CN115635606B

CN115635606B - Crystal cut-off device, crystal growth equipment and crystal cut-off method

Info

Publication number: CN115635606B
Application number: CN202211442613.1A
Authority: CN
Inventors: 曹建伟; 朱亮; 张俊; 傅林坚; 石刚; 欧阳鹏根; 叶钢飞; 魏怡凡
Original assignee: Zhejiang Jingsheng Mechanical and Electrical Co Ltd
Current assignee: Zhejiang Jingsheng Mechanical and Electrical Co Ltd
Priority date: 2022-11-18
Filing date: 2022-11-18
Publication date: 2023-03-10
Anticipated expiration: 2042-11-18
Also published as: CN115635606A

Abstract

The invention provides a crystal truncation device, crystal growth equipment and a crystal truncation method. The crystal cutting device comprises a connecting unit at least partially arranged in the crystal growth furnace and a cutting unit arranged on the connecting unit, wherein the cutting unit is arranged on the part of the connecting unit positioned in the crystal growth furnace; cut the unit and include mobilizable disconnected wafer spare, the crystal cuts the device and still includes the power pack who connects disconnected wafer spare, and power pack can drive disconnected wafer spare activity friction crystal to the position fracture that makes the crystal contact disconnected wafer spare.

Description

Crystal cutting device, crystal growth equipment and crystal cutting method

Technical Field

The invention relates to the technical field of crystal preparation, in particular to a crystal truncation device, crystal growth equipment and a crystal truncation method.

Background

In the photovoltaic industry and the semiconductor industry, artificial crystals are commonly used raw materials, for example, sapphire substrates prepared by the kyropoulos method or various modified kyropoulos methods are widely used in current LED substrates, and the preparation of desired crystals by the kyropoulos method includes a step of cutting off a seed crystal and an ingot. At present generally with the manual operation mode with the help of cutting brilliant instrument and cutting off the seed crystal, there are potential safety hazard and the inconvenient problem of operation in this kind of brilliant mode of cutting, need open the bell when cutting brilliant, operating personnel need stretch into the stove with the arm and go on, receive the interior waste heat of stove easily and roast the injury, the bell is opened inconveniently, influences the operating efficiency, and cuts brilliant instrument and have the possibility that drops carelessly.

Disclosure of Invention

In view of this, the invention provides a crystal cutting device, which can automatically cut seed crystals without opening a furnace cover, and does not need personnel to manually cut the crystals by using a crystal cutting tool.

The invention provides a crystal cut-off device, which comprises a connecting unit at least partially arranged in a crystal growth furnace, a cut-off unit arranged on the connecting unit, wherein the cut-off unit is arranged on the part of the connecting unit positioned in the crystal growth furnace, the cut-off unit comprises a movable broken wafer element, the crystal cut-off device also comprises a power unit connected with the broken wafer element, and the power unit can drive the broken wafer element to movably rub the crystal so as to break the part of the crystal contacting the broken wafer element.

In one embodiment, the crystal cutting device further comprises a mounting main body fixedly arranged outside the crystal growth furnace, and the connecting unit is connected to the mounting main body and penetrates through a furnace cover of the crystal growth furnace to extend into the crystal growth furnace.

In one embodiment, the cutting element comprises a cutting line, the cutting unit further comprises a movable stringing assembly, the cutting line is connected to the stringing assembly in a tensioning mode and forms a tightening section, and the power unit is connected with the stringing assembly in a driving mode and can drive the stringing assembly to move so that the tightening section can move to rub the crystal.

So set up, the pressure between the tight section that the cutting wire formed and the crystal can maintain at great level and comparatively stable state, is favorable to the quick fracture of crystal.

In one embodiment, the stringing assembly includes a first wheel and a second wheel arranged in parallel in the axial direction, the cutting line is in a closed loop structure and is sleeved on the first wheel and the second wheel, and the power unit is connected to the first wheel or the second wheel in a driving manner.

So set up, the line of cut drives through a set of wheel body and carries out the motion of circling back, has reduced to make its section motion friction crystal that tightens required space occupy, is favorable to realizing the compactification and the lightweight of cutting the unit, is more convenient for arrange in the crystal growth stove and cuts unit and linkage unit.

In one embodiment, the cutting unit further comprises a carrier arranged on the connecting unit and extending into the crystal growth furnace, and the first wheel body and the second wheel body are arranged on one side of the carrier; wherein:

the carrier is provided with a crystal avoiding groove, the cutting line is tangent to straight line sections of the first wheel body and the second wheel body to form a tightening section, and the projection of the tightening section is positioned in the notch projection of the crystal avoiding groove in a plane perpendicular to the axial direction of the first wheel body; and/or the presence of a catalyst in the reaction mixture,

the cutting unit further comprises a tensioning adjusting assembly, one of the first wheel body or the second wheel body is movably mounted on the carrier and connected with the tensioning adjusting assembly, and the tensioning adjusting assembly can increase the axle center distance between the first wheel body and the second wheel body so as to tension the cutting line.

Due to the arrangement, the crystal avoidance groove can avoid collision interference between the crystal and the carrier, and the tight section can be ensured to cut off the crystal smoothly and as soon as possible; the tensioning adjusting component is arranged to enable the cutting line to be in a tensioning state, and sufficient pressure can be generated between the tensioning section and the crystal, so that the friction force of the cutting line on the crystal is ensured, and the cutting efficiency of the crystal is improved.

In one embodiment, the connecting unit comprises a transmission component which extends into the crystal growing furnace and can rotate, the power unit is in driving connection with the transmission component, and the cutting unit is arranged on the transmission component and can rotate along with the transmission component to be close to or far away from the crystal; the truncation unit further comprises a driven assembly, the driven assembly is in force transmission connection with the transmission assembly and can move in a correlation mode, and the disconnection element is in force transmission connection or follow-up connection with the driven assembly.

