CN103014837A - Secondary charging method for single crystal furnace - Google Patents
Secondary charging method for single crystal furnace Download PDFInfo
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- CN103014837A CN103014837A CN2012105748293A CN201210574829A CN103014837A CN 103014837 A CN103014837 A CN 103014837A CN 2012105748293 A CN2012105748293 A CN 2012105748293A CN 201210574829 A CN201210574829 A CN 201210574829A CN 103014837 A CN103014837 A CN 103014837A
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Abstract
The invention discloses a secondary charging method for a single crystal furnace. The method comprises the steps of after the growth of a first silicon single crystal rod, remaining a part of polycrystalline silicon solution in a crucible in a main furnace chamber, lifting the first silicon single crystal rod into an auxiliary furnace chamber, switching off an isolating valve, lifting the auxiliary furnace chamber by a lifting mechanism and rotating to be opened, taking out the first silicon single crystal rod, suspending a rodlike polycrystalline silicon raw material on a steel wire flexible shaft through a manipulator finger, rotating the auxiliary furnace chamber to be placed at the top of the main furnace chamber, switching on the isolating valve, releasing the steel wire flexible shaft by a seed crystal lifting mechanism, slowly feeding the rodlike polycrystalline raw material into the crucible through the manipulator finger at the lower end of the steel wire flexible shaft, starting a heating system to melt the rodlike polycrystalline raw material, smoothly adding the polycrystalline raw material into the crucible, thereby realizing secondary charging and meeting the growth of a second silicon single crystal rod. According to the method, the auxiliary time can be greatly shortened, and the working efficiency can be improved.
Description
Technical field
The invention belongs to mechanical equipment technical field, relate to a kind of single crystal growing furnace secondary charging method.
Background technology
Single crystal growing furnace is the specific equipment of growing silicon single crystal, in the actual silicon single crystal growth process, in order to improve the work-ing life of crucible, energy saving, enhance productivity, need in same crucible, grow finish a silicon single crystal bar after, in crucible, carry out adding the second time again raw material, carry out immediately the growth of second silicon single crystal bar.
At present, secondary charging method commonly used is, at first rod-like polycrystal silicon raw material crushing is become less bulk, then the chunk polysilicon raw material is fed in raw material by auxiliary charging mechanism, employed auxiliary charging mechanism is complex structure not only, and because out-of-shape, the disunity of bulk or granular feedstock, tend to occur catching phenomenon, cause and feed in raw material unsuccessfully, produce thereby impact is normal, cause very large loss.
Summary of the invention
The purpose of this invention is to provide a kind of single crystal growing furnace secondary charging method, solved used high, the problem time-consuming, easy clamping stagnation of feeding in raw material of auxiliary mechanism's complex structure, cost of secondary charging in the prior art.
The technical solution adopted in the present invention is, a kind of single crystal growing furnace secondary charging method, after finishing the growth of first silicon single crystal bar, by seed crystal hoisting appliance, Bowden cable and mechanical gripper rod-like polycrystal silicon raw material directly is lowered in the crucible and melts, realize smoothly secondary charging.
Single crystal growing furnace secondary charging method of the present invention is further characterized in that: after finishing first silicon single crystal bar growth, and must a part of polysilicon liquation of residue in the crucible in main furnace chamber.
The invention has the beneficial effects as follows, need not rod-like polycrystal silicon raw material crushing, directly rod-like polycrystal silicon raw material is hung on mechanical gripper, by seed crystal hoisting appliance, Bowden cable rod-like polycrystal silicon raw material directly is lowered in the crucible and melts, shortened process not only, simplify charging mechanism, reduced pollution section, shortened simultaneously non-cutting time, reduced energy consumption.Easy to operate, reliability is high, has improved the production efficiency of monocrystal stove, be widely used in the growth techniques such as silicon single-crystal, germanium single crystal, optical crystal.
Embodiment
Single crystal growing furnace secondary charging method of the present invention is, rod-like polycrystal silicon raw material is hung on Bowden cable by mechanical gripper, by seed crystal hoisting appliance (or weight hoisting appliance) rod-like polycrystal silicon raw material is directly hung in the crucible and to melt, fusing is carried out silicon monocrystal growth according to normal operation after finishing again.
The specific operation process of single crystal growing furnace secondary charging method of the present invention is, after finishing first silicon single crystal bar growth, the a part of polysilicon liquation of residue in the crucible under the effect of the heating system in main furnace chamber, after lifting first silicon single crystal bar to the secondary furnace chamber, close segregaion valve, then, by lifting mechanism secondary furnace chamber being promoted rear rotation opens, take out first silicon single crystal bar, then by mechanical gripper rod-like polycrystal silicon raw material is hung on Bowden cable, again secondary furnace chamber rotation is seated to main furnace chamber top, open segregaion valve, transfer Bowden cable by the seed crystal hoisting appliance, the mechanical gripper of Bowden cable lower end is sent into rod-like polycrystal silicon raw material in the crucible lentamente, starts heating system and makes the fusing of rod-like polycrystal silicon raw material, successfully polycrystalline silicon raw material is added in the crucible, realize secondary charging, to satisfy the growth of second silicon single crystal bar.
