CN104264229A - Online doping device for single crystal furnace - Google Patents
Online doping device for single crystal furnace Download PDFInfo
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- CN104264229A CN104264229A CN201410526990.2A CN201410526990A CN104264229A CN 104264229 A CN104264229 A CN 104264229A CN 201410526990 A CN201410526990 A CN 201410526990A CN 104264229 A CN104264229 A CN 104264229A
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Abstract
The invention relates to the field of addition of doped materials during the growth of single crystals, in particular to an online doping device for a single crystal furnace. The online doping device for the single crystal furnace aims to solve the problems of poor doping effects, poor doping process controllability and incapability of real-time doping in a drawing process in a process of producing monocrystalline silicon by a straight drawing method in the prior art; a mechanical mode is adopted as a main mode, and is combined with an electric mode, the contact time of doped elements and molten silicon is prolonged, the doped elements are doped in real time, and main technical parameters in a doping process are controllable. The device is simple and compact in design, easy to implement, lower in energy consumption cost and applicable to the field of doping treatment of multiple crystals, and has broad application and popularization prospect.
Description
Technical field
The present invention relates in single crystal growing and add dopant material field, be specifically related to the online doper of a kind of single crystal growing furnace.
Background technology
The adulterating method that vertical pulling method produces volatile doped element silicon single crystal used mainly comprises eutectic method and throw-in play.Eutectic method is placed in quartz crucible by dopant to melt together with polysilicon.Throw-in play, after being melted completely in quartz crucible by polysilicon, is fused in silicon, to reach the object of doping by dopant by special device.According to the property difference of doped element in reality doping, doping is divided into gas phase doping and liquid phase doping.Such as, during the element such as arsenic doped, phosphorus, because the element gasification such as arsenic, phosphorus point is low, easily volatilize, usually adopt the mode of gas phase doping to carry out.The doper that current gas phase doping uses is bell-jar structure mainly, the container of doped element is loaded with bell jar hangs inside one, doping clock mask declines and close molten silicon, rely on the radiant heat of molten silicon doped element to be gasified, the doped element after gasification contacts with molten silicon face in bell jar.When using above device to carry out gas phase doping, owing to not contacting with molten silicon bottom bell jar, most of doped element steam after gasification will, by being taken away by vacuum pump with the gap of fusion silicon liquid level bottom bell jar, had a strong impact on doping effect and quality product, and the controllability of doping process be lower.For avoiding the loss of doped element, the bottom of doper is designed to dropper pattern and inserts in molten silicon adulterate by prior art, but after terminating owing to adulterating, dropper cavity internal pressure sharply reduces, molten silicon is entered in dropper and doper by suck-back, molten silicon very easily occurs and solidifies the situation being split up doper.In addition, bell-jar hangs doper and can only adulterate before pulling monocrystal, cannot adulterate in pulling process, the high temperature subnormal ambient caused along with the stretching of single crystal growing furnace internal cause constantly strengthens, the gas phase doping material be dissolved in molten silicon is easy to volatilization, and dopant constantly reduces causes doping to carry out.
In sum, the doping poor effect, the doping poor process control that exist in vertical pulling method manufacture order crystal silicon process of prior art and cannot realize the problems such as real-time doping in drawing process.
Summary of the invention
For poor effect of adulterating in prior art, doping poor process control and the deficiency that cannot adulterate in real time online, the invention provides the online doper of a kind of easy and simple to handle, safe and reliable single crystal growing furnace, add the duration of contact of doped element and molten silicon, achieve real-time doping, be applicable to vertical pulling method tensile, monocrystaline silicon, for the manufacturing technology and serviceability improving solar-energy photo-voltaic cell provides reliable technical support.
For solving above technical problem, technical scheme of the present invention is:
The online doper of a kind of single crystal growing furnace, comprises feed bin mechanism, transfer mechanism and controlling organization.Feed bin mechanism is connected with transfer mechanism, and controlling organization and feed bin mechanism are connected with transfer mechanism and control the work of feed bin mechanism and transfer mechanism.Transfer mechanism to be arranged on single crystal growing furnace bell and to be communicated with by the installation bore on single crystal growing furnace and single crystal growing furnace inside.
