preparation state, the crystal is allowed to be arranged between the main impact part and the auxiliary impact part, and the elastic energy storage part deforms and resets when the controlled part is separated from the trigger part and drives the main impact part and the auxiliary impact part to be relatively close to each other.
So set up, elastic energy storage spare is in when preparing the form accumulating elastic potential energy at shearing the subassembly, and in case controlled spare break away from trigger part spacing after alright release elastic potential energy to drive vice striking piece fast and be close to main striking piece, the crystal is cuted jointly to the two, need not to switch the configuration drive device for shearing the form of subassembly after setting up elastic energy storage spare, elastic energy storage spare can play the speed that improves vice striking piece and main striking piece striking crystal.
In one embodiment, the main impact piece is hinged with the auxiliary impact piece, the trigger piece is movably arranged on one of the main impact piece and the auxiliary impact piece, and the controlled piece is fixedly arranged on the other of the main impact piece and the auxiliary impact piece; when the shearing assembly is in a prepared state, the trigger part is hooked with the controlled part, the elastic energy storage part drives the trigger part to be abutted and matched with the controlled part, and the trigger part is pressed by the crystal and moves relative to the main impact part or the auxiliary impact part bearing the trigger part so as to be separated from and release the controlled part.
So set up, trigger piece receives the controlling part by spacing backstop to breaking away from the state change process that releases receiving the controlling part simple and high-efficient, no matter the two forms the butt cooperation or breaks away from each other, all controls more easily.
In one embodiment, a crystal cutting and placing inlet is formed between the main impact piece and the auxiliary impact piece, the middle part of the trigger piece is hinged with the main impact piece, and the controlled piece is fixedly arranged on the auxiliary impact piece; the two ends of the trigger piece are respectively provided with a trigger part and a hooking part, the trigger part extends to the crystal cutting entrance, and the hooking part extends to the auxiliary impact piece.
So set up, the crystal can be in order to trigger part action pressure promptly after arranging in and cut the brilliant income mouth, from this the shearing subassembly can be in the crystal and has arranged in and cut the brilliant income mouth of putting in the state of putting the income mouth of putting, ensures that the crystal can be collided and broken by main striking piece and vice striking piece combined action, and can not cause crystal and main striking portion or vice striking portion to miss each other for the cutting off of crystal is easier, the success rate is higher.
In one embodiment, the main striking piece and the auxiliary striking piece are oppositely arranged and are respectively convexly provided with a first pivot part and a second pivot part which are protruded towards each other, and the main striking piece and the auxiliary striking piece are hinged with the second pivot part through the first pivot part; a crystal cutting and placing inlet is formed between the main impact piece and the auxiliary impact piece, two ends of the elastic energy storage piece are respectively connected with the main impact piece and the auxiliary impact piece, a pivoting center is formed between the first pivoting part and the second pivoting part, and the pivoting center is located between the crystal cutting and placing inlet and the elastic energy storage piece.
So set up, the deformation that resets of elastic energy storage spare can put the reducing closed phase adaptation of entry with cutting the brilliant, and elastic energy storage spare deformation release elastic potential energy simultaneously can drive and cut the brilliant entry closure of putting, and elastic energy storage spare acts on the power that main striking spare and vice striking spare can be converted in real time into the power that main striking spare sheared the striking crystal jointly with vice striking spare, and the form change efficiency of shearing the subassembly is higher.
In one embodiment, the trigger is hooked with the controlled component at one side of the first pivot part and the second pivot part, which faces away from the wafer-cutting inlet.
So set up, trigger piece and controlled piece form to support to hold the cooperation after, main striking piece and vice striking piece can more stably reliably keep the compression positioning action to elastic energy storage piece, are favorable to maintaining the structural stability of shearing subassembly under the preparation form, avoid it because of the slight disturbance of outside when the crystal is not put into the brilliant putting entry of surely putting into the brilliant putting entry of cutting.
In one embodiment, the crystal cutting device further comprises a pushing driving part, the pushing driving part is connected with the cutting unit and at least can push the triggering part to move close to the crystal in the crystal growing furnace so as to press the crystal.
So set up, the propulsion driving piece can drive the trigger piece after crystal growth is accomplished and be close to the crystal and contact with it, can avoid cutting the unit and lead to the fact adverse effect to crystal growth from this to and prevent to cut the upper shaft lever interference among unit and the crystal growth equipment.
In one embodiment, the severing unit comprises a carriage mounted to the connecting unit, the advancing drive is mounted to the carriage, the cutting assembly is connected to the displacement output of the advancing drive, and the trigger is movably connected to the cutting assembly.
So set up, the structure of cuting the unit is compacter, the space region that occupies is littleer, and propulsion drive spare, shearing module and trigger piece overall arrangement in cuting the unit is simpler, and installs convenience more saves time.
In one embodiment, the crystal cut-off device further comprises a reset driving part, wherein the reset driving part is connected with the cut-off unit and at least can drive the trigger part to move and drive the trigger part to form limit fit with the controlled part, so that the form of the shearing assembly is switched to the preparation form.
So set up, the driving piece that resets can drive the trigger piece under the prerequisite of not opening crystal growth stove bell automatically and resume to the state that spacing backstop received the controlling part again to realize cutting assembly by the switching that resets of shearing form to preparing the form after the crystal is sheared and is accomplished, need not the manual participation of personnel and can accomplish, greatly improved the crystal and cut the convenience of use of device.
In one embodiment, the shearing assembly comprises a main impact piece and an auxiliary impact piece which are movably connected, the trigger piece is movably arranged on the main impact piece, the controlled piece is connected with the auxiliary impact piece in a follow-up manner and can move in a combined manner, and the reset driving piece is connected with the trigger piece in a driving manner; the reset driving piece can drive the triggering piece to hook the controlled piece, and drives the triggering piece to be abutted and matched with the controlled piece when the auxiliary impact piece is reset to the position corresponding to the preparation shape.
