CN205907390U

CN205907390U - Many crucibles liquid phase epitaxy siC crystal bear device

Info

Publication number: CN205907390U
Application number: CN201620626980.0U
Authority: CN
Inventors: 朱灿; 吕宇君; 王晓
Original assignee: SICC Science and Technology Co Ltd
Current assignee: SICC Science and Technology Co Ltd
Priority date: 2016-06-23
Filing date: 2016-06-23
Publication date: 2017-01-25
Anticipated expiration: 2026-06-23

Abstract

The utility model belongs to the technical field of new material processing, the utility model provides a many crucibles liquid phase epitaxy siC crystal bear device, it grows in the melt water at crucible bottom flooding to let the siC seed crystal fix through pining down of graphite rope, can provide relatively stable growing environment for the growth of siC crystal from this, flow through the melt water is easily with C to near the system of partial free supply and partial wages of bottom siC seed crystal, carry out simultaneously the growth of many crucibles again and improve production efficiency, the growing environment unstability that exists has been solved in the solwution method, a series of difficult problems of growth rate low grade.

Description

A kind of bogey of many crucibles liquid phase epitaxy sic crystal

Technical field

This utility model belongs to new material field of crystal processing and in particular to one kind realizes many crucibles liquid phase epitaxy sic crystalline substance The bogey of body method.

Background technology

Carborundum (sic) has bigger band gap compared with silicon (si), and the former possesses more excellent physical property.As The new generation of semiconductor material gradually rising, the manufacture method of high-quality sic monocrystalline causes this skilled person more next More concerns.The method of growth sic monocrystalline is broadly divided into vapor phase method and liquid phase method at present.Compared with vapor phase method, liquid phase method The speed of growth is low, but produces high-quality sic monocrystalline for pursuit, and this method is worthy to be popularized.Liquid phase method has relatively High polytype controllability simultaneously can efficiently reduce the crystal defects such as micro-pipe, fault, can obtain the good high-quality sic of crystallinity Monocrystalline.It is a kind of method being conducive to and generating bulk high-purity sic monocrystalline, and avoids growth gained crystal in vapor phase method The FAQs such as the micro-pipe existing and fault.Therefore, the brainstrust in this field has been carried out multinomial research (see Japan in recent years Open 2000-264790 (the jp-a-2000- of patent application publication 2004-2173 (jp-a-2004-2173), Japanese patent application 264790), the open 2007-76986 (jp-a-2007-76986) of Japanese patent application), attempt utilizing rheotaxial growth sic The method of crystal is improving growth rate.

In typical liquid phase method, it is that the si in graphite crucible is reached by molten condition by heating, this melting si exists Thermograde, declines to surface temperature inside melting si, keeps the temperature ladder to melting si surface cooling inside melting si Degree.C in graphite crucible melts in crucible bottom high-temperature area and is dissolved in si fused solution, subsequently mainly by si fused solution C fused solution is risen the low-temperature space reaching si fused solution near surface by convection action, so that c fused solution mistake in low-temperature space Saturation.The sic seed crystal being fixed on graphite rod end is held close on fused solution surface by the stretching of graphite rod, in this phase Between, oversaturated c passes through in sic seed crystal Epitaxial growth, thus obtains sic monocrystalline.

But following situation can be had according to the liquid phase method of this quasi-tradition: on the aufwuchsplate of sic crystal often relatively Easily produce hillock.If generation hillock, monocrystalline can be grown individually by hillock, thus leading to polycrystallization.Even if Slight growth conditionss are had to change, such as in the fused solution at crystal growing surface, the slight change of c concentration and temperature can cause The polycrystallization of multiple independent growth hills, hinders to be formed and has the homogeneous single crystal of flat growth surface, exists and is difficult to stable remain flat The problem in smooth crystalline growth face.Liquid phase method is thermal balance process, is easier in theory to control growth conditionss compared with sublimed method, But in order to solve flat this problem of crystalline growth face of stable maintenance it is necessary to strictly control very much the convection current of fused solution, temperature The parameters such as degree gradient, bring great difficulty to concrete operations.