Concrete, feed bin mechanism comprises the feed bin shell of hollow, feed bin door, feed bin sealing mechanism, feed bin, U-shaped discharge nozzle, material-collecting funnel, feed bin motor and blanking deceleration tube.Feed bin enclosure is provided with the feed bin that can freely rotate and the U-shaped discharge nozzle be communicated with feed bin, and the bottom of feed bin shell is provided with material-collecting funnel, and material-collecting funnel bottom is connected with blanking deceleration tube.Feed bin door is connected with feed bin shell and can free-open-close.Seal silo shell is provided with feed bin sealing mechanism, feed bin sealing mechanism and feed bin door suitable.Feed bin motor to be arranged on feed bin shell and to drive feed bin to rotate.
Concrete, transfer mechanism comprises transfer mechanism shell, is provided with the quartzy carrier pipe of production well, vacuum breaker, windlass and conveying step-down gear.The top of transfer mechanism shell is provided with windlass and the conveying step-down gear that is connected with windlass and motor, the sidewall of transfer mechanism shell is provided with the opening for installing blanking deceleration tube.The stainless steel rope of windlass is connected with quartzy carrier pipe, and quartzy carrier pipe is provided with vacuum breaker.Conveying step-down gear to be arranged on transfer mechanism shell and to drive windlass to rotate.
Concrete, controlling organization comprises display screen, signal input apparatus, switching arrangement and control module.Electric energy is loaded on control module, display screen and signal input apparatus by switching arrangement, and signal input apparatus is connected with display screen respectively with control module; Input signal transfers in control module by signal input apparatus, and control module response input signal also sends control signal, and feed bin motor and conveying step-down gear receive and perform control signal.
Concrete, the production well of quartzy carrier pipe is arranged on the sidewall of its underpart.
Concrete, the slide block that transfer mechanism also comprises conveying track and matches with conveying track.Conveying track is arranged on the inside of transfer mechanism shell and is connected with transfer mechanism shell.Slide block is connected between quartzy carrier pipe and windlass.
Concrete, in transfer mechanism, conveying track is provided with terminal/zero point spacing.
Concrete, feed bin organization establishes has argon gas inflation inlet, and argon gas inflation inlet is arranged on feed bin shell or feed bin door.
Concrete, feed bin organization establishes has viewing window, and viewing window is arranged on feed bin shell or feed bin door.
Beneficial effect of the present invention: 1, the online doper of single crystal growing furnace disclosed by the invention is independent of single crystal growing furnace, and the work of its work and single crystal growing furnace does not interfere with each other, can add dopant in real time while single crystal growing furnace work in stove; 2, feed bin driven by motor feed bin rotates and makes the dopant in feed bin enter quartzy carrier pipe by U-shaped discharge nozzle and material-collecting funnel, be doped in the molten silicon of single crystal growing furnace by the production well on quartzy carrier pipe, namely achieving by controlling feed bin motor control dopant being added to frequency, improve the management and control to doping process; 3, carry step-down gear to drive the windlass be connected with quartzy carrier pipe to rotate, carry step-down gear to achieve by control and the control that single crystal growing furnace melts the degree of depth in silicon and dopant and molten silicon duration of contact is joined to dopant, improves the management and control to the process of doping; 4, quartzy carrier pipe can carry any distance above dopant to single crystal growing furnace fusion silicon liquid level, can ensure fully contacting and duration of contact of dopant and molten silicon, and then improves doping work quality, obtains effect of adulterating preferably; 5, the online doper of this single crystal growing furnace is closed structure, non-impurity-doped material damage, is conducive to improving doping effect; 6, vacuum breaker avoids high temperature melting silicon suck-back and enters in doper, and suppresses the precipitation of doped element in molten silicon, is conducive to proterctive equipment and improves doping effect; 7, the argon gas inflation inlet in feed bin mechanism ensure that single crystal growing furnace vacuumizes and the carrying out smoothly of applying argon gas technique, and single crystal growing furnace to vacuumize with applying argon gas be the important process means of protection dopant and production unit; 8, conveying track and slide block are that the up-and-down movement of quartzy carrier pipe provides support, and make the motion more steady and smooth of quartzy carrier pipe, are conducive to protector and improve doping effect; 9, the production well on quartzy carrier pipe lower sides is the passage entering molten silicon after dopant gasification, avoids dopant directly to fall in single crystal growing furnace, is conducive to ensureing doping quality; 10, viewing window enables operator observe doping progress at any time, is conducive to operator and takes measures in time for abnormal conditions.The present invention proposes a kind of based on machine, the online doper of single crystal growing furnace of electric-mechanic control system, this specific equipment solves the doping problem of vertical pulling method manufacture order crystal silicon in solar-energy photo-voltaic cell making processes, is conducive to the manufacturing technology of solar-energy photo-voltaic cell industry and the raising of quality product.The present invention designs concision and compact, easy to implement, and construction, maintenance and energy consumption cost are lower, and whole-course automation is run, and is applicable to multiple crystal doping process field, has wide application and promotion prospect.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the structural representation of feed bin mechanism of the present invention.
