CN102312285B - External continuous feeding mechanism for monocrystal furnace - Google Patents
External continuous feeding mechanism for monocrystal furnace Download PDFInfo
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- CN102312285B CN102312285B CN201110186157.4A CN201110186157A CN102312285B CN 102312285 B CN102312285 B CN 102312285B CN 201110186157 A CN201110186157 A CN 201110186157A CN 102312285 B CN102312285 B CN 102312285B
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Abstract
The invention relates to auxiliary equipment for Czochralski silicon growth equipment, and aims to provide an external continuous feeding mechanism for a monocrystal furnace. The feeding mechanism includes a bunker with a seal cover; a discharge valve is arranged on bunker bottom; the discharge valve is connected to a discharge inner pipe, which is sleeved by a discharge outer pipe; the discharge outer pipe is connected with a transmission mechanism for realizing telescoping of the discharge outer pipe along a discharge inner pipe extending direction, and the discharge inner pipe, the discharge outer pipe and the transmission mechanism are all arranged inside an airtight cylinder; an airtight cylinder bottom is equipped with a globe valve or a flap valve; an feeding inlet is arranged on an upper part of a main furnace chamber of the monocrystal furnace, and is connected with the globe valve or the flap valve in an airtight way. According to the invention, material charging can be realized without furnace halt to facilitate continuous growth of multiple crystals and save time require by furnace halt, furnace rubbing, charging, vacuum-pumping and material melting, so as to substantially increase production efficiency and utilization rate of a quartz crucible and lower costs effectively.
Description
Technical field
The present invention relates to the utility appliance of Modelling of Crystal Growth in CZ-Si Pulling equipment, particularly a kind of outside continuous dosing mechanism for single crystal growing furnace.
Background technology
Traditional straight pulling silicon single crystal furnace, after completing a stove raw material crystal pulling and producing, is required to be the production of preparing a new stove and does a lot of numerous and diverse previous works, comprises that blowing out is cooling, wipes stove, feeds, vacuumizes, the operation such as material.The previous work that these are numerous and diverse, has wasted a lot of time.Because each production cycle charging capacity is more, draw crystal heavier, unit source is less, and efficiency is also higher.Since crystal for straight drawing monocrystal growth stove comes into operation, existing 93 years so far, but such situation fails effectively to be improved all the time.In addition, self has work-ing life quartz crucible, how in its length of life, to improve to greatest extent single stove charging capacity, improves quartz crucible utilization ratio, brings serious puzzlement to related production enterprise always.
Summary of the invention
The technical problem to be solved in the present invention is, overcomes deficiency of the prior art, and a kind of outside continuous dosing mechanism for single crystal growing furnace is provided.
For technical solution problem, the solution of the present invention is: use small one and large one two silica tubes as feeding channel, large quartz pipe sleeve is outside little silica tube, by stretching of the large silica tube of transmission mechanism control, ball valve or flap valve are used for isolating main stove and batch charging mechanism, can batch charging mechanism be completed separately and be vacuumized and applying argon gas, dispensing valve be used for throwing in polycrystalline silicon material, by controlling dispensing valve aperture, controls polycrystalline silicon material dispensing speed.
The invention provides a kind of outside continuous dosing mechanism for single crystal growing furnace, comprise the feed bin of a with closure, bin bottom is established dispensing valve; Dispensing valve is connected to a blowing inner tube, the sheathed blowing outer tube in outside of blowing inner tube; Blowing outer tube is connected along the flexible transmission rig of blowing inner tube extending direction for realizing blowing outer tube with one, and blowing inner tube, blowing outer tube and transmission rig are all located in airtight cylinder; A ball valve or flap valve are established in airtight cylinder bottom, and the main furnace chamber top of single crystal growing furnace is provided with a dog-house, and dog-house and ball valve or flap valve are tightly connected.
As a kind of improvement, described sealing cover is realized sealing by O type circle and feed bin.
As a kind of improvement, described blowing inner tube or blowing outer tube are silica tube.
As a kind of improvement, described dispensing valve, ball valve or flap valve are realized valve opening and closing by pneumatics and are controlled.
As a kind of improvement, described transmission rig comprises trip switch, stepper-motor and transmission rope.
As a kind of improvement, on the wall of described airtight cylinder, at least one is set with the interface of valve.
As a kind of improvement, the dog-house on described main furnace chamber top is oblique offering, and makes blowing inner tube and blowing outer tube and vertical direction be an angle.
As a kind of improvement, described blowing outer tube stretches out and arrives after limit point along blowing inner tube extending direction, and blowing outer tube end-to-end distance is from the bath surface 50mm～200mm of main furnace chamber inside.
