CN203653759U - Furnace body cooling system of sapphire single crystal growth furnace - Google Patents
Furnace body cooling system of sapphire single crystal growth furnace Download PDFInfo
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- CN203653759U CN203653759U CN201320861646.XU CN201320861646U CN203653759U CN 203653759 U CN203653759 U CN 203653759U CN 201320861646 U CN201320861646 U CN 201320861646U CN 203653759 U CN203653759 U CN 203653759U
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- water
- furnace body
- furnace
- cooling system
- sapphire single
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- 239000013078 crystal Substances 0.000 title claims abstract description 35
- 238000001816 cooling Methods 0.000 title claims abstract description 23
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 23
- 239000010980 sapphire Substances 0.000 title claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 208000002925 dental caries Diseases 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000638 solvent extraction Methods 0.000 abstract 3
- 238000009828 non-uniform distribution Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000012797 qualification Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a furnace body cooling system of a sapphire single crystal growth furnace. The furnace body cooling system comprises a furnace body and a hearth, wherein a furnace lid I and a furnace lid II are arranged at the upper part of the furnace body, the furnace body is uniformly separated into at least four cavities by a partitioning plate I, each cavity is provided with a water inlet I and a water outlet I, the furnace lid I is internally separated into two parts by a partitioning plate II, a water inlet II and a water outlet II are formed in two sides of the partitioning plate II, the furnace lid II is hollow, the furnace lid II is provided with a water inlet III and a water outlet III, and the furnace lid II is provided with an observation hole I and an observation hole II. The furnace body cooling system is simple in structure, and is convenient and practical; according to the furnace body cooling system, a thermal field is controlled through adjusting a flow velocity of cooling circulating water at the water inlets and the water outlets, sot that sapphire single crystals are prevented from sticking on a pot due to non-uniform distribution of the thermal field, sapphire single crystals with high quality are grown, the yield of the crystals is increased, and the production cost is reduced.
Description
Technical field
The utility model relates to a kind of cooling system, is specifically related to a kind of growth furnace body of heater cooling system of growing high-quality sapphire single-crystal.
Background technology
Cooling circulating water system at present traditional sapphire single crystal growth furnace body of heater is all the cooling recirculation system of a set of entirety, and whole body of heater lower end arranges a water-in, and upper end arranges a water outlet.In the process of Sapphire Crystal Growth, in body of heater, the temperature field of all directions is wayward like this, cause warm field distribution inhomogeneous, the temperature of possible certain direction is low, and other direction temperature is relatively moderate, so just especially easily there is the phenomenon of the sticky pot of sapphire single-crystal, thereby make the sapphire single-crystal inside of growth have a large amount of bubbles, even can cause the cracking of crystal, cause the qualification rate of crystal to reduce, cost significantly increases.
Summary of the invention
For the deficiencies in the prior art, the utility model provides a kind of simple in structure, convenient and practical sapphire single crystal growth furnace body of heater cooling system, has solved the sticky pot of the sapphire single-crystal phenomenon that existing sapphire single crystal growth furnace body of heater cooling system evenly occurs due to warm field distribution.
Concrete technical scheme of the present utility model is: a kind of sapphire single crystal growth furnace body of heater cooling system, comprise body of heater and burner hearth, the bell II that described upper of furnace body is provided with bell I and matches with bell I, described body of heater is evenly divided at least four cavitys by dividing plate I, the lower end of each cavity is provided with a water-in I, and upper end arranges a water outlet I; Described bell I inner route clapboard II is divided into two portions, and described dividing plate II both sides are provided with water-in II and water outlet II.
Described dividing plate I and dividing plate II are made by lagging material, can make like this water temperature in each cavity be independent of each other mutually, thereby regulate the flow velocity of the water of each cavity import and export according to a temperature situation of liquid stream in burner hearth.
Described bell II is hollow, is provided with water-in III and water outlet III in described bell II.
In described bell II, be provided with porthole I and porthole II, so that the temperature situation that liquid flows in different directions is observed burner hearth.
In described burner hearth, be placed with crucible, the material of heating in the crucible of brilliant like this material in burner hearth, to be heated to after melting, make the stable physical property such as surface tension, density and viscosity of melt through body of heater cooling system, be beneficial to the crystal of growing high-quality.
Adopt such structure, staff observes the flow direction of liquid stream in body of heater by porthole I and porthole II, just can learn the situation of temperature field in body of heater, then by regulating water-in I and water outlet I in four cavitys, water-in II and water outlet II in bell I, in bell II, the flow velocity of the cooling circulating water at water-in III and water outlet III place regulates and controls temperature, after temperature is stablized, lower seed crystal, control the growth of crystal, so just avoid the sticky pot of the sapphire single-crystal phenomenon of the inhomogeneous appearance of warm field distribution, thereby grow high-quality sapphire single-crystal, improve the qualification rate of crystal, reduce production cost.
The utility model is simple in structure, convenient and practical, regulate and control temperature by the flow velocity that regulates the cooling circulating water of water-in III and water outlet III place in water-in II and water outlet II in water-in I and water outlet I in four cavitys, bell I, bell II, avoid the sticky pot of the sapphire single-crystal phenomenon of the inhomogeneous appearance of warm field distribution, thereby grow high-quality sapphire single-crystal, the qualification rate that has improved crystal, has reduced production cost.
