CN206385277U - A kind of silicon solar hypoxemia, low light attenuation monocrystal thermal-field - Google Patents
A kind of silicon solar hypoxemia, low light attenuation monocrystal thermal-field Download PDFInfo
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- CN206385277U CN206385277U CN201621361820.4U CN201621361820U CN206385277U CN 206385277 U CN206385277 U CN 206385277U CN 201621361820 U CN201621361820 U CN 201621361820U CN 206385277 U CN206385277 U CN 206385277U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 110
- 239000010703 silicon Substances 0.000 title claims abstract description 109
- 206010021143 Hypoxia Diseases 0.000 title claims abstract description 19
- 208000018875 hypoxemia Diseases 0.000 title claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 239000010453 quartz Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 14
- 230000009467 reduction Effects 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 13
- 239000010439 graphite Substances 0.000 claims abstract description 13
- 239000002210 silicon-based material Substances 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 230000036632 reaction speed Effects 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 7
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 54
- 239000001301 oxygen Substances 0.000 abstract description 54
- 229910052760 oxygen Inorganic materials 0.000 abstract description 54
- 238000012360 testing method Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 2
- 241001347978 Major minor Species 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 210000004483 pasc Anatomy 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The utility model discloses a kind of silicon solar hypoxemia, low light attenuation monocrystal thermal-field, working chamber including crystal pulling furnace and the graphite heater in working chamber, graphite heater uses the primary heater and the secondary heater corresponding to crucible bottom corresponding to crucible middle and upper part, primary heater and secondary heater are respectively by two power supply independent controls, in the material stage, primary heater and secondary heater are while open work, and the power ratio of primary heater and secondary heater is 2：1~3：1, in crystal pulling phase, the power of reduction primary heater and secondary heater, the power of primary heater is more than the power of secondary heater, silicon material is set to be in crystalline temperature, temperature of thermal field during crystal pulling whole by primary heater major control, makes thermal convection current remitted its fury, slows down the reaction speed of quartz crucible, reduce the oxygen and impurity produced by being chemically reacted due to quartz crucible and silicon, silicon rod oxygen content, oxygen alms giver's silicon chip yield ratio are reduced, silicon rod minority carrier life time is improved, the LID of cell piece link is decayed reduces.
Description
Technical field
The utility model belongs to silicon solar pulling technique, and in particular to a kind of silicon solar hypoxemia, low light attenuation monocrystalline heat
.
Background technology
Crystal pulling is that the elemental silicon melted silicon atom in solidification is arranged in many nucleus with diamond lattice, if these are brilliant
Core grows up to high preferred orientation identical crystal grain, then these crystal grain it is parallel combine just crystallize into monocrystalline silicon.
Silicon solar crystal pulling industry typically carries out crystal pulling using vertical pulling method, and vertical pulling method needs to produce heat by graphite heater
Amount, radiates the silicon material for carrying quartz crucible in stove heating by heat and reaches that 1420 DEG C are fused into liquid, then again in certain shape
Under state, monocrystalline is produced using vertical pulling method.
Using during Grown by CZ Method silicon single crystal, the success or not of silicon monocrystal growth and the height of quality be by
What the Temperature Distribution of thermal field was determined.The suitable thermal field of Temperature Distribution, not only silicon monocrystal growth is smooth, and quality is higher；If
The Temperature Distribution of thermal field is unreasonable, and various defects are easily produced during growing silicon single crystal, influences quality, the meeting of situation seriously
There is morphotropism and can not grow Chu Lai monocrystalline.Therefore, the analysis of system is carried out to thermal field of single crystal furnace, contributes to optimization crystal life
Long technological process, improves the final product quality of crystal.
The chemical equation of single crystal growing furnace routine thermal field is as follows：
Quartz crucible SiO at high temperature2Constantly reaction produces O2, 99% oxygen content is mainly suffered from this in silicon rod, still,
Show through researching and analysing, can so cause the silicon rod head oxygen content of conventional thermal field production exceeded, be higher by the silicon rod head of standard
Qualified finished product is cannot function as, can only be cut away, that cuts away works as material recycling, causes the waste of non-silicon cost.
At present, from the point of view of the trend that market silicon chip develops, customer requirement silicon chip is dropped in terms of decay, oxygen content index
It is low, to improve the interior quality of silicon chip.However, because there is problem above in the conventional thermal field of single crystal growing furnace so that the silicon chip produced
The demand of client can not be met.
