CN105951172A - Manufacturing method of N type/P type monocrystalline silicon crystal ingot - Google Patents
Manufacturing method of N type/P type monocrystalline silicon crystal ingot Download PDFInfo
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- CN105951172A CN105951172A CN201610364924.9A CN201610364924A CN105951172A CN 105951172 A CN105951172 A CN 105951172A CN 201610364924 A CN201610364924 A CN 201610364924A CN 105951172 A CN105951172 A CN 105951172A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention provides a manufacturing method of an N type/P type monocrystalline silicon crystal ingot. During the lifting growth of the crystal ingot, monocrystalline silicon strips containing uniform distribution opposite type conducting elements (sub doping elements) are molten through laser arrays; the sub doping elements are added into the flux in a continuous and adjustable way; carriers increased in the crystal ingot due to the fast rise of the concentration of main doping elements in flux caused by dephlegmation are counteracted, so that the problem of fast reduction of the electrical resistivity in a late growth stage of the crystal ingot growth is solved. By precisely controlling the addition quantity and the addition speed of the sub doping elements, the carrier density in the crystal ingot in a new crystallization region is stabilized, so that the electrical resistivity of the new crystallization region is stabilized; the fluctuation amplitude of the axial electrical resistivity of the whole crystal ingot is reduced; the utilization rate of the crystal ingot and the electric performance of wafers are improved.
Description
Technical field
The present invention relates to semi-conducting material crystal growth and element doping field, be specifically related to boron, high resistance that phosphorus is co-doped with
The doping of monocrystal silicon and growing method.
Background technology
Recently as the development of great scale integrated circuit, the application of power device is more and more wider.Power device
Be mainly characterized by high pressure resistant, the resistance of substrate is very big for the impact of device performance, therefore it is required that the resistivity of substrate is high and
Change in resistance is little.Owing to doped chemical is not mated with element silicon lattice, during monocrystalline silicon growing, there is Segregation, i.e.
Doped chemical crystallizes the concentration in single crystal silicon ingot less than the concentration in melt (raw material) so that doped chemical is in crucible
Concentration constantly raises, so that the concentration of doped chemical the most constantly raises in single crystal silicon ingot, causes single crystal silicon ingot growth end
Phase doped chemical concentration drastically raises, and carrier density significantly raises, and crystal ingot resistivity drastically declines, the axial resistance of crystal ingot
Rate variable gradient is bigger.Change in resistance rate gradient is required more and more in recent years along with electronic devices and components especially power device
Little, the change reducing resistivity by changing doping way becomes extremely important.
In order to solve this difficult problem, the three races contrary by doping two kinds or two or more conductivity and five impurity units of race
Element, in order to regulate the change of resistivity, reduces change in resistance.The group iii elements being used as impurity element mainly has boron, aluminum, gallium
Deng, group-v element commonly uses phosphorus as adulterant.Patent CN 103282555 A and CN 103046130 A, it is simply that by primary
In silicon melt, addition phosphorus is as suppression element, thus reduces the change in resistance caused due to segregation, it is achieved that resistivity
Reduce.
Above-mentioned two patent is all to be added simultaneously in silica crucible carry out by major and minor dopant elements and polycrystalline silicon raw material
Heat up fusing, in the actual production process of crystal, adds secondary doped chemical in the initial charge stage, no doubt can be relatively in early stage
Small resistor rate rate of change, but the later stage change in resistance can be made on the contrary to strengthen further.Because as mixing of carrier supplier
Miscellaneous element, except boron is k relative to the segregation coefficient of siliconB=0.7, the segregation coefficient of remaining doped chemical phosphorus is kP=0.3, and sow
Segregation coefficient be only kG=0.008, in crystal growth initial stage, in melt, the content of main doped chemical is much larger than pair doping
The content of element, along with the growth of silicon single crystal, causes the speed difference that major and minor doped chemical concentration raises because of fractional condensation in silicon melt
The most increasing, the middle and late stage in crystal ingot growth can cause the rising of resistivity anomaly, it is seen that adds secondary doped chemical too early also
It not preferable.Additionally, in actual production, be difficult to the content of test doped chemical, especially P elements and be prone to volatilization so that
Resistivity cannot change according to mix designs, it is easy to causes resistivity to deviate desired value.
