CN208949444U - A kind of growth apparatus of c to sapphire crystal - Google Patents
A kind of growth apparatus of c to sapphire crystal Download PDFInfo
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- CN208949444U CN208949444U CN201821560721.8U CN201821560721U CN208949444U CN 208949444 U CN208949444 U CN 208949444U CN 201821560721 U CN201821560721 U CN 201821560721U CN 208949444 U CN208949444 U CN 208949444U
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Abstract
The utility model provides a kind of growth apparatus of c to sapphire crystal, it includes furnace body, crucible, crucible cover, bell, seed rod, heater, insulation construction, two-layer top electrode and double bottom electrode, crucible cover is that the concentric molybdenum annulus of different inner diameters passes through molybdenum screw rod connection superposition composition, concentric molybdenum annulus proportional spacing setting, and the structure matching with crucible, seed rod is arranged on crucible top, insulation construction includes lateral reflection screen, side thermal insulation layer, top thermal insulation layer and bottom thermal insulation layer, lateral reflection screen is arranged on the outside of crucible, side thermal insulation layer is arranged on the outside of lateral reflection screen, top thermal insulation layer is arranged above crucible cover, bottom thermal insulation layer is arranged in double bottom base part；Heater includes the double-deck upper heater and the double-deck lower calandria, is respectively connected in furnace in two-layer top electrode and double bottom electrode, and heater and the double-deck lower calandria convergence part are divided into triangular structure of right angle on bilayer, and do not contact.The double-deck segmented heater up and down of the utility model setting, by regulation heating power ratio, can effectively, Quick temperature adjustment gradient, guarantee reasonable temperature gradient.
Description
Technical field
The utility model relates to sapphire crystal growth field, and in particular to a kind of growth apparatus of c to sapphire crystal.
Background technique
Sapphire is α-Al2O3Monocrystalline, hexagonal lattice structure are a kind of simple corrdination type oxide crystals.Due to sapphire
Characteristics, the sapphire crystals such as crystalline insulator, dielectric constant stabilization have excellent optical property, physical property and stable chemistry
Performance is widely used in substrate material and the fields such as light emitting diode (LED) illumination, various optical components, window material.
Currently, sapphire crystal mainly uses melt method for growing, including under molten flame method, czochralski method, EFG technique, crucible
Drop method, heat-exchanging method, kyropoulos etc..Wherein, have that growth rate is fast, pure crystalline using kyropoulos growth backboard gem crystal
The features such as property is good, is widely used in LED substrate and various optical application markets.The LED substrate used in the market is c to indigo plant
The problems such as jewel chip covers stick to crystal on side face by a and is processed into, and it is low that there are volume recoveries, and utilization rate of crystal is small.Directly grow
C can effectively improve stock utilization, further reduce the cost to sapphire crystal.But directly growth c is deposited to sapphire crystal
In dislocation density height, the problems such as stress is big.
Summary of the invention
C cannot be grown to sapphire by being able to solve kyropoulos the technical problem to be solved by the utility model is to provide one kind
The problem of crystal, realizes that kyropoulos growing large-size (120kg or more), high quality c are brilliant to the c of sapphire crystal to sapphire
The growth apparatus of body.
Purpose of the utility model is realized as follows: it includes furnace body, crucible, crucible cover, bell, seed rod, bilayer
Top electrodes, double bottom electrode, heater and insulation construction；Crucible cover is that the concentric molybdenum annulus of different inner diameters passes through molybdenum screw rod
Connection superposition composition, concentric molybdenum annulus proportional spacing setting, and the structure matching with crucible, seed rod are arranged on crucible top,
Insulation construction includes lateral reflection screen, side thermal insulation layer, top thermal insulation layer and bottom thermal insulation layer, and lateral reflection screen is arranged on the outside of crucible,
Side thermal insulation layer is arranged on the outside of lateral reflection screen, and top thermal insulation layer is arranged above crucible cover, and bottom thermal insulation layer is arranged in double bottom
Portion's base part；Heater includes the double-deck upper heater and the double-deck lower calandria, is respectively connected to two-layer roof electricity in furnace
On pole and double bottom electrode, heater and the double-deck lower calandria convergence part are divided into triangular structure of right angle on bilayer, and do not connect
Touching.
