CN208791811U - crystal growth device - Google Patents
crystal growth device Download PDFInfo
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- CN208791811U CN208791811U CN201821279838.9U CN201821279838U CN208791811U CN 208791811 U CN208791811 U CN 208791811U CN 201821279838 U CN201821279838 U CN 201821279838U CN 208791811 U CN208791811 U CN 208791811U
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- 239000013078 crystal Substances 0.000 title claims abstract description 94
- 239000007788 liquid Substances 0.000 claims abstract description 28
- 239000010453 quartz Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012774 insulation material Substances 0.000 claims abstract description 7
- 239000000155 melt Substances 0.000 claims abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 29
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 21
- 239000007789 gas Substances 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000000498 cooling water Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 206010007247 Carbuncle Diseases 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- ANDNPYOOQLLLIU-UHFFFAOYSA-N [Y].[Lu] Chemical compound [Y].[Lu] ANDNPYOOQLLLIU-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 1
- ORCSMBGZHYTXOV-UHFFFAOYSA-N bismuth;germanium;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Ge].[Ge].[Ge].[Bi].[Bi].[Bi].[Bi] ORCSMBGZHYTXOV-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- -1 lutetium aluminate Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 description 1
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本实用新型涉及一种晶体生长装置，其包括一石英炉、一底座、一顶盖、一提拉机构以及一籽晶；底座和顶盖分别固定于石英炉的下表面和上表面；石英炉包括一坩埚、包覆坩埚的保温材料、围绕坩埚的一加热器、一进气管、一波纹管、一籽晶杆、一出气管；坩埚内置有熔体，籽晶与熔体的液面相接；保温材料上部开设有上下贯穿的第一通孔，顶盖开设有上下贯穿的第二通孔，波纹管连接于顶盖和提拉机构之间，石英炉、顶盖、波纹管、提拉机构共同形成一炉腔，籽晶杆上下贯穿第一通孔、第二通孔，且籽晶杆两端分别连接籽晶和提拉机构；进气管贯穿底座而与炉腔连通；出气管贯穿顶盖，出气管的一端与炉腔连通。
The utility model relates to a crystal growth device, which comprises a quartz furnace, a base, a top cover, a pulling mechanism and a seed crystal; the base and the top cover are respectively fixed on the lower surface and the upper surface of the quartz furnace; the quartz furnace It includes a crucible, insulation material covering the crucible, a heater surrounding the crucible, an air inlet pipe, a bellows, a seed crystal rod, and an air outlet pipe; the crucible has a built-in melt, and the seed crystal is in phase with the liquid surface of the melt. The upper part of the thermal insulation material is provided with a first through hole that penetrates up and down, the top cover is provided with a second through hole that penetrates up and down, the bellows is connected between the top cover and the pulling mechanism, the quartz furnace, the top cover, the bellows, the lifting mechanism The pulling mechanism together forms a furnace cavity, the seed rod penetrates the first through hole and the second through hole up and down, and the two ends of the seed rod are respectively connected to the seed crystal and the pulling mechanism; the air inlet pipe penetrates the base and communicates with the furnace cavity; the air outlet pipe Passing through the top cover, one end of the gas outlet pipe is communicated with the furnace cavity.
Description
Technical field
The utility model relates to the preparation field of crystal more particularly to a kind of crystal growing apparatus.
Background technique
Czochralski method is also known as Czoncharlski method, is a kind of method of pulling growth high quality single crystal from melt.Czochralski method
Process be the raw material for constituting crystal is placed in crucible heat fusing, in bath surface welding seed crystal and start to lift, one
Under fixed condition, melt gradually solidifies in solid liquid interface and grows monocrystal.It is most wide that czochralski method has become application range
A kind of growing method.
Single crystal pulling furnace is the device of Czochralski grown crystal, generally by furnace chamber, heating system, handle system, atmosphere control
The part such as system processed forms.Wherein, furnace chamber is the container of crystal growth, is the important component part of single crystal pulling furnace.Furnace chamber rises
To the effects of completely cutting off air, completely cut off heat radiation.Under normal circumstances, furnace chamber is made by double-layer stainless steel, the logical cooling water conservation in centre.
