CN209039630U - The monocrystal growing furnace of the high-purity germanium single crystal of Grown by CZ Method - Google Patents

Abstract

The monocrystal growing furnace of the high-purity germanium single crystal of Grown by CZ Method is related to a kind of crystal growth furnace apparatus, the especially single crystal furnace equipment of the high-purity germanium single crystal of Grown by CZ Method.Graphite piece is mounted on outside Quartz stove tube by the monocrystal growing furnace of the high-purity germanium single crystal of Grown by CZ Method, and is sealed against by quartzy insulation ring package, is reconfigured corresponding radio-frequency induction coil and is surrounded on outside Quartz stove tube；Wherein, Quartz stove tube is divided into two sections, and upper section hollow cylinder inner cavity is greater than lower section hollow cylinder inner cavity；The quartz supports part is divided into two parts, and a part is set in Quartz stove tube, and another part is set to outside Quartz stove tube, supports graphite piece and quartzy insulation ring.The structure of the utility model reduces component produced pollution source, and then the quality level of elevating ultrahigh pure germanium monocrystalline, to ensure that the uniformity of heat transfer in crystal growing process, and extends the service life of graphite piece.

Description

The monocrystal growing furnace of the high-purity germanium single crystal of Grown by CZ Method

Technical field

The utility model relates to the single crystal growing furnaces of a kind of crystal growth furnace apparatus, the especially high-purity germanium single crystal of Grown by CZ Method to set It is standby.

Background technique

Vertical pulling method (CZ) is also known as Czoncharlski method, is that J. Czochralski is pioneering in 1916.Advantage is that crystal is drawn Liquid level is not contacted with wall out, and receptor does not limit, therefore stress is smaller in crystal, while can prevent wall from staiing or contacting again The mixed and disorderly nucleus that may cause and form polycrystal.Vertical pulling method is with the seed crystal of orientation for growth nucleus, thus available There is the monocrystal of certain crystal orientation growth.Monocrystal integrality made of vertical pulling method is preferable, and diameter and length can be very big, growth Rate is also higher, it is desirable that crucible used must be made of the material of not contaminated melt.

The technique of vertical pulling method (CZ) Ge mono crystal growth can be divided into following several stages: 1, melt at present, by the germanium in crucible Polycrystal material all melts；2, seeding preheats after putting down seed crystal, is allowed to after coming into full contact with germanium melt, and seed crystal is lifted upwards, Control in-furnace temperature crystallizes germanium melt on seed crystal；3, necking down, it is therefore intended that the heat eliminated in germanium single crystal growth is answered Power reduces the dislocation density of crystal；4, shouldering: make growing germanium crystal to the size of required diameter by control pulling rate and temperature； 5, isometrical: germanium single crystal being made to keep columnar growth by required diameter；6, it finishes up: by germanium single crystal reduced diameter, finally in circle Taper, it is oppositely extending to avoid dislocation.

The single crystal growing furnace of existing 13N ultrahigh-purity germanium mono-crystal, graphite heater are packaged in quartz ampoule boiler tube, in graphite plus Heat, during growing germanium single crystal, the molecule that graphite distributes is possible to pollute germanium single crystal, and influences high-purity germanium single crystal Electric parameters, therefore this structure is unfavorable for preparing the germanium single crystal of high-performance and high standards.

Summary of the invention

The utility model is directed to above-mentioned problem, proposes a kind of follow-on Grown by CZ Method 13N ultrahigh-purity germanium mono-crystal Single crystal furnace equipment.

The monocrystal growing furnace of the high-purity germanium single crystal of the Grown by CZ Method of the utility model, including Quartz stove tube, silica crucible, stone Black part, quartzy insulation ring and quartz supports part, it is characterised in that graphite piece is mounted on outside Quartz stove tube, and by quartzy insulation ring Package is sealed against, and is reconfigured corresponding radio-frequency induction coil and is surrounded on outside Quartz stove tube；

Wherein, Quartz stove tube is divided into two sections, and upper section hollow cylinder inner cavity is greater than lower section hollow cylinder inner cavity；

The quartz supports part is divided into two parts, and a part is set in Quartz stove tube, and another part is set to stone Outside English boiler tube, graphite piece and quartzy insulation ring are supported.