There are also features some in this way for the utility model:
1. the material of furnace body is hollow 304 stainless steel, in crystal growing process, it is passed through recirculated cooling water；
2. the upper heater of bilayer and the double-deck lower calandria are interior outer double-layer structure, the distance between internal layer and outer layer for 5 ~
15cm, heater spacing are 5 ~ 10cm；Heater and the double-deck lower calandria heater are made of tungsten bar on bilayer, tungsten bar diameter
Range is 4mm ~ 10mm；On bilayer heater bottom be triangular structure of right angle, both ends connection setting stove top diameter not
The two-layer top electrode of same annular；It is triangular structure of right angle at the top of the lower heater of bilayer, is connected the double-deck upper heater and not
The double bottom electrode of the different annular of furnace bottom diameter is arranged in contact, the lower heater both ends connection of bilayer；
3. lateral reflection screen is that thick range is 1 ~ 3mm molybdenum plate, side thermal insulation layer is fixed on by molybdenum nail；
4. top thermal insulation layer and bottom thermal insulation layer are multilayer molybdenum plate, with a thickness of 1 ~ 3mm, quantity is 20 ~ 35；Side thermal insulation layer
For multilayer molybdenum cylinder, the heat-barrier materials such as alumina brick, zirconia brick, alumina hollow ball are can be filled in molybdenum cylinder gap.
The beneficial effects of the utility model have:
1. the double-deck segmented heater up and down of the utility model setting can effectively, fastly by regulation heating power ratio
Velocity modulation section temperature gradient, guarantees reasonable temperature gradient.
2. compare single layer heater, can be shortened the feedback time of temperature gradient, to effectively contract using the double-deck heater
Short crystal growth technique duration.
3. being to be formed and stablized between 0.5 ~ 1.5 by the power ratio for adjusting the double-deck upper heater and the double-deck lower heater
Temperature gradient from suitable large scale (120kg or more) c to sapphire crystal growth.Power regulating range is respectively 5 ~ 50kw
With 10 ~ 70kw.
Detailed description of the invention
FIG. 1 is a schematic structural view of the utility model.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and embodiments.
In conjunction with Fig. 1, the present embodiment includes furnace body 1, crucible 2, crucible cover 3, bell 4, seed rod 5, top electrodes 6, bottom
Heater 8 on electrode 7, bilayer, the double-deck lower heater 9, lateral reflection screen 10, side thermal insulation layer 11, top thermal insulation layer 12 and bottom every
Thermosphere 13.Crucible cover is that the concentric molybdenum annulus of different inner diameters is formed by stacking by the connection of molybdenum screw rod, adjusts toroid size and annulus
Spacing can in regulating stove crucible top radial thermal field, advantageously form reasonable seeding and shouldering temperature gradient.Concentric molybdenum
Number of rings is 15 ~ 25.Using Segmented heating body above and below bilayer, can effectively, quickly adjust in crystal growing process
Radial and axial temperature gradient, can be effective by controlling upper and lower heater power ratio in the preliminary stage of crystal growth
Adjust melt convection speed；In the crystal growth later period, lower layer's heater heating power is adjusted, reasonable temperature gradient is formed, controlled
The speed of growth in combinations body later period grows high quality c to sapphire crystal, the sapphire grown after tested using the present invention
1000/cm of dislocation density <2。
Furnace body 1 and bell 4 are hollow stainless steel material, are passed through recirculated water in crystal growing process and play cooling effect.
Crucible cover 3 is that the concentric molybdenum annulus of different inner diameters is formed by stacking, it is ensured that the spacing of molybdenum annulus is uniform.The setting of lateral reflection screen 10 exists
2 outside of crucible, and the structure matching with crucible, seed rod 5 are arranged on crucible top.Insulation construction include side thermal insulation layer 11, on
Portion's thermal insulation layer 12 and bottom thermal insulation layer 13.Heater is divided into heater 8 and the double-deck lower calandria 9, upper and lower heater point on bilayer
Lian Jie it not be arranged in furnace in two-layer top electrode 6 and bottom electrode 7, heater 8 and double-deck lower 9 convergence part of calandria on bilayer
It is divided into triangular structure of right angle, and there is no contact upper and lower heater.At crystal growth initial stage, by adjusting bilayer
The power of upper heater and the double-deck lower heater, controls the convection velocity of bath surface, forms reasonable seeding temperature gradient；?
The double-deck upper and lower heater power is slowly reduced during isodiametric growth with identical rate, until crystal growth to half weight
Afterwards, the rate of temperature fall of calandria under bilayer, is adjusted to the half of former rate by the fall off rate for keeping the double-deck upper calandria power,
Until crystal growth is completed.The rate of pulling in crystal growing process is 0.5 ~ 5mm/h.Sapphire is processed into chip, surface
It is machined to 0.5 ~ 1nm of roughness, in 350 ~ 400 DEG C of KOH solution corrosion, as a result 1000/cm of surface dislocation density <2, full
Sufficient professional standard.