Patent CN200910152971 under vacuum or argon shield, melting polysilicon, gallium is fused in melted silicon formed
Mix gallium silicon solution, grow czochralski silicon monocrystal, in crystal growing process, when crystal resistivity 1.2-1.0 Ω cm time
Wait, mix incorporation phosphorus in gallium silicon solution, continued growth after the silicon solution that formation phosphorus, gallium are co-doped with so that the resistance of crystal to remaining
Rate is regulated and controled again to 3.0 Ω cm, stops growing when crystal curing degree reaches 80～90%, obtains the silicon of predetermined resistivity
Crystal.Patent CN201510028140 disclose " dopant source material can be shaped as such as bar shaped, cylinder, vertebral body or
Pyramid.Dopant source material 125 can also be by the multiple single dopant source with a shape or difform combination
Block is made.But doping can not accurately control.
In order to overcome the deficiency of above-mentioned patent, patent CN102912424B reports a kind of raising axial resistivity of monocrystal silicon
The method of uniformity, by the method for gas phase doping hydrogen phosphide during isometrical, improves the axial resistivity evenness of monocrystal silicon.
But during gas phase doping, argon Flow Velocity is fast, flow big, and impurity gas utilization rate is low and doped chemical is difficult to effectively incorporate
In silicon melt, thus limited in one's ability to resistivity undulated control axial in silicon ingot.Even when doping content is higher, due to inertia
Hydrogen phosphide is difficult to uniformly dilute by gas, causes causing monocrystal silicon because local impurity gas concentration is excessive in czochralski silicon monocrystal
Transoid.Therefore, the method is only suitable to the photovoltaic solar cell use that resistivity is relatively low.Additionally, phosphine gas is poisonous
Gas, safety extreme difference, use high with processing cost, poor operability.
For the deficiencies in the prior art, this application provides a kind of N-type/p-type monocrystalline grown by Czochralski method
The manufacture method of silicon ingot, the silicon chip resistivity obtained is higher；And by crystal isometrical during continuously adjustable interpolation
Silicon-phosphorus/silicon-boron alloy, controls the axial change in resistance of monocrystal silicon.
Summary of the invention
The invention provides the manufacture method of a kind of N-type/p type single crystal silicon crystal ingot, using, Czochralski method lifting is raw
During long single crystal silicon ingot, in crucible, add the secondary doped chemical of films of opposite conductivity the most continuously, offset because dividing
Coagulate the quickly rising of main doped chemical concentration in the melt caused and make carrier in crystal ingot increase, thus solve to grow at crystal ingot
Latter stage resistivity rapid decrease problem, it is achieved control silicon ingot change in resistance purpose.First by accurately controlling pair doping
The addition of element and adding rate, stablize the carrier density in new crystal region crystal ingot, with the resistance of stably new crystal region
Rate, reduces whole crystal ingot axial resistivity fluctuating margin, improves crystal ingot utilization rate and wafer electricity performance quality.
Further, described main doped chemical is III A/ V A race element, and preferably boron element/P elements, mainly at silicon ingot
Middle offer cavity type/electron type carrier so that it is embody p-type/N-type semiconductor characteristic.
Further, described secondary doped chemical is the element contrary with main doped chemical conductivity.Main in silicon ingot
There is provided inversion carriers so that it is the carrier produced with main doped chemical neutralizes, formed hole-electron to and settle out.From
And reduce carrier density, improve resistivity.
Further, the adding rate of secondary doped chemical is decided by the percent crystallization in massecuite of melt, i.e. weighs with the real-time of grown crystal
Amount is relevant.Along with the continuous crystallization of melt, the main doped chemical concentration remained because of fractional condensation in melt gradually rises, and then causes
The crystal ingot region main doped chemical concentration of new crystallization raises, and carrier concentration increases, and resistivity reduces.Curing degree is the highest, residue
Melt the fewest, the main doped chemical of residual is the most, thus the amount of required secondary doped chemical is also because suitably increasing.Thus pair is mixed
The addition of miscellaneous element is decided by the curing degree of melt.
Further, it is contemplated that segregation coefficient, preferably boron, the most major and minor doped chemical of phosphorus.
