CN202131395U - Doping device for producing single crystal silicon in straight pull method - Google Patents
Doping device for producing single crystal silicon in straight pull method Download PDFInfo
- Publication number
- CN202131395U CN202131395U CN201120245224U CN201120245224U CN202131395U CN 202131395 U CN202131395 U CN 202131395U CN 201120245224 U CN201120245224 U CN 201120245224U CN 201120245224 U CN201120245224 U CN 201120245224U CN 202131395 U CN202131395 U CN 202131395U
- Authority
- CN
- China
- Prior art keywords
- single crystal
- crystal silicon
- doper
- pulling method
- method manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The utility model discloses a doping device for producing single crystal silicon in a straight pull method, which comprises a feeder, a fixing piece and an impacting device. The feeder is contained with doping agents needed to be added, the fixing piece is used for fixing the feeder on a seed crystal clamping head, and the impacting device drives the feeder to shake through an impacting heavy punch and enables the doping agents needed to be added to be automatically added into a quartz crucible. The seed crystal clamping head is fixed right under the heavy punch, the heavy punch is overhung on a lifting mechanism above a single crystal furnace auxiliary furnace chamber through pull ropes, the fixing piece is fixed on the seed crystal clamping head, the feeder is fixed on the fixing piece, and the impacting device is arranged on the outer side of the heavy punch. The doping device for producing single crystal silicon in the straight pull method is simple in structure, reasonable in design, convenient to process, manufacture and mount, simple and convenient to use and operate, good in using effect and capable of completing an automatic adding process of the doping agents in simple, convenient, fast and high-quality mode and can effectively resolve the problems that existing single crystal furnaces are inconvenient in doping agent adding and long in cost time of doping agent adding and affect production efficiency of single crystal silicon, accuracy of single crystal resistivity is affected caused by the easily-occurring fact that adding quantity of the doping agents is insufficient, and the like.
Description
Technical field
The utility model relates to a kind of doper, especially relates to a kind of vertical pulling method manufacture order crystal silicon and uses doper.
Background technology
Silicon single crystal is claimed silicon single-crystal again, is a kind of semiconductor material.Single crystal growing furnace is a kind of in inert gas environment, with graphite heater with polycrystalline materials such as polysilicon fusings, and with the equipment of Grown by CZ Method dislocation-free silicon single crystal.Adopt in the single crystal growing furnace manufacture order crystal silicon process,, just will select the suitable doping agent for use for drawing the silicon single-crystal of certain model and resistivity.The group-v element N type doping agent of making silicon single crystal commonly used mainly contains phosphorus, arsenic, antimony.The group iii elements P type doping agent of making silicon single crystal commonly used mainly contains boron, aluminium, gallium.In general, (resistivity is less than 10 to draw the low-resistivity monocrystalline
-2Ω cm), generally select the pure element doping agent for use.(resistivity is greater than 10 for the monocrystalline of drawing higher electric resistivity
-1Ω cm), generally select for use mother alloy to make doping agent.So-called " mother alloy " is exactly the alloy of impurity element and silicon.Mother alloy commonly used has two kinds of silicon phosphorus and silicon boron, the employing mother alloy do doping agent be for make doping control more easily, more accurate.
Nowadays at present; Employed single crystal growing furnace mainly comprises frame, crucible drive unit, main furnace chamber, flap valve, secondary furnace chamber, seed crystal rotation and lifting mechanism, fluid pressure drive device, vacuum system, towards argon system and water-cooling system, and existing single crystal growing furnace all is not provided for adding the doper of doping agent mostly.At present, when adopting single crystal growing furnace manufacture order crystal silicon, all be in loading furnace process, to add doping agent usually, specifically be after the quartz crucible of packing into and in quartz crucible, to pack into before the silicon material, doping agent is packed in the quartz crucible.Actual when adding doping agent, all be that artificial hand is worn dustless pure gloves the doping agent that need add is manually added in the quartz crucible usually, thereby it is lower to add efficient, and spended time is longer, influences the production efficiency of silicon single crystal.Simultaneously in the actual interpolation process; Technician to adding doping agent has relatively high expectations; Need in the whole disposable adding quartz crucibles of all doping agents; Partly fall situation otherwise doping agent can occur need adding, and corresponding meeting causes certain influence to the accuracy of monocrystalline resistivity in the quartz crucible outside.To sum up, existing single crystal growing furnace exist doping agent add inconvenience, spended time long, influence monocrystalline silicon production efficient, be prone to because of doping agent add-on deficiency and cause number of drawbacks and deficiencies such as monocrystalline resistivity accuracy affected.