So set up, the power unit input can play the dual function to transmission assembly's power: 1) Driving the cut-off unit to be close to or far away from the crystal so as to enable the cut-off element to be in contact with or separate from the crystal; 2) Part of the power is transmitted to the driven component, so that the wafer breaking component is driven to move to rub the crystal, and cutting is completed. Therefore, the embodiment can reduce the number of power devices in the crystal cutting device and reduce the cost of the crystal cutting device.

In one of them embodiment, drive assembly includes transmission shaft and the action wheel that circumference is fixed, and the transmission shaft is rotatable around self axis to be set up to connect power unit, cut off the unit and include the carrier that relative transmission shaft circumference is fixed, driven assembly includes the rotatable follow-up wheel of following of relative carrier, and the action wheel is connected in the meshing of driven teeth of a cogwheel to be connected with disconnected wafer tooth meshing or follow-up connection.

So set up, cooperation precision between transmission assembly and the driven assembly to and disconnected wafer spare is higher with the motion degree of being correlated with between the driven assembly, and power is higher to the efficiency of driven assembly transmission by transmission assembly, and disconnected wafer spare is quick to the corresponding sensitivity more of transmission assembly's power input, is showing and is improving and cut brilliant efficiency.

In one embodiment, the connecting unit comprises a transmission shaft penetrating through a furnace cover of the crystal growth furnace, the cutting unit is arranged on the transmission shaft, and the power unit is connected with the transmission shaft and can drive the cutting unit to rotate along with the transmission shaft to be close to or far away from the crystal; the connecting unit also comprises a rotary sealing sleeve sleeved with the transmission shaft, and the transmission shaft is in rotary sealing fit with the furnace cover through the rotary sealing sleeve.

So set up, the connecting element wears to establish the bell can not lead to the fact the influence to the sealed isolation of inside and outside of crystal growth stove, and the sealed isolated effect of rotation seal between transmission shaft and the bell is better, can adapt to well and cut the needs that the unit adjusted at crystal growth stove appearance.

In one embodiment, the rotary sealing sleeve is fixedly arranged on the furnace cover and can be sleeved with the transmission shaft in a sliding manner along the axial direction of the transmission shaft, and the mounting main body comprises a lifting driving unit which is in driving connection with the transmission shaft and used for driving the cutting unit to move up and down along with the transmission shaft.

So set up, the gyration seal cover can not break away from the bell along with the transmission shaft slides, can adapt to well and cut the unit and in the needs of crystal growth stove elevating movement, the sealed cooperation between transmission shaft and the bell is not influenced in the relative translation slip of axial between transmission shaft and the gyration seal cover.

In one embodiment, the mounting body comprises a lifting driving unit, the connecting unit is mounted at the displacement output end of the lifting driving unit, and the lifting driving unit is used for driving the connecting unit to move along a preset track so as to enable the cutting unit to move to a preset crystal cutting height or leave a furnace felt in the crystal growth furnace.

So set up, cut the unit and can be driven to preset and cut the brilliant height thereby prepare for cutting the brilliant according to actual need, perhaps be driven and leave preset and cut brilliant height and leave the stove felt to keep away from broil of crystal growth stove internal waste heat, prevent to cut the unit damage.

In one embodiment, the connection unit penetrates through a furnace cover of the crystal growth furnace, and the lifting drive unit can drive the connection unit to move to a lifting limit position so that the cutting unit reaches one side of the inner wall of the furnace cover.

So set up, cut off the unit and move safer when rising extreme position at the linkage unit, the high temperature that it received this moment toasts the degree weakest.

In one embodiment, the mounting body is fixedly arranged on the outer wall of the furnace cover; and/or the crystal cut-off device is also provided with a cooling liquid path capable of receiving and storing a cooling medium, and the cavity wall of the cooling liquid path is in heat conduction connection with the furnace cover; and/or the inner wall of the furnace cover is provided with a holding chamber which is sunken towards the outer wall of the furnace cover, and when the connecting unit moves to the ascending limit position, the cutting-off unit is positioned in the holding chamber.

By the arrangement, the cooling liquid path can achieve the effects of cooling the furnace cover and the cut-off unit, the service life of the cut-off unit is prolonged, the reliability of the cut-off unit is improved, and the cut-off unit is arranged in the holding chamber to further break away from waste heat roasting in the crystal growth furnace.

The invention also provides crystal growth equipment which comprises a crystal growth furnace and the crystal cutting device, wherein at least part of the connecting unit is arranged in the crystal growth furnace, and the cutting unit is arranged at the part of the connecting unit, which is positioned in the crystal growth furnace.

The invention also provides a crystal truncation method, which comprises the following steps:

s10, adjusting the height position of the truncation unit in the crystal growth furnace to enable the truncation unit to reach a preset crystal cutting height;

s20, maintaining the preset crystal cutting height of the cutting unit, and adjusting the pose of the cutting unit to enable the crystal cutting element to contact the seed crystal;

s30, driving the seed crystal breaking element to move by using the power unit, so that the seed crystal is broken by the seed crystal breaking element through friction;

and S40, opening the crystal growing furnace, and taking out the seed crystal and the crystal rod.

Compared with the prior art, the crystal truncation device, the crystal growth equipment and the crystal truncation method provided by the invention at least have the following beneficial effects: the seed crystal is automatically cut under the condition that the furnace cover is not opened, the time and the production rhythm for opening the furnace cover are saved, and the labor cost is saved; the labor load and the probability of injury of personnel during operation are reduced, the hidden danger that the crystal cutting tool falls into the crystal growth furnace is eliminated, the production efficiency is improved, and the crystal cutting process is safer; the crystal is cut by friction of the crystal breaking element, so that the crystal can be prevented from being impacted by a large external force, and the overlarge shape and size precision error after the seed crystal is cut off is avoided; the required power load is lower during cutting, and the problem that the truncation unit is damaged or short in service life due to large external force and repeated cutting operation is solved, so that the frequency of maintaining and replacing the truncation unit is reduced.

