CN209194104U - A kind of oval heater for sapphire crystallization - Google Patents
A kind of oval heater for sapphire crystallization Download PDFInfo
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- CN209194104U CN209194104U CN201821762619.6U CN201821762619U CN209194104U CN 209194104 U CN209194104 U CN 209194104U CN 201821762619 U CN201821762619 U CN 201821762619U CN 209194104 U CN209194104 U CN 209194104U
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Abstract
This application provides a kind of oval heaters for sapphire crystallization, the heater includes heater body (1), positive electrode (2) and negative electrode (3), wherein, the heater body (1) is the cylinder that cross section is ellipse, upper slot (11) are opened up to the bottom surface of heater body along its bus from the top surface of the heater body (1), lower slot (12) are opened up to the top surface of heater body along its bus from the bottom surface of the heater body (1), the upper slot (11) is arranged alternately with the lower slot (12), the positive electrode (2) and negative electrode (3) are all set on the heater body (1), to when preparing sapphire crystal using kyropoulos, it can grow to obtain oval sapphire crystal, to improve the utilization rate of sapphire crystal.
Description
Technical field
The invention belongs to the technical fields of Sapphire Crystal Growth, in particular to a kind of to be used for large scale kyropoulos graphite thermal
Heater is used in the sapphire single-crystal furnace of field.
Background technique
Sapphire (α-Al2O3) have the characteristics that high rigidity, high intensity, corrosion-resistant, high light transmission rate, from France in 1890
Since scientist Vinal is prepared for sapphire crystal for the first time, the technology of preparing of synthetic sapphire crystal has obtained quick hair
Exhibition, crystal quality are continuously improved, and application field is also widened significantly.Currently, sapphire is widely used in civilian and military
Etc. every field.In civil field, sapphire is used for abrasion-proof structure, medical material, high temperature window, microelectronic industry substrate material
Material, laser host material, optical prism, mobile phone window etc.；In military field, wave transparent of the sapphire as high-speed aircraft and guided missile
The fields such as optronics mast of window, photoelectric nacelle, submarine.The application field constantly expanded constantly proposes sapphire material newly to want
Ask, except high rigidity, high intensity, it is wear-resistant in addition to, also require sapphire that there are the property such as low stress, high optical perfection, major diameter
Energy.Therefore, growing low cost, large scale, high quality becomes artificial synthesized sapphire trend.
Artificial synthesized sapphire, that is, the method for growing sapphire crystal mainly includes vertical pulling method (cz), heat-exchanging method
(HEM), the terraced method (TGT) of temperature and kyropoulos (Kyropoulos) etc..Wherein, vertical pulling method and the terraced method of temperature are mainly used for growing 100kg
Sapphire crystal below；And heat-exchanging method is easy to cause crystalline substance since molybdenum crucible is different from the thermal expansion coefficient of sapphire single-crystal
Thermal stress is easily generated at body and crucible EDGE CONTACT, and then easily causes cracking outside monocrystalline.Therefore, growing large-size is blue precious at present
Stone mainly uses kyropoulos, and the crystal defect of such method growth is few, dislocation density is low.The tune that this method passes through heater power
Section provides suitable heat in long crystal furnace.Seed crystal is securely fastened on seed rod before growing crystal, is passed through into seed rod
Cooling water passes through seed crystal and liquid level contacts seeding, complete crystal growth so that seed crystal holding lower temperature.Pass through heater power
The temperature gradient for forming upper cold and lower heat in growth furnace is adjusted, Sapphire Crystal Growth is promoted.
With the fast development of the LED technology of Sapphire Substrate, Sapphire Substrate occupies 90% or more of LED substrate market
Share, therefore, demand of the LED substrate market to 6 inches and the above sapphire substrate sheet are increasing.Due to c-plane sapphire crystalline substance
There is the lattice mismatch rate of very little between body and III/V and II/VI compounds of group film (such as GaN film), for example, c-plane sapphire
Lattice mismatch rate between GaN film is only 17%, and therefore, LED field is often raw using c-plane sapphire as GaN film extension
Long layer.Since A Xiang Changjing dislocation can interrupt during long brilliant, and C Xiang Changjing can not with more and more Interfacial Dislocations lines
Disconnected accumulation, crystal dislocation also can be higher and higher, and C Xiang Changjing is easiest to the problem of low angle boundary and big angle crystal boundary occur.To solve
Contradiction in quality and application, sapphire generallys use A Xiang Changjing at present, and A needs as shown in Figure 1 laterally materials to long crystalline substance, thus
It can get higher-quality Sapphire Substrate.