The manufacture method of a kind of N-type/p type single crystal silicon crystal ingot that the present invention provides, the present invention also provides for a kind of boron, phosphorus is co-doped with
Monocrystalline silicon growing and manufacture method, it is characterised in that during Czochralski method single crystal silicon ingot pulling growth,
1) use Czochralski method to prepare silicon single crystal rod, polycrystalline silicon raw material and main doped chemical are put in silica crucible；
2) silicon rod of Uniform Doped pair doped chemical is placed on the graphite or alumina holder being fixed in long crystal furnace；
3) frame bottom connects quartz flat board, and silicon rod melts on quartz flat board, instills in silicon melt along flat board；
4) diode laser matrix is placed in long crystal furnace top, and laser is just irradiated to the bottom of silicon rod；
5) power of diode laser matrix is adjustable between 5-50W；
6) optical maser wavelength that diode laser matrix is used is at 600nm-900nm.
Further, the monocrystalline that the silicon single crystal rod of described Uniform Doped pair doped chemical can be grown by Czochralski method method
Silicon ingot processing and obtain, the scope of its average resistivity should be 0.2 Ω cm ~ 50 Ω cm.The profile of silicon single crystal rod can be circle
Cylindricality or side's bar shaped.
Further, the isometrical stage determines the time point adding secondary doped chemical phosphorus according to the relation of curing degree Yu resistivity.
Different to the requirement of silicon chip substrate resistance rate according to different power devices, sustainable addition.
Further, according to the weight of single crystal silicon ingot growth, scalable laser power size, the fusing amount of control and then reality
Now the continuous effective of secondary doped chemical addition is controlled.
Further, diode laser matrix irradiation hot spot is adjustable, it is ensured that during whole long crystalline substance, silicon rod persistently melts.
Further, the interpolation quantity of secondary doped chemical is to obtain according to following relation:
1) concentration C of main doped chemical atom in a certain moment silicon single crystalm=Cm0×(1-S)km-1, wherein curing degree S refers to crystallization
The quality of silicon is relative to the ratio of the gross mass of raw material silicon, Cm0During for primary crystallization, the concentration of main doped chemical atom in crystal,
Cm0=km×Cml0, Cml0Being main doped chemical atom initial concentration in the melt, unit is atoms/cm3, kmIt it is main doping unit
The segregation coefficient of element；
2) resistivity R of the silicon single crystal that main doped chemical causesm=(ρ×αm)/Cm, αmFor empirical value, span be 1E14 ~
5E15 Ω cm atoms/g, ρ=2.33g/cm3For monocrystal silicon density；
3) resistivity R of the silicon single crystal that a certain moment pair doped chemical causesa=(ρ•αa)/Ca, αaFor empirical value, span is
1E14~5E15Ω•cm•atoms/g；
4) concentration C of secondary doped chemical atom in a certain moment silicon metala=ka•Cal, CalFormer for doped chemical secondary in now melt
Sub-concentration, kaSegregation coefficient for secondary doped chemical；
5)Cal=ρ×Nal/Ml=ρ×(Na-Nai)/(M-Mi), NalFor the secondary doped chemical atomic quantity in now melt, NaFor always
The secondary doped chemical total atom number added altogether, NaiFor the secondary doped chemical atomic quantity in now crystal, MlFor now melt
Quality, M is the gross mass of raw material silicon, MiQuality for now silicon metal；
6) quantity N of secondary doped chemical atom in silicon metalai=∫0 S ka×CaldS；
7) resistivity R=R of a certain moment silicon metalm-Ra。
P-type/n type single crystal silicon that resistivity is high and change in resistance is little, axial resistance can be obtained by above manufacture method
Rate fluctuation is less than 20 Ω cm, so that this monocrystalline silicon piece can meet the requirement of most of power device.
Accompanying drawing explanation
Fig. 1 is single crystal silicon ingot growth furnace schematic diagram.1-diode laser matrix；2-graphite holders fixing device；3-stone
Ink support；4-primary heater；5-heat shielding；6-silica crucible and graphite crucible；7-silicon melt；8-laser beam.
Fig. 2 is secondary doped chemical material-feeding rack schematic diagram.22-molybdenum is followed closely；The monocrystalline silicon strip of 23-pair doped chemical；24-quartz
Plate；25-Al2O3Plate.
Fig. 3 is the schematic diagram of the monocrystalline silicon strip of secondary doped chemical.The otch that 26-fixes for molybdenum nail.