Drawings

FIG. 1 is a schematic view of a crystal growing apparatus according to an embodiment of the present invention;

FIG. 2 isbase:Sub>A schematic view of the crystal growing apparatus of FIG. 1 taken along plane A-A;

FIG. 3 is a schematic view of a crystal truncating apparatus, according to one embodiment of the present invention;

FIG. 4 is an enlarged partial view of the crystal truncating apparatus of FIG. 3 at S;

fig. 5 is a cross-sectional view of a crystal intercepting apparatus in the crystal growing apparatus of fig. 3.

Description of reference numerals:

100. a crystal cut-off device; 200. a crystal growth furnace; 210. a furnace cover; 220. a furnace body; 230. furnace felts; 240. a crucible; 300. an upper shaft lever; 410. seed crystal; 420. crystal bar; 10. mounting the main body; 11. a lifting drive unit; 12. an electric cylinder; 13. a lifting frame; 20. a connection unit; 21. a drive shaft; 22. a rotary sealing sleeve; 231. a copper sleeve; 232. pressing a sleeve; 30. a truncation unit; 31. breaking the die; 311. cutting a line; 3111. a tightening section; 32. a stringing assembly; 321. a first wheel body; 322. a second wheel body; 323. a first shaft body; 324. a second shaft body; 33. a carrier; 331. a crystal avoiding groove; 34. a tension adjustment assembly; 341. an adjustment element; 342. a slide plate; 343. a base body; 40. a power unit; 41. a worm gear motor; 42. a first coupling; 43. a rotating cylinder; 44. a second coupling; 45. a shaft sleeve.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments of the present invention, belong to the protection scope of the present invention.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "or/and" includes any and all combinations of one or more of the associated listed items.

The invention provides a crystal cutting device 100, and also provides crystal growth equipment using the crystal cutting device 100 and a crystal cutting method based on the crystal cutting device 100. The crystal growth equipment is an industrial facility for growing crystals by using a kyropoulos method or a modified kyropoulos method, and can be used for preparing sapphire crystals, and the obtained sapphire crystal product can be used in the photovoltaic industry or the semiconductor industry, such as LED display substrates. Other types of crystals can of course also be prepared.

Referring to fig. 1-2, the crystal growth apparatus provided by the present invention includes a crystal growth furnace 200, a crucible 240 disposed in the crystal growth furnace 200, a furnace felt 230, and a crystal cutting device 100 provided by the present invention. The crystal growth furnace 200 includes a hollow furnace body 220 having an opening at the end thereof, and a furnace cover 210 covering the end of the furnace body 220 to close the opening of the furnace body 220, a crucible 240 disposed at the bottom of the furnace body 220 and having an opening of the crucible 240 facing the furnace cover 210, a furnace felt 230 surrounding the crucible 240, and a hollow region surrounded and formed in the furnace body 220.

Further, the crystal growth apparatus further comprises an upper shaft rod 300, a part of the upper shaft rod 300 penetrates through the furnace cover 210 and extends into the furnace body 220, the part of the upper shaft rod 300 extending into the furnace body 220 is used for developing crystals and enabling the crystals to form seed crystals 410, finally, after the seed crystals 410 are formed, the seed crystals 410 are in a columnar structure, one end of the seed crystals 410 is connected with the tail end of the upper shaft rod 300 extending into the furnace body 220, the other end of the seed crystals is connected with a crystal rod 420, and the crystal rod 420 is located in the crucible 240. In addition, the upper shaft 300 may also pull the seed crystal 410 after the seed crystal 410 is cut off and stir the molten material in the crucible 240 during the development of the seed crystal 410.

The invention provides a crystal cutting device 100, which comprises an installation main body 10 arranged outside a crystal growth furnace 200, a connecting unit 20 connected with the installation main body 10 and extending into the crystal growth furnace 200 after penetrating through a furnace cover 210, a cutting unit 30 arranged on the connecting unit 20, and a power unit 40 used for providing power required by crystal cutting, wherein the cutting unit 30 is arranged on the part of the connecting unit 20 extending into the crystal growth furnace 200. The mounting body 10 is used for driving the connecting unit 20 to move up and down relative to the crystal growth furnace 200 so as to change the size of the connecting unit 20 extending into the furnace body 220; the connecting unit 20 drives the cutting unit 30 to move up and down in the furnace body 220 under the driving of the installation main body 10, drives the cutting unit 30 to reach a preset crystal cutting height before crystals are to be cut, and drives the cutting unit 30 to move away from the crucible 240 and the furnace felt 230 after the crystals are cut.

The process and principle of the crystal cutting apparatus 100 for cutting the crystal are as follows: the cutting unit 30 comprises a movable cutting element 31, the height of the cutting unit 30 in the crystal growth furnace 200 is adjusted by the installation main body 10 to be maintained at a preset crystal cutting height, and the cutting element 31 is contacted with the seed crystal 410 after the posture of the cutting unit 30 is adjusted, the power unit 40 is started, the power unit 40 outputs power to the cutting element 31 to drive the cutting element 31 to move relative to the crystal and rub the crystal repeatedly, and the specific friction part is the seed crystal 410 below the upper shaft rod 300. By repeatedly rubbing the seed crystal 410, the position where the seed crystal 410 contacts the broken wafer element 31 is continuously removed of material, and finally, breakage occurs.

Example one

Please refer to fig. 2-5. The mounting body 10 includes a lifting driving unit 11 for generating power required to lift the connection unit 20, and the connection unit 20 is mounted at a displacement output end of the lifting driving unit 11. The elevation driving unit 11 drives the connection unit 20 to move in a translational manner along a preset track perpendicular to the end surface of the furnace cover 210, and the preset track has an offset distance with the upper shaft rod 300, so that the connection unit 20 and the truncation unit 30 do not interfere with the upper shaft rod 300 during the elevation movement. Under the combined action of the lifting driving unit 11 and the connecting unit 20, the cutting unit 30 is driven to enter a hollow area surrounded by the furnace felt 230 until the cutting element 31 reaches a certain height position below the upper shaft 300 and within the height range of the seed crystal 410, and at this time, the height of the cutting unit 30 is the preset crystal cutting height; after the crystal is cut, the lifting driving unit 11 can drive the connecting unit 20 to move upwards, and the connecting unit 20 can lift the cutting unit 30 to move away from the crucible 240 and close to the furnace cover 210 to separate from the hollow area of the furnace felt 230 until the connecting unit 20 reaches the lifting limit position, and finally the cutting unit 30 reaches one side of the inner wall of the furnace cover 210.

