CN109183140B - Single crystal furnace and continuous feeding device thereof - Google Patents
Single crystal furnace and continuous feeding device thereof Download PDFInfo
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- CN109183140B CN109183140B CN201811363620.6A CN201811363620A CN109183140B CN 109183140 B CN109183140 B CN 109183140B CN 201811363620 A CN201811363620 A CN 201811363620A CN 109183140 B CN109183140 B CN 109183140B
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- 239000013078 crystal Substances 0.000 title claims abstract description 48
- 239000002210 silicon-based material Substances 0.000 claims abstract description 60
- 238000007789 sealing Methods 0.000 claims abstract description 9
- 230000007246 mechanism Effects 0.000 claims description 16
- 238000005303 weighing Methods 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 2
- 238000004378 air conditioning Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002231 Czochralski process Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a continuous feeding device of a single crystal furnace, which comprises: the shell is provided with a charging port and a lifting interface; the bracket is fixed in the outer shell; the hopper is supported on the bracket, and the bottom of the hopper is provided with a discharge hole; the upper port of the feeding pipe is positioned in the outer shell, and the lower port of the feeding pipe extends out of the bottom of the outer shell; the silicon material conveying device is positioned in the outer shell and is in sealing connection with the discharge port and the upper port of the charging pipe; one end of the doping tube is positioned outside the outer shell, and the other end of the doping tube is positioned above the upper port of the charging tube and is in sealing connection with the upper port of the charging tube; and the locating pin is fixed at the bottom of the outer shell. The shell body can be mounted to the upright post of the single crystal furnace and positioned through the positioning pin, so that the shell body can be quickly connected to the furnace body, and the silicon material conveying device is in sealing connection with the discharge port and the charging pipe, so that continuous charging can be realized under a closed environment, and pollution is avoided. Also provides a single crystal furnace, which comprises the continuous feeding device.
Description
Technical Field
The invention relates to the field of single crystal preparation devices, in particular to a single crystal furnace and a continuous feeding device thereof.
Background
At present, a Czochralski silicon single crystal furnace is a main device for producing single crystal silicon rods by most manufacturers, and on the premise of ensuring excellent and reliable performance of the single crystal silicon rods, how to reduce the manufacturing cost of the product is sought by the single crystal silicon manufacturers. In face of industry demands, the single furnace feeding amount is increased, the single furnace yield and efficiency of the single furnace are improved, and the single furnace feeding amount and the single furnace feeding efficiency become important development directions of the industry.
The Czochralski silicon has the defects of long production flow, complicated process, small crucible, incapability of continuous feeding and the like. Therefore, only one single crystal rod can be pulled per melting of the polysilicon charge of a crucible. When a single crystal rod is pulled, the temperature is lowered once, the furnace is stopped once, the furnace is disassembled once, a thermal field and a filtering system are cleaned, so that not only is manpower wasted and energy wasted, but also the production efficiency is seriously affected, the cost is high, and the development of the single crystal silicon straight pulling furnace is not facilitated.
On the one hand, the size of the crucible can be increased, the loading capacity of the single silicon can be increased, but the size of the crucible is increased, the size of the single crystal furnace is increased, the thermal field size is increased, the power is increased, the manufacturing difficulty is increased, and when the crucible is larger, the process control difficulty, such as temperature gradient control, is increased, and the manufacturing difficulty and the manufacturing cost of the crucible are increased. The other direction is considered to be an auxiliary feeding device. The following details regarding the auxiliary feeder are now divided into 2 parts, namely multiple feeds Recharging Process (semi-continuous) and continuous feeds Continuous Czochralski Process. More than 98% of single crystal furnaces in the market all adopt multiple feeding, and the specific mode is as follows: the furnace cover of the single crystal furnace is provided with a feed port, after a single crystal is pulled out, the silicon liquid in the crucible is at a low liquid level, the bulk material is conveyed into the crucible at one time to carry out continuous crystal pulling process by connecting the multiple feed devices to the feed port of the furnace cover, and the liquid level is also lowered simultaneously along with continuous pulling of the crystal rod in the crystal pulling process. Compared with the traditional single-charge single-crystal rod furnace, the method has the advantages that the efficiency is greatly improved, but at the same time, the method has some disadvantages: if (1) silicon liquid is easy to splash out of the crucible in the feeding process (2) and secondary pollution is caused to the silicon material by using a mechanical mechanism and the abrasion of a guide cylinder (3), manual intervention is needed when a hopper is connected with a furnace body, or the device works in a semi-automatic state in the working process. (4) The addition of the impurities for many times can cause accumulation of the impurities and cannot be measured, meanwhile, the increase of the impurities does not increase in a specific linear or regular manner, so that the doping difficulty is increased, the quality of the rod is gradually deteriorated, the axial distribution of the dopant concentration is uneven, and the controllability is poor.