The vertical pulling method 13N ultrahigh-purity germanium mono-crystal of the utility model grows furnace apparatus, and graphite piece is retrofitted to outside Quartz stove tube Face, and graphite piece is sealed in the vacuum in quartzy insulation ring, reduce in germanium single crystal growth because air enters Impurity generates in the oxidation of germanium single crystal raw material caused by furnace and air, avoids to pollution caused by germanium single crystal, improves The quality of germanium single crystal.

Meanwhile by being optimized and revised to system of bf body, changes the structure of furnace chamber, reduce Ge mono crystal growth main region Volume, and install radio-frequency induction coil additional on a graphite piece, solve heat conduction problem, improve heat conduction efficiency, guaranteeing germanium While monocrystalline quality, energy consumption and cost are reduced to the greatest extent.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of existing Ge mono crystal growth furnace；

The structural schematic diagram of the position Fig. 2 the utility model Ge mono crystal growth furnace.

Wherein, Quartz stove tube 1, graphite piece 3, quartzy insulation ring 4, quartz supports part 5, radio-frequency induction coil 6.

Specific embodiment

The utility model is described in further detail in the following with reference to the drawings and specific embodiments.

Embodiment 1: existing HpGe monocrystal growing furnace shown in FIG. 1, graphite piece 3 and quartzy insulation ring 4 are in list In the thermal field atmosphere of crystals growth, and English insulation ring 4 when growing germanium single crystal at high temperature, can not be kept away without fully wrapped around graphite piece 3 The meeting exempted from releases fine particle and generates pollution to Ge mono crystal growth environment to influence the quality of germanium single crystal.

The HpGe monocrystal growing furnace of the utility model, graphite piece 3 has been mounted on 1 outside of Quartz stove tube, and is protected by quartz Temperature 4 fully wrapped around graphite pieces 3 of circle are sealed against, and are reconfigured corresponding radio-frequency induction coil 6 and are surrounded on outside Quartz stove tube 1.

In order to increase heat conduction efficiency, the shape of the Quartz stove tube 1 of the utility model is also improved, by original circle Cylindrical inner cavity is improved to T-shaped inner cavity.1 inner cavity of Quartz stove tube is set to be divided into two sections, upper section hollow cylinder inner cavity is greater than lower section Hollow cylinder inner cavity, two sections of inner cavities are using cambered surface connection sealing, so that the inner cavity of lower section is less than original Quartz stove tube inner cavity, this The improvement of kind structure, improves heat transfer and utilization rate, can reduce energy consumption and cost to the greatest extent.

Further, since the lower section inner cavity of Quartz stove tube 1 reduces, therefore quartz supports part 5 is also improved.Quartz is propped up Support member 5 is divided to for two parts, and a part is set in Quartz stove tube 1, another for changing the thermal field of 1 inner cavity of Quartz stove tube Part is set to outside Quartz stove tube 1, is used to support graphite piece 3 and quartzy insulation ring 4.

The utility model protects graphite piece 3 and quartz by the contour structures of change quartz supports part 5 and Quartz stove tube 1 Temperature circle 4 moves on to the outside of Quartz stove tube 1, eliminates both parts produced pollution source to be isolated, and then elevating ultrahigh is pure The quality level of germanium single crystal to ensure that the uniformity of heat transfer in crystal growing process, and extends making for graphite piece Use the service life.

The above is only a kind of embodiments of the utility model, as long as having used structures described above, should all drop into In the protection scope of the utility model.

Claims (1)

1. the monocrystal growing furnace of the high-purity germanium single crystal of Grown by CZ Method, including Quartz stove tube, silica crucible, graphite piece, quartz heat preservation Circle and quartz supports part, it is characterised in that graphite piece is mounted on outside Quartz stove tube, and is sealed against by quartzy insulation ring package, Corresponding radio-frequency induction coil is reconfigured to be surrounded on outside Quartz stove tube；

Wherein, Quartz stove tube is divided into two sections, and upper section hollow cylinder inner cavity is greater than lower section hollow cylinder inner cavity；

The quartz supports part is divided into two parts, and a part is set in Quartz stove tube, and another part is set to quartzy furnace Outside pipe, graphite piece and quartzy insulation ring are supported.