Optionally, the upper shaft 300 is inserted through the center of the furnace cover 210, the axis of the upper shaft is coaxial with the crystal growth furnace 200, and the connection unit 20 is inserted through the furnace cover 210 with an offset distance from the center of the furnace cover 210.

Optionally, the installation body 10 further includes an electric cylinder 12 and a lifting frame 13, the lifting driving unit 11 is a motor operating in cooperation with the electric cylinder 12, and the motor is capable of outputting torque and converting the rotary motion generated by the electric cylinder 12 into a linear lifting motion of the power output end of the electric cylinder 12 relative to the furnace cover 210 by connecting the electric cylinder 12. The lifting frame 13 is fixedly arranged at the power output end of the electric cylinder 12 and is used for forming the displacement output end of the lifting driving unit 11. The electric cylinder 12 extends in a direction perpendicular to the inner and outer end surfaces of the furnace cover 210, one end of the electric cylinder is connected with the lifting driving unit 11, the other end of the electric cylinder is fixedly connected with the outer end surface of the furnace cover 210 departing from the crucible 240, and the lifting frame 13 can move close to or far away from the furnace cover 210 along a track perpendicular to the inner and outer end surfaces of the furnace cover 210.

It is understood that in other embodiments, the mounting body 10 is not necessarily fixed to the furnace cover 210, but may be fixedly connected to the furnace body 220, specifically, may be directly fixed to the furnace body 220, or may be mounted outside the crystal growth furnace 200, but at the same time, is fixed relative to the furnace body 220.

Referring to fig. 3 and 5 again, in some embodiments, the connection unit 20 includes a transmission shaft 21 penetrating through the furnace cover 210 in a direction perpendicular to the inner and outer end surfaces of the furnace cover 210 and extending into the crystal growth furnace 200, one end of the transmission shaft 21 is mounted to the lifting frame 13 and can linearly move up and down along with the movement of the lifting frame 13 relatively close to or away from the furnace cover 210, and the other end of the transmission shaft 21, specifically, the end extending into the furnace body 220, is fixedly connected to the cut-off unit 30, so that the cut-off unit 30 can synchronously move up and down along with the transmission shaft 21. The track of the transmission shaft 21 along with the linear lifting motion of the lifting frame 13 is the preset track of the connecting unit 20, and the transmission shaft 21 along with the linear lifting motion of the lifting frame 13 also carries out the lifting motion along the self axis.

Further, the power unit 40 further includes a rotary driving source, which may be a rotary cylinder 43 or a rotary electric cylinder, in the embodiment shown in fig. 3 and 5, the rotary driving source is the rotary cylinder 43 mounted on the lifting frame 13, and a power output end of the rotary cylinder 43 is connected to one end of the transmission shaft 21 located outside the crystal growth furnace 200 through a second coupling 44. The rotary cylinder 43 is used for driving the transmission shaft 21 to rotate around the axis of the transmission shaft, so that the cut-off unit 30 is driven to rotate along with the transmission shaft 21 to be close to or far away from the crystal, and finally the purpose of adjusting the pose of the cut-off unit 30 in the furnace body 220 is achieved.

Optionally, the connection unit 20 further includes a shaft sleeve 45 fixedly connected to the crane 13, the transmission shaft 21 passes through the shaft sleeve 45, the rotary cylinder 43 is fixedly mounted at one end of the shaft sleeve 45, and the second coupler 44 is disposed in the shaft sleeve 45.

The reasons for adjusting the posture of the cutoff unit 30 in the furnace body 220 include: since there is an offset distance between the preset track of the connecting unit 20 and the upper shaft 300, there is a possibility that there is an offset distance between the cutting unit 30 and the seed crystal 410, it is necessary to rotate the transmission shaft 21 around its own axis to drive the breaking element 31 on the cutting unit 30 to approach the seed crystal 410, and the cutting can not be started until the breaking element contacts the seed crystal 410. After the cutting is completed, in order to smoothly lift the cutting unit 30 to the inner end surface side of the furnace cover 210, the transmission shaft 21 needs to rotate around its own axis in the opposite direction to drive the cutting element 31 to leave the seed crystal 410.

Further, the connection unit 20 further includes a rotating sealing sleeve 22 disposed outside the transmission shaft 21, wherein the rotating sealing sleeve 22 can rotate relative to the transmission shaft 21 with the axis of the transmission shaft 21 as the center, and a sealing fit is formed between the rotating sealing sleeve 22 and the furnace cover 210. Thereby, the transmission shaft 21 and the furnace cover 210 are in rotating fit through the rotating sealing sleeve 22. With such an arrangement, the rotary sealing sleeve 22 can not only meet the requirement of rotation of the transmission shaft 21, but also participate in forming rotary sealing cooperation, which can greatly improve the effect of sealing the inside and the outside of the furnace cover 210.

In addition, as mentioned above, since the elevation driving unit 11 needs to drive the transmission shaft 21 to linearly move up and down along its axis, in the embodiment shown in fig. 3 and 5, the rotary sealing sleeve 22 is fixed to the furnace cover 210 and can slidably sleeve the transmission shaft 21 along the axis direction of the transmission shaft 21, and a sliding fit seal is formed between the transmission shaft 21 and the rotary sealing sleeve 22. Therefore, regardless of the height position of the cutoff unit 30 in the furnace body 220, the transmission shaft 21 and the rotary sealing sleeve 22 can be in sealing fit all the time, and even if the transmission shaft 21 moves linearly up and down relative to the furnace cover 210, the rotary sealing fit between the transmission shaft 21 and the rotary sealing sleeve 22 is not affected.

