CN109576777A - Crystal growth double crucible and crystal growth technique - Google Patents
Crystal growth double crucible and crystal growth technique Download PDFInfo
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- CN109576777A CN109576777A CN201811640510.XA CN201811640510A CN109576777A CN 109576777 A CN109576777 A CN 109576777A CN 201811640510 A CN201811640510 A CN 201811640510A CN 109576777 A CN109576777 A CN 109576777A
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- crucible
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- raw material
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- crystal growth
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Abstract
The invention discloses a kind of crystal growth double crucibles, are related to technical field of crystal growth, which includes the lower crucible for placing the upper crucible of raw material with being used for crystal growth；The top of the lower crucible is arranged in the upper crucible, and upper crucible bottom periphery and lower crucible opening periphery are tightly connected；The upper crucible bottom surface is provided with the material spilling hole for leading to the lower crucible；The upper crucible and lower crucible are pyrolytic boron nitride crucible.Application during VB method grows indium phosphide, using double crucible structure, and the crystal growth technique using the double crucible, it can make indium phosphide polycrystal raw material and dopant S full and uniform mixing, the carrier concentration range for growing S-InP monocrystalline is reduced, single crystal longitudinal direction carrier concentration deviation can control in (3-6) x1018/cm3, the crystal of high quality, high uniformity is obtained, and the piece rate of monocrystalline improves 5%.
Description
Technical field
The present invention relates to technical field of crystal growth, more particularly to a kind of crystal growth double crucible and crystal growth
Technique.
Background technique
Indium phosphide InP is one of great strategic important semiconductor material, optic communication, millimeter wave high frequency, low noise,
Broadband microelectronics is integrated to wait fields to have important application.
With the development of infrared detector technology in recent years, III-V centered on GaAs series, InP series is started
The designing technique of race's Effects of GaAs/AlGaAs Quantum Wells material is also wide to the research of the infrared detector of the superlattice structures such as Quantum Well
General development.Its principle is exactly a kind of light-detecting device made of the photoconductive effect using semiconductor material.So-called photoconduction effect
It answers, refers to a kind of physical phenomenon for causing illuminated material electric conductivity to change by radiation.Photoconductive detector is military and national
Economic every field has extensive use.It is mainly used for radionetric survey and detection, industry automatically in visible light or near infrared band
Control, Photometric Measurement etc.；Infrared band be mainly used for missile guidance, infrared thermal imaging, in terms of.Indium phosphide material
Material is all highly suitable as the core material of optical detector on electrology characteristic and material property.
Indium phosphide single crystal growing method is mainly VGF method (vertical gradient solidification) and VB method (vertical Bridgman at present
Method).Traditional VB method indium phosphide single crystal growth is to be mixed directly into indium phosphide raw material and dopant " sulphur " to be packed into together to nitrogenize
Then boron crucible carries out crystal growth technique, provide important raw material-for the preparation of indium phosphide single crystal substrate and mix sulphur indium phosphide list
Brilliant material S-InP.
In this case some problems be can bring about, since sulphur (S) is used as one VI race's elements, its dividing in indium phosphide crystal
Solidifying coefficient is smaller, indium phosphide single crystal preparation when directly with indium phosphide polycrystal raw material it is admixed together after, start crystal growth, this
Sample will cause a large amount of sulphur (S) and be deposited on crystal tail portion, cause doping concentration uneven, and head carrier concentration is low, and tail portion carries
The problems such as sub- concentration is then higher is flowed, uses traditional single crucible VB method crystal growth technique at present, whole the longitudinal of crystal carries
Flowing sub- concentration can be in (2-8) x1018/cm3, such a range, it can be seen that the range of entire concentration distribution is larger；And it is right
S-InP crystal growth rate can produce bigger effect, and the especially deviation of its doping concentration and full wafer uniformity all can be to device
Emission wavelength uniformity etc. has significant impact.
Summary of the invention
The first object of the present invention is to carry out providing a kind of double crucible in S-InP crystal growing process using VB method.
The first object of the present invention is realized by the following technical scheme:
A kind of crystal growth double crucible, which is characterized in that including the upper crucible for placing raw material and for crystalline substance
The lower crucible of body growth；The top of the lower crucible is arranged in the upper crucible, and upper crucible bottom periphery and lower crucible opening are outer
Week is tightly connected；The upper crucible bottom surface is provided with the material spilling hole for leading to the lower crucible；The upper crucible is with lower crucible
Pyrolytic boron nitride crucible.
