CN106637385A - Cz (Czochralski) crystal heater convenient for temperature gradient regulation and Cz crystal method - Google Patents
Cz (Czochralski) crystal heater convenient for temperature gradient regulation and Cz crystal method Download PDFInfo
- Publication number
- CN106637385A CN106637385A CN201510727377.1A CN201510727377A CN106637385A CN 106637385 A CN106637385 A CN 106637385A CN 201510727377 A CN201510727377 A CN 201510727377A CN 106637385 A CN106637385 A CN 106637385A
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- Prior art keywords
- heater
- pulling
- crystals
- slit
- easy
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a Cz (Czochralski) heater convenient for temperature gradient regulation. A heater main body is provided with a first end part and a second end part which are opposite; first narrow slots are formed in a way of extending from the first end part to the second end part; second narrow slots are formed in a way of extending from the second end part to the first end part; the first narrow slots and the second narrow slots are alternately arranged; partial or all of the second narrow slots are regulating slots for heating distribution regulation. A Cz crystal method provided by the invention comprises the following steps of charging the materials; melting the materials by the heater to form melt; regulating the power of the heater; controlling the longitudinal temperature gradient of the melt; inserting seed crystals into the surface of the melt for melting connection; sequentially performing seeding, shouldering, rotation, equal-diameter growth and ending to obtain monocrystalline silicon. The Cz crystal heater convenient for temperature gradient regulation and the Cz crystal method provided by the invention have the advantages that the heating power is regulated through regulating grooves, so that different temperature distribution can be obtained; optimized temperature gradients with various requirements of high pulling speed, low impurity content, low defects and the like can be formed.
Description
Technical field
The invention belongs to monocrystalline silicon manufacturing technology field, and in particular to a kind of to be easy to adjust the straight of thermograde
Crystal-pulling heater, further relates to be easy to adjust the pulling of crystals heater of thermograde using aforementioned
Pulling of crystals method.
Background technology
Vertical pulling method is also called Czochralski method, abbreviation CZ methods.The characteristics of CZ methods is will to be mounted in crucible
In polysilicon material to form melt, then by seed crystal insertion bath surface carry out welding, while rotate
And seed crystal is lifted, sequentially pass through seeding, shouldering, turn shoulder, isodiametric growth and epilog, pulling growth
Silicon single crystal.With the development of photovoltaic industry, the production cost and quality of finished of pulling of crystals are faced with higher
Requirement.The series of parameters such as thermal field and single crystal pulling speed, impurity content and defect distribution are closely bound up,
Directly affect the cost and quality of pulling of crystals.Existing pulling of crystals thermal field, generally using to tubular stone
The square waveform heater that black element channel is processed, its control mode is single, heating power is relatively fixed,
The miscellaneous part for coordinating thermal field, the Temperature Distribution for forming optimization are difficult to, industry development has not gradually been caught up with
Demand.
The content of the invention
It is an object of the invention to provide a kind of pulling of crystals heater for being easy to adjust thermograde, profit
The temperature parameter of pulling of crystals growth can be conveniently adjusted with it.
The present invention also aims to provide a kind of using the aforementioned pulling of crystals for being easy to adjust thermograde
With the pulling of crystals method of heater, it can be conveniently adjusted monocrystalline growing process, so as to improve vertical pulling
The quality of monocrystalline.
A kind of technical scheme of the present invention is：It is easy to adjust the pulling of crystals heating of thermograde
Device, including heater body, heater body has relative first end and the second end, along first
End is extended to the second end to be had multiple first slits and extends to first end along the second end
Multiple second slits are provided with, multiple first slits and the second slit are arranged alternately, in multiple second slits,
It is partly or entirely the regulating tank of regulation heating distribution.
Of the invention the characteristics of, also resides in,
Multiple regulating tanks are symmetrical relative to the central axis of heater body.
A heat-generating units are formed between two neighboring first slit, the heat-generating units edge residing for regulating tank adds
The length of hot device main body axial direction is less than or equal in heater body between first end and the second end
Distance.
Multiple second slit middle parts are divided into the regulating tank of regulation heating distribution, and the length of regulating tank is less than remaining
The length of the second slit.
From the second end to first end direction, regulating tank is along perpendicular to heater body centerline direction
Sectional area is tapered into.
From the second end to first end direction, regulating tank is along perpendicular to heater body centerline direction
Sectional area becomes larger.