Optionally, the connection unit 20 further includes a copper sleeve 231 and a pressing sleeve 232 that are also sleeved on the transmission shaft 21, the copper sleeve 231 is fixedly mounted on the outer end surface of the furnace cover 210, and the pressing sleeve 232 and the copper sleeve 231 clamp and fix the rotary sealing sleeve 22 together. Sealing rings or sealing fillers are arranged between the copper sleeve 231 and the rotary sealing sleeve 22 and between the pressing sleeve 232 and the rotary sealing sleeve 22. Either the copper bush 231 or the press bush 232 can rotate relative to the drive shaft 21 about the axis of the drive shaft 21 and can slide relative to the drive shaft 21 along the axis of the drive shaft 21.

Please refer to fig. 3, fig. 4 and fig. 5 again. In some embodiments, the breaking element 31 comprises a cutting line 311, and the severing unit 30 further comprises a carriage 33 and a stringing assembly 32 movably mounted on the carriage 33. The carriage 33 is fixedly connected to one end of the transmission shaft 21 extending into the furnace body 220, and the cutting wire 311 is connected to the stringing assembly 32 in a tensioned state and forms a tensioned section 3111. The power unit 40 includes a cutting driving source mounted on the carriage 33, the cutting driving source drives the connection stringing assembly 32, and the stringing assembly 32 can be driven to move so as to enable the cutting wire 311 to move, and finally, the position of the seed crystal 410 contacting the tensioning section 3111 is continuously removed until the seed crystal is broken by utilizing the tensioning section 3111 formed by the cutting wire 311 to slide and repeatedly rub against the surface of the seed crystal 410.

Specifically, the cutting drive source includes a worm gear motor 41 fixedly mounted on one side of the carrier 33 near the inner end surface of the furnace cover 210, and the truncation unit 30 further includes a first shaft body 323 and a first shaft body 42, wherein the first shaft body 323 rotatably penetrates through the carrier 33 and is connected with the drive end of the worm gear motor 41 through the first shaft body 42. The stringing assembly 32 includes a first wheel 321 and a second wheel 322, the first wheel 321 is circumferentially and fixedly connected with a first shaft 323, the first wheel and the first shaft 323 can rotate synchronously with the axis of the first wheel 321 as a center, and the worm gear motor 41 drives the first shaft 323 to rotate through the first coupling 42, so as to drive the first wheel 321 to rotate. The axes of the second wheel body 322 and the first wheel body 321 are parallel to each other, the cutting line 311 is in a closed loop structure and is sleeved on the outer edge of the first wheel body 321 and the outer edge of the second wheel body 322, the cutting line 311 can be made of a diamond line, the cutting line 311 made of the diamond line has longer service life and strength, the consumed time for cutting the seed crystal 410 is shorter, and the cutting is more labor-saving.

When the worm gear motor 41 is started, the first wheel 321 is a driving wheel, the second wheel 322 is a driven wheel, and the driving wheel and the driven wheel cooperate to drive the cutting line 311 to move back and forth, and a tightening section 3111 is formed by the cutting line 311 tangent to the straight line section of the outer edge of the first wheel 321 and the outer edge of the second wheel 322. By the back-and-forth movement of the cutting line 311, the seed crystal 410 is rubbed by the cutting line 311 and continuously peeled off the material, and the outer diameter dimension of the position where the seed crystal 410 contacts the tightening section 3111 is gradually decreased until it is broken. When the elevation driving unit 11 drives the cutting unit 30 to reach the preset height, the first wheel 321, the second wheel 322, the cutting line 311 and the tightening segment 3111 are just in the height area corresponding to the seed crystal 410. Then, the transmission shaft 21 is driven to rotate by the rotary driving source, so that the cutting unit 30 rotates along with the transmission shaft 21 to change the posture until the tightening section 3111 contacts the seed crystal 410, after the seed crystal 410 is cut, the transmission shaft 21 is driven to rotate reversely by the rotary driving source to drive the tightening section 3111 to leave the seed crystal 410, and then the lifting driving unit 11 drives the cutting unit 30 to lift up and leave the furnace felt 230.

It will be appreciated that in other embodiments, the stringing assembly 32 need not be provided with two wheels, nor need the cutting line 311 be shaped in a closed loop configuration. For example, the cutting line 311 may also be a straightened line, in which case the stringing assembly 32 may be provided with two fixed seats fixed in relative position and distance and respectively fixedly connected to two ends of the cutting line 311, the portion of the cutting line 311 located between the two fixed seats forms the tightening section 3111, and the cutting driving source may be an electric cylinder 12 or a motor capable of generating linear displacement. The cutting driving source drives the stringing assembly 32 to reciprocate along a straight track, so as to drive the tightening section 3111 to slide along the surface of the seed crystal 410 in a reciprocating manner, and the material of the seed crystal 410 can be gradually removed and sawed off. Of course, the breaking element 31 may be replaced by a blade with a cutting edge or a saw blade as required.

Optionally, the truncating unit 30 further includes a tensioning adjusting assembly 34 and a second shaft 324, wherein the tensioning adjusting assembly 34 includes a sliding plate 342 slidably fitted with the carrier 33, a seat 343 fixedly disposed on the carrier 33, and an adjusting element 341 movably connected to the seat 343, the adjusting element 341 is connected to the sliding plate 342, and the second shaft 324 is mounted on the sliding plate 342 and used for carrying the second wheel 322 and can slide along with the sliding plate 342 relative to the carrier 33, so as to change a distance between an axis of the second wheel 322 and an axis of the first wheel 321. The second wheel 322 is rotatably mounted on the second shaft 324, and the position and posture of the adjusting element 341 relative to the seat 343 are manually adjusted to drive the sliding plate 342 to slide along the carriage 33 relatively away from the first shaft 323, so that the cutting line 311 is tensioned. Adjustment member 341 is preferably threadably mounted to body 343 and is in axially fixed rotational connection with slide plate 342. Of course, the adjusting element 341 may be connected to the first shaft 323 and the cutting drive source, and the axis of the second shaft 324 may be fixed to the carriage 33.