Utility model content
The purpose of this utility model, which is that offer is a kind of, can improve silicon chip quality, reduce the silicon solar of cost of labor
Hypoxemia, low light attenuation monocrystal thermal-field.
The purpose of this utility model is realized by following technical measures：A kind of silicon solar hypoxemia, low light attenuation monocrystalline
Thermal field, includes the working chamber and the graphite heater in working chamber of crystal pulling furnace, and the valve of graphite heater is along working chamber
Internal circumference sets and enclosed the crucible included for holding silicon material, it is characterised in that：The graphite heater, which is used, corresponds to earthenware
The primary heater of crucible middle and upper part and the secondary heater corresponding to crucible bottom, the primary heater and secondary heater are respectively by two
Power supply independent control, the secondary heater is located at the underface of primary heater, the valve of the primary heater and the valve of secondary heater
Enclose that the cylinder included is coaxially isometrical respectively, and there is gap between the primary heater and the valve of secondary heater, in material rank
Section, the primary heater and secondary heater open work simultaneously, and the power ratio of primary heater and secondary heater is 2：1~3：1,
In crystal pulling phase, the power of reduction primary heater and secondary heater, and power of the power more than secondary heater of primary heater, make
Silicon material is in crystalline temperature, temperature of thermal field during crystal pulling whole by primary heater major control, so that thermal convection current remitted its fury, to subtract
The reaction speed of slow quartz crucible, reduces the oxygen and impurity produced by being chemically reacted due to quartz crucible and silicon.
The utility model with conventional thermal field identical space in using being added by two graphite of two power supply independent controls
Hot device, in the material stage, is heated, heat radiation is produced, by quartz crucible simultaneously according to the power of technique initialization respectively
Melting silicon materials because the power required for technique significantly declines, therefore drop into liquid, and in the crystal pulling phase such as seeding, isometrical
The power of low primary heater and the power of secondary heater, make thermal field gradient change (i.e. thermal convection current remitted its fury), reduction heat
Field internal temperature, to slow down the reaction speed of quartz crucible, reduces due to the oxygen and impurity produced by quartz crucible and pasc reaction, reduces
The metal impurities that quartz crucible reaction is produced are fused into silicon liquid, so as to reduce silicon rod oxygen content, reduction oxygen alms giver's silicon chip output ratio
Example, improves silicon rod minority carrier life time, and the LID of cell piece link is decayed reduces.In addition, the oxygen content of the utility model silicon rod is whole
It is up to standard, it is to avoid the waste for the non-silicon cost that the silicon rod head higher traditional method of indicating the pronunciation of a Chinese character of oxygen content is caused.
Required for the hotspot location pro rate major-minor heater that thermal field general power of the present utility model is calculated according to technique
Respective power, the hotspot location in thermal field is virtual, and the hotspot location in the utility model thermal field actually deviate from often
The hotspot location of thermal field is advised, in order to be consistent the respective power, it is necessary to needed for pro rate major-minor heater therewith as far as possible.
Operation principle of the present utility model is：Oxygen can be combined with room in the case of normal process, form microdefect；
Oxygen cluster can be agglomerated into, with electric property；Oxygen precipitation can also be formed, induced defects are introduced.These all may be to list
The performance of crystal silicon produces influence.And the utility model makes crystal in growth course by thermal field variation, oxygen enters crystals
Reduce, the silicon rod of output can be all in critical field, while the performance of monocrystalline silicon can be improved.
The utility model is in the material stage, and the power of primary heater is 85 ± 8KW, and the power of secondary heater is 35 ± 8KW,
The heat time of primary heater and secondary heater is 5 ± 2 hours；In crystal pulling phase, the power of primary heater is 55 ± 15KW, secondary
The power of heater is 0~35KW, and the heat time of primary heater and secondary heater is 5 ± 2 hours.
As a kind of embodiment of the present utility model, in crystal pulling phase, the power of secondary heater is reduced to zero, that is, is closed
Secondary heater, now, temperature of thermal field when controlling whole crystal pulling completely by primary heater.
As a kind of preferred embodiment of the present utility model, the valve of the primary heater is arranged at intervals for length, i.e., long
Valve and short valve are arranged at intervals, and the long valve and short valve are respectively several right, and two long valves per centering are oppositely arranged, and two per centering
Individual short valve is also oppositely arranged.The valve of the utility model primary heater is set to length valve interval setting, thus it is possible to vary thermal field gradient.
As a kind of preferred embodiment of the present utility model, the long valve of the primary heater and the length ratio of short valve are
More than 1：1 and less than or equal to 1.9：1.