Another kind of technical scheme of the present invention is：Pulling of crystals method, comprises the following steps：
Charging；
Using the aforesaid pulling of crystals heater material for being easy to adjust thermograde to form melt；
The power of the pulling of crystals heater for adjusting thermograde is easy in regulation, controls the longitudinal direction temperature of melt
Degree gradient, by seed crystal insertion bath surface welding is carried out, and carry out successively seeding, shouldering, turn shoulder, etc.
Monocrystalline silicon is obtained final product after Diameter growth and ending.
Of the invention the characteristics of, also resides in,
During isodiametric growth, keep crystalline substance to switch to 8-14rpm, crucible and switch to 4-10rpm, argon flow amount is
50-90slpm, furnace pressure is 10-20Torr.
It is easy to the pulling of crystals for adjusting thermograde to include heater body, heater body tool with heater
There is relative first end and the second end, being extended to the second end along first end has multiple first
Slit and be extended to first end along the second end and have multiple second slits, multiple first slits and
Second slit is arranged alternately, and is partly or entirely the regulating tank of regulation heating distribution in multiple second slits.
A heat-generating units are formed between two neighboring first slit, the heat-generating units edge residing for regulating tank adds
The length of hot device main body axial direction is less than or equal in heater body between first end and the second end
Distance.
The invention has the beneficial effects as follows：The present invention be easy to adjust thermograde pulling of crystals heater
And pulling of crystals method adjusts heating power using regulating tank, it is possible to obtain different Temperature Distributions, energy
Formed and adapt to the various demands such as high pulling rate, low impurity content, low defect, optimization thermograde.
Description of the drawings
Fig. 1 is a kind of structural representation of the pulling of crystals heater for being easy to adjust thermograde of the present invention
Figure；
Fig. 2 is that another kind of structure of the pulling of crystals heater for being easy to adjust thermograde of the present invention is shown
It is intended to.
In figure, 10. first end, 20. the second ends, 1. the first slit, 2. the second slit, 3. generates heat single
Unit, 21. regulating tanks.
Specific embodiment
What the present invention was provided is easy to the pulling of crystals for adjusting thermograde to include heater body with heater,
There is thereon relative first end 10 and the second end 20, heater body has multiple from first end
The first slit 1 that portion 10 extends to the second end 20 and multiple from the second end 20 to first end
10 the second slits 2 for extending, multiple first slits 1 are arranged alternately with multiple second slits 2.Multiple
It is partly or entirely the regulating tank 21 of regulation heating distribution in two slits 2.
With reference to the accompanying drawings and detailed description the present invention is described in detail.
Embodiment 1
The present embodiment be easy to adjust thermograde pulling of crystals heater structure as shown in figure 1,
There is relative first end 10 and the second end 20 in heater body.Heater body has multiple
The first slit 1 from first end 10 to the second end 20 that extend from and it is multiple from the second end 20 to
The second slit 2 that first end 10 extends, multiple first slits 1 are arranged alternately with multiple second slits 2.
It is partly or entirely the regulating tank 21 of regulation heating distribution, multiple regulating tanks in multiple second slits 2
21 is symmetrical relative to the central axis of pulling of crystals heater.In the present embodiment, multiple second is narrow
A part for groove 2 is the regulating tank 21 of regulation heating distribution, in all of second slit 2, regulating tank
21 in multiple second slits 2 interval setting, that is, having one between two adjacent regulating tanks 21
Second slit 2.Length of the length of regulating tank 21 less than remaining the second slit 2.Certainly, according to need
Will, between two adjacent regulating tanks 21 can also have zero, two, three or more other
Second slit 2, and configuration can be changed according to thermoregulator needs.
A heat-generating units 3, the heating residing for regulating tank 21 are formed between two adjacent the first slits 1
Length of the unit 3 along the heater body axial direction is less than or equal to the first end 10 of the heater body
The distance between with the second end 20.In the present embodiment, the heat-generating units 3 residing for regulating tank 21 are along this
The length of heater body axial direction be equal to first end 10 and the second end 20 of the heater body away from
From.Length of remaining heat-generating units 3 without regulating tank 21 along the heater body axial direction is equal to should
The first end 10 of heater body and the distance of the second end 20.The first end 10 of the present embodiment
The upper end and lower end being located at respectively with the second end 20 in figure, but it is not limited to only which.