So set up, the driving piece that resets colludes through the trigger piece and receives the controlling part, makes vice striking piece follow the controlled part motion that resets in order to accomplish the shearing module and switch to resetting of preparing the form, and vice striking piece is more sensitive quick to the action response of driving piece and trigger piece that resets, consequently makes the switching process that resets save time more easily.
In one embodiment, the crystal cutting device further comprises a lifting driving unit, the connecting unit is mounted at the displacement output end of the lifting driving unit, and the lifting driving unit is used for driving the connecting unit to move along a preset track, so that the cutting unit moves to a preset crystal cutting height or reaches one side of the inner wall of a furnace cover of the crystal growth furnace.
So set up, cut the unit and can be driven to predetermineeing and cut brilliant height thereby for cutting the brilliant preparation, after the crystal is cut and is accomplished, cut the unit and follow the linkage unit and move to bell inner wall one side and can avoid it to receive the interior waste heat of crystal growth stove and roast.
The invention also provides crystal growth equipment which comprises a crystal growth furnace and the crystal truncation device, wherein at least part of the connecting unit is arranged in the crystal growth furnace, and the truncation unit is connected with the part of the connecting unit, which is positioned in the crystal growth furnace.
The invention also provides a crystal truncation method based on the crystal growth equipment, which comprises the following steps:
s10, adjusting the height of the cutting unit in the crystal growth furnace to enable the shearing assembly to reach a preset crystal cutting height;
s20, controlling the propelling driving piece to propel the triggering piece to move so that the triggering piece contacts the crystal;
s30, the crystal drives the trigger piece to release the controlled piece, so that the shearing assembly is switched to a shearing form and the crystal is sheared;
s40, opening the crystal growth furnace, and taking out the crystal bar and the seed crystal.
Compared with the prior art, the crystal truncation device, the crystal growth equipment and the crystal truncation method provided by the invention at least have the following beneficial effects: the seed crystal is automatically cut under the condition that the furnace cover is not opened, the time and the production rhythm for opening the furnace cover are saved, and the labor cost is saved; the labor load and the probability of injury of personnel during operation are reduced, the hidden danger that the crystal cutting tool falls into the crystal growth furnace is eliminated, the production efficiency is improved, and the crystal cutting process is safer; the crystal shearing by the shearing assembly can be completed in a very short time, and the cutting is quicker and more efficient; the form switching control of the shearing assembly is more accurate, and the shearing assembly can be triggered to shear the crystal only after the triggering piece receives the crystal pressure, so that the situation that the crystal cannot be sheared after the shearing assembly is switched to the state accidentally can be avoided.
Drawings
FIG. 1 is a schematic view of a crystal growing apparatus according to an embodiment of the present invention;
FIG. 2 isbase:Sub>A schematic view of the crystal growing apparatus of FIG. 1 taken along plane A-A;
FIG. 3 is a schematic view of a crystal truncation apparatus according to an embodiment of the present invention;
fig. 4 is a partially enlarged schematic view of the crystal truncation device of fig. 3 at S.
Description of the reference numerals:
100. a crystal cut-off device; 200. a crystal growth furnace; 210. a furnace cover; 220. a furnace body; 230. furnace felts; 240. a crucible; 300. an upper shaft lever; 410. seed crystal; 420. crystal bar;
10. mounting the main body; 11. a lifting drive unit; 12. an electric cylinder; 13. a lifting frame; 20. a connection unit; 21. a drive shaft; 22. sealing sleeves; 231. a copper sleeve; 232. pressing a sleeve;
30. a truncation unit; 31. a controlled member; 311. a fixed part; 312. a side warping part; 32. a trigger; 321. a main body portion; 322. a trigger section; 323. a hooking part; 33. a shearing assembly; 331. a primary strike; 3311. a main striking section; 3312. a first pivot part; 332. a secondary strike member; 3321. an auxiliary striking part; 3322. a second pivot part; 333. cutting a crystal and placing at an inlet; 34. a central pivot; 35. an elastic energy storage member; 36. a carrier; 37. the drive member is advanced.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "or/and" includes any and all combinations of one or more of the associated listed items.
The invention provides a crystal cutting device 100, and also provides crystal growth equipment using the crystal cutting device 100 and a crystal cutting method based on the crystal cutting device 100. The crystal growth equipment is an industrial facility for growing crystals by using a kyropoulos method, a czochralski method or a modified kyropoulos method, and can be used for preparing sapphire crystals, and the obtained sapphire crystal product can be used in the photovoltaic industry or the semiconductor industry, such as LED display substrates. Other types of crystals can of course also be prepared.
Referring to fig. 1-2, the crystal growth apparatus provided by the present invention includes a crystal growth furnace 200, a crucible 240 disposed in the crystal growth furnace 200, a furnace felt 230, and a crystal cutting device 100 provided by the present invention. The crystal growth furnace 200 includes a hollow furnace body 220 having an opening at the end thereof, and a furnace cover 210 covering the end of the furnace body 220 to close the opening of the furnace body 220, a crucible 240 disposed at the bottom of the furnace body 220 and having an opening of the crucible 240 facing the furnace cover 210, a furnace felt 230 surrounding the crucible 240, and a hollow region surrounded and formed in the furnace body 220.