The innovation of the inventive method is, after finishing first silicon single crystal bar growth, by seed crystal hoisting appliance, Bowden cable and mechanical gripper with rod-like polycrystal silicon raw material direct fusion in crucible, realize smoothly secondary charging, simple in structure, easily operation, save energy.
Claims (2)
1. single crystal growing furnace secondary charging method is characterized in that: after finishing first silicon single crystal bar growth, by seed crystal hoisting appliance, Bowden cable and mechanical gripper rod-like polycrystal silicon raw material directly is lowered in the crucible and melts, realize smoothly secondary charging.
2. single crystal growing furnace secondary charging method according to claim 1 is characterized in that: after finishing first silicon single crystal bar growth, must remain a part of polysilicon liquation in the crucible in main furnace chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105748293A CN103014837A (en) | 2012-12-26 | 2012-12-26 | Secondary charging method for single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105748293A CN103014837A (en) | 2012-12-26 | 2012-12-26 | Secondary charging method for single crystal furnace |
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| CN103014837A true CN103014837A (en) | 2013-04-03 |
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| CN2012105748293A Pending CN103014837A (en) | 2012-12-26 | 2012-12-26 | Secondary charging method for single crystal furnace |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105332047A (en) * | 2015-12-09 | 2016-02-17 | 天津市环欧半导体材料技术有限公司 | Device for repeatedly feeding materials to pulling single crystal furnace |
| CN105463565A (en) * | 2015-11-25 | 2016-04-06 | 四川神光石英科技有限公司 | Quartz glass melting furnace |
| CN106987897A (en) * | 2017-04-28 | 2017-07-28 | 西安创联新能源设备有限公司 | A kind of improved single crystal furnace structure and its application |
| CN110195256A (en) * | 2019-06-10 | 2019-09-03 | 苏州亚傲鑫企业管理咨询有限公司 | Monocrystalline silicon repeatedly feeds the device continuously grown and technique |
| WO2021098347A1 (en) * | 2019-11-22 | 2021-05-27 | 中国电子科技集团公司第十三研究所 | System for preparing indium phosphide crystal from indium phosphorus mixture |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20020108557A1 (en) * | 2000-10-31 | 2002-08-15 | Wood Henry D. | Rod replenishment system for use in single crystal silicon production |
| CN101698960A (en) * | 2009-11-09 | 2010-04-28 | 西安隆基硅材料股份有限公司 | Material supplementing method and material supplementing device for pulling of crystals |
| CN201506846U (en) * | 2009-10-16 | 2010-06-16 | 常州天合光能有限公司 | Secondary charging circular-rod fixture for monocrystalline furnace |
| CN202220214U (en) * | 2011-07-26 | 2012-05-16 | 青海华硅能源有限公司 | Secondary feeding device for czochralski mono-crystal furnace |
| CN202492613U (en) * | 2012-02-28 | 2012-10-17 | 安徽江威精密制造有限公司 | Czochralski growing method for sapphire single crystals |
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2012
- 2012-12-26 CN CN2012105748293A patent/CN103014837A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020108557A1 (en) * | 2000-10-31 | 2002-08-15 | Wood Henry D. | Rod replenishment system for use in single crystal silicon production |
| CN201506846U (en) * | 2009-10-16 | 2010-06-16 | 常州天合光能有限公司 | Secondary charging circular-rod fixture for monocrystalline furnace |
| CN101698960A (en) * | 2009-11-09 | 2010-04-28 | 西安隆基硅材料股份有限公司 | Material supplementing method and material supplementing device for pulling of crystals |
| CN202220214U (en) * | 2011-07-26 | 2012-05-16 | 青海华硅能源有限公司 | Secondary feeding device for czochralski mono-crystal furnace |
| CN202492613U (en) * | 2012-02-28 | 2012-10-17 | 安徽江威精密制造有限公司 | Czochralski growing method for sapphire single crystals |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105463565A (en) * | 2015-11-25 | 2016-04-06 | 四川神光石英科技有限公司 | Quartz glass melting furnace |
| CN105332047A (en) * | 2015-12-09 | 2016-02-17 | 天津市环欧半导体材料技术有限公司 | Device for repeatedly feeding materials to pulling single crystal furnace |
| CN106987897A (en) * | 2017-04-28 | 2017-07-28 | 西安创联新能源设备有限公司 | A kind of improved single crystal furnace structure and its application |
| CN110195256A (en) * | 2019-06-10 | 2019-09-03 | 苏州亚傲鑫企业管理咨询有限公司 | Monocrystalline silicon repeatedly feeds the device continuously grown and technique |
| WO2021098347A1 (en) * | 2019-11-22 | 2021-05-27 | 中国电子科技集团公司第十三研究所 | System for preparing indium phosphide crystal from indium phosphorus mixture |
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Application publication date: 20130403 |