The utility model content
The utility model technical problem to be solved is to above-mentioned deficiency of the prior art; Provide a kind of vertical pulling method manufacture order crystal silicon to use doper; It is simple in structure, reasonable in design, processing and fabricating and install to lay convenient and use easy and simple to handle, result of use good, can accomplish the automatic adition process of doping agent easy, fast and in high quality.
For solving the problems of the technologies described above; The technical scheme that the utility model adopts is: a kind of vertical pulling method manufacture order crystal silicon is used doper; It is characterized in that: comprise the hopper loader that is used for splendid attire and need adds doping agent, said hopper loader is fixed on the mounting block on the seed chuck and drives through the bump weight that said hopper loader rocks and make that needing to add doping agent add the percussion device in the quartz crucible automatically; Said seed chuck is fixed under the weight; Said weight is suspended on the shift mechanism that is positioned at the secondary furnace chamber of single crystal growing furnace top through stay cord; Said mounting block is fixedly mounted on the seed chuck and said hopper loader is fixedly mounted on the said mounting block, and said percussion device is positioned at the weight outside.
Above-mentioned a kind of vertical pulling method manufacture order crystal silicon is used doper; It is characterized in that: said percussion device is the flap valve that is laid in the perble range; Said perble range is laid between secondary furnace chamber of single crystal growing furnace and the single crystal growing furnace master furnace chamber, and said single crystal growing furnace master furnace chamber is positioned under the secondary furnace chamber of single crystal growing furnace.
Above-mentioned a kind of vertical pulling method manufacture order crystal silicon is used doper, it is characterized in that: said hopper loader is the metal ferrules on seed chuck of being fastened.
Above-mentioned a kind of vertical pulling method manufacture order crystal silicon is used doper, it is characterized in that: the circular lasso of said metal ferrules for being formed by an one metal wire bending.
Above-mentioned a kind of vertical pulling method manufacture order crystal silicon is used doper, it is characterized in that: said mounting block is for being bent to form by an one metal wire and being level to the metallic tines of laying.
Above-mentioned a kind of vertical pulling method manufacture order crystal silicon is used doper, it is characterized in that: said metallic tines and said circular lasso are connected to one.
Above-mentioned a kind of vertical pulling method manufacture order crystal silicon is used doper, it is characterized in that: said metallic tines and said circular lasso are formed by same one metal wire bending.
Above-mentioned a kind of vertical pulling method manufacture order crystal silicon is used doper, and it is characterized in that: said metal ferrules is sleeved on seed chuck top, and metal ferrules is level to laying.
Above-mentioned a kind of vertical pulling method manufacture order crystal silicon is used doper, it is characterized in that: said seed chuck top correspondence is provided with the circular groove that is used to mount metal ferrules.
Above-mentioned a kind of vertical pulling method manufacture order crystal silicon is used doper, it is characterized in that: said metallic tines and said circular lasso are formed by same molybdenum filament bending.
The utility model compared with prior art has the following advantages:
1, simple in structure, reasonable in design and input cost is low.
2, processing and fabricating is convenient, adopts a molybdenum filament and after bending, just can form metallic tines and metal ferrules.
3, laying is installed conveniently, during actual installation, a metal ferrules horizontal set that only needs to be bent to form and to have metallic tines gets final product on seed chuck top.