Further, the crystal growth apparatus further comprises an upper shaft 300, a part of the upper shaft 300 penetrates through the furnace cover 210 and extends into the furnace body 220, and the part of the upper shaft 300 extending into the furnace body 220 is used for developing crystals and enabling the crystals to form seed crystals 410. Finally, after the seed crystal 410 is formed, the seed crystal 410 is in a columnar structure, one end of the seed crystal 410 is connected with the end of the upper shaft 300 extending into the furnace body 220, the other end is connected with the crystal rod 420, and the crystal rod 420 is positioned in the crucible 240. In addition, the upper shaft 300 may also pull the seed crystal 410 after the seed crystal 410 is cut off and stir the molten material in the crucible 240 during the development of the seed crystal 410.
The crystal cutting device 100 provided by the invention comprises a cutting unit 30 movably arranged in a crystal growth furnace 200, wherein the cutting unit 30 applies pressure to the outer peripheral wall of a seed crystal 410 to ensure that the seed crystal 410 is sheared and broken. The cutting unit 30 includes a cutting assembly 33 having a preliminary configuration and a cutting configuration, the cutting assembly 33 being capable of forming a seed crystal discharge opening 333 for allowing the seed crystal 410 to pass therethrough or to be disposed therein, the seed crystal discharge opening 333 being open to allow the seed crystal 410 to pass therethrough or to be disposed therein smoothly when the cutting assembly 33 is in the preliminary configuration.
The opening of the crystal cutting and discharging inlet 333 is smaller in the shearing mode than the opening of the crystal cutting and discharging inlet 333 in the preliminary mode. Therefore, when the seed crystal 410 is inserted or placed in the crystal-cutting inlet 333, the seed crystal 410 can be cut by switching the cutting unit 33 from the preliminary mode to the cutting mode and reducing or closing the crystal-cutting inlet 333.
In some embodiments, the crystal cutting apparatus 100 further includes a connection unit 20 at least partially disposed in the crystal growth furnace 200, and the cutting unit 30 is mounted to a portion of the connection unit 20 located in the crystal growth furnace 200. Referring to fig. 3 to 4, the connection unit 20 includes a driving shaft 21 extending toward the bottom of the furnace body 220 and the crucible 240, the cutting unit 30 includes a carrier 36, the carrier 36 is mounted on an end of the driving shaft 21 extending into the furnace body 220, and the shearing assembly 33 is mounted on the carrier 36.
Further, the crystal sectioning apparatus 100 further includes a mounting body 10 for carrying the connection unit 20. In some embodiments, the mounting body 10 is fixed outside the crystal growth furnace 200, and the transmission shaft 21 penetrates through the furnace cover 210 and extends into the furnace body 220, wherein one end of the transmission shaft 21 outside the crystal growth furnace 200 is connected to the mounting body 10. Alternatively, the mounting body 10 is fixed to an outer end surface of the furnace cover 210 facing away from the crucible 240 and the bottom of the furnace body 220, and protrudes outward in a direction perpendicular to the furnace cover 210.
It is understood that the mounting body 10 may be fixed to other positions outside the crystal growth furnace 200, and is not limited to being fixed to the outer end surface of the furnace cover 210, and even the mounting body 10 does not have to be connected to the furnace cover 210 as long as it can maintain a fixed relative position with the crystal growth furnace 200.
The mounting body 10 can drive the transmission shaft 21 to move up and down relative to the crystal growth furnace 200 so as to change the length of the transmission shaft 21 extending into the furnace body 220 and thus change the height of the cutting unit 30 in the crystal growth furnace 200. After the growth and development of the seed crystal 410 are completed, the mounting body 10 drives the transmission shaft 21 to enable the cutting unit 30 to reach the preset crystal cutting height, after the seed crystal 410 is cut, the mounting body 10 drives the transmission shaft 21 to move upwards, and the transmission shaft 21 lifts the cutting unit 30 to the side, facing the bottom of the furnace body 220 and the inner end face of the crucible 240, of the furnace cover 210.
The height position of the preset crystal cutting height in the furnace body 220 is not particularly limited in the present invention, as long as the shearing assembly 33 is located at a height position below the upper shaft 300 and within the height range of the seed crystal 410, so that the seed crystal 410 passes through or is placed in the crystal cutting discharge inlet 333.
Alternatively, the transmission shaft 21 has a rising limit position, and the intercepting unit 30 reaches just to the side of the inner end surface of the cover 210 when the mounting body 10 drives the transmission shaft 21 to move to the rising limit position.
Referring to fig. 3-4, the installation body 10 includes a lifting driving unit 11 for generating power required to lift the transmission shaft 21, an electric cylinder 12 connected to the lifting driving unit 11, and a lifting frame 13 connected to an output end of the electric cylinder 12, wherein the lifting driving unit 11 may be a motor connected to the electric cylinder 12 and operating in cooperation therewith, and the electric cylinder 12 can convert the power of the lifting driving unit 11 into a lifting motion of the lifting frame 13 along a linear track.
Optionally, the electric cylinder 12 extends out of the furnace cover 210 along a direction perpendicular to the furnace cover 210, one end of the electric cylinder is connected to the elevation driving unit 11, the other end of the electric cylinder is fixedly connected to the outer end face of the furnace cover 210 away from the crucible 240, and the lifting frame 13 can move close to or away from the furnace cover 210 along a linear track perpendicular to the furnace cover 210 to drive the transmission shaft 21 to perform linear elevation movement along the axis of the transmission shaft.
Optionally, the upper shaft rod 300 penetrates through the center of the furnace cover 210, the axis of the upper shaft rod is coaxial with the crystal growth furnace 200, an offset distance is provided between the position where the transmission shaft 21 penetrates through the furnace cover 210 and the center of the furnace cover 210, and the transmission shaft 21 and the upper shaft rod 300 are parallel to each other and have an offset distance therebetween. So that the drive shaft 21 and thus the cutoff unit 30 do not interfere with the upper shaft 300 during the lifting movement.