It is, of course, also possible to change the shape of regulating tank 21 so that from the second end 20 to heat-generating units 3
Inside, regulating tank 21 is adjusted perpendicular to the sectional area of the centerline direction of the heater body according to heating
Need, taper into or become big.
The present embodiment be easy to adjust thermograde pulling of crystals heater, regulating tank 21 be located
There is temperature difference in heating unit, send out so as to be formed in the pulling of crystals heater with other heating units
The adjustable thermal field of heat distribution.
Embodiment 2
The present embodiment be easy to adjust thermograde pulling of crystals heater structure as shown in Fig. 2
It is roughly the same with the technical scheme of embodiment 1, and its difference is, the institute of regulating tank 21 of the present embodiment
Heat-generating units 3 length less than first end 10 and the second end 20 of the heater body away from
From, regulating tank 21 length less than the heater body first end 10 and the second end 20 away from
From.It is, of course, also possible to change the shape of regulating tank 21 so that from the second end 20 to heat-generating units 3
Inside, regulating tank 21 is adjusted perpendicular to the sectional area of the centerline direction of the heater body according to heating
Need, taper into or become big.
The present embodiment be easy to adjust thermograde pulling of crystals heater, regulating tank 21 be located
The length of heating unit 3, can less than the first end 10 of the heater body and the distance of the second end 20
To provide bigger temperature difference.
The present invention is also provided a kind of being used using the pulling of crystals for being easy to regulation thermograde as above and is added
The pulling of crystals method of hot device, the method can be used to manufacture the pulling of crystals of various sizes, originally sentence 8 inch
As a example by, illustrate the pulling of crystals method.Specifically, the method is comprised the following steps：
The first step, charging, according to a conventional method by the process of single crystal growing furnace prepurging, installs thermal field, confirms fault-free
Afterwards, be initially added into polysilicon, inventory 200kg, close vacuumized after stove, hunted leak, pressure；
Second step, material to form melt, be easy to adjust the vertical pulling list of thermograde as above by lifting
To 85kw or so, holding argon flow amount is 50-90slpm to the power of crystalline substance heater, and furnace pressure is
10-20Torr, crucible turns 4-9 rev/min, and after polysilicon melting melt is formed；
3rd step, using common process, carries out successively seeding, shouldering, turns shoulder and isodiametric growth, finally
Finished up and cooled down.Seeding length is reached after 150mm, is carried out shouldering and is turned shoulder；When isometrical, protect
Hold crystalline substance and turn 8-14rpm, crucible and turn 4-10rpm, argon flow amount is 50-90slpm, and furnace pressure is 10-20Torr,
Achievable crystal growth average pull rate is 1.2mm/min；After ending, cooling completes i.e. removable stove.
The pulling of crystals method of the present embodiment, is easy to adjust the pulling of crystals heating of thermograde by this
Device forms the various demands such as high pulling rate, low impurity content, low defect that adapt to, the thermograde of optimization.
Claims (10)
1. it is easy to adjust the pulling of crystals heater of thermograde, it is characterised in that including heater
Main body, the heater body has relative first end (10) and the second end (20), along
One end (10) is extended to the second end (20) has multiple first slits (1) and along second
End (20) is extended to first end (10) multiple second slits (2), and the plurality of first
Slit (1) and the second slit (2) are arranged alternately, in the plurality of second slit (2), part or
The regulating tank (21) of all regulation heating distributions.
2. it is easy to as claimed in claim 1 adjust the pulling of crystals heater of thermograde, it is special
Levy and be, the plurality of regulating tank (21) is symmetrical relative to the central axis of the heater body.
3. it is easy to as claimed in claim 1 adjust the pulling of crystals heater of thermograde, it is special
Levy and be, a heat-generating units (3), the tune are formed between two neighboring first slit (1)
Length of the heat-generating units (3) residing for section groove (21) along heater body axial direction is less than or equal to
The distance between first end (10) and the second end (20) in the heater body.
4. being easy to as described in any one of claim 1-3 adjusts the pulling of crystals heating of thermograde
Device, it is characterised in that the plurality of second slit (2) middle part is divided into the regulating tank of regulation heating distribution
(21), length of the length of the regulating tank (21) less than remaining the second slit (2).
5. it is easy to as claimed in claim 4 adjust the pulling of crystals heater of thermograde, it is special
Levy and be, from the second end (20) to first end (10) direction, the regulating tank (21)
Taper into along the sectional area perpendicular to the heater body centerline direction.