Most single crystal pulling furnaces need the aperture on furnace chamber, for observing crystal growth condition.Due to the structure of furnace chamber complexity, so that single
Brilliant lifting furnace higher cost, is unfavorable for large-scale production；Cooling circulating water takes away amount of heat, is unfavorable for energy conservation；Due to furnace chamber
It for stainless steel welded the forming of size fixation, grows various sizes of crystal and needs to customize various sizes of furnace chamber, cause additional
Higher cost.
Therefore, it is necessary to which a kind of crystal growing apparatus of furnace chamber and cost can be simplified by designing one kind.
Utility model content
The purpose of this utility model is to provide a kind of simplified furnace chamber, reduce the crystal growing apparatus of cost.
To realize foregoing purpose, the utility model adopts the following technical solution: a kind of crystal growing apparatus, crystal growth dress
It sets including a quartzy furnace, a pedestal, a top cover, a shift mechanism and a seed crystal；The pedestal and top cover are individually fixed in stone
The lower surface and upper surface of English furnace；Quartzy furnace include a crucible, coat crucible thermal insulation material, around crucible a heater,
One air inlet pipe, a bellows, a seed rod, an escape pipe；The crucible is built-in with melt, and seed crystal connects with the liquid level of melt；
Thermal insulation material top offers perforative first through hole up and down, and top cover offers perforative second through-hole up and down, bellows connection
Between top cover and shift mechanism, the quartz furnace, top cover, bellows, shift mechanism are collectively formed a furnace chamber, above and below seed rod
Through first through hole, the second through-hole, and seed rod both ends are separately connected seed crystal and shift mechanism；Air inlet pipe through pedestal and and furnace
Chamber connection；Escape pipe runs through top cover, and one end of escape pipe is connected to furnace chamber.
The upper surface of the pedestal is convexly equipped with several fixture blocks as a further improvement of the utility model,；Quartzy furnace and bottom
Seat is fixedly connected by fixture block.
One first water inlet pipe, one first outlet pipe are connected on the pedestal as a further improvement of the utility model,.
One second water inlet pipe and one second outlet pipe are connected on the top cover as a further improvement of the utility model,.
The crystal growing apparatus further includes be used to support shift mechanism one as a further improvement of the utility model,
Bracket.
The crystal growing apparatus further includes a liquid bath as a further improvement of the utility model, and the liquid bath contains
There is absorbing liquid, the other end of escape pipe is located in absorbing liquid.
The absorbing liquid is water as a further improvement of the utility model,.
The utility model crystal growing apparatus significantly simplifies the structure of furnace chamber, and the same furnace chamber can be used for growing difference
The crystal of size also reduces the cost of crystal growth, can be realized good long brilliant effect.
Detailed description of the invention
Fig. 1 is the overall structure diagram of the embodiment of the utility model crystal growing apparatus.
Specific embodiment
Technical solution is clearly and completely described below in conjunction with the utility model embodiment, it is clear that described
Embodiment is only the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The range of the utility model protection.
Referring to Fig. 1, the utility model proposes a kind of crystal growing apparatus comprising a quartzy furnace 1, a pedestal 2, one top
Lid 3, a shift mechanism 4 and a seed crystal 5.The pedestal 2 and top cover 3 are individually fixed in the lower surface and upper surface of quartzy furnace 1.
Quartzy furnace 1 includes a crucible 11, thermal insulation material 12, the heater 13, one around crucible 11 for coating crucible 11
Air inlet pipe 14, a bellows 15, a seed rod 16, an escape pipe 17.
The crucible 11 is built-in with melt 18, and seed crystal 5 connects with the liquid level of melt 18.12 top of thermal insulation material offers
Under perforative first through hole 121, top cover 3 offer up and down perforative second through-hole 33, bellows 15 be connected to top cover 3 and lifting
Between mechanism 4, quartzy furnace 1, top cover 3, bellows 15, shift mechanism 4 are collectively formed a furnace chamber 19, and about 16 seed rod is through the
One through-hole 121, the second through-hole 33, and 16 both ends of seed rod are separately connected seed crystal 5 and shift mechanism 4.Air inlet pipe 14 runs through pedestal 2
And it is connected to furnace chamber 19；Escape pipe 17 runs through top cover 3, and one end of escape pipe 17 is connected to furnace chamber 19.
The center of first through hole 121 and the second through-hole 33 is located on same vertical line.
When needing to heat, heater 13 forms certain thermal field for crystal growth.
