CN202492613U - Czochralski growing method for sapphire single crystals - Google Patents
Czochralski growing method for sapphire single crystals Download PDFInfo
- Publication number
- CN202492613U CN202492613U CN 201220066242 CN201220066242U CN202492613U CN 202492613 U CN202492613 U CN 202492613U CN 201220066242 CN201220066242 CN 201220066242 CN 201220066242 U CN201220066242 U CN 201220066242U CN 202492613 U CN202492613 U CN 202492613U
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- CN
- China
- Prior art keywords
- sapphire single
- heater
- crucible
- lifting rod
- furnace
- Prior art date
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- Expired - Fee Related
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Abstract
The utility model discloses a Czochralski growing method for sapphire single crystals. The Czochralski growing method comprises a furnace body and a crucible, wherein a feeding outlet is arranged at the top of the furnace; a pulling rod is arranged in the feeding inlet, penetrates through the feeding rod and stretches downward into the furnace body; and the crucible is installed in the furnace body and coated with a quartz ring around, and the quartz ring is wound with a heating coil outside. The Czochralski growing method has the advantages of being simple in structure, low in manufacturing cost of devices, high in heating and insulating efficiencies, low in heat loss and high in energy consumption utilization rate.
Description
Technical field
The utility model relates to a kind of sapphire production technology, specifically is a kind of sapphire single-crystal body Czochralski grown device.
Background technology
The ultimate principle of crystal pulling method: crystal pulling method is that formation crystalline raw material is placed on heat fused in the crucible; Connect seed crystal at bath surface and lift melt; Under controlled condition; Make seed crystal and melt on interface, constantly carry out the arrangement again of atom or molecule, solidify gradually and grow single crystal with cooling.Right figure is the crystal pulling method synoptic diagram.Two, the crystalline raw material that the growth technique of crystal pulling method at first will be to be grown is placed on heat fused in the resistant to elevated temperatures crucible, and the adjustment temperature field in furnace makes melt top be in supercooled state; On seed rod, lay a seed crystal then, let seed crystal contact bath surface, treat that seed crystal face is molten slightly after, lift and rotate seed rod, make melt be in supercooled state and crystallization on seed crystal, constantly lift with rotary course in, grow cylinder crystal.
Problems such as there is unreasonable structure in existing processing units, causes crystallization velocity slow, and the crystalline product quality is low.
The utility model content
It is a kind of simple in structure that the utility model provides, and the device fabrication cost is low, heating, insulating efficiency height, the sapphire single-crystal body Czochralski grown device favourable to sapphire crystalline growth environment.
The utility model technical solution problem provides following scheme:
A kind of sapphire single-crystal body Czochralski grown device; Comprise body of heater, crucible, it is characterized in that: the top of said body of heater is provided with charging opening, in the said charging opening lifting rod is installed; Said lifting rod passes charging opening down in the stove; In the said body of heater crucible is installed, is enclosed with quartz ring around the said crucible, said quartz ring is around with heater coil.
Said lifting rod top is provided with pulling apparatus, is tightly connected between the sidewall of said lifting rod and charging opening.
Said side wall of furnace is provided with interlayer, and said interlayer sidewall is provided with water-in and water outlet.
Have vacuum-pumping tube on the said side wall of furnace, the external vacuum pump of said vacuum-pumping tube.
Said body of heater is provided with nitrogen and adds mouth.
Have observation port on the said side wall of furnace.
The utility model will constitute the crystalline raw material and be placed in the crucible when producing, and body of heater is sealed; Vacuum pump vacuumizes processing to body of heater, to charging into nitrogen in the body of heater, at last the heater coil on the quartz ring is switched on again; Heater coil carries out heat treated to crucible, and lifting rod is extend in the crucible, advances heat treated for a long time; Be accompanied by to lift to do and rise slowly and rotate, the surface at lifting rod gradually forms cylindric sapphire crystal.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Embodiment
Referring to accompanying drawing, a kind of sapphire single-crystal body Czochralski grown device comprises body of heater 1, crucible 2; The top of said body of heater 1 is provided with charging opening 3; In the said charging opening 3 lifting rod 4 is installed, said lifting rod 4 passes charging opening 3 down in the stove, in the said body of heater 1 crucible 2 is installed; Be enclosed with quartz ring 5 around the said crucible 2, said quartz ring 5 is around with heater coil 6.
Said lifting rod 4 tops are provided with pulling apparatus 7, are tightly connected between the sidewall of said lifting rod 4 and charging opening 3.
The sidewall of said body of heater 1 is provided with interlayer 8, and said interlayer 8 sidewalls are provided with water-in 9 and water outlet 10.
Have vacuum-pumping tube 11 on the sidewall of said body of heater 1, said vacuum-pumping tube 11 external vacuum pumps 12.
Said body of heater 1 is provided with nitrogen and adds mouth 13.
Have observation port 14 on the sidewall of said body of heater 1.
Claims (6)
1. sapphire single-crystal body Czochralski grown device; Comprise body of heater, crucible, it is characterized in that: the top of said body of heater is provided with charging opening, in the said charging opening lifting rod is installed; Said lifting rod passes charging opening down in the stove; In the said body of heater crucible is installed, is enclosed with quartz ring around the said crucible, said quartz ring is around with heater coil.
2. according to the said sapphire single-crystal body of claim 1 Czochralski grown device, it is characterized in that: said lifting rod top is provided with pulling apparatus, is tightly connected between the sidewall of said lifting rod and charging opening.
3. according to the said sapphire single-crystal body of claim 1 Czochralski grown device, it is characterized in that: said side wall of furnace is provided with interlayer, and said interlayer sidewall is provided with water-in and water outlet.
4. according to the said sapphire single-crystal body of claim 1 Czochralski grown device, it is characterized in that: have vacuum-pumping tube on the said side wall of furnace, the external vacuum pump of said vacuum-pumping tube.
5. according to the said sapphire single-crystal body of claim 1 Czochralski grown device, it is characterized in that: said body of heater is provided with nitrogen and adds mouth.
6. according to the said sapphire single-crystal body of claim 1 Czochralski grown device, it is characterized in that: have observation port on the said side wall of furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220066242 CN202492613U (en) | 2012-02-28 | 2012-02-28 | Czochralski growing method for sapphire single crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220066242 CN202492613U (en) | 2012-02-28 | 2012-02-28 | Czochralski growing method for sapphire single crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202492613U true CN202492613U (en) | 2012-10-17 |
Family
ID=46998849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220066242 Expired - Fee Related CN202492613U (en) | 2012-02-28 | 2012-02-28 | Czochralski growing method for sapphire single crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202492613U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103014837A (en) * | 2012-12-26 | 2013-04-03 | 江苏华盛天龙光电设备股份有限公司 | Secondary charging method for single crystal furnace |
-
2012
- 2012-02-28 CN CN 201220066242 patent/CN202492613U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103014837A (en) * | 2012-12-26 | 2013-04-03 | 江苏华盛天龙光电设备股份有限公司 | Secondary charging method for single crystal furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121017 Termination date: 20150228 |
|
| EXPY | Termination of patent right or utility model |