In Sapphire Crystal Growth, the thermal field structure in single crystal growing furnace determines the heat of crystal growth, mass transport item
Part and environment of crystal growth etc., influence of these parameters to sapphire crystal quality are most important.Heater is as Thermal sapphire
Foundation in the architecture of field, the moment affects liquid level radial temperature difference, vertical temperature difference and long brilliant rate, and affects
The growth form of crystal.
The structure of used heater is as shown in Fig. 2, include heater body 001 and electrode slice in existing long crystal furnace
002, cross section is circle, and each position calorific value is consistent, and heater to crucible distance is equal, therefore, the crystal grown
It also is cylinder.Since A need to laterally draw materials to the crystal of growth, and the crystal materials rate of circular configuration is low, leads to increased costs.
By taking 400kg sapphire crystal as an example, draw and take 4 inch wafer sticks, same level, which can be drawn, takes 4 wafer sticks, wafer stick length and
For 1176mm.In contrast, equally it is 400kg sapphire crystal, if the cross section of sapphire crystal is ellipse, is equally
It draws and takes 4 inch wafer sticks, theoretically, same level, which can also be drawn, takes 4 wafer sticks, moreover, wafer stick length and reachable
The stick amount of drawing of 1381mm, year-on-year rod-like crystal increase that 17.43%, 400kg crystal is total can to draw 4 inch wafer stick 1000mm more
More than.In addition, sapphire crystal obtained by being grown using conventional heater is easily caused " big hip " in bottom, crystal utensil is difficult
With backing, crystal hangs out difficulty.
Therefore, it needs to develop a kind of heater that can grow oval sapphire crystal.
Utility model content
The application provides a kind of oval heater for sapphire crystallization, to prepare sapphire using kyropoulos
It when crystal, can grow to obtain oval sapphire crystal, to improve the utilization rate of sapphire crystal.
Heater provided by the present application includes: heater body 1, positive electrode 2 and negative electrode 3, wherein the heater master
Body 1 is the cylinder that cross section is ellipse, is opened from the top surface of the heater body 1 along its bus to the bottom surface of heater body
If upper slot 11, lower slot 12, the upper slot are opened up to the top surface of heater body along its bus from the bottom surface of the heater body 1
11 are arranged alternately with the lower slot 12, and the positive electrode 2 and negative electrode 3 are all set in the heater body 1.
In a kind of achievable mode, the length of the major radius R and short radius r of 1 cross section of heater body it
Range than α is 1.0 < α≤1.2.
In a kind of achievable mode, the width of the upper slot 11 is equal；And/or the depth of the upper slot 11 is homogeneous
Deng and/or the width of the upper slot 11 be the 1/50~2/25 of its depth.
In a kind of achievable mode, the width of the lower slot 12 is equal；And/or the depth of the lower slot 12 is homogeneous
Deng and/or the width of the lower slot 12 be the 1/50~2/25 of its depth.
In a kind of achievable mode, the heater body is divided into heating with adjacent lower slot 12 by the upper slot 11
The width of item 4, all fire-bars 4 is equal；And/or the width of the fire-bar 4 is 5~10 times of 11 width of upper slot；With/
Or the width of the fire-bar 4 is 5~10 times of 12 width of lower slot.
In a kind of achievable mode, the positive electrode 2 and the negative electrode 3 are set to the heater body 1
It is ipsilateral.
In a kind of achievable mode, the positive electrode 2 and the negative electrode 3 are respectively arranged at the heater body
At two endpoints of 1 cross section major radius.
In a kind of achievable mode, the heater is graphite heater.
In a kind of achievable mode, the short radius of the height h of the heater and 1 cross section of heater body
The range of the length ratio β of r is 1.5 < β < 2.5.
The application is by being changed to oval heater for circular shape heater, under the conditions of the identical fever of heater each point,
Distance due to heater apart from crystal is different, so that the crystal heat that different location obtains during the growth process is inconsistent, from
And different transverse temperature gradients is formed in same level, it realizes that the ellipse of crystal grows and then improves crystal and draws stick
Amount, improves the utilization rate of crystal.
Detailed description of the invention
Fig. 1 shows sapphire crystal and draws stick direction schematic diagram；
Fig. 2 shows the top views of conventional heater；
Fig. 3 shows the structural schematic diagram of the heater according to one preferred embodiment of the application；
Fig. 4 shows the top view of heater shown in Fig. 3.
Description of symbols
1- heater body, the upper slot of 11-, slot under 12-, 2- positive electrode, 3- negative electrode, 4- fire-bar.
Specific embodiment
Below in conjunction with the attached drawing of the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
The technical solution of the application described below.