One first water inlet pipe 21, one first outlet pipe 22, the first water inlet pipe 21,22 and of the first outlet pipe are connected on pedestal 2
Pedestal 2 is capable of forming cooling water circulation and pedestal 2 is maintained to radiate.The upper surface of pedestal 2 is convexly equipped with several fixture blocks 23.Quartzy furnace 1 with
Pedestal 2 is fixedly connected by fixture block 23.
One second water inlet pipe 31 and one second outlet pipe 32, the second water inlet pipe 31,32 and of the second outlet pipe are connected on top cover 3
Top cover 3 is capable of forming cooling water circulation and top cover 3 is maintained to radiate.
Shift mechanism 4 can adjust the position of seed rod 16 as needed, be used for crystal growth.In certain of the utility model
In a little embodiments, crystal growing apparatus further includes a bracket 7, and bracket 7 is used to support shift mechanism 4.
Liquid bath 6 is loaded with absorbing liquid 61, and the other end of escape pipe 17 is located in absorbing liquid 61, and tail gas is absorbed by absorbing liquid
It discharges again afterwards, avoids pollution environment.In some embodiments of the utility model, absorbing liquid is water.
A kind of growing method is included the following steps: using above-mentioned crystal growing apparatus
S1: shove charge stage: quartzy furnace is fixed in the base；Raw material is packed into crucible, and installs heater；It will top
Lid is mounted on quartzy furnace, and escape pipe insertion is filled in the liquid bath of absorbing liquid；Cooling is passed through from the first water inlet pipe to pedestal
Water, by the cooling water of the first outlet pipe discharge pedestal；It is passed through cooling water from the second water inlet pipe to top cover, is discharged by the second outlet pipe
The cooling water of top cover；
S2: the first protective gas crystal growing stage: is passed through with certain flow from air inlet pipe to furnace chamber；After maintaining 0.5-2h, open
Qi Changjing program is passed through the second protective gas from air inlet pipe to furnace chamber with certain flow, and crystal starts to grow based on seed crystal,
With crystal growth, shift mechanism adjusts the position of seed rod as needed, until crystal growth is completed.
In some embodiments of the utility model, the first protective gas is argon gas.The density of argon gas is big compared with air, can be more
The readily air in displacement furnace chamber.
In some embodiments of the utility model, the second protective gas is one or more of nitrogen, inert gas
Mixed gas.Second protective gas forms protection atmosphere, is convenient for crystal growth.
The crystal growing apparatus and growing method can be applied to germanium crystal, silicon crystal, bismuth-germanium-oxide crystal, titanium dioxide
Tellurium crystal, doped yttrium vanadate crystal, doping vanadic acid gadolinium crystal, doped lithium columbate crystal, lithium tantalite doping crystal, doped yttrium aluminum
Garnet crystal, doping yttrium aluminate crystal, doping lutetium aluminate crystal, doped gadolinium gallium aluminum carbuncle crystal, doping Luetcium aluminum garnet are brilliant
Body, the growth for adulterating yttrium luetcium silicate crystal.
Embodiment 1.
Using above-mentioned crystal growing apparatus, the quartzy furnace of internal diameter 800mm is fixed with pedestal, top cover respectively, and will
Escape pipe insertion fills in the liquid bath of water；First water inlet pipe, the first outlet pipe and pedestal are capable of forming cooling water circulation and maintain bottom
Seat heat dissipation；Second water inlet pipe, the second outlet pipe and top cover are capable of forming cooling water circulation and maintain top cover heat dissipation；By 15kg doped silicon
Sour yttrium lutetium crystal raw material is packed into the iridium crucible that diameter is 160mm, and opens zirconium oxide heater；The heating of zirconium oxide heater
Mode is mid-frequency induction heating.5N argon gas is passed through from air inlet to furnace cavity bottom；After maintaining 0.5h, power supply is opened, into long crystalline substance
Program is passed through the 5N nitrogen of certain flow from air inlet to furnace cavity bottom；Tail gas enters among liquid bath by escape pipe, and passes through
Outlet after water absorbs.
When crystal growth, crystal growth condition is observed through furnace chamber, and in this, as the foundation of setting crystal growth program.
Preparation-obtained yttrium luetcium silicate crystal without cracking, bubble, be mingled with, scatter the defects of, diameter reaches 80mm, isometrical
Length 200mm, weight 9kg have reached good long brilliant effect.