As a kind of preferred embodiment of the present utility model, the length of the valve of the secondary heater is identical.
As a kind of preferred embodiment of the present utility model, the length of the short valve of the primary heater is more than the pair and added
The length of the valve of hot device.
In order to avoid cost is wasted, as a kind of improvement of the present utility model, for controlling the power supply of secondary heater also to control
Secondary heater of the system in other crystal pulling furnace working chambers.
Compared with prior art, the utility model has following significant effect：
(1) the utility model can slow down the reaction speed of quartz crucible, reduce due to the oxygen produced by quartz crucible and pasc reaction
And impurity, the metal impurities for reducing quartz crucible reaction generation are fused into silicon liquid, so as to reduce silicon rod oxygen content, reduction oxygen alms giver
Silicon chip yield ratio, improves silicon rod minority carrier life time, and the LID of cell piece link is decayed reduces, and improves traction.
(2) thermal field technique of the present utility model reduces crucible bottom temperature, can slow down what the reaction of inner quartz device was produced
The amount of oxygen, makes silicon rod head oxygen content entirely reach 8.8 × 10E17atoms/cm of standard3Hereinafter, it is minimum accomplish 6.0 ×
10E17atoms/cm3Left and right, with respect to the range of decrease 28% or so；Reduction compound B-O, makes head silicon rod in the LID of battery link
0.64% or so can be reduced.
(3) the oxygen content of the utility model silicon rod is all up to standard, it is to avoid it is non-that the silicon rod head higher traditional method of indicating the pronunciation of a Chinese character of oxygen content is caused
The waste of silicon cost.
(4) the reduction of the utility model oxygen content can reduce oxygen and combine to form microdefect with room, reduce oxygen precipitation and draw
The problems such as entering induced defects, improves monocrystalline silicon performance.
Brief description of the drawings
The utility model is described in further detail with specific embodiment below in conjunction with the accompanying drawings.
Fig. 1 is the structural representation for setting crystal pulling furnace of the present utility model；
Fig. 2 is the axial sectional view of the utility model primary heater and secondary heater；
Fig. 3 is that the boron-doping silicon rod that the utility model embodiment 1 is produced tests single oxygen content tendency chart；
Fig. 4 is that the boron-doping silicon rod of conventional thermal field production tests single oxygen content tendency chart；
Fig. 5 is the utility model embodiment 1 and conventional thermal field battery link battery testing attenuation verses figure；
Fig. 6 is the utility model embodiment 1 and conventional thermal field battery link battery testing efficiency comparative figure；
Fig. 7 is that mixing for the production of the utility model embodiment 2 sows the single oxygen content tendency chart of material silicon rod test；
Fig. 8 is that mixing for conventional thermal field production sows the single oxygen content tendency chart of material silicon rod test.
Embodiment
Embodiment 1
As shown in Figure 1, 2, a kind of silicon solar hypoxemia of the utility model, low light attenuation monocrystal thermal-field, include the work of crystal pulling furnace 1
Make chamber 2 and the graphite heater in working chamber 2, the internal circumference of the valve of graphite heater along working chamber 2 sets and enclosed
The crucible for holding silicon material is included, graphite heater is used corresponding to the primary heater 3 of crucible middle and upper part and corresponding to crucible
The secondary heater 4 of bottom, primary heater 3 and secondary heater 4 are respectively by two power supply independent controls, for controlling secondary heater 4
Power supply also control the secondary heater in other crystal pulling furnace working chambers.Secondary heater 4 is located at the underface of primary heater 3,
It is coaxially isometrical that the valve of primary heater 3 and the valve 6 of secondary heater 4 enclose the cylinder included respectively, and primary heater 3 and secondary heater
There is gap 7, in the material stage, primary heater 3 and secondary heater 4 open work, primary heater 3 simultaneously between 4 valve and valve 6
Power ratio with secondary heater 4 is 2：1, in the present embodiment, the power of primary heater 3 is 86KW, the power of secondary heater 4
It is 43KW, the heat time is 5 hours, in crystal pulling phase, the power of reduction primary heater 3 and secondary heater 4, and primary heater 3
Power be more than secondary heater 4 power, in the present embodiment, reduce secondary heater 4 power to zero, that is, close secondary heater
4, the power of primary heater 3 is 55KW, and the heat time is 5 hours, silicon material is in crystalline temperature, now, complete by primary heater 3
Temperature of thermal field when controlling whole crystal pulling, so that thermal convection current remitted its fury, to slow down the reaction speed of quartz crucible, is reduced due to stone
English crucible and silicon chemically reacted produced by oxygen and impurity.
