CN203159740U - Growth device for growing multiple crystals by adopting guided mode method - Google Patents
Growth device for growing multiple crystals by adopting guided mode method Download PDFInfo
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- CN203159740U CN203159740U CN 201320068936 CN201320068936U CN203159740U CN 203159740 U CN203159740 U CN 203159740U CN 201320068936 CN201320068936 CN 201320068936 CN 201320068936 U CN201320068936 U CN 201320068936U CN 203159740 U CN203159740 U CN 203159740U
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Abstract
The utility model relates to a growth device for growing multiple crystals by adopting a guided mode method. The growth device comprises a single-crystal growth furnace, wherein the furnace cavity of the single-crystal growth furnace is connected with a vacuumizing device; a crucible bracket is arranged at the bottom of the furnace chamber of the single-crystal growth furnace; the crucible bracket is provided with a crucible; the outer side of the crucible is provided with a peripheral heat-preservation cylinder; an upper heat-preservation cover is arranged at the top of the peripheral heat-preservation cylinder, and a lower heat-preservation cover is arranged at the bottom of the peripheral heat-preservation cylinder; a cylinder-shaped high-temperature environment heat supply body is arranged between the crucible and the peripheral heat-preservation cylinder; the upper heat-preservation cover is provided with an upper growth gradient heat supply body; and the lower heat-preservation cover is provided with a lower growth gradient heat supply body. The growth device is characterized in that the crucible is internally fixedly provided with multiple moulds; and the upper side of each mould is provided with a rotating pull rod which can stretch and contract up and down. The growth device for growing multiple crystals by adopting the guided mode method, which is disclosed by the utility model, can realize the simultaneous and independent control of the growth of multiple crystals, substitute for the conventional guided mode method single-wafer growth mode and increase the production efficiency.
Description
Technical field
The utility model relates to a kind of growing apparatus of crystal, the growing apparatus of many crystal of especially a kind of guided mode method growth.
Background technology
The guided mode method is one of method of manually producing from melt monocrystal material, and namely " edge limited film feed growth " technology is called for short the EFG method, the crystal of the specified shape that is mainly used in growing, and in fact it is a kind of distortion of crystal pulling method.The guided mode method is because the crystal such as slice, silk, pipe, rod, plate of directly growing from melt, and crystalline growth velocity is fast, size can accurately be controlled, simplified the work program of crystal greatly, material, time and resource have been saved, reduce production costs, increase economic efficiency, thereby be subject to people's attention.
The principle of work of guided mode method is that raw material is put into the crucible heating and melting, melt rises to die tip along a mould under wicking action, connect seed crystal at the mould top liquid level and lift melt, make on the interface of seed crystal and melt and constantly carry out rearranging of atom or molecule, solidify gradually and grow the single crystal identical with the die edge shape with cooling.
The speed of growth is one of principal element that influences EFG method crystal mass, if the speed of growth is too high, it is cellular that growth interface can become, and has a large amount of pores or cavity in the crystal, and dislocation desity also will increase.In many crystal of reality growth, simultaneously multi-mould is carried out the seeding growth by a seed crystal, often because poor synchronization, and cause the crystal orientation of each bar crystal to differ, radial symmetry gradient is inhomogeneous, cause the high even formation crystal boundary of crystal dislocation density, and have big stress, crystal mass is very undesirable.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of growing apparatus of simple and reliable, many crystal of guided mode method that controllability is strong growth is provided.
The technical scheme that provides according to the utility model, the growing apparatus of many crystal of a kind of guided mode method growth, comprise monocrystal growing furnace, the furnace chamber of monocrystal growing furnace is connected with vacuum extractor, the furnace chamber bottom of monocrystal growing furnace is provided with the crucible bracket, on the crucible bracket crucible is set, heat-preservation cylinder around the outside of crucible is provided with, the top of heat-preservation cylinder is provided with stay-warm case all around, the bottom of heat-preservation cylinder is provided with down stay-warm case all around, crucible and all around heat-preservation cylinder between be provided with the tubular hot environment heating element be provided, be provided with growth gradient at last stay-warm case heating element be provided, being provided with down at stay-warm case down, growth gradient provides heating element; It is characterized in that: in described crucible internal fixation many group moulds are installed, every group of mould upside is equipped with the lifting rod that can stretch and rotate up and down.
