CN205115667U - Vertical pulling is heater for single crystal - Google Patents
Vertical pulling is heater for single crystal Download PDFInfo
- Publication number
- CN205115667U CN205115667U CN201520860066.8U CN201520860066U CN205115667U CN 205115667 U CN205115667 U CN 205115667U CN 201520860066 U CN201520860066 U CN 201520860066U CN 205115667 U CN205115667 U CN 205115667U
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- heating zone
- pulling
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- heater
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Abstract
The utility model discloses a vertical pulling is heater for single crystal, including heater body, heater body has relative first end and the second end, and heater body has a plurality of first slot and a plurality of second slots that extend to the first end from the second end that extend from the first end to the second end, and a plurality of first slots set up with a plurality of second slots in turn, form the unit that generates heat between two adjacent first slots, and every unit that generates heat all includes a plurality of heating sections that are connected, and at least one heating section has the opening. The utility model discloses a vertical pulling is heater for single crystal has open structure on the heating section of unit that generates heat, can carry out corresponding adjustment according to the product quality demand, can form temperature gradient various demands, that optimize such as the high pulling rate of adaptation, low impurity content, low defect to finally obtain high -quality monocrystalline silicon.
Description
Technical field
The utility model belongs to silicon single crystal preparing technical field, is specifically related to a kind of pulling of crystals well heater.
Background technology
Vertical pulling method is also called Czochralski method, is called for short CZ method.The feature of CZ method is by the polysilicon material be contained in crucible to form melt, then seed crystal is inserted bath surface and carries out welding, rotate simultaneously and promote seed crystal, successively through seeding, shouldering, turn shoulder, isodiametric growth and epilog, and pulling growth silicon single-crystal.
Along with the development of photovoltaic industry, the production cost of pulling of crystals and quality of finished are faced with higher requirement.The series of parameters such as thermal field and single crystal pulling speed, foreign matter content and defect distribution are closely bound up, directly affect cost and the quality of pulling of crystals.Existing pulling of crystals thermal field, usual employing to be slotted the square waveform well heater processed to tubular graphite component, its control mode is single, heating power is relatively fixing, is difficult to coordinate the miscellaneous part of thermal field, form the temperature distribution optimized, and does not catch up with the demand of industry development gradually.
Utility model content
The purpose of this utility model is to provide a kind of pulling of crystals well heater, thermograde when pulling of crystals can be regulated to grow.
A kind of technical scheme that the utility model adopts is: a kind of pulling of crystals well heater, comprise heater body, heater body has relative first end and the second end, heater body has multiple the first slit of extending to the second end from first end and multiple the second slit extended to first end from the second end, multiple first slit and multiple second slit are arranged alternately, a heat-generating units is formed between two adjacent the first slits, each heat-generating units includes multiple heating zone be connected, and at least one heating zone has opening.
Feature of the present utility model is also,
Heat-generating units comprises the first heating zone and the second heating zone that the axis along heater body arranges, first heating zone or the second heating zone are formed between first slit second slit adjacent with, opening is opened in the first heating zone and/or the second heating zone, and near first end or the second end.
What the heat-generating units axis also comprised perpendicular to heater body was arranged first connects heating zone and second and connects heating zone, first connects heating zone is connected between the first heating zone and the second heating zone near first end, second connects heating zone near the second end and for connecting two adjacent heat-generating units, and opening is also opened in the first connection heating zone or second and connects heating zone.
Opening is opened in the first connection heating zone, and the opening of the first heating zone and/or the second heating zone connects heating zone near first.
The beneficial effects of the utility model are: a kind of pulling of crystals well heater of the present utility model, the heating zone of heat-generating units has hatch frame, correspondingly can adjust according to product quality demand, as, change the position of opening, shape and size, utilize this kind of pulling of crystals well heater drawn monocrystalline silicon, thermograde that adapt to the various demands such as high pulling rate, low impurity content, low defect, that optimize can be formed, thus the final silicon single crystal obtaining high-quality.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of a kind of pulling of crystals well heater of the present utility model;
Fig. 2 is the another kind of structural representation of a kind of pulling of crystals well heater of the present utility model.