Detailed description of the invention
Specifically, the present invention provides a kind of single crystal silicon ingot and manufacture method, uses general Czochralski method list
Crystal silicon growth furnace, the purity of polycrystalline silicon raw material reaches 11N or higher, i.e. integrated circuit level polysilicon raw material, boron element/P elements
Major-minor doped chemical each other, boron element and P elements are the usual impurities in pulling of silicon single crystal.Before temperature increasing for melting materials, disposably will mix
The polysilicon having main doped chemical adds in silica crucible, and the technique such as evacuated, temperature increasing for melting materials, seeding, necking down enters crystal
Growth course.After entering shouldering process, utilize laser to the rod shape raw material that the silicon ingot of the secondary doped chemical of fusing doping makes,
According to the percent crystallization in massecuite of melt, regulate laser power, adjust secondary doped chemical and add the quantity of melt, until whole crystal growth work
Skill terminates.The crystal ingot grown, through cutting, sampling and testing, analyzes crystal ingot axial resistivity distribution situation.
Embodiment 1
Use the n type single crystal silicon rod in 8 inches of<100>directions of czochralski-grown.120Kg is added many in silica crucible
Crystal silicon raw material and main doped chemical phosphorus, the initial concentration of phosphorus is 8E13atoms/cm3.Guarantor at noble gas (usually argon)
Protect down, open heater and be progressively warmed up to more than 1420 DEG C raw material is completely melt.
According to the conventional seeding of Czochralski method monocrystalline silicon growing, necking down, shouldering, turn the technique isometrical lifes of entrance such as shoulder
Growth process.Be the p type single crystal silicon crystal bar of 0.3 Ω cm from diameter 300mm, resistivity, diametrically cut out a 20mm ×
The monocrystalline silicon strip of 20mm × 200mm.Owing to doped chemical boron is distributed concentration deviation along crystal growth direction, and in diametric(al)
Being equally distributed, the most this sampling mode ensure that the quality with the n type single crystal silicon bar of fusing of adding of boron element becomes
Direct ratio, it is ensured that the controllability that boron element adds.
Rack body is the graphite rod of a diameter 40mm, and upper end is weldingly fixed on long crystal furnace shell, under graphite rod
End has a diameter 32mm, the hole of degree of depth 40mm, and the monocrystalline silicon strip being uniformly distributed boron element is fixed in hole with molybdenum nail.Equipped with
The graphite rod of monocrystalline silicon strip passes heat shielding, is placed in the upper cavity of long crystal furnace, and aluminium oxide flat board is fixed in above heat shielding, in order to
Support graphite rod.The bottom of aluminium oxide flat board connects has a quartz plate, doped with boron element silicon single crystal rod to melt on quartz plate
Afterwards, can instill in silica crucible along quartz plate.
Take αm=3.52E14 Ω cm atoms/g, αa=3.96E15 Ω cm atoms/g, initial time, laser power is
Being set as 50W, grow 1Kg according to single crystal silicon ingot, the speed of fusing 1.7mm P-type silicon bar adds boron element in melt, after
Continue and measured the instantaneous weight of crystal ingot by LOAD CELLS, the power of regulation laser array, control the melting rate of P-type silicon bar.
When the N-type silicon ingot weight grown is 104Kg, proceed by ending.After cooling down, crystal ingot gross weight is called
111Kg。
To crystal ingot cutting and sample, testing its resistivity, the head resistivity of isometrical section of crystal ingot is 73 Ω
Cm, along the direction of crystal growth, the resistivity at the position of crystal ingot 80Kg becomes 90 Ω cm, and at the afterbody electricity of isometrical section
Resistance rate becomes 70 Ω cm.After this means to remove head and afterbody, the monocrystalline silicon piece obtained by the method can obtain whole profit
With.
Completing the silicon single crystal different parts sampling of growth, wafer is the side being perpendicular to the central shaft during crystal growth
Formula cuts into what section obtained, uses four probe resistance rate instrument test resistance rate size and distributions.Analysis shows, crystal ingot is at 80kg
In the past, the speed that the speed that in silicon ingot, P elements concentration raises raises less than boron element, along with the increase of crystal curing degree, formed
Electron-hole pair quantity increase so that resistivity raise.Hereafter, owing to P elements segregation coefficient is little, boron element segregates
Coefficient is big, causes P elements concentration in melt drastically to raise, and then causes the speed that in silicon ingot this moment, P elements concentration raises
The speed that rate raises more than boron element, so that resistivity reduces.By the most persistently adding secondary adulterant boron, and according to knot
The amount that the secondary adulterant of the change of crystalloid amount in real time regulation adds, early stage slows down the speed that resistivity raises, later stage suppression resistivity
The speed reduced, thus reduce axial resistivity fluctuating margin and gradient.