Fig. 3 is the structural schematic diagram according to the heater shown in a kind of preferred embodiment of the application, and Fig. 4 is shown in Fig. 3
The top view of heater.As shown in Figure 3 and Figure 4, heater provided by the present application includes: heater body 1, positive electrode 2 and bears
Electrode 3.
In the present embodiment, the heater body 1 is the penetrating cylinder in both ends, and the cross section of the heater is ellipse
Shape.
In the present embodiment, the range of the length ratio α of the major radius R and short radius r of 1 cross section of heater body
For 1.0 < α≤1.2.Applicants have discovered that heater is easily contacted with crucible after α is greater than 1.2, cause to strike sparks, in addition, heating
Device difficulty of processing can also be increase accordingly.Therefore, the application selects 1.0 < α≤1.2.
In the present embodiment, the length of the height h of the heater and the short radius r of 1 cross section of heater body
The ratio between β range be 1.5 < β < 2.5.Applicants have discovered that crystal optimal aspect ratio be 1.2~1.8, heater continue shorten or
Increase, crucible is also required to shorten or increase therewith, so that the crystal of optimal aspect ratio can not be obtained, will lead to crystal cleavage, gas
The defects of bubble.
The application also found, can generate oval sapphire crystal using heater provided by the present application, with circle indigo plant
Gem crystal is compared, and oval sapphire crystal draws the increase of stick amount, to further increase the utilization rate of crystal.
Upper slot 11 is opened up to the bottom surface of heater body along its bus from the top surface of the heater body 1, also, by institute
The bottom surface for stating heater body 1 opens up lower slot 12, the upper slot 11 and the lower slot to the top surface of heater body along its bus
12 are arranged alternately, so that the heater body 1 forms the continuous galvanic circle of closing, thus, to the heater
After main body 1 is powered, electric heating is formed in the heater body 1, and then heater body 1 is made to generate heat.
In the present embodiment, the width of each upper slot 11 is equal, the deep equality of each upper slot 11, similarly, each lower slot 12
Width is equal, the deep equality of each lower slot 12.Guarantee that heater fever is consistent, due to the calorific value one in each face of oval heater
It causes, but inconsistent to the distance of crystal, crystal is heated also inconsistent, and crystal ellipse can be made to grow.
In a kind of achievable mode, the width of all upper slots 11 is equal, the depth of all upper slots 11
It is equal.Further, the width of all lower slots 12 is equal, and the depth of all lower slots 12 is equal.
Optionally, the width l of the upper slot 11 is the 1/50~2/25 of its depth d；The width l of the lower slot 12 is its depth
Spend the 1/50~2/25 of d.Applicants have discovered that when the width l of the upper slot 11 is the 1/50~2/25 of its depth d, preferably
When the width l on ground, the lower slot 12 is also the 1/50~2/25 of its depth d, the calorific value of the heater body 1 can both make
Alumina raw material in crucible is all melt into molten soup, can also make 1 major radius both ends of heater body and short axle both ends formed compared with
For apparent temperature difference, so that it is ellipse so that sapphire crystal is grown up to cross section due to the presence of temperature difference during long brilliant
Circular crystal.
In the present embodiment, the heater body is divided into fire-bar 4 with adjacent lower slot 12 by the upper slot 11, is owned
The width of fire-bar 4 can be equal.
Optionally, the width of the fire-bar 4 can be 5~10 times of 11 width of upper slot.
Further, the width of the fire-bar 4 can be 5~10 times of 12 width of lower slot.
Applicants have discovered that open up upper slot 11 and lower slot 12 in the manner described above in the heater body 1, formation
It the width of all fire-bars 4 and is equal in length, in this way the power convenient for the control heater body 1 during long brilliant, thus
Convenient for controlling the growth rate and quality of sapphire crystal.
In the present embodiment, the positive electrode 2 and negative electrode 3 are all set in the heater body 1, optionally, institute
It states positive electrode 2 and the negative electrode 3 is set to the ipsilateral of the heater body 1, for example, as shown in figure 3, being all set to institute
On the top surface for stating heater body 1, so as to the installation of heater body 1.
Optionally, the positive electrode 2 and the negative electrode 3 are respectively arranged at the 1 cross section major radius of heater body
Two endpoints at, be easily assembled, form uniform current loop.
In the present embodiment, the heater is graphite heater, and graphite high temperature resistance, anti-deformation are strong, thus
Further increase the quality of sapphire crystal.