The first shaft 323, the second shaft 324, the first wheel 321, the second wheel 322, and the cutting line 311 are preferably disposed on a side of the carriage 33 facing away from the furnace cover 210 and toward the bottom of the crucible 240 and the crystal growth furnace 200. Optionally, the carrier 33 is provided with a crystal avoiding groove 331, and when the cutting unit 30 is viewed along the axial direction of the first wheel 321, a projection of the tightening section 3111 in a plane perpendicular to the axial direction of the first wheel 321 is at least partially located on a notch projection of the crystal avoiding groove 331. In this manner, when the rotary drive source drives the drive shaft 21 to rotate so that the cutting unit 30 approaches the seed crystal 410 to cause the cutting line 311 to approach and contact the seed crystal 410, the seed crystal 410 does not interfere with the carriage 33, sufficient pressure can be ensured to be applied to the seed crystal 410 by the cutting line 311, and the seed crystal 410 can be ensured to be cut off smoothly and thoroughly by the cutting line 311.

In some embodiments, the crystal growth apparatus further comprises a cooling fluid path capable of receiving and storing a cooling medium, wherein a wall of the cooling fluid path is thermally coupled to the furnace lid 210, and heat in the furnace lid 210 can be carried away by the cooling medium as the cooling medium flows through the portion of the cooling fluid path that is thermally coupled to the furnace lid 210, whereby the temperature of the furnace lid 210 can be rapidly reduced. Thus, after the seed crystal 410 is cut off, the elevation driving unit 11 may drive the connection unit 20 to ascend and lift the cutting unit 30 to the lower side of the inner end surface of the furnace cover 210, and at this time, the temperature of the furnace cover 210 and the surrounding is maintained at about 40 ℃, so that the cutting unit 30 is not easily broiled at a high temperature, the cooling medium continuously flows through the cooling liquid path, and the furnace cover 210 and even the cutting unit 30 may be further cooled down.

The cooling medium may be water, cooling oil or other fluid with heat absorbing capacity.

In some embodiments, the inner end surface of the furnace cover 210 is provided with a holding chamber recessed toward the outside of the furnace cover 210, and when the connection unit 20 is driven to the upper limit position by the elevation driving unit 11, the blocking unit 30 can be just accommodated in the holding chamber, and since the holding chamber is far away from the high temperature region inside the furnace body 220, the blocking unit 30 can be free from high temperature roasting in the holding chamber, and can be gradually cooled down.

Optionally, the cavity wall of the cooling liquid path may be in heat-conducting connection with the cavity wall of the containment chamber, or the cooling liquid path extends through the containment chamber, so that when the connection unit 20 is located at its ascending limit position, the cutting-off unit 30 has a better cooling effect and a faster temperature reduction.

In other embodiments, the mounting body 10 is not necessarily mounted outside the crystal growth furnace 200, and may be fixedly mounted on the inner end surface of the furnace cover 210, for example, and the connection unit 20 may be mounted in the crystal growth furnace 200 by driving the connection unit 20 to move up and down, so that the height of the cutoff unit 30 in the crystal growth furnace 200 may be changed by the up-and-down driving unit 11 of the mounting body 10. The reason why the installation body 10 is fixedly installed outside the crystal growth furnace 200 and the connection unit 20 is inserted into the furnace cover 210 is that this arrangement allows the connection unit 20 and the cutoff unit 30 to move up and down within a wider range of stroke.

Example two

The second embodiment is different from the first embodiment in that a cutting driving source, the stringing assembly 32, may be omitted, and the breaking element 31 may be replaced by a thin plate-shaped cutter or a cutting saw from the cutting line 311, and the power required for driving the breaking element 31 to move may be provided only by the rotary driving source. Specifically, the connection unit 20 includes a transmission assembly that also penetrates through the furnace cover 210 and extends into the crystal growth furnace 200, and the transmission assembly can rotate relative to the crystal growth furnace 200; the structure and arrangement of the mounting body 10 may be the same as in the first embodiment, and remain substantially unchanged. The power unit 40 comprises a rotary driving source arranged at the displacement output end of the lifting driving unit 11, the cut-off unit 30 is arranged at the part of the transmission component extending into the furnace body 220, the cut-off unit 30 comprises a driven component, the driven component and the transmission component form force transmission connection, namely, if the transmission component is driven by the rotary driving source, the transmission component can output power to the driven component, and therefore the driven component is driven to move.

The force transmission connection or the follow-up connection is formed between the broken wafer element 31 and the driven assembly, namely the broken wafer element 31 can accept the power movement input by the driven assembly and can also move synchronously with the driven assembly as a whole. The rotary driving source drives the transmission assembly to rotate on the one hand to drive the cut-off unit 30 to rotate along with the transmission assembly to be close to or far away from the seed crystal 410, and on the other hand, the transmission assembly can convert part of power of the rotary driving source into power for driving the driven assembly, so long as the transmission assembly rotates relative to the furnace cover 210 and the furnace body 220, the driven assembly can move simultaneously corresponding to the movement of the transmission assembly immediately, and the broken wafer element 31 is driven to move along with the self-movement to actively rub the seed crystal 410.

Optionally, the transmission assembly includes a transmission shaft 21 and a driving wheel, the transmission shaft 21 penetrates through the furnace cover 210 and extends into the furnace body 220, the driving wheel is mounted on a portion of the transmission shaft 21 extending into the furnace body 220, and the transmission shaft 21 and the driving wheel are coaxially arranged and circumferentially fixed with respect to an axis of the transmission shaft 21; the rotary driving source can be a rotary motor, a rotary electric cylinder or a rotary air cylinder 43, is connected with one end of the transmission shaft 21 outside the crystal growth furnace 200, and is used for driving the transmission shaft 21 to rotate around the axis of the transmission shaft; after the rotation driving source is activated, the transmission shaft 21 and the driving wheel can be rotated synchronously at the same angular velocity.