As a kind of improvement, the structure of described flap valve is: a side of the inner valve plate of flap valve is movably connected on rotation axis, valve plate is controlled and is realized action by pneumatics: during open mode, airtight cylinder is communicated with main furnace chamber, during closing condition, by the O type circle on valve plate, realizes sealing.
The invention has the beneficial effects as follows:
The present invention can realize charging in the situation that not needing blowing out, to grow continuously many crystal, saved blowing out cooling, wipe stove, feed, vacuumize, the required time of step such as material, significantly improved production efficiency, improve quartz crucible utilization ratio.After tested, adopt after the present invention, can realize single stove and draw 3 above monocrystalline, separate unit single crystal growing furnace is annual, and therefore increasing effective run time can reach 500 hours, therefore at least can enhance productivity and reach more than 8%.More than single stove monocrystalline output is brought up to 180kg by 80kg, plumbago crucible effective storage life increases by 80%, and quartz crucible service efficiency improves more than 200%, and unit production capacity power consumption is saved and surpassed 30%, effectively reduces costs.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that possesses the single crystal growing furnace of outside continuous dosing mechanism;
Schematic diagram when Fig. 2 is single crystal growing furnace in Fig. 1 reinforced;
Reference numeral: 1 feed bin, 2 dispensing valves, 3 blowing inner tubes, 4 transmission rigs, 5 airtight cylinders, 6 blowing outer tubes, 7 pneumatics two, 8 interfaces, 9 flap valves, 10O type circle one, 11 main furnace chamber, 12 pneumatics one, 13 sealing covers, 14O type circle two
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is explained in detail.
In the present invention, for the outside continuous dosing mechanism of single crystal growing furnace, comprise the feed bin 1 of a with closure 13, middlely with O type circle 2 14, be connected and sealed, dispensing valve 2 is established in bottom; Feed bin 1 is for taking up polycrystalline silicon material, and single takes up polycrystalline silicon material gross weight and is not less than 30kg.
Dispensing valve 2 is controlled blowing amount, the blowing outer tube 6 of the sheathed quartzy material in outside of blowing inner tube 3 by pneumatics 1; Blowing outer tube 6 is connected along the flexible transmission rig 4 of blowing inner tube 3 extending directions for realizing blowing outer tube 6 with one.Transmission rig 4 comprises trip switch, stepper-motor and transmission rope, can adopt conventional techniques to realize.Blowing inner tube 3, blowing outer tube 6 and transmission rig 4 are all located in airtight cylinder 5, and a flap valve 9 is established in airtight cylinder 5 bottoms, have 0 type circle 1 to realize between airtight cylinder 5 and main furnace chamber 11 and be tightly connected on flap valve; On the wall of airtight cylinder 5, the interface 8 with valve is set, for vacuumizing and applying argon gas.
The single crystal growing furnace matching with it, its main furnace chamber top is provided with a dog-house, and the flap valve 9 of dog-house and airtight cylinder 5 bottoms is tightly connected.Because dog-house is oblique offering, make blowing inner tube 3 and blowing outer tube 6 be an angle with vertical direction.
The using method of the outside continuous dosing of single crystal growing furnace mechanism comprises:
In quartz crucible, silicon liquid is discontented with in the time of need to feeding in raw material, and first airtight cylinder 5 is repeated to vacuumize and applying argon gas operation twice, regulates airtight cylinder 5 interior gaseous tensions, makes it identical with main furnace chamber 11 gaseous tensions.By pneumatics 27, control the flap valve 9 of opening airtight cylinder 5 bottoms, start transmission rig 4 make blowing outer tube 6 extend out to main furnace chamber 11 blowing outer tubes 6 end-to-end distance along blowing inner tube 3 extending directions from bath surface 50mm～200mm apart from time, close transmission rig 4 and make blowing outer tube 6 stop declining.Open dispensing valve 2, and the aperture of controlling dispensing valve 2 by pneumatics 1 is controlled the rate of feeding of polycrystalline silicon material.Feed intake and reach after plan weight, close dispensing valve 2, start transmission rig 4 by the airtight cylinder 5 of blowing outer tube 6 retraction, close flap valve 9, complete the process of feeding intake.
Claims (6)
1. for the outside continuous dosing mechanism of single crystal growing furnace, comprise the feed bin of a with closure, bin bottom is established dispensing valve; It is characterized in that, dispensing valve is connected to a blowing inner tube, the sheathed blowing outer tube in outside of blowing inner tube; Blowing outer tube is connected along the flexible transmission rig of blowing inner tube extending direction for realizing blowing outer tube with one, and blowing inner tube, blowing outer tube and transmission rig are all located in airtight cylinder; A ball valve or flap valve are established in airtight cylinder bottom, and the main furnace chamber top of single crystal growing furnace is provided with a dog-house, and dog-house and ball valve or flap valve are tightly connected; The dog-house on described main furnace chamber top is oblique offering, and makes blowing inner tube and blowing outer tube and vertical direction be an angle; Described blowing inner tube or blowing outer tube are silica tube, and blowing outer tube stretches out and arrives after limit point along blowing inner tube extending direction, and blowing outer tube end-to-end distance is from the bath surface 50mm～200mm of main furnace chamber inside.