Embodiment 2
Use the p type single crystal silicon rod in 8 inches of<100>directions of czochralski-grown.120kg is added many in silica crucible
Crystal silicon raw material and boron, the initial concentration of boron is 1.78E14 atoms/cm3.Under the protection of noble gas (usually argon),
Open heater to be progressively warmed up to more than 1420 DEG C raw material is completely melt.
Carry out seeding, shouldering, turn shoulder according to conventional crystalline growth parameter(s), enter the isometrical stage.From diameter 300mm, resistance
Rate is on the p-doped monocrystalline silicon crystal bar of 20 Ω cm, diametrically cuts out the monocrystalline silicon strip of one 20mm × 20mm × 250mm, Gu
On support, as the source of secondary doped chemical.Curing degree be 0.4 namely crystal weight is 48kg time, open laser
Array, power is set to 50W, and the monocrystalline silicon strip of fusing 0.46cm, now the phosphorus atom concentration in melt is 7.52E13atoms/
cm3So that the phosphorus atom concentration in silicon single crystal is 2.26E13 atoms/cm3.The follow-up wink being measured crystal ingot by LOAD CELLS
Shi Chongliang, the power of regulation laser array, control the melting rate of monocrystalline silicon strip.When the N-type silicon ingot weight grown is
During 104Kg, proceed by ending.After cooling down, crystal ingot gross weight is called 111Kg.
Taking silicon chip according to the mode of embodiment 1 and carry out resistivity measurement, the head resistivity of isometrical section of crystal ingot is 73 Ω
Cm, along the direction of crystal growth, the resistivity in the front adding phosphorus becomes 68 Ω cm, adds resistance at the node of phosphorus
Rate is rapidly increased to again 75 Ω .cm, and becomes 70 Ω cm the afterbody resistivity of isometrical section.Electrical resistivity range is 68-75 Ω
Cm, after removing head and afterbody, the monocrystalline silicon piece obtained by the method can obtain all of.
Comparative example 1
Use the n type single crystal silicon crystal ingot in 8 inches of<100>directions of czochralski-grown.In silica crucible, add 120kg contain
Having the integrated circuit level polysilicon raw material of P elements, in raw material, the initial concentration of P elements is 8E13 atoms/cm3Do not introduce boron
Element.
In the same manner as in Example 1 to crystal ingot cutting sampling and testing resistivity, the head resistivity of isometrical section of crystal ingot is 51 Ω
Cm, along the direction of crystal growth, becomes 0.28 Ω cm the afterbody resistivity of isometrical section.Crystal ingot resistivity differences end to end is high
Reaching 50 Ω cm, crystal ingot axial resistivity fluctuation gradient is big, and ingot quality is poor, utilization rate is low.
Comparative example 2
Use the p type single crystal silicon rod in 8 inches of<100>directions of czochralski-grown.120kg is added many in silica crucible
Crystal silicon raw material and boron, the initial concentration of boron is 1.78E14 atoms/cm3, do not introduce P elements.
The silicon chip having taken the isometrical top of crystal ingot and afterbody according to the mode of embodiment 2 carries out resistivity measurement, and resistivity is divided
Not being 73 Ω cm and 32 Ω cm, crystal ingot resistivity differences end to end is up to 40 Ω cm, and the utilization rate of monocrystalline silicon piece is substantially reduced.