The cutting unit 30 comprises a carrier 33 and a driven wheel, wherein the carrier 33 is fixedly connected with the transmission shaft 21 in the circumferential direction at least about the axis of the transmission shaft 21, preferably the carrier 33 is fixedly connected with the tail end of the transmission shaft 21 extending into the furnace body 220; the driven wheel is rotatably mounted on the carrier 33 and is connected with the driving wheel in a tooth meshing manner, and the disconnecting element 31 can be in force transmission connection with the driven wheel through tooth meshing, and can also be fixedly connected with the driven wheel in the circumferential direction of the axis of the driven wheel, so long as the disconnecting element 31 can move synchronously along with the movement of the driven wheel.

Alternatively, the wafer breaking element 31 may be a disk-shaped rotary cutter or a disk-shaped rotary cutter blade having a tooth protrusion at its periphery, and the rotary cutter or the rotary cutter blade may be coaxially disposed with the driven wheel and circumferentially fixed with respect to the axis of the driven wheel, or may be fixedly provided with a gear-shaped boss, and is engaged with the driven wheel through the gear-shaped boss.

The driven wheel and the driving wheel can be directly meshed and connected, and can also be connected through an intermediate transition gear. It will be appreciated that in other embodiments, the driven wheel and the driving wheel may be in force-transmitting connection by other means, such as a linkage, belt, rope or chain connection.

Since the driven wheel is rotatably arranged relative to the carrier 33, and the breaking element 31 is meshed with or connected with the driven wheel in a follow-up manner, when the rotating driving source drives the transmission shaft 21 to rotate, although the carrier 33 can continue to rotate synchronously along with the transmission shaft 21 to drive the breaking element 31 to be close to the seed crystal 410 or far away from the seed crystal 410, the driven wheel can receive a part of power from the driving wheel and distribute the power to the breaking element 31 to rotate relative to the carrier 33, so that the breaking element 31 can revolve around the axis of the transmission shaft 21 along with the carrier 33, and can rotate around the axis of the carrier to achieve the purpose of cutting off the seed crystal 410.

Compared with the first embodiment, the second embodiment does not need to separately provide a cutting driving source for the breaking element 31, and the rotary driving source can simultaneously provide power for changing the posture of the truncation unit 30 in the furnace body 220 and power for driving the breaking element 31 to move so as to rub crystals, so that the structure is simpler, the electric control setting is simpler, and the cost is lower.

EXAMPLE III

The invention further provides a crystal truncation method based on the crystal truncation device 100, and the crystal truncation device 100 may be the crystal truncation device 100 of the first embodiment or the second embodiment, and includes the following steps:

s10, adjusting the height position of the truncation unit 30 in the crystal growth furnace 200 so that the truncation unit 30 reaches a preset crystal cutting height;

s20, maintaining the truncation unit 30 at a preset crystal cutting height, and adjusting the pose of the truncation unit 30 to enable the truncation element 31 to contact the seed crystal 410;

s30, driving the broken wafer element 31 to move by using the power unit 40, so that the broken wafer element 31 rubs the seed crystal 410 until the seed crystal 410 is broken;

s40, opening the crystal growth furnace 200, and taking out the crystal bar 420 and the seed crystal 410.

Step S10 can be specifically realized by the lifting driving unit 11 providing power, and the lifting driving unit 11 cooperating with the electric cylinder 12 to drive the connecting unit 20 to move up and down, and the present invention does not only limit the position of the preset wafer cutting height, as long as the height position of the wafer cutting element 31 of the cutting unit 30 is just within the height range of the seed crystal 410 when the cutting unit 30 is at the preset wafer cutting height.

In step S20, the cutting unit 30 is maintained at the preset dicing height by the elevation driving unit 11, and the elevation driving unit 11 cooperates with the electric cylinder 12 to lock the height of the elevation frame 13 relative to the furnace cover 210, so as to control the height of the connection unit 20; the power is provided by the rotary driving source of the power unit 40, the rotary driving source drives the transmission shaft 21 of the connection unit 20 to rotate, and the cutting unit 30 is driven to synchronously rotate along with the transmission shaft 21, so that the cutting element 31 is close to the seed crystal 410 until the cutting element contacts the seed crystal 410.

Step S30, when the crystal truncating device 100 according to the first embodiment is implemented, the cutting driving source of the power unit 40 drives the first shaft 323 to rotate, the first shaft 323 drives the first wheel 321 to rotate, the first wheel 321 and the second wheel 322 cooperatively drive the cutting line 311 to rotate, and the seed crystal 410 is rubbed by the tightening section 3111 of the cutting line 311; when this step is performed based on the crystal cutting apparatus 100 of the second embodiment, the rotary driving source of the power unit 40 drives the cutting unit 30 to approach the seed crystal 410, while a part of the power is transmitted to the driven assembly, and the cutting element 31 rubs the seed crystal 410 while following the movement of the driven assembly. Therefore, when the above method is implemented based on the crystal-slicing apparatus 100 of the second embodiment, step S20 and step S30 are performed simultaneously, that is, in the same period of time, the slicing unit 30 rotates following the driving shaft 21 simultaneously with the slicing element 31 rubbing the seed crystal 410.

In step S40, after the seed crystal 410 is cut off, the seed crystal 410 is lifted up by the upper shaft 300 and the furnace cover 210 is lifted up, and then the person opens the furnace cover 210.

Optionally, the crystal truncation method further comprises the following steps:

s50, adjusting the pose of the truncation unit 30 to enable the truncation element 31 to leave the seed crystal 410;

s60, adjusting the height position of the cutting unit 30 in the crystal growth furnace 200 so that the cutting unit 30 reaches the lower side of the inner wall of the furnace cover 210.

Specifically, after cutting off the seed crystal 410, the driving shaft 21 needs to be driven to rotate by the rotary driving source, so as to drive the cutting unit 30 to rotate along with the driving shaft 21 to be away from the seed crystal 410 until a sufficient offset distance is formed between the cutting element 31 and the seed crystal 410, and thus the upper shaft 300 is not easy to interfere with the cutting unit 30 when lifting up the seed crystal 410. In addition, since the residual heat still exists in the crystal growth furnace 200, after the seed crystal 410 is cut off, the cutting unit 30 needs to be withdrawn from the hollow region surrounded by the furnace felt 230 in time, so as to drive the cutting unit 30 to reach the lower side of the inner wall of the furnace cover 210 with relatively low temperature, thereby preventing the cutting unit 30 from being damaged by high temperature roasting.