2. the outside continuous dosing mechanism for single crystal growing furnace according to claim 1, is characterized in that, described in.Sealing cover is realized sealing by O type circle and feed bin
3. the outside continuous dosing mechanism for single crystal growing furnace according to claim 1, is characterized in that, described dispensing valve, ball valve or flap valve are realized valve opening and closing by pneumatics and controlled.
4. the outside continuous dosing mechanism for single crystal growing furnace according to claim 1, is characterized in that, described transmission rig comprises trip switch, stepper-motor and transmission rope.
5. the outside continuous dosing mechanism for single crystal growing furnace according to claim 1, is characterized in that, on the wall of described airtight cylinder, at least one is set with the interface of valve.
6. the outside continuous dosing mechanism for single crystal growing furnace according to claim 1, it is characterized in that, the structure of described flap valve is: a side of the inner valve plate of flap valve is movably connected on rotation axis, valve plate is controlled and is realized action by pneumatics: during open mode, airtight cylinder is communicated with main furnace chamber, during closing condition, by the O type circle on valve plate, realizes sealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110186157.4A CN102312285B (en) | 2011-07-04 | 2011-07-04 | External continuous feeding mechanism for monocrystal furnace |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110186157.4A CN102312285B (en) | 2011-07-04 | 2011-07-04 | External continuous feeding mechanism for monocrystal furnace |
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| CN102312285A CN102312285A (en) | 2012-01-11 |
| CN102312285B true CN102312285B (en) | 2014-02-19 |
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| CN201110186157.4A Active CN102312285B (en) | 2011-07-04 | 2011-07-04 | External continuous feeding mechanism for monocrystal furnace |
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102618919B (en) * | 2012-03-13 | 2015-05-06 | 杭州奔博科技有限公司 | Charging device for single crystal furnace |
| CN103451722A (en) * | 2013-08-06 | 2013-12-18 | 浙江晶盛机电股份有限公司 | External continuous feeder capable of being shared by multiple coil bases |
| CN104264229B (en) * | 2014-10-09 | 2016-08-24 | 河北晶龙阳光设备有限公司 | A kind of online doper of single crystal growing furnace |
| CN108728902A (en) * | 2017-04-18 | 2018-11-02 | 上海新昇半导体科技有限公司 | A kind of polysilicon automatic feed system and its feed process |
| CN108103568A (en) * | 2017-12-20 | 2018-06-01 | 江苏拜尔特光电设备有限公司 | The automatic feeding device and its operating method of single crystal growing furnace |
| CN109989106A (en) * | 2017-12-31 | 2019-07-09 | 江苏拜尔特光电设备有限公司 | Dual rotary pulling apparatus and its switching method |
| CN108326016A (en) * | 2018-04-11 | 2018-07-27 | 河北瑞塞可环保科技有限责任公司 | A kind of production method and system handling kitchen garbage using black soldier flies |
| CN109440184A (en) * | 2018-12-19 | 2019-03-08 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace continuous dosing conveying mechanism |
| CN112342610A (en) * | 2020-10-31 | 2021-02-09 | 常州松瓷机电有限公司 | Novel external charging machine of single crystal furnace |
| CN112522778B (en) * | 2020-11-30 | 2022-07-12 | 晶科能源股份有限公司 | Feeding device and single crystal furnace |
| CN113249779B (en) * | 2021-04-20 | 2022-03-15 | 上海新昇半导体科技有限公司 | Flap valve, crystal pulling furnace, feeding method and crystal pulling method |
| CN113584573B (en) * | 2021-08-17 | 2022-12-20 | 江苏神汇新型陶瓷材料科技有限公司 | External impurity-absorbing feeding method for single crystal furnace |
| CN114561689A (en) * | 2022-02-17 | 2022-05-31 | 徐州鑫晶半导体科技有限公司 | Feeding pipe, single crystal growth equipment and feeding method thereof |
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| CN1153230A (en) * | 1995-10-31 | 1997-07-02 | Memc电子材料有限公司 | Solid material delivery system for furnace |
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Inventor after: Zhu Liang Inventor after: Cao Jianwei Inventor after: Qiu Minxiu Inventor after: Wang Wei Inventor after: Shen Xingchao Inventor before: Zhu Liang Inventor before: Cao Jianwei Inventor before: Qiu Minxiu Inventor before: Wang Wei Inventor before: Shen Xingchao |
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