In figure, 10. first end, 20. the second ends, 1. the first slit, 2. the second slit, 3. the first heating zone, 4. the second heating zone, 5. first connects heating zone, and 6. second connects heating zone, 7. the first opening, 8. the second opening.
Embodiment
A kind of pulling of crystals well heater that the utility model provides comprises heater body, heater body has relative first end 10 and the second end 20, heater body has multiple the first slit 1 of extending to the second end 20 from first end 10 and multiple the second slit 2 extended to first end 10 from the second end 20, multiple first slit 1 is arranged alternately with multiple second slit 2, a heat-generating units is formed between two adjacent the first slits 1, each heat-generating units includes multiple heating zone be connected, and described at least one, heating zone has opening.
Below in conjunction with the drawings and specific embodiments, the utility model is described in detail.
Embodiment 1
The structure of a kind of pulling of crystals well heater that the utility model provides as shown in Figure 1, its heater body has relative first end 10 and the second end 20, heater body has multiple the first slit 1 of extending to the second end 20 from first end 10 and multiple the second slit 2 extended to first end 10 from the second end 20, multiple first slit 1 is arranged alternately with multiple second slit 2, forms a heat-generating units between two adjacent the first slits 1.Each heat-generating units includes multiple heating zone be connected.In the present embodiment, heat-generating units comprises the first heating zone 3, second heating zone 4, first and connects heating zone 5 and the second connection heating zone 6, and heating zone comprises the first heating zone 3 and the second heating zone 4.First heating zone 3 and the second heating zone 4 are arranged along the axis of this heater body.First heating zone 3 and the second heating zone 4 are formed between first slit 1 second slit 2 adjacent with respectively.First connection heating zone 5 is connected heating zone 6 and all arranges perpendicular to the axis of this heater body with second.First connects heating zone 5 near first end 10, and is connected between the first heating zone 3 and the end of the second heating zone 4, and second connects heating zone 6 near the second end 20, and this heat-generating units is connected to another heat-generating units.Opening can be opened in the first heating zone 3 and the second heating zone 4 simultaneously, also can be located at above-mentioned two heating zones any one.In the present embodiment, opening comprises the first opening 7 and the second opening 8, first heating zone 3 and the second heating zone 4 having the first opening 7, second near the second end 20 place and connects heating zone 6 and have the second opening 8 at close the second end 20 place.Particularly, the first opening 7 and the second opening 8 are rectangle.Certainly, also optionally in the first heating zone 3 and the second heating zone 4 upper shed of part heat-generating units, or optionally can connect heating zone 5 upper shed first, only need heating part relative to the axisymmetrical of this heater body.
Certainly, the first opening 7 of a kind of pulling of crystals well heater of the present utility model is not limited to close the second end 20 place in the first heating zone 3 and the second heating zone 4, also can at close first end 10 place of the first heating zone 3 and the second heating zone 4.Second opening 8 is not limited to close the second end 20 place connecting heating zone 6 second, also can connect close first end 10 place of heating zone 5 first.Also optionally partly can arrange with upper shed and part is not arranged, all can realize temperature and regulate, its difference is only the difference regulating heating intensity.Equally, the first opening 7 of a kind of pulling of crystals well heater of the present utility model and the quantity of the second opening 8 are all not limited to one, can also be two or three or more, the gap between each entity of corresponding well heater also adjusts thereupon.
The heating zone of a kind of pulling of crystals well heater of the present embodiment has opening, can change heater resistance distribution, thus change well heater heating power everywhere, realize the optimization of pulling of crystals thermal field, can obtain various required thermograde.
Embodiment 2
The pulling of crystals well heater of the present embodiment is substantially identical with the structure of embodiment 1, and its difference is, first opening 7 of the present embodiment and the cross section of the second opening 8 non-rectangle.Wherein, the sectional area of the first opening 7 this well heater axis vertical increases gradually.Particularly, the first opening 7 shape is trapezoidal or trilateral, and the shape of the second opening 8 is trapezoidal, trilateral or Long Circle etc.Certainly, the shape of opening can also be regulated as required, or be designed to opening do not run through the blind slot structure in outside in this well heater.
The change of the present embodiment opening shape can form the adjustment that becomes more meticulous more being conducive to thermograde.