In some embodiments, the crystal growth apparatus further comprises a cooling fluid path capable of receiving and storing a cooling medium, a wall of the cooling fluid path is in thermally conductive communication with the furnace lid 210, and heat in the furnace lid 210 can be carried away by the cooling medium as the cooling medium flows through the portion of the cooling fluid path in thermally conductive communication with the furnace lid 210, whereby the temperature of the furnace lid 210 is reduced. After the transmission shaft 21 reaches the rising limit position, the furnace cover 210 and the surrounding temperature can be maintained at about 40 ℃, and the cutoff unit 30 positioned below the inner end surface of the furnace cover 210 is not easily damaged by the residual heat in the furnace body 220.
The furnace cover 210 and the cutoff unit 30 can be further lowered in temperature as the cooling medium continues to flow through the cooling liquid path. The cooling medium may be water, cooling oil, or another fluid having a heat absorbing ability, and the present invention is not limited to this.
In some embodiments, the inner end surface of the furnace cover 210 is provided with a holding chamber recessed toward the outer side of the furnace cover 210, and the cut-off unit 30 can be just accommodated in the holding chamber when the transmission shaft 21 is driven to the ascending limit position by the ascending and descending driving unit 11. Since the holding chamber is far from the high temperature region in the furnace body 220, the cutoff unit 30 can prevent the residual heat from being burned in the holding chamber and gradually cool down.
Alternatively, the wall of the coolant line can be connected in a thermally conductive manner to the wall of the containment chamber, or the coolant line can extend through the containment chamber. Therefore, when the transmission shaft 21 is located at the ascending limit position, the cutting unit 30 has better cooling effect and faster cooling speed.
It should be understood that, in other embodiments, the mounting body 10 may also be fixedly mounted on the inner end surface of the furnace cover 210, and the transmission shaft 21 may also be completely disposed in the crystal growth furnace 200, as long as the mounting body 10 can drive the transmission shaft 21 to move up and down, and drive the cutting unit 30 to move up and down, so as to change the height of the cutting unit 30 in the furnace body 220. The installation body 10 is fixed outside the crystal growth furnace 200 and the transmission shaft 21 penetrates the furnace cover 210, because the installation allows the transmission shaft 21 and the cutting unit 30 to move up and down within a larger stroke range.
In some embodiments, the connection unit 20 further includes a sealing sleeve 22 disposed around the transmission shaft 21, the sealing sleeve 22 forms a sealing fit with the furnace cover 210, and the hollow area communicates with a through hole formed on the furnace cover 210 for the transmission shaft 21 to extend into the furnace body 220. The sealing sleeve 22 forms a movable sealing fit with the outer wall of the transmission shaft 21, and optionally, the sealing sleeve 22 is fixedly arranged on the furnace cover 210 and can slidably sleeve the transmission shaft 21 along the axial direction of the transmission shaft 21 so as to form a sliding sealing fit with the transmission shaft 21.
Optionally, the connection unit 20 further includes a copper sleeve 231 and a pressing sleeve 232 that are also sleeved on the transmission shaft 21, the copper sleeve 231 is fixedly mounted on the outer end surface of the furnace cover 210, and the pressing sleeve 232 and the copper sleeve 231 clamp the fixed sealing sleeve 22 together. Sealing rings or sealing fillers are arranged between the copper sleeve 231 and the sealing sleeve 22 and between the pressing sleeve 232 and the sealing sleeve 22, and both the copper sleeve 231 and the pressing sleeve 232 can slide along the axis of the transmission shaft 21 relative to the transmission shaft 21.
In order to reduce the labor of the personnel and realize the automatic crystal cutting operation by the crystal cutting device 100 without opening the furnace cover 210, the cutting unit 30 further comprises a trigger part movably connected with the cutting assembly 33 and a controlled part 31 which is connected with the cutting assembly 33 and can drive the cutting assembly 33 to switch the shape thereof by self movement. The trigger piece and the controlled piece 31 are matched with each other, and the trigger piece and the controlled piece can form abutting fit connection and can also be separated from each other. The change of the connection state between the triggering member and the controlled member 31 corresponds to different forms of the shearing assembly 33.
The trigger is used to contact the crystal, specifically the seed crystal 410. When the trigger does not contact the seed crystal 410, or just contacts the seed crystal 410 but does not generate a large interaction force with the seed crystal 410, the trigger abuts against the controlled part 31 so as to limit and stop the controlled part 31 to move, and at the moment, the shearing assembly 33 can be limited and fixed along with the controlled part 31 and keep a preparation shape; when the trigger contacts, impacts the seed crystal 410 or generates a large interaction force with the seed crystal 410, the trigger moves relative to the shearing assembly 33 and releases the controlled piece 31, and the shearing assembly 33 moves synchronously along with the controlled piece 31 separating and moving away from the trigger, thereby switching to the shearing state.
Referring again to fig. 3-4, in some embodiments, the shear assembly 33 includes a primary striking member 331 and a secondary striking member 332 hinged to each other, and an elastic energy storage member 35 connecting the primary striking member 331 and the secondary striking member 332. The trigger member is movably mounted to the primary striker member 331, and the controlled member 31 is integrally connected to the secondary striker member 332 for conjoint movement as a unit. A seed-crystal-cutting inlet 333 is formed between the main striking member 331 and the sub striking member 332, and the main striking member 331 and the sub striking member 332 hold the peripheral wall of the seed crystal 410 by cooperative collision to shear the seed crystal 410.