Disclosure of Invention
Based on this, it is necessary to provide a single crystal furnace and a continuous charging device thereof that can be quickly connected to a furnace body to achieve continuous charging and avoid pollution.
A continuous feeding apparatus for a single crystal furnace, comprising: the top of the outer shell is provided with a charging port, and the outer wall of the outer shell is provided with a hoisting interface; the bracket is fixed in the outer shell; the hopper is supported on the bracket, and a discharge hole is formed in the bottom of the hopper; the upper port of the feeding pipe is positioned in the outer shell, and the lower port of the feeding pipe extends out of the bottom of the outer shell; the silicon material conveying device is positioned in the outer shell and is in sealing connection with the discharge port and the upper port of the feeding pipe; one end of the doping tube is positioned outside the shell body, and the other end of the doping tube is positioned above the upper port of the charging tube and is in sealing connection with the upper port of the charging tube; and the locating pin is fixed at the bottom of the outer shell.
In one embodiment, the inner wall of the hopper has a protective liner.
In one embodiment, the lower port is externally sleeved with a bellows fixed to the outer housing.
In one embodiment, a silicon material distributor is further arranged above the discharge hole, and the silicon material distributor is a cone.
In one embodiment, the silicon material feeding device further comprises an adapter with an inner cavity, and the feeding tube, the silicon material conveying device and the doping tube are inserted into the inner cavity of the adapter.
In one embodiment, the device further comprises a connecting frame, the adapter, the silicon material conveying device and the hopper are fixedly connected with the connecting frame, the connecting frame is supported by the support, and a weighing sensor is further arranged between the connecting frame and the support.
In one embodiment, the outer shell is further provided with a vacuumizing port, an argon gas interface, a vacuum gauge mounting interface and an observation window.
In one embodiment, the lifting structure is a guide rail or a slider.
In one embodiment, the silicon material conveying device comprises a vertical pipe and a horizontal pipe, wherein the vertical pipe and the horizontal pipe are communicated with the discharge port, a vibrating feeder is arranged in the horizontal pipe, the horizontal pipe is communicated with the vertical pipe, and the horizontal pipe is provided with an outlet positioned above the upper port of the feeding pipe.
The single crystal furnace comprises a furnace body, a stand column and the continuous feeding device according to any one of the previous embodiments, wherein a guide component and a lifting mechanism are arranged on the stand column, the lifting interface is connected to the guide component in a sliding manner and driven to lift by the lifting mechanism, and the positioning pin is matched with the furnace body.
In one embodiment, the lifting mechanism comprises a motor fixed on the upright post and a linear lifting unit driven by the motor, and the linear lifting unit is fixedly connected with the lifting interface.
Above-mentioned single crystal furnace and continuous feeding device thereof, wherein continuous feeding device's shell body mountable to single crystal furnace's stand and through the locating pin location to can be connected to the furnace body fast, and all sealing connection between silicon material conveyor and discharge gate and the charging tube can realize continuous feeding under the confined environment, avoid polluting.