Wherein, 1 feed bin shell, 2 feed bin doors, 3 feed bin sealing mechanisms, 4 feed bins, 5 feed bin motors, 6 U-shaped discharge nozzles, 7 material-collecting funnels, 8 argon gas inflation inlets, 9 quartzy carrier pipes, 10 vacuum breaker, 11 conveying tracks, 12 slide blocks, 13 blanking deceleration tubes, 14 transfer mechanism shells, 15 terminals/zero point is spacing, 16 conveying step-down gears, 17 windlasss, 18 viewing windows, 19 single crystal growing furnace bells, 20 single crystal growing furnaces.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
With reference to Fig. 1 ~ 2, the composition of embodiment comprises interconnective feed bin mechanism, transfer mechanism and controlling organization, and feed bin mechanism and transfer mechanism perform doping operation according to the instruction of controlling organization.
Wherein, feed bin mechanism comprises feed bin shell 1, feed bin door 2, feed bin sealing mechanism 3, feed bin 4, feed bin motor 5, U-shaped discharge nozzle 6, material-collecting funnel 7, argon gas inflation inlet 8, blanking deceleration tube 13 and viewing window 18.Feed bin shell 1 inside is provided with the feed bin 4 that can freely rotate and the U-shaped discharge nozzle 6 be communicated with feed bin 4, and the bottom of feed bin shell 1 is provided with material-collecting funnel 7, and material-collecting funnel 7 bottom is connected with blanking deceleration tube 13.Feed bin door 2 is connected with feed bin shell 1 and can free-open-close, and feed bin sealing mechanism 3 is seal silo shell 1 and feed bin door 2 when feed bin door 2 closes, and wherein storehouse sealing mechanism 3 is sealed strip.Feed bin motor 5 to be arranged on feed bin shell 1 and to drive feed bin 4 to rotate.Argon gas inflation inlet 8 is arranged on the top of feed bin shell 1.Viewing window 18 is arranged on feed bin door 2.
Transfer mechanism comprises transfer mechanism shell 14, quartzy carrier pipe 9, vacuum breaker 10, windlass 17, conveying step-down gear 16, conveying track 11, slide block 12 and terminal/zero point spacing 15.The top of transfer mechanism shell 1 is provided with windlass 17, transfer mechanism shell 1 inside be provided with conveying track 11 and with conveying track 11 with the use of slide block 12, the sidewall of transfer mechanism shell 1 is provided with the opening for installing blanking deceleration tube 13.Conveying track 11 is provided with terminal/zero point spacing 15.The stainless steel rope of windlass 17 is connected with quartzy carrier pipe 9 by slide block 12.The top of quartz carrier pipe 9 is provided with vacuum breaker 10, and the sidewall of quartzy carrier pipe 9 bottom is provided with production well.Conveying step-down gear 16 to be arranged on transfer mechanism shell 1 and to drive windlass 17 to rotate.