Content of the invention

The deficiency being existed according to prior art and blank, of the present utility model inventor provide outside a kind of many crucibles liquid phase Prolong the bogey of sic crystal, by graphite rope pin down allow sic seed crystal be fixed on crucible bottom be immersed in fused solution raw Long, provide metastable growing environment thus can to the growth of sic crystal, by the flowing of fused solution be easy to by c to Partly supply near the sic seed crystal of bottom, carry out many crucible growth improve production efficiencies simultaneously again, solve present in solwution method Growing environment is unstable, a series of low difficult problems of growth rate.

Concrete technical scheme of the present utility model is as follows:

A kind of bogey of many crucibles liquid phase epitaxy sic crystal, this bogey structure is as follows:

Including cavity, in described cavity, it is provided with several crucibles, outside described crucible bottom, be connected with graphite rope, described Crucible bottom be connected with sic seed crystal；Described crucible is graphite crucible；

The method realizing many crucibles liquid phase epitaxy sic crystal using this bogey, concretely comprises the following steps:

Sic seed crystal is fixed on crucible bottom, and si raw material is placed in crucible, afterwards crucible is uniformly placed on cavity Interior, and the graphite rope that each crucible bottom is connected flocks together and is placed in outside cavity, airtight cavity afterwards, and cavity is placed in In conventional crystalline grower in conventional liquid phase method, according to the method adjusting parameter of existing rheotaxial growth sic crystal；

After sic crystal growth terminates, pull graphite rope, so that every crucible is inverted, sic crystal is inverted to top thus reality Now separate with fused solution.

During the general crucible quantity in determination, can be adjusted according to producing needs, guarantee that adjacent crucible is anti-in the later stage simultaneously Will not influence each other when turning and be defined；Simultaneously described crucible so may insure its later stage along chamber outer wall surrounding around setting It is heated evenly.Why select graphite rope simultaneously, be because it is elementary composition by single c, other miscellaneous elements will not be introduced, with Shi Shimo is resistant to high temperature in itself it can be ensured that not rupturing in process of production.

In order to reach more preferable effect, cavity bottom can be provided with rotating shaft, by this rotating shaft, whole cavity can be in crystal Rotated in course of reaction, by this rotation, the rotation of within the chamber crucible can be driven, and can be according to the needs of crystal growth To carry out acceleration or deceleration, to be flowed with rotation from the fused solution in this crucible it is easy to will to melt c attached to bottom sic seed crystal Nearly supply.

In sum, inventor provide a kind of bogey of many crucibles liquid phase epitaxy sic crystal, by graphite rope Pin down and allow sic seed crystal be fixed on crucible bottom to be immersed in fused solution growth, provide phase thus can to the growth of sic crystal To stable growing environment, it is easy to partly supply c near the sic seed crystal of bottom by the flowing of fused solution, carry out simultaneously again Many crucibles grow improve production efficiencies, solve that growing environment present in solwution method is unstable, growth rate is low a series of A difficult problem.

Brief description

Fig. 1 is the bogey structural representation of many crucibles described in the utility model；

Fig. 2 is the structure sectional view of a-a in Fig. 1；

Fig. 3 is the structural representation of the adopted crucible of this utility model；

In figure 1 is cavity, and 2 is crucible, and 3 is graphite rope, and 4 is sic seed crystal.

Specific embodiment

A kind of bogey of many crucibles liquid phase epitaxy sic crystal, the bogey structure of this many crucible is as follows:

Including cavity 1, in described cavity 1, it is provided with several crucibles 2, described crucible 2 bottom outside is connected with graphite rope 3, described crucible 2 bottom is connected with sic seed crystal 4；Described crucible 2 is graphite crucible；Described crucible 2 is along cavity 1 outer wall four Chow ring is around setting；In present embodiment, the number of crucible 2 is 6.

Claims

1. a kind of bogey of many crucibles liquid phase epitaxy sic crystal it is characterised in that: concrete structure is as follows:

Including cavity (1), in described cavity (1), it is provided with least two crucibles (2), described crucible (2) bottom outside is connected with Graphite rope (3), described crucible (2) bottom is connected with sic seed crystal (4), and described crucible is graphite crucible.

2. bogey according to claim 1 it is characterised in that: described cavity (1) bottom is provided with rotating shaft.

3. bogey according to claim 1 it is characterised in that: described crucible (2) is along cavity (1) outer wall four chow ring Around setting.