As an improved technical scheme, the upper crucible bottom is flat or downward projection of arcuate bottom.
As an improved technical scheme, the quantity of the material spilling hole of the upper crucible bottom is one or more.
As an improved technical scheme, the lower crucible bottom is taper, and bottom is provided with seed crystal chamber.
Second purpose of the invention is to be based on above-mentioned double crucible, provide a kind of crystal growth technique, keeps indium phosphide polycrystal former
Material is uniformly mixed with dopant sulphur, to grow the S-InP monocrystal of high quality, high uniformity.Of the invention second
Purpose is realized by the following technical scheme:
A kind of crystal growth technique uses above-mentioned crystal growth double crucible, which comprises the following steps:
S1: double crucible is put into a quartz ampoule, and polycrystal raw material and dopant are put into upper crucible；
S2: a quartzy sealing cap is covered at the top of quartz ampoule, then quartz ampoule is vacuumized, quartzy sealing cap is welded, completes stone
The sealing of English pipe；
S3: the temperature control of double crucible:
The temperature of upper crucible controls: being gradually heated to the melting point of polycrystal raw material, then maintains constant temperature；As the temperature rises
Lower crucible is slowly dropped by the material spilling hole of upper crucible bottom after polycrystal raw material and dopant thawing；When all raw material instills
After lower crucible, upper crucible continues to keep constant temperature, duration T；
The temperature of lower crucible controls: carrying out thermostatic control always to the temperature of lower crucible, temperature is controlled in polycrystal raw material
Melting point；After all raw material instills lower crucible, lower crucible continues to keep constant temperature, duration T.
S4: the cooling of double crucible completes crystal growth in lower crucible.
As an improved technical scheme, the polycrystal raw material is indium phosphide polycrystal raw material, and the dopant is sulphur.
As an improved technical scheme, in step S3, the temperature of described pair of upper crucible controls and the temperature control to lower crucible
System, temperatur-timel curve are preset in a program, carry out temperature control to upper crucible and lower crucible respectively by program.
As an improved technical scheme, in step S3, the temperature control of the upper crucible is control by stages, is specifically included
With the next stage:
First stage, heating start, and continue 2h, are warming up to 600 DEG C；
Second stage: continue 1.5h, be warming up to 850 DEG C；
Phase III: continue 2h, be warming up to 950 DEG C~1050 DEG C；
Fourth stage: continue 1h, be warming up to 1000 DEG C~1070 DEG C；
5th stage: duration 40h ± 1h, 1000 DEG C~1070 DEG C of constant temperature；5th stage included time T；
The temperature control of the lower crucible is 1000 DEG C~1070 DEG C of constant temperature, duration 46.5h ± 1h, includes time T.
As an improved technical scheme, after all raw material instills lower crucible, upper crucible and lower crucible continue to keep permanent
The duration T of temperature is 3~5h.
During beneficial having the technical effect that caused by the present invention grows S-InP single crystal material with VB method, using double
Crucible structure, and the crystal growth technique used using this double crucible, can make indium phosphide polycrystal raw material and dopant S
Uniform mixing, reduces the carrier concentration deviation of S-InP monocrystal radial direction, crystal longitudinal direction carrier concentration deviation can be controlled
System is in (3-6) x1018/cm3, the crystal of high quality, high uniformity is obtained, and the piece rate of crystal improves 5%.
Detailed description of the invention
Fig. 1 is the longitudinal section structural drawing of double crucible provided in an embodiment of the present invention.
Fig. 2 is the temperatur-timel curve figure of upper crucible in the temperature controlled processes of the bright embodiment offer of this law.
Fig. 3 is the temperatur-timel curve figure of lower crucible in the temperature controlled processes of the bright embodiment offer of this law.
Specific embodiment
The present invention is described in further detail with specific embodiment with reference to the accompanying drawing.
As shown in Figure 1, crystal growth double crucible, which includes upper crucible 10 and lower crucible 20；Upper crucible
10 are arranged above lower crucible 20, and upper 10 bottom periphery of crucible and lower 20 opening periphery of crucible are tightly connected；Upper 10 bottom of crucible
For flat or downward projection of arcuate bottom, upper 10 bottom surface of crucible is provided with the material spilling hole 11 for leading to lower crucible 20, upper crucible 10
For placing raw material needed for crystal growth；Lower 20 lower part of crucible is taper, and bottom is provided with seed crystal chamber 21, and lower crucible 20 is used for
Crystal growth；Upper crucible 10 and lower crucible 20 are boron nitride crucible.