Controlling organization comprises display screen, signal input apparatus, the switching arrangement being provided with emergency stop switch and control module.Electric energy is loaded on control module, display screen and signal input apparatus by switching arrangement, and signal input apparatus is connected with display screen respectively with control module; Input signal transfers in control module by signal input apparatus, and control module response input signal also sends control signal, and feed bin motor 5 and conveying step-down gear 16 receive and perform control signal.Wherein, signal input apparatus is keyboard, and control module is PCL or micro-chip.In addition, specifically can, by the Function Integration Mechanism of display screen with signal input apparatus, touch-screen be namely used to realize showing and signal input function when implementing.
The doping process of the present embodiment is:
1, joined by dopant in feed bin 4, closed feed bin door 2, starts feed bin sealing mechanism 3;
2, starting switch device, for working power connected by display screen, signal input apparatus, control module, feed bin motor 5 and conveying step-down gear 16, by signal input apparatus setting doping process parameter, comprises reinforced frequency and the feeding degree of depth;
3, carry step-down gear 16 to start and quartzy carrier pipe 9 is delivered to specified location by the feeding degree of depth driving winding plant 17 set according to step 2, carry step-down gear 16 to close;
4, feed bin motor 5 starts and drives feed bin 4 to throw in dopant to quartzy carrier pipe 9 according to the reinforced frequency that step 2 sets;
5, the dopant in quartzy carrier pipe 9 enters in single crystal growing furnace by the production well through quartzy carrier pipe 9 after single crystal growing furnace thermal radiation gasification and adulterates;
6, silicon single crystal stretch after feed bin motor 5 close, conveying step-down gear 16 start and rotate backward, by drive winding plant 17 quartzy carrier pipe 9 is gone up to terminal/zero point spacing 15 places, power cut-off.
The dopant put in feed bin 4 is the particle of diameter 2 ~ 5mm, and the dopant charging capacity of each doping should meet the needs of a silicon single crystal stretching.In the present embodiment, the capacity of feed bin 4 is more than or equal to the volume of the dopant needed for a silicon single crystal stretching.In the present embodiment, feed bin 4 often rotates one week, and dopant is by being positioned at feed bin 4 and the U-shaped discharge nozzle 6 being communicated with feed bin 4 and feed bin shell 1 bursts out.Feed bin 4 drives rotation by feed bin motor 5, namely achieves the management and control to reinforced frequency by control feed bin motor 5.Quartz carrier pipe extends the degree of depth in single crystal growing furnace 20 and the feeding degree of depth for 9 times.Reinforced frequency and the feeding degree of depth all can set before doping, improve the management and control ability for doping process, are conducive to improving doping effect.In the present embodiment, doper and single crystal growing furnace constitute totally enclosed structure, constantly in doper and single crystal growing furnace, argon gas is filled with by argon gas inflation inlet 8 in doping process, due to the effect of vacuum breaker 10 and argon gas, the dopant of gasification can only be entered in single crystal growing furnace by the production well of quartzy carrier pipe 9.Operator monitor doping process by viewing window 18, and as fault, the emergency stop switch starting controlling organization breaker in middle device carries out emergency stop, can proterctive equipment operating safety, avoid producing waste.
In sum, the present embodiment can implement doping to the molten silicon in single crystal growing furnace incessantly, achieves the online doping in real time that silicon single crystal stretches, improve doping quality, and the main technologic parameters of doping is controlled, enhances the management and control to doping process.
The above embodiment is only the preferred embodiments of the present invention, and and the feasible enforcement of non-invention exhaustive.For persons skilled in the art, to any apparent change done by it under the prerequisite not deviating from the principle of the invention and spirit, all should be contemplated as falling with within claims of the present invention.