Drawings
FIG. 1 is a schematic structural view of a continuous feeding apparatus of a single crystal furnace according to an embodiment of the present invention;
FIG. 2 is a schematic view of the continuous feed apparatus of FIG. 1 at another angle;
FIG. 3 is a schematic view of a continuous feed apparatus of a single crystal furnace according to an embodiment of the present invention connected to a column of the single crystal furnace.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
Referring to fig. 1 and 2, one embodiment of the present invention provides a continuous feeding apparatus 100 for a single crystal furnace of the czochralski method (Continuous Czochralski Process, CCZ), comprising an outer housing 10, a support 20, a hopper 30, a feeding tube 40, a silicon feed conveyor 50, and a doping tube 60. Wherein, referring to fig. 3, the outer case 10 is to be mounted to the column 200 of the single crystal furnace so that the continuous feeding apparatus 100 can be docked with the furnace body 300, thereby achieving continuous feeding. The support 20, the hopper 30, the charging pipe 40, the silicon material transporting device 50, etc. are all disposed inside the outer housing 10. The doping tube 60 communicates with the inside and outside of the outer casing 10 for simultaneous doping during continuous charging.
The outer shell 10 is cylindrical in shape, and can be formed by splicing multiple layers, such as an upper layer structure, a middle layer structure and a lower layer structure, and the layers can be sealed by adopting an O-shaped ring, so that the outer shell can be conveniently disassembled, assembled and maintained. A feed port 110 is provided at the top of the outer housing 10 for adding silicon material to the hopper 30. A lifting interface 120 is provided on the outer wall of the outer shell 10 for mounting to the column 200. The bottom of the outer housing 10 is provided with a locating pin 130. In use, as shown in fig. 3, the continuous feeding apparatus 100 is slidably engaged with the guide member 210 of the upright post 200 via the lifting interface 120 of the outer housing 10, and is lifted by the lifting mechanism 220 fixed to the upright post 200. The positioning pin 130 at the bottom of the outer casing 10 is used to cooperate with the positioning part on the furnace body 300 for positioning, so that the continuous feeding device 100 can lift on the guiding component 210, and can be quickly and automatically connected and positioned with the furnace body 310 through the positioning pin 130, so that the working efficiency is high. The lifting interface 120 is configured to slidably engage the column 200, for example, when the guide member 210 is provided on the column 200, the lifting interface 120 may be a slider that can only move along the length of the guide member 210. Of course, the opposite is also possible, i.e. the lifting interface 120 is a guide rail, and the upright 200 is fixedly provided with a slider.
The bracket 20 is located in the outer casing 10 and fixedly connected with the inner wall of the outer casing 10. The support 20 is used to support the hopper 30.
The upper part of the hopper 30 is provided with a feed inlet which is opposite to the feed inlet 110. The bottom of the hopper 30 is provided with a discharge outlet 310. A feeding pipe 40 and a silicon material conveying device 50 are arranged below the discharging hole 310. Wherein the upper port 410 of the filling tube 40 is located in the outer housing 10 and the lower port 420 extends out of the bottom of the outer housing 10. The loading tube 40 may be a high purity quartz tube. The silicon material transporting device 50 is a device capable of transporting silicon material from the discharge port 310 to the charging pipe 40, and can automatically operate under the control of the electrical control cabinet. The silicon material conveying device 50 is in sealing connection with the discharge port 310 and the upper port 410 of the charging pipe 40. In this way, the silicon material is transferred in the closed environment by the silicon material transfer device 50 during the process of transferring the silicon material in the hopper 30 to the feeding tube 40, so that secondary pollution and scattering of the silicon material can be prevented.
One end of the doping tube 60 is located outside the outer case 10, and the other end extends into the outer case 10, is located above the upper port 410 of the filling tube 40, and is hermetically connected with the upper port 410 of the filling tube 40. Therefore, the dopant is conveyed into the silicon material in a closed environment, so that secondary pollution is prevented. The end of the doping tube 60 located outside the outer housing 10 may be sealed when not in use.
The continuous feeding device 100 of the single crystal furnace can be integrally mounted to the upright post 200 of the single crystal furnace, and can be rapidly positioned to the furnace body 300 by utilizing the positioning pin 120, so that the positioning work efficiency is improved. In addition, the continuous feeding device 100 is integrated with the doping pipe 60, so that the feeding and doping can be synchronously performed, and the silicon material conveying and the doping agent conveying are realized in a closed environment, so that the secondary pollution of the silicon material and the doping agent is prevented.