When the cutting assembly 33 is in the ready state, since the triggering member and the controlled member 31 are just in abutting engagement, the degree of freedom of movement of the triggering member relative to the main striking member 331 is also limited, so that the triggering member and the controlled member 31 maintain a relatively fixed state, and at the same time, the main striking member 331 and the auxiliary striking member 332 also maintain a relatively fixed state. The elastic energy storage member 35 is in a compressed and deformed state, and although elastic potential energy is accumulated, the elastic energy storage member cannot overcome the limit cooperation effect of the trigger member on the controlled member 31, so that the elastic energy storage member cannot be deformed.
When the pressure of the seed crystal 410 on the trigger is increased to a level sufficient to overcome the abutting engagement between the trigger and the controlled member 31, the trigger moves relative to the controlled member 31 and the main striking member 331, thereby releasing the controlled member 31. Once the controlled member 31 loses the limit stop function of the trigger member, the elastic energy storage member 35 immediately releases its elastic potential energy to drive the secondary impact member 332 to rotate relative to the primary impact member 331, during which the opening degree of the crystal-cutting inlet 333 is reduced, and the force of the elastic energy storage member 35 acting on the secondary impact member 332 is converted into the force of the secondary impact member 332 impacting the seed crystal 410. The portion of primary strike 331 and the portion of secondary strike 332 that ultimately form crystal-cutting input 333 are in relatively close proximity, closing crystal-cutting input 333 and cooperating to pinch off seed crystal 410.
In some embodiments, the trigger and the controlled element 31 are hooked to each other to form a holding fit. Specifically, the triggering member includes a main body 321, and further includes a triggering portion 322 and a hooking portion 323 respectively fixed at two ends of the main body 321, the main body 321 is hinged to the main striking member 331, the triggering portion 322 is integrally bent relative to the main body 321 to form an included angle and extends into the crystal-cutting inlet 333, and the hooking portion 323 is integrally bent relative to the main body 321 to form an included angle and extends toward the controlled member 31 and the auxiliary striking member 332 for hooking the controlled member 31.
Correspondingly, the controlled member 31 includes a fixing portion 311 fixedly mounted on the secondary striking member 332, and further includes a side warping portion 312 integrally bent with respect to the fixing portion 311 to form an included angle, the side warping portion 312 is adapted to the hooking portion 323, and the two portions can form a butting fit with a unique relative position posture. Optionally, when the lateral tilting portion 312 and the hooking portion 323 are in abutting engagement, the two abut against each other in a line contact or surface contact manner, so as to ensure that the controlled member 31 and the trigger member are maintained relatively fixed in the ready state of the cutting assembly 33.
When the pressure of the seed crystal 410 acting on the trigger 322 is increased enough to overcome the maximum static friction between the hook 323 and the lateral warping part 312, the trigger rotates relative to the main striking part 331, so that the hook 323 releases the limit of the lateral warping part 312. The basculating part 312 is thus released and the controlled member 31 is disengaged from the trigger member to allow the elastic energy accumulating member 35 to be elastically restored and deformed. After the cutting of the seed crystal 410 is completed, in order to prepare the cutting unit 30 for cutting a new seed crystal 410, the auxiliary striking member 332 needs to be driven again and rotate relative to the main striking member 331, the elastic energy storage member 35 is compressed and deformed again, and at the same time, the trigger is driven to move relative to the main striking member 331 until the hooking portion 323 hooks again and abuts against the lateral warping portion 312.
Further, the main striking member 331 includes a main striking portion 3311 and a first pivot portion 3312 fixedly connected to each other, the auxiliary striking member 332 includes an auxiliary striking portion 3321 and a second pivot portion 3322 fixedly connected to each other, the main striking portion 3311 and the auxiliary striking portion 3321 are disposed opposite to each other, the first pivot portion 3312 is convexly disposed on a side of the main striking portion 3311 close to the auxiliary striking portion 3321, and the second pivot portion 3322 is convexly disposed on a side of the auxiliary striking portion 3321 close to the main striking portion 3311. The shearing module 33 further includes a center pivot 34 passing through both the first pivot portion 3312 and the second pivot portion 3322, and the main striking member 331 and the auxiliary striking member 332 can rotate around the axis of the center pivot 34.
Alternatively, the elastic energy storage member 35 may be a helical extension spring, or may be a torsion spring.
A crystal-cutting inlet 333 is formed between the main impact part 3311 and the auxiliary impact part 3321, and the crystal-cutting inlet 333 and the elastic energy storage member 35 are respectively located at two sides of the first pivot part 3312 and the second pivot part 3322. When the shearing assembly 33 is in the ready state, the main striking member 331 and the auxiliary striking member 332 together form an H-shaped or a regular a-shaped frame, at this time, the opening degree of the crystal-cutting discharge inlet 333 reaches the maximum, and the elastic energy storage member 35 located on the side of the first pivot portion 3312 and the second pivot portion 3322 away from the crystal-cutting discharge inlet 333 is in a compressed state; when the shearing assembly 33 is in the shearing mode, the main striking member 331 and the auxiliary striking member 332 form an inverted a-shape together, the opening degree of the crystal-cutting crystal-placing inlet 333 is minimum or completely closed, and the elastic potential energy accumulated by the elastic energy accumulating member 35 after elastic resetting deformation is at the minimum level.
Optionally, the hooking part 323 of the trigger is located at a side of the first pivot part 3312 and the second pivot part 3322 away from the die-cutting inlet 333, the lateral warping part 312 of the controlled member 31 is located at a side of the first pivot part 3312 and the second pivot part 3322 away from the die-cutting inlet 333, when the cutting assembly 33 is in the preparation state, the hooking part 323 and the lateral warping part 312 hook and abut and cooperate at a side of the first pivot part 3312 and the second pivot part 3322 away from the die-cutting inlet 333, a pivot center, specifically a pivot axis, is formed between the first pivot part 3312 and the second pivot part 3322, and the pivot axis is located between the die-cutting inlet 333 and the elastic energy storage member 35.