Claims (6)
1. the online doper of single crystal growing furnace, is characterized in that it comprises feed bin mechanism, transfer mechanism and controlling organization; Described feed bin mechanism is connected with transfer mechanism, and described controlling organization and feed bin mechanism are connected with transfer mechanism and control the work of feed bin mechanism and transfer mechanism; Described transfer mechanism is arranged on single crystal growing furnace bell (19) and goes up and pass through installation bore on single crystal growing furnace bell (19) and be communicated with single crystal growing furnace (20) inside;
Described feed bin mechanism comprises the feed bin shell (1) of hollow, feed bin door (2), feed bin sealing mechanism (3), feed bin (4), U-shaped discharge nozzle (6), material-collecting funnel (7), feed bin motor (5) and blanking deceleration tube (13); Described feed bin shell (1) inside is provided with the feed bin (4) that can freely rotate and the U-shaped discharge nozzle (6) be communicated with feed bin (4), and the bottom of described feed bin shell (1) is provided with the material-collecting funnel (7) be connected with blanking deceleration tube (13); Described feed bin door (2) is connected with feed bin shell (1) and can free-open-close; Described seal silo shell (1) is provided with feed bin sealing mechanism (3), and described feed bin sealing mechanism (3) is suitable with feed bin door (2); Described feed bin motor (5) is arranged on feed bin shell (1) and goes up and drive feed bin (4) to rotate;
Described transfer mechanism comprises transfer mechanism shell (14), is provided with the quartzy carrier pipe (9) of production well, the vacuum breaker (10) be arranged on quartzy carrier pipe (9), windlass (17) and the conveying step-down gear (16) be connected with windlass (17) and motor; The top of described transfer mechanism shell (14) is provided with windlass (17), the sidewall of described transfer mechanism shell (14) is provided with the opening for installing blanking deceleration tube (13); Described windlass (17) is connected with quartzy carrier pipe (9); Described conveying step-down gear (16) is arranged on transfer mechanism shell (14) and goes up and drive windlass (17) to rotate;
Described controlling organization comprises display screen, signal input apparatus, switching arrangement and control module, electric energy is loaded on control module, display screen and signal input apparatus by described switching arrangement, described signal input apparatus is connected with display screen respectively with control module, input signal transfers in control module by signal input apparatus, described control module response input signal also sends control signal, and described feed bin motor and conveying step-down gear receive and perform control signal.
2. the online doper of a kind of single crystal growing furnace according to claim 1, is characterized in that the production well of described quartzy carrier pipe (9) is arranged on the sidewall of its underpart.
3. the online doper of a kind of single crystal growing furnace according to claim 2, it is characterized in that the slide block (12) that described transfer mechanism also comprises conveying track (11) and matches with conveying track (11), described conveying track (11) is arranged on the inside of transfer mechanism shell (14) and is connected with transfer mechanism shell (14), and described slide block (12) is connected between quartzy carrier pipe (9) and windlass (17).
4. the online doper of a kind of single crystal growing furnace according to claim 3, it is characterized in that described transfer mechanism also comprises terminal/zero point spacing (15), described terminal/zero point, spacing (15) were positioned on conveying track (11).
5. the online doper of a kind of single crystal growing furnace according to claim 4, is characterized in that described feed bin organization establishes has argon gas inflation inlet (8), and described argon gas inflation inlet (8) is arranged on feed bin shell (1).
6. the online doper of a kind of single crystal growing furnace according to claim 5, it is characterized in that described feed bin organization establishes has viewing window (18), described viewing window (18) is arranged on feed bin door (2).
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| CN201410526990.2A CN104264229B (en) | 2014-10-09 | 2014-10-09 | A kind of online doper of single crystal growing furnace |
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| CN201410526990.2A CN104264229B (en) | 2014-10-09 | 2014-10-09 | A kind of online doper of single crystal growing furnace |
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Cited By (4)
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| CN105951172A (en) * | 2016-05-30 | 2016-09-21 | 上海超硅半导体有限公司 | Manufacturing method of N type/P type monocrystalline silicon crystal ingot |
| CN109183140A (en) * | 2018-11-16 | 2019-01-11 | 江苏协鑫软控设备科技发展有限公司 | Single crystal growing furnace and its continuous feeding |
| CN109306515A (en) * | 2017-07-27 | 2019-02-05 | 隆基绿能科技股份有限公司 | Material delivery system and crystal growth system |
| CN116949554A (en) * | 2023-09-05 | 2023-10-27 | 鄂尔多斯市中成榆能源有限公司 | Production method and production system of Czochralski silicon |
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|---|---|
| CN104264229B (en) | 2016-08-24 |
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