In addition, a discharge valve 320 controlled by an electrical control cabinet can be further arranged at the discharge port 310. The outer case 10 is provided with a vacuum port 140, an argon port 150, an observation window 160, and a vacuum gauge port 170 to which a vacuum gauge 180 is attached. When the continuous feeding device 100 is connected with the electrical control cabinet, automatic working feeding can be realized, the opening and closing of the discharge valve 320 can be controlled by an industrial personal computer in the electrical control cabinet, and the transmission rate of the silicon material conveying device 50 can be controlled, so that the silicon material addition is consistent with the single crystal pulling speed, and the whole-course automatic control is realized.
According to some embodiments of the invention, the inner wall of the hopper 30 has a protective lining. The protective lining can be made of a high-molecular clean material which can not pollute the silicon material, so that the hopper 30 can be prevented from polluting the silicon material.
According to some embodiments of the present invention, the exterior of the lower port 410 of the filling tube 40 is further sleeved with a bellows 430 secured to the outer housing 10. When the continuous feeding apparatus 100 is mounted to the column 200, the bellows 430 may be connected to the isolation valve 310 on the furnace body 300 to form a sealed environment outside the lower port 410 of the feeding tube 40. The filling pipe 40 is positioned inside the bellows 430, and when the isolation valve 310 is opened, the filling pipe 40 may extend into the furnace 300 from the isolation valve 310. Bellows 430 is flexible and does not interfere with movement of continuous feed apparatus 100.
According to some embodiments of the present invention, a silicon material distributor 330 is further disposed above the discharge port 310, and the silicon material distributor 330 is a cone. As shown in fig. 2, a silicon distributor 330 is also provided in the hopper 30 above the discharge port 310. The silicon material distributor 330 may be secured to the top wall of the hopper 30 with a hanger bar 340. When adding silicon material to the hopper 30, a portion of the silicon material will first fall onto the conical surface of the silicon material distributor 330 and then slide down the conical surface under the force of gravity and converge into the discharge port 310, thereby reducing the level of silicon material accumulation at the discharge port 310 when adding silicon material to the hopper 30.
According to some embodiments of the present invention, the adaptor 70 further comprises an inner cavity, wherein the feeding tube 40, the silicon delivery device 50 and the doping tube 60 are inserted into the inner cavity of the adaptor 70. As shown in fig. 2, the nozzles of the feeding pipe 40, the silicon material transporting device 50 and the doping pipe 60 are placed in a sealed environment by the adaptor 70, so that the process of transferring the silicon material from the silicon material transporting device 50 to the feeding pipe 40 is performed in a closed environment, and the process of transferring the doping agent from the doping pipe 60 to the feeding pipe 40 is performed in a closed environment, thereby avoiding secondary pollution of the silicon material and the doping agent.
Further, a connection frame 80 is provided in the outer case 10. The adaptor 70, the silicon material conveying device 50 and the hopper 30 are fixedly connected with a connecting frame 80, and the connecting frame 80 is supported on the bracket 20. As shown in fig. 2, the connecting frame 80 fixedly connects the adaptor 70 and the silicon material conveying device 50 to the bottom of the hopper 30, so that the assembly formed by the adaptor 70, the silicon material conveying device 50, the hopper 30 and the connecting frame 80 is integrally placed on the bracket 20, and the hopper 30, the silicon material conveying device 50 and the adaptor 70 can be stably supported in the outer casing 10.
Further, a weighing sensor is also arranged between the connecting frame 20 and the bracket 10. The data of the weighing sensor can be zeroed in advance, or the original data is recorded, when the silicon material is added into the hopper 30, the weighing sensor sends the data to the industrial personal computer in real time, and the industrial personal computer can calculate the weight of the added silicon material, so that the feeding amount can be controlled conveniently. The number of weighing sensors is not limited, for example, three fulcrums can be used to support the hopper 30, and each fulcrum is provided with a weighing sensor, so that stable support is provided, and weighing accuracy is ensured.