It should be noted that the shapes of the hooking portion 323 and the lateral warping portion 312 and the bending angles between the hooking portion 323 and the lateral warping portion 312 and the main body 321 or the fixing portion 311 are not particularly limited in the present invention, as long as the hooking portion and the lateral warping portion can generate a static friction force capable of limiting the elastic return of the elastic energy storage member 35 in a hooked state, so as to maintain the two portions in a relatively fixed abutting engagement.
Optionally, an included angle formed between the hooking portion 323 and the main body portion 321 may be an acute angle, and an included angle of the lateral warping portion 312 bent relative to the fixing portion 311 may also be an acute angle, when the lateral warping portion 312 is hooked with the hooking portion 323, the main body portion 321, the hooking portion 323, the lateral warping portion 312 and the fixing portion 311 form a Z-shaped structure, which can improve the capability of the triggering portion 322 to resist external vibration interference, and avoid the accidental release of the controlled portion caused by slight vibration of the cut-off unit 30 or the connection unit 20, and meanwhile, under the cooperation of the Z-shaped structure, the elastic resetting deformation trend of the elastic energy storage member 35 can further increase the pressure between the hooking portion 323 and the lateral warping portion 312, so as to improve the maximum static friction force between the two, thereby obtaining a better self-locking effect.
Optionally, the position where the trigger and the main impact member 331 are hinged is located at one end of the main body 321 close to the trigger portion 322, so that the distance from the hooking portion 323 to the hinge point can be further increased, and thus, when the seed crystal 410 applies pressure to the trigger portion 322, the hooking portion 323 can generate a relatively large displacement around the hinge point, so that the lateral warping portion 312 can be released more quickly, and the corresponding amplitude of the action of the trigger portion 322 on the pressure application of the seed crystal 410 is increased.
It is understood that in other embodiments, the main striking member 331 and the secondary striking member 332 may be movably connected by other means, not limited to a hinge; the triggering part and the main striking part 331 can be movably connected by other ways, not only hinged; the connection positions of the triggering member and the controlled member 31 can be interchanged, for example, the triggering member can be movably connected to the secondary striking member 332, and the controlled member 31 can be connected to the primary striking member 331.
In some embodiments, crystal severing apparatus 100 further includes an advancement drive 37, wherein advancement drive 37 is coupled to severing unit 30 and is capable of advancing at least the trigger relatively closer to seed crystal 410 to hold the trigger against seed crystal 410. Therefore, after the growth and development of the seed crystal 410 are completed, if the seed crystal 410 needs to be cut, a person can operate the pushing driving piece 37 by controlling, so that the seed crystal 410 exerts pushing force on the trigger until the force of the seed crystal 410 acting on the trigger can overcome the relative abutting restraining force of the controlled piece 31 acting on the trigger.
Specifically, referring to fig. 3-4, the pushing driving member 37 may be a linear cylinder or a linear electric cylinder 12, the cylinder body of the pushing driving member 37 is fixedly mounted on the carrier 36, and the pushing rod of the pushing driving member 37 is used as its displacement output end to be drivingly connected to the main striking member 331 for driving the entire cutting assembly 33 to move along a linear trajectory toward or away from the seed crystal 410. When the driving pusher 37 is activated, the main striking member 331 and the sub striking member 332 can be brought together as a unit close to the seed crystal 410, and the trigger follows the shearing module 33 close to the seed crystal 410.
The driving operation of the advancement drive 37 is performed with the opening of the seed crystal dispensing opening 333 already aligned with the seed crystal 410, and the seed crystal 410 may be brought into the dispensing opening 333 in direct relative proximity to the shearing assembly 33. After the seed crystal 410 is sheared, the push rod is retracted by the push driving piece 37, so that the shearing assembly 33 is driven to be far away from the seed crystal 410. Optionally, the driving and pushing member 37 drives the cutting assembly 33 and the trigger member to move linearly in the horizontal direction, and the pushing and retracting directions are perpendicular to the seed crystal 410.
In some embodiments, the crystal cutting device 100 further includes a reset driving member, which is connected to the cutting unit 30 and at least can drive the triggering member to move, so as to drive the triggering member to form a limit fit with the controlled member 31, so as to switch the configuration of the cutting assembly 33 to the preparation configuration again. Therefore, after the seed crystal 410 is cut, the cutting assembly 33 can increase the opening degree of the crystal cutting discharging inlet 333 or reopen the crystal cutting discharging inlet 333 under the driving of the reset driving piece, so that the cutting unit 30 is ready for cutting a new seed crystal 410, personnel do not need to manually participate in resetting the form of the cutting assembly 33, and the use convenience of the crystal cutting device 100 is greatly improved.
Specifically, the reset driving member is directly driven and connected to the triggering member, and can drive the triggering member to rotate relative to the main striking member 331, and hook the lateral tilting portion 312 of the controlled member 31 through the hooking portion 323. Since the controlled part and the auxiliary striking part 3321 are connected as a whole and can move as a whole, the auxiliary striking part 3321 will eventually follow the controlled part and re-compress the elastic energy storage member 35 until the relative position between the auxiliary striking part 3321 and the main striking part 3311 and the opening of the crystal-switching inlet 333 are re-switched to the corresponding relative position and opening when the pre-configuration is performed.
Optionally, the reset driving member may be a rotating motor, and the rotating motor may be mounted on the carrier 36, or may be mounted at the end of the transmission shaft 21 in the furnace body 220.
The present invention also provides a crystal growing apparatus having a crystal cutting device 100, in some embodiments, the mounting body 10 is fixedly disposed outside the crystal growing furnace 200, the connection unit 20 is inserted into the furnace cover 210 and extends into the crystal growing furnace 200, and the cutting unit 30 is mounted on the portion of the connection unit 20 extending into the crystal growing furnace 200.