In use, double crucible is put into a quartz ampoule (conventional components, figure in do not show), by indium phosphide polycrystal block stock
It is put into upper crucible 10 with dopant sulphur, element sulphur at this time is added in upper crucible 10 with solid granular, the doping of sulphur
It is and to fully take into account its segregation coefficient in indium phosphide using the carrier concentration of required crystal as foundation, passes through
Science is calculated.Then a quartzy sealing cap (conventional components, figure in do not show) is covered at the top of quartz ampoule, then to quartz
Pipe is vacuumized, and after reaching suitable vacuum degree, is welded, is then heated to quartz ampoule, constant temperature to quartzy sealing cap
And the processes such as cooling, as the temperature rises, indium phosphide polycrystal block stock and dopant sulphur lead to after the thawing of upper crucible 10
The material spilling hole 11 for crossing 10 bottom surface of crucible slowly instills in lower crucible 20, completes crystal growth in lower crucible 20.
Based on above-mentioned double crucible, the present embodiment also discloses a kind of S-InP crystal growth technique, including following step
It is rapid:
S1: double crucible is put into a quartz ampoule, and indium phosphide polycrystal block stock and dopant sulphur are put into crucible 10；
S2: a quartzy sealing cap is covered at the top of quartz ampoule, then quartz ampoule is vacuumized, quartzy sealing cap is welded, completes stone
The sealing of English pipe；
S3: the heating and thermostatic control of double crucible
The heating and thermostatic control of upper crucible 10:
It is gradually heated to the melting point of indium phosphide polycrystal, then maintains constant temperature；Indium phosphide polycrystal raw material as the temperature rises
Lower crucible 20 is slowly dropped by the material spilling hole 11 of upper 10 bottom surface of crucible after melting with dopant sulphur；When under all raw material instillation
After crucible 20, upper crucible 10 continues to keep constant temperature, duration T；
As shown in Fig. 2, the heating and thermostatic control to upper crucible 10 are temperature control stage by stage, including with the next stage:
First stage, heating start, and continue 2h, are warming up to 600 DEG C；
Second stage: continue 1.5h, be warming up to 850 DEG C；
Phase III: continue 2h, be warming up to 950 DEG C~1050 DEG C；
Fourth stage: continue 1h, be warming up to 1000 DEG C~1070 DEG C；
5th stage: duration 40h ± 1h, 1000 DEG C~1070 DEG C of constant temperature；5th stage included time T；
The thermostatic control of lower crucible 20: as shown in figure 3, carrying out thermostatic control, temperature control always to the temperature of lower crucible 20
Make the melting point in indium phosphide polycrystal raw material；After all raw material instills lower crucible 20, lower crucible 20 continues to keep constant temperature, continues
Time is T.Wherein 1000 DEG C~1070 DEG C of thermostat temperature, duration 46.5h ± 1h include time T；
S4: double crucible is cooling, completes crystal growth in lower crucible 20.
The heating and thermostatic control of upper crucible 10 and the thermostatic control to lower crucible, temperatur-timel curve are set in advance in
In program, controlled by program.
Pass through the material spilling hole of upper 10 bottom of crucible after indium phosphide polycrystal raw material and dopant melt as the temperature rises
11 slowly instill lower crucible 20, can ensure that sulphur is full and uniform in upper crucible 10 to the temperature control of upper crucible 10 stage by stage
Be dissolved into indium phosphide raw material；The temperature of lower crucible 20 remains at 1070 DEG C, drips indium phosphide polycrystal and dopant sulphur
After entering lower crucible, be in melting state always, make element sulphur in indium phosphide material more sufficiently, uniform dissolution mixing；When upper
After all raw materials instill lower crucible 20 in crucible 10, continue constant temperature time T, time T is about 3~5h (liter of upper crucible 10
Warm and thermostatically controlled 5th stage and the thermostatic control time of lower crucible 20 include this time).
The raw material that the material spilling hole 11 of upper crucible 10 is set as needed one or more, but is to ensure that in crucible 10
The speed that lower crucible 20 is instilled after thawing is moderate, cannot be too fast, otherwise will cause S-InP mixing unevenly, influences final S-InP
The head piece of crystal and the carrier concentration deviation of cauda.The quantity that material spilling hole 11 is used in the present embodiment is one, is located at upper earthenware
10 bottom surface middle position of crucible.