The following are the design parameter of the heater provided according to a kind of preferred embodiment of the application, the heater is ellipse
Shape, short radius r=290mm, major radius R=330mm, the high h=700mm of heater, from the heater top surface
Open upper slot 12 altogether down along its bus, each upper groove width l1=10mm, deep d1=600mm, from the heater bottom surface along its mother
Line up opens lower slot 12 altogether, each lower groove width l2=10mm, deep d2=600mm, the heater material are graphite.Using upper
The sapphire crystal that heater prepares 400kg is stated, is drawn in same level and takes 4 inch wafer sticks, wafer stick length and reachable
1381mm。
Contrastingly, under identical preparation process, actionradius is (290+330)/2=310mm, remaining parameter is with before
Sapphire crystal 400kg prepared by the identical circular shape heater of oval heater is stated, is drawn in same level and takes 4 inches of crystalline substances
Pole, wafer stick length and only up to 1000mm or so, that is, use the circle of sapphire crystal single layer made from heater used herein
The stick amount of drawing of shape crystal increases by 17.43% or so than sapphire crystal made from conventional heater, and 400kg crystal total can be drawn more
4 inch wafer stick 1000mm or more.
To improve the utilization rate of sapphire crystal, reduce the production cost of wafer stick.
Combine detailed description and exemplary example that the application is described in detail above, but these explanations are simultaneously
It should not be understood as the limitation to the application.It will be appreciated by those skilled in the art that without departing from the application spirit and scope,
A variety of equivalent substitution, modification or improvements can be carried out to technical scheme and embodiments thereof, these each fall within the application
In the range of.The protection scope of the application is determined by the appended claims.
Claims (9)
1. a kind of oval heater for sapphire crystallization, which is characterized in that the heater includes: heater body
(1), positive electrode (2) and negative electrode (3), wherein
The heater body (1) is the cylinder that cross section is ellipse,
Upper slot (11) are opened up to the bottom surface of heater body along its bus from the top surface of the heater body (1),
Lower slot (12) are opened up to the top surface of heater body along its bus from the bottom surface of the heater body (1),
The upper slot (11) is arranged alternately with the lower slot (12),
The positive electrode (2) and negative electrode (3) are all set on the heater body (1).
2. a kind of oval heater for sapphire crystallization according to claim 1, which is characterized in that the heating
The range of the length ratio α of the major radius R and short radius r of device main body (1) cross section are 1.0 < α≤1.2.
3. a kind of oval heater for sapphire crystallization according to claim 1, which is characterized in that
The width of the upper slot (11) is equal；And/or
The depth of the upper slot (11) is equal；And/or
The width of the upper slot (11) is the 1/50~2/25 of its depth.
4. a kind of oval heater for sapphire crystallization according to claim 1, which is characterized in that
The width of the lower slot (12) is equal；And/or
The depth of the lower slot (12) is equal；And/or
The width of the lower slot (12) is the 1/50~2/25 of its depth.
5. a kind of oval heater for sapphire crystallization according to claim 1, which is characterized in that the upper slot
(11) heater body is divided into fire-bar (4) with adjacent lower slot (12), the width of all fire-bars (4) is equal；With/
Or
The width of the fire-bar (4) is 5~10 times of upper slot (11) width；And/or
The width of the fire-bar (4) is 5~10 times of lower slot (12) width.
6. a kind of oval heater for sapphire crystallization according to claim 1, which is characterized in that the positive electricity
Pole (2) and the negative electrode (3) are set to the ipsilateral of the heater body (1).
7. a kind of oval heater for sapphire crystallization according to claim 1, which is characterized in that the positive electricity
Pole (2) and the negative electrode (3) are respectively arranged at two endpoints of the heater body (1) cross section major radius.
8. a kind of oval heater for sapphire crystallization according to claim 1, which is characterized in that the heating
Device is graphite heater.
9. a kind of oval heater for sapphire crystallization according to claim 1, which is characterized in that the heating
The range of the length ratio β of the short radius r of the height h and heater body (1) cross section of device is 1.5 < β < 2.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821762619.6U CN209194104U (en) | 2018-10-29 | 2018-10-29 | A kind of oval heater for sapphire crystallization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821762619.6U CN209194104U (en) | 2018-10-29 | 2018-10-29 | A kind of oval heater for sapphire crystallization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209194104U true CN209194104U (en) | 2019-08-02 |
Family
ID=67409551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821762619.6U Active CN209194104U (en) | 2018-10-29 | 2018-10-29 | A kind of oval heater for sapphire crystallization |
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| Country | Link |
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| CN (1) | CN209194104U (en) |
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2018
- 2018-10-29 CN CN201821762619.6U patent/CN209194104U/en active Active
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