According to some embodiments of the present invention, the silicon material conveying apparatus 50 includes a vertical tube 510 connected to the discharge port 310 and a horizontal tube 520, wherein a vibrating feeder 530 is provided in the horizontal tube 520, the horizontal tube 520 is in communication with the vertical tube 510, and the horizontal tube 520 has an outlet 522 located above the upper port 410 of the charging tube 40. Referring to fig. 2, the vertical tube 510 is vertically placed, and the horizontal tube 520 is horizontally placed. The silicon material falls out from the discharge hole 310, enters the horizontal pipe 520 through the vertical pipe 510 and falls on the vibrating feeder 530, then is oscillated and crushed by the vibrating feeder 530 and horizontally conveyed to the upper part of the upper port 410, finally falls into the charging pipe 40, and then enters the furnace body 300 of the single crystal furnace under the action of gravity. The vertical tube 510 and the horizontal tube 520 can be quartz tubes, which can not pollute silicon materials and resist high temperature. Moreover, the inner walls of the vertical tube 510 and the horizontal tube 520 can be further provided with a protective coating to avoid polluting the silicon material. In addition, the silicon material conveying device 50 adopts the vibrating feeder 530 to crush and convey silicon material, and can be compatible with the use of granule materials and crushed materials.
Referring to fig. 3, an embodiment of the present invention further provides a single crystal furnace, including a column 200, a furnace body 300, and the continuous feeding apparatus 100 according to any of the above embodiments. The column 200 and the furnace body 300 may be mounted to the same base. The column 200 is mounted with a guide member 210 and a lifting mechanism 220. The furnace body 300 is provided with a positioning part which can be matched with the positioning pin 110. The lifting interface 120 of the continuous feeding apparatus 100 can be slidably connected to the guide member 210 and driven by the lifting mechanism 220 to move up and down along the upright 200.
The structures of the lifting interface 120 and the guide member 210 are not particularly limited, as long as the two can slide relatively, for example, the lifting interface 120 may be a slider, and the guide member 210 may be a slide rail. The type of the elevating mechanism 220 is not limited, and may be any mechanism capable of driving the continuous feeding apparatus 100 up and down. For example, the lifting mechanism 220 may include a motor 221 fixed on the upright 200, and a linear lifting unit 222 driven by the motor 221, where the linear lifting unit 222 is fixedly connected with the lifting interface 120. Of course, the lifting mechanism 220 may be other types of mechanisms, such as a cylinder system.
When the continuous feeding device 100 is needed to be used, clean polysilicon material (crushed material or granular material) is added into the hopper 30 from the feeding port 110, then the lifting interface 120 of the continuous feeding device 100 is mounted to the guide member 210, the guide member 210 is fixedly connected with the linear lifting unit 222 of the lifting mechanism 220, the lifting mechanism 220 is started to drive the continuous feeding device 100 to move, and the positioning pin 130 is matched with the positioning position arranged on the furnace body 300, so that the positioning can be quickly realized. It will be appreciated that the addition of silicon material to the hopper 30 may be performed after the continuous feed apparatus 100 is mounted to the column 200.
Then, the bellows 430 is connected with the isolation valve 310 on the furnace body 300, the vacuum system is used to pump the pressure in the outer shell 10 to be consistent with that in the furnace body 300, then the isolation valve 310 on the furnace body 300 is opened to enable the feeding pipe to be inserted into the furnace body 300, finally the industrial personal computer controls the feeding rate to be consistent with the single crystal speed, automatic continuous feeding is achieved, and the silicon material can be added after any silicon rod is grown. Therefore, the single crystal furnace provided by the embodiment of the invention can realize charging without stopping the furnace so as to continuously grow a plurality of crystals, so that the time required by the steps of furnace stopping, cooling, furnace cleaning, charging, vacuumizing, material melting and the like is saved, the whole process is mechanically and fully automatically controlled, manual participation is not needed, the production efficiency is greatly improved, and the utilization rate of the quartz crucible is improved. Through tests, after the invention is adopted, more than 7 single crystal rods (with the length of 4.3 meters of 8 inch single rod) can be pulled by a single furnace, and the cost is effectively reduced by about 40 percent.