Example four

The present invention also provides a crystal growth apparatus having a crystal cutting device 100, in some embodiments, the mounting body 10 is fixedly installed outside the crystal growth furnace 200, the connection unit 20 penetrates through the furnace cover 210 and extends into the crystal growth furnace 200, and the cutting unit 30 is installed at a portion of the connection unit 20 extending into the crystal growth furnace 200.

The features of the above-described embodiments may be combined arbitrarily, and for the sake of brevity, all possible combinations of the features in the above-described embodiments will not be described in detail, but should be construed as being within the scope of the present disclosure unless there is any conflict between such combinations of features.

It should be understood by those skilled in the art that the above embodiments are only for illustrating the present invention and are not to be used as a limitation of the present invention, and that suitable changes and modifications of the above embodiments are within the scope of the claimed invention as long as they are within the spirit and scope of the present invention.

Claims

1. The crystal cutting device is characterized by comprising a connecting unit (20) and a cutting unit (30), wherein the connecting unit (20) is at least partially arranged in a crystal growth furnace (200), the cutting unit (30) is installed on the connecting unit (20), and the cutting unit (30) is installed on the part, located in the crystal growth furnace (200), of the connecting unit (20);

cut unit (30) including mobilizable disconnected wafer spare (31), disconnected wafer spare (31) is including line of cut (311) and overhead line subassembly (32), line of cut (311) tensioning connect in overhead line subassembly (32) and formation tighten section (3111), the crystal cuts the device and still including connecting power pack (40) of overhead line subassembly (32), power pack (40) can drive overhead line subassembly (32) activity and drive tighten section (3111) activity friction crystal, so that the crystal contact the position fracture of disconnected wafer spare (31).

2. The crystal truncation device of claim 1, wherein the string supporting assembly (32) comprises a first wheel body (321) and a second wheel body (322) which are axially arranged in parallel, the cutting string (311) is sleeved on the first wheel body (321) and the second wheel body (322), and the power unit (40) is in driving connection with the first wheel body (321) or the second wheel body (322).

3. The crystal truncation device of claim 2, wherein the truncation unit (30) further comprises a carriage (33), the carriage (33) is mounted to a portion of the connection unit (20) located within the crystal growth furnace (200), and the first wheel (321) and the second wheel (322) are disposed at one side of the carriage (33);

the carrier (33) is provided with a crystal avoiding groove (331), the portion of the cutting line (311) tangent to the first wheel body (321) and the second wheel body (322) forms the tightening section (3111), and in a plane perpendicular to the axial direction of the first wheel body (321), the projection of the tightening section (3111) is located in the notch projection of the crystal avoiding groove (331); and/or the like, and/or,

the truncation unit (30) further comprises a tension adjustment assembly (34), one of the first wheel body (321) or the second wheel body (322) is movably mounted on the carrier (33) and connected with the tension adjustment assembly (34), and the tension adjustment assembly (34) can increase the axle center distance between the first wheel body (321) and the second wheel body (322) to tension the cutting line (311).

4. Crystal truncation device according to claim 1, wherein the connection unit (20) comprises a rotatable transmission assembly, the power unit (40) is in driving connection with the transmission assembly, and the truncation unit (30) is mounted on the transmission assembly and can rotate along with the transmission assembly to approach or move away from the crystal;

cut unit (30) still include driven component, driven component with drive assembly biography power connection, disconnected wafer spare (31) with driven component biography power connection or follow-up connection.

5. The crystal cutting device according to claim 1, characterized in that the connecting unit (20) comprises a transmission shaft (21) penetrating through a furnace cover (210) of the crystal growth furnace (200), the cutting unit (30) is mounted on the transmission shaft (21), the power unit (40) is connected with the transmission shaft (21) and can drive the cutting unit (30) to rotate along with the transmission shaft (21) to approach or depart from the crystal; the connecting unit (20) further comprises a rotary sealing sleeve (22) sleeved on the transmission shaft (21), and the transmission shaft (21) is in rotary sealing fit with the furnace cover (210) through the rotary sealing sleeve (22).

6. The crystal cutting device according to claim 1, further comprising a lifting driving unit (11), wherein the connection unit (20) is mounted at a displacement output end of the lifting driving unit (11), and the lifting driving unit (11) is used for driving the connection unit (20) to move along a preset track, so that the cutting unit (30) moves to a preset crystal cutting height or reaches one side of an inner wall of a furnace cover (210) of the crystal growth furnace (200).

7. The crystal cut-off device of claim 6, further comprising a cooling liquid path capable of receiving and storing a cooling medium, wherein the wall of the cooling liquid path is in heat conduction connection with the furnace cover (210); and/or the presence of a catalyst in the reaction mixture,

the inner wall of the furnace cover (210) is provided with a containing chamber sunken to the outer wall of the furnace cover (210), and when the connecting unit (20) moves to a rising limit position, the cut-off unit (30) is positioned in the containing chamber.

8. A crystal growth apparatus, comprising a crystal growth furnace (200) and a crystal intercepting device according to any one of claims 1 to 7, wherein the connecting unit (20) is at least partially disposed within the crystal growth furnace (200), and the intercepting unit (30) is mounted to a portion of the connecting unit (20) within the crystal growth furnace (200).

9. A crystal truncation method based on the crystal growth apparatus of claim 8, comprising:

A. adjusting the height position of the truncation unit (30) in the crystal growth furnace (200) so as to enable the truncation unit (30) to reach a preset crystal cutting height;

B. adjusting the pose of the truncation unit (30) so that the truncation element (31) contacts the seed crystal;

C. driving the seed crystal breaking element (31) to move by using a power unit (40), so that the seed crystal is rubbed by the seed crystal breaking element (31) until the seed crystal is broken;

D. and opening the crystal growth furnace (200) and taking out the seed crystal and the crystal bar.