4, use is easy and simple to handle, during actual the use, only needs elder generation that need are added doping agent (being specially molybdenum alloy) and is placed on the metallic tines that has been in place; When needing to add doping agent; Only need weight to be transferred together with seed chuck together through the control pulling apparatus; And when weight drops to the perble range place between secondary furnace chamber of single crystal growing furnace and the main furnace chamber; The flap valve action of controlling afterwards in the perble range and corresponding is clashed into weight, and weight receives and clashes into the corresponding drive metallic tines in back and produce and rock, and adds in the quartz crucible thereby need are added doping agent.
5, result of use is good and practical value is high; Can be easy, accomplish the automatic adition process of doping agent fast and in high quality, and effectively solve doping agent that existing single crystal growing furnace exists add inconvenience, spended time long, influence monocrystalline silicon production efficient, be prone to because of doping agent add-on deficiency and cause number of drawbacks and deficiencies such as monocrystalline resistivity accuracy affected.
In sum; The utility model is simple in structure, reasonable in design, processing and fabricating and install to lay convenient and use easy and simple to handle, result of use good; Can be easy, accomplish the automatic adition process of doping agent fast and in high quality, and effectively solve doping agent that existing single crystal growing furnace exists add inconvenience, spended time long, influence monocrystalline silicon production efficient, be prone to because of doping agent add-on deficiency and cause number of drawbacks and deficiencies such as monocrystalline resistivity accuracy affected.
Through accompanying drawing and embodiment, the technical scheme of the utility model is done further detailed description below.
Description of drawings
Fig. 1 is the user mode reference drawing of the utility model.
Fig. 2 is the installation site synoptic diagram of the utility model metallic tines and circular lasso.
Description of reference numerals:
1-need add doping agent; The 2-seed chuck; The secondary furnace chamber of 3-single crystal growing furnace;
The 4-weight; The 5-quartz crucible; The 6-perble range;
The 7-flap valve; The 8-1-metal ferrules; The 8-2-metallic tines;
The 9-stay cord; 10-single crystal growing furnace master furnace chamber; The 11-seed crystal;
The 12-plumbago crucible.
Embodiment
Like Fig. 1, shown in Figure 2; The utility model comprises the hopper loader that is used for splendid attire and need adds doping agent 1, said hopper loader is fixed on the mounting block on the seed chuck 2 and drives through bump weight 4 that said hopper loader rocks and make that needing to add doping agent 1 adds the percussion device in the quartz crucible 5 automatically; Said seed chuck 2 is fixed under the weight 4; Said weight 4 is suspended on the shift mechanism that is positioned at the secondary furnace chamber of single crystal growing furnace 3 tops through stay cord 9; Said mounting block is fixedly mounted on the seed chuck 2 and said hopper loader is fixedly mounted on the said mounting block, and said percussion device is positioned at weight 4 outsides.
In the present embodiment, said percussion device is the flap valve 7 that is laid in the perble range 6, and said perble range 6 is laid between secondary furnace chamber 3 of single crystal growing furnace and the single crystal growing furnace master furnace chamber 10, and said single crystal growing furnace master furnace chamber 10 is positioned under the secondary furnace chamber 3 of single crystal growing furnace.Thereby in the actual use, the percussion device that flap valve 7 conducts that the utility model adopts single crystal growing furnace to carry are clashed into weight 4.
When actual installation was made, said hopper loader was be fastened metal ferrules 8-1 on seed chuck 2 and the circular lasso of said metal ferrules 8-1 for being formed by an one metal wire bending.Said mounting block is for being bent to form by an one metal wire and being level to the metallic tines 8-2 that lays, and said metallic tines and said circular lasso are connected to one.During actual the use, the chuck of said seed chuck 2 for seed crystal 11 is carried out clamping, said quartz crucible 5 outsides are set with a plumbago crucible 12.
In the present embodiment, said metallic tines and said circular lasso are formed by same one metal wire bending, and said metallic tines and said circular lasso form by same molybdenum filament bending, to satisfy heat-resisting demand.
In addition, the actual laying when installing, said metal ferrules 8-1 is sleeved on seed chuck 2 tops, and metal ferrules 8-1 is level to laying.Said seed chuck 2 top correspondences are provided with the circular groove that is used to mount metal ferrules 8-1.