The invention also provides a crystal truncation method based on the crystal truncation device 100 of each embodiment, which comprises the following steps:
s10, adjusting the height of the cutting unit 30 in the crystal growth furnace 200 to enable the shearing assembly 33 to reach a preset crystal cutting height;
s20, controlling the propelling driving piece 37 to propel the trigger piece to move so that the trigger piece contacts the crystal;
s30, the crystal drives the trigger to release the controlled piece 31, and the shearing assembly 33 is switched to a shearing form to shear the crystal;
s40, opening the crystal growing furnace 200, and taking out the crystal rod 420 and the seed crystal 410.
Step S10 can be implemented by the lifting driving unit 11 providing power, and the lifting driving unit 11 cooperating with the electric cylinder 12 to drive the transmission shaft 21 to move up and down, and the present invention does not only limit the position of the preset wafer cutting height, as long as the cutting unit 30 is at the preset wafer cutting height, the height position of the shearing assembly 33 is just within the height range of the seed crystal 410.
In the case that the shearing module 33 maintains the preset wafer-cutting height position, step S20 is executed. The advanceable drive 37 advances the trigger into contact with the lens, thereby providing for the lens to apply pressure to the trigger to move the trigger. When the pushing drive member 37 drives the connecting shearing module 33, for example, directly drives the connecting main striking member 331, and the trigger member is movably connected to the main striking member 331, not only the trigger member can move close to the seed crystal 410 together with the shearing module 33, but also the seed crystal 410 can be driven into the crystal-cutting inlet 333.
Step S30, when the pressure of the seed crystal 410 acting on the trigger is increased to overcome the limit stop restraining force of the trigger on the controlled member 31, the trigger moves relative to the controlled member 31, and the hook between the trigger and the controlled member is released, so that the controlled member 31 can be separated from the trigger and drive the secondary striking member 332 integrally connected with the controlled member 31 to move relative to the primary striking member 331.
When the seed crystal 410 is cut off, the seed crystal 410 is lifted up by the upper spindle 300 and the lid 210 is lifted up, and then the opening of the lid 210 by a person is completed at step S40.
Optionally, the crystal truncation method further comprises the following steps:
and S50, driving the trigger piece to form limit fit with the controlled piece 31 so as to switch the form of the shearing assembly 33 into a preparation form.
Step S50 is performed after the seed crystal 410 has been sheared, whereby the shearing assembly 33 is able to return from the sheared configuration to the prepared configuration in preparation for shearing a new seed crystal 410. Specifically, step S50 includes:
and S51, driving the trigger to hook the controlled element 31, so that the trigger is hooked and fixedly abutted against the controlled element 31.
As mentioned above, the triggering member and the controlled member 31 are matched, and they form a fixed abutting fit in a unique and determined relative position relationship, that is, when the triggering member again limits and stops the controlled member 31, the relative position of the triggering member and the controlled member is only unique, so that the triggering member and the secondary striking member 332 can be kept relatively fixed. Under the action of the elastic energy storage member 35, the main striking member 331 and the auxiliary striking member 332 can be kept relatively fixed, and the force of the elastic energy storage member 35 acting on the main striking member 331 and the auxiliary striking member 332 respectively can further improve the pressure and the friction force between the triggering member and the controlled member 31, so as to further strengthen the relative position between the triggering member and the controlled member 31. This ensures that the shear assembly 33 is dimensionally stable in the ready configuration.
The features of the above-described embodiments may be arbitrarily combined, and for the sake of brevity, all possible combinations of the features in the above-described embodiments are not described, but should be construed as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the features.
It should be understood by those skilled in the art that the above embodiments are only for illustrating the present invention and are not to be used as a limitation of the present invention, and that suitable changes and modifications of the above embodiments are within the scope of the claimed invention as long as they are within the spirit and scope of the present invention.

Claims (10)

1. The crystal cutting device is characterized by comprising a cutting unit (30) which can be movably arranged in a crystal growth furnace (200), wherein the cutting unit (30) comprises a controlled piece (31), a trigger piece (32) and a shearing assembly (33) with a preparation form and a shearing form;
the shearing assembly (33) comprises a main impact piece (331) and an auxiliary impact piece (332) which are movably connected;
the controlled member (31) is connected with the shearing assembly (33) and can change the posture of the controlled member relative to the trigger member (32) to switch the shape of the shearing assembly (33), and the trigger member (32) is used for contacting a crystal;
the trigger piece (32) limits and stops the controlled piece (31) to limit the shearing assembly (33) to maintain a preparation state, and the trigger piece (32) releases the controlled piece (31) when being pressed by a crystal to enable the shearing assembly (33) to be switched to a shearing state.
2. Crystal truncation device according to claim 1, wherein the truncation unit (30) further comprises an elastic energy-accumulating member (35) connecting the primary (331) and secondary (332) strikers;
when the shearing assembly (33) is in a preparation state, the elastic energy storage piece (35) is pressed to deform, a crystal is allowed to be arranged between the main impact piece (331) and the auxiliary impact piece (332), and the elastic energy storage piece (35) deforms and resets when the controlled piece (31) is separated from the trigger piece (32), and drives the main impact piece (331) and the auxiliary impact piece (332) to relatively approach.
3. The crystal truncating device of claim 2, wherein the main striker (331) is hinged to the auxiliary striker (332), the trigger (32) is movably mounted to one of the main striker (331) and the auxiliary striker (332), and the controlled member (31) is fixedly mounted to the other of the main striker (331) and the auxiliary striker (332);
when the shearing assembly (33) is in a preparation state, the triggering piece (32) is hooked with the controlled piece (31), the elastic energy storage piece (35) drives the triggering piece (32) to be abutted and matched with the controlled piece (31), and the triggering piece (32) is movably supported by the main impact piece (331) or the auxiliary impact piece (332) to break away from and release the controlled piece (31) when being pressed by the crystal.