In the present embodiment, the valve of primary heater 3 is arranged at intervals for length, i.e., long valve 31 and short valve 32 are arranged at intervals, long
Valve 31 and short valve 32 are respectively several right, and the two long valve 31 per centering is oppositely arranged, and the two short valve 32 per centering is also relative to be set
Put.The valve of the utility model primary heater is set to length valve interval setting, thus it is possible to vary thermal field gradient.The length of primary heater 3
The length ratio of valve 31 and short valve 32 is 1.5：1, the length of the valve 6 of secondary heater 4 is identical, the length of the short valve 32 of primary heater 3
Length of the degree more than the valve 6 of secondary heater 4.
Three boron-doping silicon rods that the utility model thermal field is produced and the three boron-doping silicon rods progress produced by conventional thermal field
Compare, being sampled piece by each silicon rod extension position carries out oxygen content test, one contrast stove of simultaneous selection (conventional heat
) sample and contrasted in the same way.
As shown in Figure 3, Figure 4, three not synteny represent respectively in three silicon rods, Fig. 3, be that 160#01 (uses round dot respectively
The dotted line of composition is represented), in 160#04 (indicated by the solid line) and 160#05 (dotted line constituted with line segment is represented), Fig. 4, be respectively
150#12 (indicated by the solid line), 150#14 (dotted line constituted with line segment is represented) and 150#01 (the dotted line tables constituted with round dot
Show), transverse axis represents the length of silicon rod, and unit is mm, and the longitudinal axis represents the oxygen content of silicon rod, and unit is atoms/cm3.It can see
Go out, the silicon rod oxygen content head height tail made by conventional thermal field is low, the silicon rod head oxygen content that is made by the utility model thermal field and
Afterbody oxygen content maintains an equal level or lower slightly.The silicon rod head oxygen content made by conventional thermal field is 9.22 × 10E17atoms/cm3, lead to
Cross using the utility model thermal field, silicon rod head oxygen content can be made to be down to 6.43 × 10E17atoms/cm3, the range of decrease is 30%
Left and right.
Above-mentioned result of the test shows to be contained by the boron-doped silicon club head oxygen of the utility model hypoxemia, the making of low light attenuation monocrystal thermal-field
The range of decrease is measured substantially, all in 8.8 × 10E17atoms/cm of oxygen content as defined in crystal pulling industry3Below.
Produced by the utility model thermal field three boron-doping silicon rods are randomly choosed 1, separately, in, tail, conventional thermal field presses
Same way is sampled, and is then cut into slices and is strictly tested in battery-end, and tests attenuation as requested, and specific steps are such as
Under：
1st, according to head, in, tail strictly distinguish silicon chip, by experiment slice (silicon rod slicing made by the utility model thermal field) and
Piece (silicon rod slicing made by conventional thermal field) is contrasted while being produced in battery link, its whole is made into resultant battery
Piece.
2nd, according to battery testing attenuation requirement, separately, in, tail carry out test decay.
Test result is as shown in figure 5, solid line represents the boron-doping silicon rod produced by the utility model thermal field, and section is in battery-end
The attenuation data of test；Dotted line represents the boron-doping silicon rod produced by conventional thermal field, the attenuation data tested in battery-end of cutting into slices；It is horizontal
Axle represent silicon rod head, in and tail position, the longitudinal axis represents attenuation amplitude.It can be seen that by the utility model thermal field
The boron-doped silicon club head decay of production declines maximum.
According to the test result and the experimental result with reference to shown in Fig. 3, show the silicon rod made by the utility model thermal field
The reduction of oxygen content, can make the LID of cell piece substantially reduces, identical with silicon rod oxygen content range of decrease trend, mainly silicon rod head
Portion's decay range of decrease is 0.64%.
The boron-doping silicon rod that the utility model thermal field is produced randomly chooses 1, separately, in, tail, conventional thermal field stove is by identical
Mode is sampled, and is then cut into slices and is carried out in battery-end strictly to specific efficiency.
Comprise the following steps that：
1st, according to head, in, tail strictly distinguish silicon chip, by experiment slice (silicon rod slicing produced by the utility model thermal field) and
Piece (silicon rod slicing produced by conventional thermal field) is contrasted while being produced in battery link, its whole is made into resultant battery
Piece.
2nd, wherein, head in experiment slice, in, tail be all independent differentiation, count electrical respectively.