A kind of pulling of crystals well heater using method of the present utility model is identical with the well heater use procedure of prior art, includes following steps:
The first step, charging, according to a conventional method by the process of single crystal growing furnace prepurging, installs thermal field, confirms after trouble free, start to add polysilicon, charging capacity 200kg, carries out vacuumizing, hunts leak, pressure after closing stove;
Second step, utilizes a kind of pulling of crystals well heater material of the present utility model to form melt, promotes the power of well heater to about 85kw, maintenance argon flow amount is 50-90slpm, furnace pressure is 10-20Torr, and crucible turns 4-9 rev/min, forms melt after polysilicon melting;
3rd step, uses common process, carries out seeding, shouldering successively, turns shoulder and isodiametric growth, namely obtain silicon single crystal after finally finishing up.
Thermograde that adapt to the various demands such as high pulling rate, low impurity content, low defect, that optimize can be formed during this kind of pulling of crystals well heater drawn monocrystalline silicon of the present utility model, thus ensure the quality of the silicon single crystal that final vertical pulling obtains.
Claims (4)
1. a pulling of crystals well heater, it is characterized in that, comprise heater body, heater body has relative first end (10) and the second end (20), described heater body has multiple the first slit (1) of extending to described the second end (20) from described first end (10) and multiple the second slit (2) extended to described first end (10) from described the second end (20), described multiple first slit (1) and multiple second slit (2) are arranged alternately, a heat-generating units is formed between two adjacent the first slits (1), each heat-generating units includes multiple heating zone be connected, described at least one, heating zone has opening.
2. a kind of pulling of crystals well heater as claimed in claim 1, it is characterized in that, described heat-generating units comprises the first heating zone (3) and the second heating zone (4) that the axis along described heater body arranges, described first heating zone (3) or the second heating zone (4) are formed between first slit (1) second slit (2) adjacent with, described opening is opened in described first heating zone (5) and/or the second heating zone (6), and near first end (10) or the second end (20).
3. a kind of pulling of crystals well heater as claimed in claim 2, it is characterized in that, what the described heat-generating units axis also comprised perpendicular to described heater body was arranged first connects heating zone (5) and second and connects heating zone (6), described first connects heating zone (5) near described first end (10), and be connected between described first heating zone (3) and the second heating zone (4), described second connects heating zone (6) near described the second end (20), and for connecting two adjacent heat-generating units, described opening is also opened in described first and connects heating zone (5) or the second connection heating zone (6).
4. a kind of pulling of crystals well heater as claimed in claim 3, it is characterized in that, described opening is opened in described first and connects heating zone (5), and the opening of described first heating zone (3) and/or the second heating zone (4) connects heating zone (5) near described first.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520860066.8U CN205115667U (en) | 2015-10-30 | 2015-10-30 | Vertical pulling is heater for single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520860066.8U CN205115667U (en) | 2015-10-30 | 2015-10-30 | Vertical pulling is heater for single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205115667U true CN205115667U (en) | 2016-03-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520860066.8U Expired - Fee Related CN205115667U (en) | 2015-10-30 | 2015-10-30 | Vertical pulling is heater for single crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205115667U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637387A (en) * | 2015-10-30 | 2017-05-10 | 西安通鑫半导体辅料有限公司 | Heater for monocrystal straightening and drawing and monocrystal straightening and drawing method |
| CN111847865A (en) * | 2020-07-13 | 2020-10-30 | 长飞光纤光缆股份有限公司 | Sleeve type graphite heater |
-
2015
- 2015-10-30 CN CN201520860066.8U patent/CN205115667U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637387A (en) * | 2015-10-30 | 2017-05-10 | 西安通鑫半导体辅料有限公司 | Heater for monocrystal straightening and drawing and monocrystal straightening and drawing method |
| CN106637387B (en) * | 2015-10-30 | 2019-12-17 | 西安通鑫半导体辅料有限公司 | heater for pulling single crystal and pulling method |
| CN111847865A (en) * | 2020-07-13 | 2020-10-30 | 长飞光纤光缆股份有限公司 | Sleeve type graphite heater |
| CN111847865B (en) * | 2020-07-13 | 2021-12-28 | 长飞光纤光缆股份有限公司 | Sleeve type graphite heater |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160330 Termination date: 20211030 |