The above; It only is the preferred embodiment of the utility model; Be not that the utility model is done any restriction; Everyly any simple modification that above embodiment did, change and equivalent structure are changed, all still belong in the protection domain of the utility model technical scheme according to the utility model technical spirit.
Claims (10)
1. a vertical pulling method manufacture order crystal silicon is used doper; It is characterized in that: comprise the hopper loader that is used for splendid attire and need adds doping agent (1), said hopper loader is fixed on the mounting block on the seed chuck (2) and drives through bump weight (4) that said hopper loader rocks and make that needing to add doping agent (1) add the percussion device in the quartz crucible (5) automatically; Said seed chuck (2) is fixed under the weight (4); Said weight (4) is suspended on the shift mechanism that is positioned at the secondary furnace chamber of single crystal growing furnace (3) top through stay cord (9); Said mounting block is fixedly mounted on the seed chuck (2) and said hopper loader is fixedly mounted on the said mounting block, and said percussion device is positioned at weight (4) outside.
2. use doper according to the described a kind of vertical pulling method manufacture order crystal silicon of claim 1; It is characterized in that: said percussion device is for being laid in the flap valve (7) in the perble range (6); Said perble range (6) is laid between secondary furnace chamber (3) of single crystal growing furnace and the single crystal growing furnace master furnace chamber (10), and said single crystal growing furnace master furnace chamber (10) is positioned under the secondary furnace chamber of single crystal growing furnace (3).
3. use doper according to claim 1 or 2 described a kind of vertical pulling method manufacture order crystal silicons, it is characterized in that: the metal ferrules (8-1) of said hopper loader for being fastened on seed chuck (2).
4. use doper according to the described a kind of vertical pulling method manufacture order crystal silicon of claim 3, it is characterized in that: the circular lasso of said metal ferrules (8-1) for forming by an one metal wire bending.
5. use doper according to the described a kind of vertical pulling method manufacture order crystal silicon of claim 4, it is characterized in that: said mounting block is for being bent to form by an one metal wire and being level to the metallic tines of laying (8-2).
6. use doper according to the described a kind of vertical pulling method manufacture order crystal silicon of claim 5, it is characterized in that: said metallic tines and said circular lasso are connected to one.
7. use doper according to the described a kind of vertical pulling method manufacture order crystal silicon of claim 6, it is characterized in that: said metallic tines and said circular lasso are formed by same one metal wire bending.
8. use doper according to the described a kind of vertical pulling method manufacture order crystal silicon of claim 7, it is characterized in that: said metallic tines and said circular lasso are formed by same molybdenum filament bending.
9. use doper according to the described a kind of vertical pulling method manufacture order crystal silicon of claim 3, it is characterized in that: said metal ferrules (8-1) is sleeved on seed chuck (2) top, and metal ferrules (8-1) is level to laying.