Described tubular hot environment provides heating element, go up growth gradient provide heating element, down growth gradient provide heating element all with the coaxial setting of crucible.
Described lifting rod is provided with seed crystal.
Described lifting rod is connected with control device.
The described growth gradient of going up provides heating element and following growth gradient to provide heating element to lay respectively at the upper and lower of crucible.
The growing apparatus of many crystal of guided mode method growth described in the utility model is in crystal growth and operation, control when can realize many crystal growths and independently, both replace conventional guided mode method monolithic growth and simultaneously multi-mould had been carried out the growth pattern of seeding by a seed crystal, improved production efficiency, guaranteed the synchronism of guided mode fado bar crystal growth again, improve crystal mass, reduced energy consumption, saved cost.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with concrete accompanying drawing.
As shown in Figure 1: the growing apparatus of many crystal of described guided mode method growth comprise monocrystal growing furnace 1, vacuum extractor 2, crucible bracket 3, crucible 4, all around heat-preservation cylinder 5, go up stay-warm case 6, stay-warm case 7, tubular hot environment provide heating element 8, go up that growth gradient provides heating element 9, growth gradient provides heating element 10, mould 11, lifting rod 12, control device 13 etc. down down.
As shown in Figure 1, the utility model comprises monocrystal growing furnace 1, the furnace chamber of monocrystal growing furnace 1 is connected with vacuum extractor 2, the furnace chamber bottom of monocrystal growing furnace 1 is provided with crucible bracket 3, crucible 4 is set on the crucible bracket 3, heat-preservation cylinder 5 around the outside of crucible 4 is provided with, the top of heat-preservation cylinder 5 arranges stay-warm case 6 all around, the bottom of heat-preservation cylinder 5 arranges down stay-warm case 7 all around, crucible 4 and all around heat-preservation cylinder 5 between the tubular hot environment is set heating element 8 is provided, be provided with growth gradient at last stay-warm case 6 heating element 9 is provided, growth gradient provides heating element 10 under stay-warm case 7 is provided with down, and last growth gradient provides heating element 9 and following growth gradient to provide heating element 10 to lay respectively at the upper and lower of crucible 4; In described crucible 4 internal fixation many group moulds 11 are installed, every group of mould 11 upsides are provided with the lifting rod 12 that can stretch up and down and rotate, and the bottom of lifting rod 12 is provided with seed crystal; Described lifting rod 12 is connected with control device 13, and control device 13 is used for each lifting rod 12 of control and lifts up and down independently respectively and spinning movement;
Described tubular hot environment provides heating element 8, go up growth gradient provide heating element 9, down growth gradient provide heating element 10 all with crucible 4 coaxial settings;
Described vacuum extractor 2 is vacuum pump etc., can carry out vacuumizing device to the furnace chamber of monocrystal growing furnace 1.
Principle of work of the present utility model and working process: as shown in Figure 1, in crystal growth and operation, described control device 13 can be controlled lifting rod 12 at the same time or separately, controls when can realize many crystal growths and independently, guarantees the synchronism of many crystal growths.
Claims (5)
1. the growing apparatus of many crystal of guided mode method growth, comprise monocrystal growing furnace (1), the furnace chamber of monocrystal growing furnace (1) is connected with vacuum extractor (2), the furnace chamber bottom of monocrystal growing furnace (1) is provided with crucible bracket (3), crucible (4) is set on the crucible bracket (3), heat-preservation cylinder (5) around the outside of crucible (4) is provided with, the top of heat-preservation cylinder (5) is provided with stay-warm case (6) all around, the bottom of heat-preservation cylinder (5) is provided with down stay-warm case (7) all around, crucible (4) and all around heat-preservation cylinder (5) between be provided with the tubular hot environment heating element (8) be provided, be provided with growth gradient at last stay-warm case (6) heating element (9) is provided, growth gradient provides heating element (10) under stay-warm case (7) is provided with down; It is characterized in that: in described crucible (4) internal fixation many group moulds (11) are installed, every group of mould (11) upside is equipped with the lifting rod (12) that can stretch up and down and rotate.