Embodiment 2.
Using above-mentioned crystal growing apparatus, the quartzy furnace of internal diameter 600mm is fixed with pedestal, top cover respectively, and will
Escape pipe insertion fills in the liquid bath of water；First water inlet pipe, the first outlet pipe and pedestal are capable of forming cooling water circulation and maintain bottom
Seat heat dissipation；Second water inlet pipe, the second outlet pipe and top cover are capable of forming cooling water circulation and maintain top cover heat dissipation；8kg is adulterated into yttrium
Aluminum carbuncle crystal raw material is packed into the iridium crucible that diameter is 150mm, and opens zirconium oxide heater；Zirconium oxide heater adds
Hot mode is mid-frequency induction heating.5N argon gas is passed through from air inlet to furnace cavity bottom；After maintaining 1h, power supply is opened, into long crystalline substance
Program is passed through 5N argon gas from air inlet to furnace cavity bottom；Tail gas enters among liquid bath by escape pipe, and after water absorption
Outlet.
When crystal growth, crystal growth condition is observed through furnace chamber, and in this, as the foundation of setting crystal growth program.
Preparation-obtained yag crystal without cracking, bubble, be mingled with, scatter the defects of, diameter reaches 60mm, etc.
Electrical path length 150mm has reached good long brilliant effect.
Embodiment 3.
Using above-mentioned crystal growing apparatus, the quartzy furnace of internal diameter 600mm is fixed with pedestal, top cover respectively, and will
Escape pipe insertion fills in the liquid bath of water；First water inlet pipe, the first outlet pipe and pedestal are capable of forming cooling water circulation and maintain bottom
Seat heat dissipation；Second water inlet pipe, the second outlet pipe and top cover are capable of forming cooling water circulation and maintain top cover heat dissipation；By 10kg germanium crystal
Raw material is packed into the graphite crucible that diameter is 100mm, and opens zirconium oxide heater；During the heating method of zirconium oxide heater is
Frequency induction heating.5N argon gas is passed through from air inlet to furnace cavity bottom；After maintaining 2h, power supply is opened, into long brilliant program, from air inlet
Mouth is passed through 5N helium to furnace cavity bottom；Tail gas enters among liquid bath by escape pipe, and the outlet after water absorption.
When crystal growth, crystal growth condition is observed through furnace chamber, and in this, as the foundation of setting crystal growth program.
Preparation-obtained germanium crystal without cracking, bubble, be mingled with, scatter the defects of, diameter reaches 50mm, etc. electrical path lengths
500mm has reached good long brilliant effect.
The utility model crystal growing apparatus significantly simplifies the structure of furnace chamber, and the same furnace chamber can be used for growing difference
The crystal of size also reduces the cost of crystal growth, can be realized good long brilliant effect.
Although for illustrative purposes, preferred embodiments of the present invention are had been disclosed, but the common skill of this field
Art personnel will realize the situation of the scope of the utility model and spirit disclosed in not departing from by appended claims
Under, various improvements, additions and substitutions are possible.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821279838.9U CN208791811U (en) | 2018-08-09 | 2018-08-09 | crystal growth device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821279838.9U CN208791811U (en) | 2018-08-09 | 2018-08-09 | crystal growth device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110820043A (en) * | 2018-08-09 | 2020-02-21 | 广东先导稀材股份有限公司 | Crystal growth apparatus and growth method |
| CN110904510A (en) * | 2019-11-01 | 2020-03-24 | 中国电子科技集团公司第十一研究所 | Single crystal furnace for InSb crystal growth |
| CN111850675A (en) * | 2019-04-30 | 2020-10-30 | 上海新昇半导体科技有限公司 | A semiconductor crystal growth apparatus and method |
-
2018
- 2018-08-09 CN CN201821279838.9U patent/CN208791811U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110820043A (en) * | 2018-08-09 | 2020-02-21 | 广东先导稀材股份有限公司 | Crystal growth apparatus and growth method |
| CN111850675A (en) * | 2019-04-30 | 2020-10-30 | 上海新昇半导体科技有限公司 | A semiconductor crystal growth apparatus and method |
| CN110904510A (en) * | 2019-11-01 | 2020-03-24 | 中国电子科技集团公司第十一研究所 | Single crystal furnace for InSb crystal growth |
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