Accompanying drawing explanation
Fig. 1 is front view of the present utility model;
Fig. 2 is the A-A sectional view of Fig. 1;
Fig. 3 is the vertical view of bell I in Fig. 1;
Fig. 4 is the vertical view of bell II in Fig. 1.
In figure, 1 is water outlet I, the 2nd, and body of heater, the 3rd, water-in I, the 4th, bell I, the 5th, bell II, the 6th, porthole I, the 7th, porthole II, the 8th, burner hearth, the 9th, cavity, the 10th, dividing plate II, the 11st, water-in II, the 12nd, water outlet II, the 13rd, water-in III, the 14th, water outlet III, the 15th, dividing plate I.
Embodiment
A kind of sapphire single crystal growth furnace body of heater cooling system, comprise body of heater 2 and burner hearth 8, the bell II 5 that described body of heater 2 tops are provided with bell I 4 and match with bell I 4, described body of heater 2 is evenly divided at least four cavitys 9 by dividing plate I 15, the lower end of each cavity 9 is provided with a water-in I 3, and upper end arranges a water outlet I 1; Described bell I 4 inner route clapboard II 10 are divided into two portions, and described dividing plate II 10 both sides are provided with water-in II 11 and water outlet II 12.
Described dividing plate I 15 and dividing plate II 10 are made by lagging material, can make like this water temperature in each cavity 9 be independent of each other mutually, thereby regulate the flow velocity of the water that each cavity 9 imports and exports according to a temperature situation of liquid stream in burner hearth.
Described bell II 5 is hollow, is provided with water-in III 13 and water outlet III 14 in described bell II 5.
In described bell II 5, be provided with porthole I 6 and porthole II 7, so that observe a temperature situation of the interior liquid stream of burner hearth 8 in different directions.
In described burner hearth 8, be placed with crucible, the material of heating in the crucible of brilliant like this material in burner hearth 8, to be heated to after melting, make the stable physical property such as surface tension, density and viscosity of melt through the cooling system of body of heater 2, be beneficial to the crystal of growing high-quality.
Adopt such structure, staff observes the flow direction of the interior liquid stream of body of heater 2 by porthole I 6 and porthole II 7, just can learn the situation of the interior temperature of body of heater 2 field, then by regulating four interior water-in I 3 of cavity 9 and water outlet I 1, water-in II 11 and water outlet II 12 in bell I 4, in bell II 5, the flow velocity of the cooling circulating water at water-in III 13 and water outlet III 14 places regulates and controls temperature, after temperature is stablized, lower seed crystal, control the growth of crystal, so just avoid the sticky pot of the sapphire single-crystal phenomenon of the inhomogeneous appearance of warm field distribution, thereby grow high-quality sapphire single-crystal, improve the qualification rate of crystal, reduce production cost.
Claims (3)
1. a sapphire single crystal growth furnace body of heater cooling system, comprise body of heater (2) and burner hearth (8), it is characterized in that: the bell II (5) that described body of heater (2) top is provided with bell I (4) and matches with bell I (4), described body of heater (2) is evenly divided at least four cavitys (9) by dividing plate I (15), the lower end of each cavity (9) is provided with a water-in I (3), and upper end arranges a water outlet I (1); Described bell I (4) inner route clapboard II (10) is divided into two portions, and described dividing plate II (10) both sides are provided with water-in II (11) and water outlet II (12).
2. sapphire single crystal growth furnace body of heater cooling system according to claim 1, is characterized in that: described bell II (5) is hollow, is provided with water-in III (13) and water outlet III (14) in described bell II (5).
3. sapphire single crystal growth furnace body of heater cooling system according to claim 1, is characterized in that: in described bell II (5), be provided with porthole I (6) and porthole II (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320861646.XU CN203653759U (en) | 2013-12-25 | 2013-12-25 | Furnace body cooling system of sapphire single crystal growth furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320861646.XU CN203653759U (en) | 2013-12-25 | 2013-12-25 | Furnace body cooling system of sapphire single crystal growth furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203653759U true CN203653759U (en) | 2014-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320861646.XU Expired - Lifetime CN203653759U (en) | 2013-12-25 | 2013-12-25 | Furnace body cooling system of sapphire single crystal growth furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203653759U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104445881A (en) * | 2014-12-16 | 2015-03-25 | 河北省沙河玻璃技术研究院 | Device and method for forming thick plate microcrystalline glass |
| CN114875474A (en) * | 2021-01-21 | 2022-08-09 | 陕西铟杰半导体有限公司 | Protection device for semiconductor material production |
-
2013
- 2013-12-25 CN CN201320861646.XU patent/CN203653759U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104445881A (en) * | 2014-12-16 | 2015-03-25 | 河北省沙河玻璃技术研究院 | Device and method for forming thick plate microcrystalline glass |
| CN114875474A (en) * | 2021-01-21 | 2022-08-09 | 陕西铟杰半导体有限公司 | Protection device for semiconductor material production |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Furnace body cooling system of sapphire single crystal growth furnace Effective date of registration: 20160505 Granted publication date: 20140618 Pledgee: China Everbright Bank Ji'nan branch Pledgor: SICC Co.,Ltd. Registration number: 2016990000354 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20201119 Granted publication date: 20140618 Pledgee: China Everbright Bank Ji'nan branch Pledgor: SICC Co.,Ltd. Registration number: 2016990000354 |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co.,Ltd. Address before: 3-409, Yinhe building, 2008 Xinluo street, Lixia District, Jinan City, Shandong Province Patentee before: SICC Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140618 |