As shown in fig. 6, dotted line represents the boron-doping silicon rod produced by the utility model thermal field, the effect tested in battery-end of cutting into slices
Rate data；Solid line represents the boron-doping silicon rod produced by conventional thermal field, the efficiency data tested in battery-end of cutting into slices；Transverse axis represents silicon
The head of rod, in and tail position, the longitudinal axis represents efficiency amplitude.According to this group of test result and with reference to Fig. 3 shown in experiment knot
Really, what silicon rod head oxygen content reduction amplitude was brought more greatly is electrically more advantageous.Wherein, silicon rod head, which has, improves 0.15% effect
The advantage of rate.
Embodiment 2
The present embodiment and the difference of embodiment 1 are：The utility model thermal field is switched to by boron-doping to mix and sows material, its
Remaining parameter constant, the silicon rod produced per stove is sampled piece by silicon rod extension position and carries out oxygen content test；Simultaneous selection one
Contrast stove (using the crystal pulling furnace of conventional thermal field) is sampled and contrasted in the same way.
As shown in Figure 7 and Figure 8, using two not synteny represent respectively in two silicon rods, Fig. 7, be respectively 160#01 (use
Solid line is represented) and 160#03 (dotted line constituted with line segment is represented), Fig. 8 in, be 150#08 (indicated by the solid line) and 158# respectively
03 (dotted line constituted with line segment is represented), transverse axis represents the length of silicon rod, and unit is mm, and the longitudinal axis represents the oxygen content of silicon rod, single
Position is atoms/cm3.It can be seen that the silicon rod oxygen content head height tail produced by conventional thermal field is low, and given birth to by the utility model thermal field
The silicon rod head oxygen content and afterbody oxygen content of production maintain an equal level or lower slightly.The silicon rod head oxygen content made by conventional thermal field is 8.77
×10E17atoms/cm3, by using thermal field of the present utility model, can make silicon rod head oxygen content be down to 6.90 ×
10E17atoms/cm3, the range of decrease is 21% or so.
Above-mentioned result of the test shows, the utility model hypoxemia, low light attenuation monocrystal thermal-field mix that to sow silicon rod head oxygen content same
The range of decrease is obvious.
Mixing of producing of the utility model thermal field is sowed into silicon rod random selection 1 again, separately, in, tail, conventional thermal field stove is by identical
Mode is sampled, and is then cut into slices and is strictly tested in battery-end, and tests attenuation, specific steps and embodiment as requested
1 is identical.Test result shows that the decay of silicon rod head declines maximum.
According to the test result and the experimental result with reference to shown in Fig. 7, show the silicon rod oxygen of the utility model thermal field manufacture
The reduction of content, can make the LID of cell piece substantially reduces.It is identical with silicon rod oxygen content range of decrease trend.The mainly head range of decrease
0.64%.
The boron-doping silicon rod that the utility model thermal field is produced again randomly chooses 1, separately, in, tail, conventional thermal field stove presses phase
Sampled with mode, then cut into slices and carried out in battery-end strictly to specific efficiency.Specific steps and embodiment 1 are identical.
According to this group of test result and with reference to Fig. 7 shown in experimental result, silicon rod head oxygen content reduction amplitude it is bigger
That brings is electrically more advantageous.Wherein, silicon rod head can improve the advantage of 0.15% efficiency.
Embodiment not limited to this of the present utility model, according to the above of the present utility model, according to the general of this area
Logical technological know-how and customary means, under the premise of the above-mentioned basic fundamental thought of the utility model is not departed from, the utility model is being changed
The power ratio of material stage, primary heater and secondary heater is 2：1~3：1, the power of primary heater is 85 ± 8KW, pair heating
The power of device is 35 ± 8KW；In crystal pulling phase, the power of primary heater is 55 ± 15KW, the power of secondary heater is 0~
35KW；In the material stage, heat time of primary heater and secondary heater is 5 ± 2 hours, in crystal pulling phase, primary heater and
The heat time of secondary heater is 5 ± 2 hours；The long valve of primary heater and the length ratio of short valve are greater than 1：1 and be less than or
Equal to 1.9：1.Therefore, the utility model can also make the modification of other diversified forms, replace or change, and all fall within this practicality
Within new rights protection scope.