2. the growing apparatus of many crystal of guided mode method as claimed in claim 1 growth is characterized in that: described tubular hot environment provides heating element (8), go up growth gradient provide heating element (9), down growth gradient provide heating element (10) all with the coaxial setting of crucible (4).
3. the growing apparatus of many crystal of guided mode method as claimed in claim 1 growth, it is characterized in that: described lifting rod (12) is provided with seed crystal.
4. the growing apparatus of many crystal of guided mode method as claimed in claim 1 growth, it is characterized in that: described lifting rod (12) is connected with control device (13).
5. the growing apparatus of many crystal of guided mode method as claimed in claim 1 growth, it is characterized in that: the described growth gradient of going up provides heating element (9) and following growth gradient to provide heating element (10) to lay respectively at the upper and lower of crucible (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320068936 CN203159740U (en) | 2013-02-05 | 2013-02-05 | Growth device for growing multiple crystals by adopting guided mode method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320068936 CN203159740U (en) | 2013-02-05 | 2013-02-05 | Growth device for growing multiple crystals by adopting guided mode method |
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| Publication Number | Publication Date |
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| CN203159740U true CN203159740U (en) | 2013-08-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201320068936 Expired - Fee Related CN203159740U (en) | 2013-02-05 | 2013-02-05 | Growth device for growing multiple crystals by adopting guided mode method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106498488A (en) * | 2016-10-28 | 2017-03-15 | 同济大学 | Multiple doping CaF are grown simultaneously2The device of crystal and the preparation method based on the device |
| CN110904500A (en) * | 2019-11-04 | 2020-03-24 | 南京同溧晶体材料研究院有限公司 | Sapphire crystal growth furnace with replaceable seed crystal for multiple times and adopting film guide method |
| CN110923815A (en) * | 2019-11-04 | 2020-03-27 | 南京同溧晶体材料研究院有限公司 | Film-guiding sapphire crystal growth furnace based on seed crystal replacement scheme |
| WO2022052080A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Edge-defined film-fed growth method-based sapphire crystal growth furnace capable of replacing seed crystals for multiple times |
-
2013
- 2013-02-05 CN CN 201320068936 patent/CN203159740U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106498488A (en) * | 2016-10-28 | 2017-03-15 | 同济大学 | Multiple doping CaF are grown simultaneously2The device of crystal and the preparation method based on the device |
| CN106498488B (en) * | 2016-10-28 | 2019-04-02 | 同济大学 | A variety of doping CaF are grown simultaneously2The device of crystal and preparation method based on the device |
| CN110904500A (en) * | 2019-11-04 | 2020-03-24 | 南京同溧晶体材料研究院有限公司 | Sapphire crystal growth furnace with replaceable seed crystal for multiple times and adopting film guide method |
| CN110923815A (en) * | 2019-11-04 | 2020-03-27 | 南京同溧晶体材料研究院有限公司 | Film-guiding sapphire crystal growth furnace based on seed crystal replacement scheme |
| CN110923815B (en) * | 2019-11-04 | 2021-06-15 | 南京同溧晶体材料研究院有限公司 | Film-guiding sapphire crystal growth furnace based on seed crystal replacement scheme |
| CN110904500B (en) * | 2019-11-04 | 2021-09-28 | 南京同溧晶体材料研究院有限公司 | Sapphire crystal growth furnace with replaceable seed crystal for multiple times and adopting film guide method |
| WO2022052080A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Edge-defined film-fed growth method-based sapphire crystal growth furnace capable of replacing seed crystals for multiple times |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130828 Termination date: 20220205 |