Claims (5)
1. the manufacture method of N-type/p type single crystal silicon crystal ingot, it is characterised in that during single crystal silicon ingot pulling growth,
By the laser array of power adjustable, the monocrystalline silicon strip being uniformly distributed secondary doped chemical is constantly melted, continue adjustable to melt
Add secondary doped chemical, grow axial resistivity fluctuation N-type/p type single crystal silicon crystal ingot less than 20 Ω cm, secondary doped chemical
Interpolation quantity be to obtain according to following relation:
The concentration C of main doped chemical atom in a certain moment silicon single crystalm=Cm0×(1-S)km-1, wherein curing degree S refers to silicon metal
Quality relative to the ratio of the gross mass of raw material silicon, Cm0For the concentration of doped chemical atom main in crystal during primary crystallization, Cm0=km
×Cml0, Cml0Being main doped chemical atom initial concentration in the melt, unit is atoms/cm3, kmIt it is dividing of main doped chemical
Solidifying coefficient；
Resistivity R of the silicon single crystal that main doped chemical causesm=(ρ×αm)/Cm, wherein, ρ is monocrystal silicon density；
Resistivity R of the silicon single crystal that a certain moment pair doped chemical causesa=(ρ•αa)/Ca；
The concentration C of secondary doped chemical atom in a certain moment silicon metala=kaCal, wherein, CalFor doped chemical secondary in now melt
Atomic concentration, kaSegregation coefficient for secondary doped chemical；
Cal=ρ×Nal/Ml=ρ×(Na-Nai)/(M-Mi), wherein, NalFor the secondary doped chemical atomic quantity in now melt, Na
For the secondary doped chemical total atom number altogether added, NaiFor the secondary doped chemical atomic quantity in now crystal, MlFor now melting
The quality of body, M is the gross mass of raw material silicon, MiQuality for now silicon metal；
Quantity N of secondary doped chemical atom in silicon metalai=∫0 S ka×CaldS；
Resistivity R=R of a certain moment silicon metalm-Ra。
The manufacture method of N-type the most according to claim 1/p type single crystal silicon crystal ingot, it is characterised in that in described formula be
Number αmSpan be 1E14 ~ 5E15 Ω cmatoms/g, αaSpan is 1E14 ~ 5E15 Ω cmatoms/g.
The manufacture method of N-type the most according to claim 1/p type single crystal silicon crystal ingot, it is characterised in that described mixes containing pair
The monocrystalline silicon strip average resistivity of miscellaneous element is in the range of 0.2 Ω cm ~ 50 Ω cm.
The manufacture method of N-type the most according to claim 1/p type single crystal silicon crystal ingot, it is characterised in that described contains pair
The monocrystalline silicon strip of doped chemical, is fixed on graphite rod lower end by molybdenum nail；Graphite rod upper end is welded on long crystal furnace shell, and lower end is worn
Cross heat shielding, be placed in the upper cavity of long crystal furnace；Aluminium oxide flat board is fixed in above heat shielding, in order to support graphite rod；Aluminium oxide
The bottom of flat board connects a quartz plate, after the monocrystalline silicon strip containing secondary doped chemical melts on quartz plate, and Ke Yiyan
Quartz plate to instill in silica crucible.
5. according to the manufacture method of the N-type described in any one of claim 1-4/p type single crystal silicon crystal ingot, it is characterised in that described
Laser array is diode laser matrix, and the power of diode laser matrix is adjustable between 5-50W, and wavelength is at 600nm-
900nm, laser array direction is adjustable.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109505005A (en) * | 2018-12-26 | 2019-03-22 | 徐州鑫晶半导体科技有限公司 | Prepare the method and single crystal growing furnace of N-shaped monocrystalline silicon |
| CN112831828A (en) * | 2021-01-07 | 2021-05-25 | 杭州晶宝新能源科技有限公司 | Growth method of gallium-doped Czochralski monocrystalline silicon, gallium-doped monocrystalline silicon and application |
| CN113882015A (en) * | 2021-09-29 | 2022-01-04 | 西安奕斯伟材料科技有限公司 | Nitrogen-doped agent feeding device and method and manufacturing system of nitrogen-doped silicon single crystal rod |
| CN116168788A (en) * | 2023-04-25 | 2023-05-26 | 北京大学 | Method and system for analyzing segregation coefficient of molten liquid silicon based on big data |
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| CN109505005A (en) * | 2018-12-26 | 2019-03-22 | 徐州鑫晶半导体科技有限公司 | Prepare the method and single crystal growing furnace of N-shaped monocrystalline silicon |
| CN112831828A (en) * | 2021-01-07 | 2021-05-25 | 杭州晶宝新能源科技有限公司 | Growth method of gallium-doped Czochralski monocrystalline silicon, gallium-doped monocrystalline silicon and application |
| CN113882015A (en) * | 2021-09-29 | 2022-01-04 | 西安奕斯伟材料科技有限公司 | Nitrogen-doped agent feeding device and method and manufacturing system of nitrogen-doped silicon single crystal rod |
| CN116168788A (en) * | 2023-04-25 | 2023-05-26 | 北京大学 | Method and system for analyzing segregation coefficient of molten liquid silicon based on big data |
| CN116168788B (en) * | 2023-04-25 | 2023-08-11 | 北京大学 | Method and system for analyzing segregation coefficient of molten liquid silicon based on big data |
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