Claims (10)
1. a kind of silicon solar hypoxemia, low light attenuation monocrystal thermal-field, include the working chamber and the graphite in working chamber of crystal pulling furnace
Heater, the internal circumference of the valve of graphite heater along working chamber sets and enclosed the crucible included for holding silicon material, and it is special
Levy and be：The graphite heater uses the primary heater corresponding to crucible middle and upper part and the pair corresponding to crucible bottom to heat
Device, the primary heater and secondary heater are respectively by two power supply independent controls, and the secondary heater is being located at primary heater just
Lower section, the valve of the primary heater and secondary heater encloses that the cylinder included is coaxially isometrical respectively, and the valve of the primary heater
There is gap between the valve of secondary heater, in the material stage, the primary heater and secondary heater open work simultaneously, main to add
The power ratio of hot device and secondary heater is 2：1~3：1；In crystal pulling phase, the power of reduction primary heater and secondary heater, and
The power of primary heater is more than the power of secondary heater, silicon material is in crystalline temperature, by the whole crystal pulling of primary heater major control
When temperature of thermal field so that thermal convection current remitted its fury, to slow down the reaction speed of quartz crucible, reduction is carried out due to quartz crucible and silicon
Oxygen and impurity produced by chemical reaction.
2. silicon solar hypoxemia according to claim 1, low light attenuation monocrystal thermal-field, it is characterised in that：It is main in the material stage
The power of heater is 85 ± 8KW, and the power of secondary heater is 35 ± 8KW；In crystal pulling phase, the power of primary heater is 55 ±
15KW, the power of secondary heater is 0~35KW.
3. silicon solar hypoxemia according to claim 2, low light attenuation monocrystal thermal-field, it is characterised in that：It is main in the material stage
The heat time of heater and secondary heater is 5 ± 2 hours.
4. silicon solar hypoxemia according to claim 3, low light attenuation monocrystal thermal-field, it is characterised in that：It is main in crystal pulling phase
The heat time of heater and secondary heater is 5 ± 2 hours.
5. silicon solar hypoxemia according to claim 4, low light attenuation monocrystal thermal-field, it is characterised in that：In crystal pulling phase, drop
The power of low secondary heater close secondary heater to zero, now, thermal field temperature when controlling whole crystal pulling completely by primary heater
Degree.
6. silicon solar hypoxemia according to claim 5, low light attenuation monocrystal thermal-field, it is characterised in that：The primary heater
Valve be that length is arranged at intervals, i.e., long valve and short valve are arranged at intervals, the long valve and short valve be respectively it is several right, two per centering
Long valve is oppositely arranged, and two short valves per centering are also oppositely arranged.
7. silicon solar hypoxemia according to claim 6, low light attenuation monocrystal thermal-field, it is characterised in that：The primary heater
Long valve and the length ratio of short valve be greater than 1：1 and less than or equal to 1.9：1.
8. silicon solar hypoxemia according to claim 7, low light attenuation monocrystal thermal-field, it is characterised in that：The secondary heater
Valve length it is identical.
9. silicon solar hypoxemia according to claim 8, low light attenuation monocrystal thermal-field, it is characterised in that：The primary heater
Short valve length be more than the secondary heater valve length.
10. silicon solar hypoxemia according to claim 9, low light attenuation monocrystal thermal-field, it is characterised in that：For controlling secondary add
The power supply of hot device also controls the secondary heater in other crystal pulling furnace working chambers.
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|---|---|---|---|
| CN201621361820.4U CN206385277U (en) | 2016-12-13 | 2016-12-13 | A kind of silicon solar hypoxemia, low light attenuation monocrystal thermal-field |
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| CN201621361820.4U CN206385277U (en) | 2016-12-13 | 2016-12-13 | A kind of silicon solar hypoxemia, low light attenuation monocrystal thermal-field |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106521624A (en) * | 2016-12-13 | 2017-03-22 | 晶澳太阳能有限公司 | Silicon solar low-oxygen low-light-attenuation single crystal thermal field |
| WO2023185537A1 (en) * | 2022-03-31 | 2023-10-05 | Tcl中环新能源科技股份有限公司 | Process for increasing single crystal output |
-
2016
- 2016-12-13 CN CN201621361820.4U patent/CN206385277U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106521624A (en) * | 2016-12-13 | 2017-03-22 | 晶澳太阳能有限公司 | Silicon solar low-oxygen low-light-attenuation single crystal thermal field |
| CN106521624B (en) * | 2016-12-13 | 2024-02-23 | 晶澳太阳能有限公司 | Silicon solar low-oxygen low-light attenuation single crystal thermal field |
| WO2023185537A1 (en) * | 2022-03-31 | 2023-10-05 | Tcl中环新能源科技股份有限公司 | Process for increasing single crystal output |
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