10. use doper according to the described a kind of vertical pulling method manufacture order crystal silicon of claim 9, it is characterized in that: said seed chuck (2) top correspondence is provided with the circular groove that is used to mount metal ferrules (8-1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120245224U CN202131395U (en) | 2011-07-13 | 2011-07-13 | Doping device for producing single crystal silicon in straight pull method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120245224U CN202131395U (en) | 2011-07-13 | 2011-07-13 | Doping device for producing single crystal silicon in straight pull method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202131395U true CN202131395U (en) | 2012-02-01 |
Family
ID=45520171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120245224U Expired - Lifetime CN202131395U (en) | 2011-07-13 | 2011-07-13 | Doping device for producing single crystal silicon in straight pull method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202131395U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103732807A (en) * | 2011-08-12 | 2014-04-16 | Lg矽得荣株式会社 | Ingot growing apparatus and method of manufacturing ingot |
| WO2016085969A1 (en) * | 2014-11-26 | 2016-06-02 | Sunedison, Inc. | Apparatus and method for introducing volatile dopants into a melt |
| CN105951172A (en) * | 2016-05-30 | 2016-09-21 | 上海超硅半导体有限公司 | Manufacturing method of N type/P type monocrystalline silicon crystal ingot |
| CN108796603A (en) * | 2018-08-29 | 2018-11-13 | 内蒙古中环协鑫光伏材料有限公司 | A kind of process of pulling of crystals doping up alloy |
-
2011
- 2011-07-13 CN CN201120245224U patent/CN202131395U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103732807A (en) * | 2011-08-12 | 2014-04-16 | Lg矽得荣株式会社 | Ingot growing apparatus and method of manufacturing ingot |
| CN103732807B (en) * | 2011-08-12 | 2016-06-08 | Lg矽得荣株式会社 | The method of brilliant ingot growth apparatus and the brilliant ingot of manufacture |
| WO2016085969A1 (en) * | 2014-11-26 | 2016-06-02 | Sunedison, Inc. | Apparatus and method for introducing volatile dopants into a melt |
| US10337118B2 (en) | 2014-11-26 | 2019-07-02 | Corner Star Limited | Apparatus and method for doping a semiconductor melt comprising a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck between a first and second end of the apparatus |
| CN105951172A (en) * | 2016-05-30 | 2016-09-21 | 上海超硅半导体有限公司 | Manufacturing method of N type/P type monocrystalline silicon crystal ingot |
| CN108796603A (en) * | 2018-08-29 | 2018-11-13 | 内蒙古中环协鑫光伏材料有限公司 | A kind of process of pulling of crystals doping up alloy |
| CN108796603B (en) * | 2018-08-29 | 2024-04-19 | 内蒙古中环晶体材料有限公司 | Process method for Czochralski single crystal complementary doping alloy |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202131395U (en) | Doping device for producing single crystal silicon in straight pull method | |
| CN102732953B (en) | Technology and apparatus for growing single silicon carbide crystals through double seed crystal-assisted vapor transport method | |
| CN103046130B (en) | P-type silicon single crystal and its manufacture method | |
| CN101805925B (en) | Gallium and indium doped single crystal silicon material for solar battery and preparation method thereof | |
| CN105755532A (en) | Crystalline silicon preparation method and crystalline silicon | |
| CN102345157A (en) | Continuous re-feeding production method of solar-grade Czochralski silicon | |
| CN104124292A (en) | Boron-gallium codoping monocrystalline silicon piece and preparation method thereof, and solar cell | |
| CN105358743A (en) | Single crystal production device and single crystal production method | |
| CN103834994A (en) | Polycrystalline silicon ingot and preparation method thereof and polycrystalline silicon wafer | |
| CN102260900A (en) | Device for improving consistency of longitudinal resistivity of single crystal silicon and treatment process thereof | |
| CN102817075A (en) | Master alloy production method by using polycrystalline foundry furnace | |
| CN201089803Y (en) | Charge pipe for elemental crystal furnace | |
| CN107130295A (en) | A kind of elimination hidden device and method split of silicon plug | |
| CN106222742A (en) | A kind of crystalline silicon and preparation method thereof | |
| JP5372105B2 (en) | N-type silicon single crystal and manufacturing method thereof | |
| CN100412239C (en) | Technique for growing Cd-Zn-Te crystal | |
| CN103014837A (en) | Secondary charging method for single crystal furnace | |
| CN103320849A (en) | Secondary feeding device and secondary feeding method therefor | |
| CN102719890A (en) | Method for casting large-grained polycrystalline silicon by utilizing silicon single crystal rod evolution flaw piece | |
| CN102828236B (en) | Single crystal growing furnace self-control type heating system | |
| CN106757315A (en) | A kind of weighing device of single crystal growing furnace | |
| CN217973493U (en) | Doping device for MCZ-Faraday heavily-doped antimony single crystal | |
| Dold | Silicon crystallization technologies | |
| CN102560625A (en) | Device and method for prolonging edge minority carrier lifetime of N-type silicon single crystal | |
| CN102877125A (en) | Polycrystal ingot furnace and method for growing mono-like silicon ingot by using the polycrystal ingot furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120201 |
|
| CX01 | Expiry of patent term |