After the completion of the heating and thermostatic control of double crucible, cooling treatment is carried out, S-InP monocrystalline is carried out in lower crucible 20
Growth.The crystal bar grown is sliced, the indices of a piece and cauda are measured, wherein being surveyed for carrier concentration
Obtain head piece 3.31x1018/cm3, cauda 5.13x1018/cm3, it can be seen that pass through double crucible disclosed in this invention and crystalline substance
The carrier concentration deviation of body growth technique, whole crystal head and tail portion is very small, can control in (3~6) x1018/cm3
Between, the crystal of high quality, high uniformity is not only obtained, the piece rate of crystal is further improved, piece rate can mention
It is high by 5% or so.
The above description is only a preferred embodiment of the present invention, is not intended to restrict the invention, for those skilled in the art
For member, the invention may be variously modified and varied.All within the spirits and principles of the present invention, without made by creativeness
Any modification, equivalent substitution, improvement and etc. should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of crystal growth double crucible, which is characterized in that including the upper crucible for placing raw material and be used for crystal
The lower crucible of growth；The top of the lower crucible, upper crucible bottom periphery and lower crucible opening periphery is arranged in the upper crucible
It is tightly connected；The upper crucible bottom surface is provided with the material spilling hole for leading to the lower crucible；The upper crucible and lower crucible are heat
Solve boron nitride crucible.
2. according to double crucible described in right 1, which is characterized in that the upper crucible bottom is flat or downward projection of arc
Shape bottom.
3. according to double crucible described in right 1, which is characterized in that the quantity of the material spilling hole of the upper crucible bottom be one or
Person is multiple.
4. according to double crucible described in right 1, which is characterized in that the lower crucible bottom is taper, and bottom is provided with seed crystal
Chamber.
5. a kind of crystal growth technique uses double crucible described in 4 any one of Claims 1 to 4, which is characterized in that including
Following steps:
S1: double crucible is put into a quartz ampoule, and polycrystal raw material and dopant are put into upper crucible；
S2: a quartzy sealing cap is covered at the top of quartz ampoule, then quartz ampoule is vacuumized, quartzy sealing cap is welded, completes quartz ampoule
Sealing；
S3: the temperature control of double crucible:
The temperature of upper crucible controls: being gradually heated to the melting point of polycrystal raw material, then maintains constant temperature；Polycrystalline as the temperature rises
Lower crucible is slowly dropped by the material spilling hole of upper crucible bottom after raw material and dopant thawing；When all raw material instills lower earthenware
After crucible, upper crucible continues to keep constant temperature, duration T；
The temperature of lower crucible controls: carrying out thermostatic control always to the temperature of lower crucible, temperature controls the melting point in polycrystal raw material；
After all raw material instills lower crucible, lower crucible continues to keep constant temperature, duration T.
S4: the cooling of double crucible completes crystal growth in lower crucible.
6. temperature control process according to claim 5, which is characterized in that the polycrystal raw material is that indium phosphide polycrystal is former
Material, the dopant are sulphur.
7. temperature control process according to claim 6, which is characterized in that in step S3, the temperature of described pair of upper crucible
It controls and the temperature of lower crucible is controlled, temperatur-timel curve is preset in a program, by program respectively to upper crucible
Temperature control is carried out with lower crucible.
8. temperature control process according to claim 7, which is characterized in that in step S3, the temperature control of the upper crucible
It is made as control by stages, is specifically included with the next stage:
First stage, heating start, and continue 2h, are warming up to 600 DEG C；
Second stage: continue 1.5h, be warming up to 850 DEG C；
Phase III: continue 2h, be warming up to 950 DEG C~1050 DEG C；
Fourth stage: continue 1h, be warming up to 1000 DEG C~1070 DEG C；
5th stage: duration 40h ± 1h, 1000 DEG C~1070 DEG C of constant temperature；5th stage included time T；
The temperature control of the lower crucible is 1000 DEG C~1070 DEG C of constant temperature, duration 46.5h ± 1h, includes time T.
9. temperature control process according to claim 6, which is characterized in that after all raw material instills lower crucible, on
It is 3~5h that crucible and lower crucible, which continue to keep the duration T of constant temperature,.