The above content is the further descriptions done in conjunction with specific preferred embodiment to the utility model, cannot
Assert that the specific implementation of the utility model is only limited to these explanations.For the people with the utility model fields rudimentary knowledge
For member, it can be easy to that the utility model is changed and modified, these change and modification all shall be regarded as belonging to this reality
The scope of patent protection determined with novel submitted claims.
Claims (4)
1. a kind of c is to the growth apparatus of sapphire crystal, it include furnace body, crucible, crucible cover, bell, seed rod, heater and
Insulation construction, it is characterised in that it further includes two-layer top electrode and double bottom electrode, and crucible cover is the concentric of different inner diameters
Molybdenum annulus passes through molybdenum screw rod connection superposition composition, concentric molybdenum annulus proportional spacing setting, and the structure matching with crucible, seed rod
It is arranged on crucible top, insulation construction includes lateral reflection screen, side thermal insulation layer, top thermal insulation layer and bottom thermal insulation layer, lateral reflection screen
It is arranged on the outside of crucible, side thermal insulation layer is arranged on the outside of lateral reflection screen, and top thermal insulation layer is arranged above crucible cover, bottom thermal insulation
Layer is arranged in double bottom base part；Heater includes the double-deck upper heater and the double-deck lower calandria, is respectively connected to
In furnace in two-layer top electrode and double bottom electrode, heater and the double-deck lower calandria convergence part are divided into right angle trigonometry on bilayer
Shape structure, and do not contact.
2. a kind of c according to claim 1 is to the growth apparatus of sapphire crystal, it is characterised in that on bilayer heater and
The lower calandria of bilayer is interior outer double-layer structure, and the distance between internal layer and outer layer are 5 ~ 15cm, and heater spacing is 5 ~ 10cm；It is double
Heater and the double-deck lower calandria heater are made of tungsten bar on layer, and tungsten bar diameter range is 4mm ~ 10mm；It generates heat on bilayer
Body bottom is triangular structure of right angle, and the two-layer top electrode of the different annular of stove top diameter is arranged in both ends connection；It is double
It is triangular structure of right angle at the top of the lower heater of layer, is connected the double-deck upper heater and does not contact, the lower heater both ends connection of bilayer
The double bottom electrode of the different annular of furnace bottom diameter is set.
3. a kind of c according to claim 2 is to the growth apparatus of sapphire crystal, it is characterised in that lateral reflection screen is thick model
It encloses for 1 ~ 3mm molybdenum plate, side thermal insulation layer is fixed on by molybdenum nail.
4. a kind of c according to claim 3 is to the growth apparatus of sapphire crystal, it is characterised in that top thermal insulation layer and bottom
Portion's thermal insulation layer is multilayer molybdenum plate, and with a thickness of 1 ~ 3mm, quantity is 20 ~ 35；Side thermal insulation layer is multilayer molybdenum cylinder, molybdenum cylinder gap filling
Heat-barrier material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821560721.8U CN208949444U (en) | 2018-09-25 | 2018-09-25 | A kind of growth apparatus of c to sapphire crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821560721.8U CN208949444U (en) | 2018-09-25 | 2018-09-25 | A kind of growth apparatus of c to sapphire crystal |
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| Publication Number | Publication Date |
|---|---|
| CN208949444U true CN208949444U (en) | 2019-06-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821560721.8U Active CN208949444U (en) | 2018-09-25 | 2018-09-25 | A kind of growth apparatus of c to sapphire crystal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109306520A (en) * | 2018-11-26 | 2019-02-05 | 国宏中晶集团有限公司 | A kind of kyropoulos growing sapphire crystal device and method |
| CN113106539A (en) * | 2020-06-05 | 2021-07-13 | 眉山博雅新材料有限公司 | Crystal preparation system |
-
2018
- 2018-09-25 CN CN201821560721.8U patent/CN208949444U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109306520A (en) * | 2018-11-26 | 2019-02-05 | 国宏中晶集团有限公司 | A kind of kyropoulos growing sapphire crystal device and method |
| CN113106539A (en) * | 2020-06-05 | 2021-07-13 | 眉山博雅新材料有限公司 | Crystal preparation system |
| US11655557B2 (en) | 2020-06-05 | 2023-05-23 | Meishan Boya Advanced Materials Co., Ltd. | Methods and devices for growing crystals with high uniformity without annealing |
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