In addition, the continuous feeding apparatus 100 is fixed to the column 200 without the support of the furnace body 300, so that the continuous feeding apparatus 100 can provide a larger feeding amount. For example, the volume of the hopper 30 may be 500 kg to 600 kg, which may support 1 or more pull cycles, greatly improving throughput. In addition, the doping and the feeding can be synchronously carried out, which is beneficial to the improvement of the quality of the crystal.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. A continuous feeding device of a single crystal furnace is characterized in that: comprising
The top of the outer shell is provided with a charging port, and the outer wall of the outer shell is provided with a hoisting interface;
the bracket is fixed in the outer shell;
the hopper is supported on the bracket, and a discharge hole is formed in the bottom of the hopper;
the upper port of the feeding pipe is positioned in the outer shell, and the lower port of the feeding pipe extends out of the bottom of the outer shell;
the silicon material conveying device is positioned in the outer shell and is in sealing connection with the discharge port and the upper port of the feeding pipe;
one end of the doping tube is positioned outside the shell body, and the other end of the doping tube is positioned above the upper port of the charging tube and is in sealing connection with the upper port of the charging tube; a kind of electronic device with high-pressure air-conditioning system
And the locating pin is fixed at the bottom of the outer shell.
2. The continuous feeding apparatus of single crystal furnace according to claim 1, wherein the inner wall of the hopper is provided with a protective lining.
3. The continuous feeding apparatus of single crystal furnace according to claim 1, wherein the outer portion of the lower port is sleeved with a bellows fixed to the outer housing.
4. The continuous feeding device of a single crystal furnace according to claim 1, wherein a silicon material distributor is further arranged above the discharge port, and the silicon material distributor is a cone.
5. The continuous feeding apparatus of single crystal furnace according to claim 1, further comprising an adapter having an inner cavity, wherein the feeding tube, the silicon material conveying device and the doping tube are inserted into the inner cavity of the adapter.
6. The continuous feeding device of a single crystal furnace according to claim 5, further comprising a connecting frame, wherein the adapter, the silicon material conveying device and the hopper are fixedly connected with the connecting frame, the connecting frame is supported by the bracket, and a weighing sensor is further arranged between the connecting frame and the bracket.
7. The continuous feeding device of a single crystal furnace according to claim 1, wherein the outer shell is further provided with a vacuumizing port, an argon gas interface, a vacuum gauge mounting interface and an observation window.
8. The continuous feeding apparatus of a single crystal furnace according to claim 1, wherein the lifting structure is a guide rail or a slider.
9. The continuous feeding device of a single crystal furnace according to claim 1, wherein the silicon material conveying device comprises a vertical pipe and a horizontal pipe which are communicated with the discharge port, a vibrating feeder is arranged in the horizontal pipe, the horizontal pipe is communicated with the vertical pipe, and the horizontal pipe is provided with an outlet which is positioned above an upper port of the feeding pipe.
10. A single crystal furnace, comprising a furnace body, a column and the continuous feeding device as claimed in any one of claims 1-9, wherein the column is provided with a guide member and a lifting mechanism, the lifting interface is slidably connected to the guide member and driven to lift by the lifting mechanism, and the positioning pin is matched with the furnace body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811363620.6A CN109183140B (en) | 2018-11-16 | 2018-11-16 | Single crystal furnace and continuous feeding device thereof |
Applications Claiming Priority (1)
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| CN112126974A (en) * | 2020-11-02 | 2020-12-25 | 西安邦泰电子技术有限公司 | Feeding equipment for single crystal furnace |
| US11499245B2 (en) * | 2020-12-30 | 2022-11-15 | Globalwafers Co., Ltd. | Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems |
| CN113279051A (en) * | 2021-04-25 | 2021-08-20 | 弘元新材料(包头)有限公司 | Feeding proportioning device for large-size single crystal segment taking and feeding |
| CN114438584B (en) * | 2022-01-17 | 2022-12-02 | 徐州晶睿半导体装备科技有限公司 | Multi-time feeding system and method for single crystal furnace |
| CN114395795B (en) * | 2022-01-18 | 2023-11-24 | 晶澳(无锡)光伏科技有限公司 | Charging device for single crystal furnace |
| CN114411241B (en) * | 2022-03-11 | 2023-12-22 | 浙江精工集成科技股份有限公司 | Single crystal furnace feeding device |
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