4. The crystal truncation device according to claim 3, wherein a crystal-cutting and placing inlet (333) is formed between the main impactor (331) and the secondary impactor (332), the trigger (32) is hinged to the main impactor (331) at the middle part, and the controlled part (31) is fixedly arranged on the secondary impactor (332); two ends of the trigger piece (32) are respectively provided with a trigger part (322) and a hooking part (323), the trigger part (322) extends to the crystal cutting and placing inlet (333), and the hooking part (323) extends to the auxiliary impact piece (332).
5. The crystal truncating device of claim 3, wherein the main striker (331) and the auxiliary striker (332) are oppositely arranged and respectively provided with a first pivot part (3312) and a second pivot part (3322) which are protruded towards each other, and the main striker (331) and the auxiliary striker (332) are hinged with the second pivot part (3322) through the first pivot part (3312);
a crystal cutting and placing inlet (333) is formed between the main impact piece (331) and the auxiliary impact piece (332), two ends of the elastic energy storage piece (35) are respectively connected with the main impact piece (331) and the auxiliary impact piece (332), a pivot center is formed between the first pivot part (3312) and the second pivot part (3322), and the pivot center is located between the crystal cutting and placing inlet (333) and the elastic energy storage piece (35).
6. Crystal truncating device according to claim 1, further comprising an advancement drive (37), said advancement drive (37) being connected to said truncating unit (30) and being capable of advancing at least said trigger (32) in said crystal growth furnace (200) close to the crystal to press against said crystal.
7. The crystal cut-off device according to claim 1, further comprising a reset driving member, wherein the reset driving member is connected to the cut-off unit (30) and at least can drive the trigger member (32) to move and drive the trigger member (32) to form a limit fit with the controlled member (31) so as to switch the form of the shearing assembly (33) to the preparation form.
8. The crystal truncating device of claim 7, wherein the trigger member (32) is movably mounted to the primary striker member (331), the controlled member (31) is connected to the secondary striker member (332) in a following manner and is capable of joint movement, and the reset driving member is connected to the trigger member (32) in a driving manner;
the reset driving piece can drive the trigger piece (32) to hook the controlled piece (31), and drive the trigger piece (32) to be abutted against and matched with the controlled piece (31) when the auxiliary impact piece (332) is reset to the position corresponding to the preparation shape.
9. Crystal growth apparatus, characterized in that it comprises a crystal growth furnace (200) and a crystal truncation device according to any one of claims 1 to 8, said truncation unit (30) being movably disposed within said crystal growth furnace (200).
10. A crystal truncation method based on the crystal growth apparatus of claim 9, comprising:
adjusting the height of the cutting unit (30) in the crystal growth furnace (200) so as to enable the shearing assembly (33) to reach a preset crystal cutting height;
controlling a propelling and driving piece (37) to propel a trigger piece (32) to move so that the trigger piece (32) contacts the crystal;
the crystal drives the trigger piece (32) to release the controlled piece (31), so that the shearing assembly (33) is switched to a shearing form and shears the crystal;
and opening the crystal growing furnace (200), and taking out the crystal bar (420) and the seed crystal (410).
CN202211442615.0A 2022-11-18 2022-11-18 Crystal cut-off device, crystal growth equipment and crystal cut-off method Active CN115570689B (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4244348A (en) * 1979-09-10 1981-01-13 Atlantic Richfield Company Process for cleaving crystalline materials
US4343287A (en) * 1980-08-29 1982-08-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Crystal cleaving machine
US4653680A (en) * 1985-04-25 1987-03-31 Regan Barrie F Apparatus for breaking semiconductor wafers and the like
JP2012193080A (en) * 2011-03-17 2012-10-11 Seiko Epson Corp Break method and break apparatus
CN105648530A (en) * 2016-04-19 2016-06-08 黄山市东晶光电科技有限公司 Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line
CN113001793A (en) * 2021-03-12 2021-06-22 山东天岳先进科技股份有限公司 Crystal processing device and method
CN114753005A (en) * 2022-04-13 2022-07-15 包头美科硅能源有限公司 Automatic seed crystal shearing device of single crystal furnace
CN115091635A (en) * 2022-04-13 2022-09-23 大连连城数控机器股份有限公司 Machine tool with cutting and outer circle machining functions and machine tool machining method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10213940B2 (en) * 2014-09-30 2019-02-26 Ib Labs, Inc. Device and method for cleaving a crystalline sample

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4244348A (en) * 1979-09-10 1981-01-13 Atlantic Richfield Company Process for cleaving crystalline materials
US4343287A (en) * 1980-08-29 1982-08-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Crystal cleaving machine
US4653680A (en) * 1985-04-25 1987-03-31 Regan Barrie F Apparatus for breaking semiconductor wafers and the like
JP2012193080A (en) * 2011-03-17 2012-10-11 Seiko Epson Corp Break method and break apparatus
CN105648530A (en) * 2016-04-19 2016-06-08 黄山市东晶光电科技有限公司 Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line
CN113001793A (en) * 2021-03-12 2021-06-22 山东天岳先进科技股份有限公司 Crystal processing device and method
CN114753005A (en) * 2022-04-13 2022-07-15 包头美科硅能源有限公司 Automatic seed crystal shearing device of single crystal furnace
CN115091635A (en) * 2022-04-13 2022-09-23 大连连城数控机器股份有限公司 Machine tool with cutting and outer circle machining functions and machine tool machining method

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