6. it is easy to as claimed in claim 4 adjust the pulling of crystals heater of thermograde, it is special
Levy and be, from the second end (20) to first end (10) direction, the regulating tank (21)
Become larger along the sectional area perpendicular to the heater body centerline direction.
7. pulling of crystals method, it is characterised in that comprise the following steps：
Charging；
The pulling of crystals heating of thermograde is adjusted using being easy to as described in any one of claim 1-6
Device material is forming melt；
It is easy to the power of the pulling of crystals heater of regulation thermograde described in adjusting, controls the melt
Longitudinal temperature gradient, seed crystal insertion bath surface is carried out into welding, and carry out successively seeding, shouldering,
Turn to obtain final product monocrystalline silicon after shoulder, isodiametric growth and ending.
8. pulling of crystals method as claimed in claim 7, it is characterised in that the isodiametric growth mistake
Cheng Zhong, keeps crystalline substance to switch to 8-14rpm, crucible and switchs to 4-10rpm, and argon flow amount is 50-90slpm, furnace pressure
For 10-20Torr.
9. pulling of crystals method as claimed in claim 7, it is characterised in that described to be easy to adjust temperature
The pulling of crystals of degree gradient heater includes heater body, and the heater body has relative the
One end (10) and the second end (20), extend along first end (10) to the second end (20)
It is provided with multiple first slits (1) and extends to first end (10) along the second end (20) and sets
Multiple second slits (2) are equipped with, the plurality of first slit (1) and the second slit (2) are arranged alternately,
It is partly or entirely the regulating tank (21) of regulation heating distribution in the plurality of second slit (2).
10. pulling of crystals method as claimed in claim 9, it is characterised in that two neighboring described
A heat-generating units (3), the heating list residing for the regulating tank (21) are formed between one slit (1)
The length of first (3) along heater body axial direction is less than or equal to first end in the heater body
The distance between portion (10) and the second end (20).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510727377.1A CN106637385A (en) | 2015-10-30 | 2015-10-30 | Cz (Czochralski) crystal heater convenient for temperature gradient regulation and Cz crystal method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510727377.1A CN106637385A (en) | 2015-10-30 | 2015-10-30 | Cz (Czochralski) crystal heater convenient for temperature gradient regulation and Cz crystal method |
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| Publication Number | Publication Date |
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| CN106637385A true CN106637385A (en) | 2017-05-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510727377.1A Pending CN106637385A (en) | 2015-10-30 | 2015-10-30 | Cz (Czochralski) crystal heater convenient for temperature gradient regulation and Cz crystal method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107460539A (en) * | 2017-06-30 | 2017-12-12 | 内蒙古中环光伏材料有限公司 | A kind of monocrystalline silicon production method of heater and the application heater |
| CN109371459A (en) * | 2018-12-21 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of ladder-like heater improving melt temperature gradient |
| WO2024021849A1 (en) * | 2022-07-25 | 2024-02-01 | 隆基绿能科技股份有限公司 | Heater for single crystal furnace and single crystal furnace |
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| CN203923445U (en) * | 2014-05-30 | 2014-11-05 | 宁夏隆基硅材料有限公司 | A kind of single crystal growing furnace combination heater |
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| CN1317058A (en) * | 1998-06-26 | 2001-10-10 | Memc电子材料有限公司 | Electrical resistance heater for crystal growing apparatus and its method of use |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107460539A (en) * | 2017-06-30 | 2017-12-12 | 内蒙古中环光伏材料有限公司 | A kind of monocrystalline silicon production method of heater and the application heater |
| CN109371459A (en) * | 2018-12-21 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of ladder-like heater improving melt temperature gradient |
| WO2024021849A1 (en) * | 2022-07-25 | 2024-02-01 | 隆基绿能科技股份有限公司 | Heater for single crystal furnace and single crystal furnace |
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Effective date of registration: 20200213 Address after: 710100 No. 388, middle route, Xi'an, Shaanxi, Changan District Applicant after: Longji green energy Polytron Technologies Inc Address before: 710300 Shaanxi city of Xi'an province Huxian Fengjing Industrial Park Lake Waterfront Road No. 3 Applicant before: Xi'an Tongxin Semiconductor Accessory Material Co., Ltd. |
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Application publication date: 20170510 |