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| CN201811640510.XA CN109576777A (en) | 2018-12-29 | 2018-12-29 | Crystal growth double crucible and crystal growth technique |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111041553A (en) * | 2019-12-04 | 2020-04-21 | 山东天岳先进材料科技有限公司 | Crystal growth device and method |
| CN115403047A (en) * | 2022-08-30 | 2022-11-29 | 浙大宁波理工学院 | Purification method and device for recovered silicon powder |
| CN115537921A (en) * | 2022-10-24 | 2022-12-30 | 广东先导微电子科技有限公司 | Synthesis method of indium phosphide |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000154088A (en) * | 1998-11-13 | 2000-06-06 | Sumitomo Electric Ind Ltd | Method and device for producing single crystal |
| JP2006306723A (en) * | 2006-06-22 | 2006-11-09 | Dowa Mining Co Ltd | Gallium arsenide single crystal |
| US20140109825A1 (en) * | 2012-10-18 | 2014-04-24 | Hitachi Metals, Ltd. | Equipment and method for producing crystal by vertical boat method |
| CN104047055A (en) * | 2013-03-12 | 2014-09-17 | 台山市华兴光电科技有限公司 | N-type indium phosphide monocrystalline growth preparation formula |
| CN105543949A (en) * | 2016-03-10 | 2016-05-04 | 中国电子科技集团公司第十三研究所 | Method for preparing compound semiconductor monocrystal through in-situ injection synthesis and continuous VGF (vertical gradient freezing)/VB (vertical bridgman) growth |
| CN205917343U (en) * | 2016-06-16 | 2017-02-01 | 云南中科鑫圆晶体材料有限公司 | But split VGF growth of single crystal crucible zhonghuan |
| CN108060454A (en) * | 2017-12-15 | 2018-05-22 | 广东先导先进材料股份有限公司 | A kind of VGF methods prepare the device and method of gallium arsenide |
| CN209537670U (en) * | 2018-12-29 | 2019-10-25 | 珠海鼎泰芯源晶体有限公司 | Crystal growth double crucible |
-
2018
- 2018-12-29 CN CN201811640510.XA patent/CN109576777A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000154088A (en) * | 1998-11-13 | 2000-06-06 | Sumitomo Electric Ind Ltd | Method and device for producing single crystal |
| JP2006306723A (en) * | 2006-06-22 | 2006-11-09 | Dowa Mining Co Ltd | Gallium arsenide single crystal |
| US20140109825A1 (en) * | 2012-10-18 | 2014-04-24 | Hitachi Metals, Ltd. | Equipment and method for producing crystal by vertical boat method |
| CN104047055A (en) * | 2013-03-12 | 2014-09-17 | 台山市华兴光电科技有限公司 | N-type indium phosphide monocrystalline growth preparation formula |
| CN105543949A (en) * | 2016-03-10 | 2016-05-04 | 中国电子科技集团公司第十三研究所 | Method for preparing compound semiconductor monocrystal through in-situ injection synthesis and continuous VGF (vertical gradient freezing)/VB (vertical bridgman) growth |
| CN205917343U (en) * | 2016-06-16 | 2017-02-01 | 云南中科鑫圆晶体材料有限公司 | But split VGF growth of single crystal crucible zhonghuan |
| CN108060454A (en) * | 2017-12-15 | 2018-05-22 | 广东先导先进材料股份有限公司 | A kind of VGF methods prepare the device and method of gallium arsenide |
| CN209537670U (en) * | 2018-12-29 | 2019-10-25 | 珠海鼎泰芯源晶体有限公司 | Crystal growth double crucible |
Non-Patent Citations (1)
| Title |
|---|
| 徐永强,李贤臣,孙聂枫,杨光耀,周晓龙,谢德良,刘二海,孙同年: "Φ100mm掺硫InP单晶生长研究" * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111041553A (en) * | 2019-12-04 | 2020-04-21 | 山东天岳先进材料科技有限公司 | Crystal growth device and method |
| CN115403047A (en) * | 2022-08-30 | 2022-11-29 | 浙大宁波理工学院 | Purification method and device for recovered silicon powder |
| CN115403047B (en) * | 2022-08-30 | 2023-12-08 | 浙大宁波理工学院 | Purification method and device for recycling silicon powder |
| CN115537921A (en) * | 2022-10-24 | 2022-12-30 | 广东先导微电子科技有限公司 | Synthesis method of indium phosphide |
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