CN204174307U - A kind of outside charging structure - Google Patents
A kind of outside charging structure Download PDFInfo
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- CN204174307U CN204174307U CN201420520573.2U CN201420520573U CN204174307U CN 204174307 U CN204174307 U CN 204174307U CN 201420520573 U CN201420520573 U CN 201420520573U CN 204174307 U CN204174307 U CN 204174307U
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Abstract
The utility model relates to the utility appliance of equipment for Czochralski silicon growth, aims to provide a kind of outside charging structure.After this kind of outside charging structure is used for that quartz crucible is connected sealing with vacuum (-tight) housing, integral hoisting is put into or is taken out thermal field of single crystal furnace; The main body of outside charging structure comprises seed crystal system in single crystal growing furnace and rotating mechanism, seed crystal system is arranged on secondary furnace chamber, seed crystal system utilizes wireline to be connected with the suspension ring on vacuum (-tight) housing, realize to connect sealing after quartz crucible and vacuum (-tight) housing entirety carry out up-and-down movement; Rotating mechanism is rotated for driving secondary furnace chamber, and then drives the seed crystal system be arranged on secondary furnace chamber to be rotated, and the quartz crucible after realization is lifted on the connection sealing in seed crystal system and vacuum (-tight) housing entirety complete rotary motion and up-and-down movement.The utility model does not need to increase additionally to lift utility appliance, make use of the intrinsic seed crystal system of single crystal growing furnace and secondary furnace chamber rotating mechanism, can effectively realize crucible oven and feed outward.
Description
Technical field
The utility model is the utility appliance about equipment for Czochralski silicon growth, particularly the outside charging structure of one.
Background technology
Crystalline silicon material is usually used in the original material of unicircuit, and the method for typical production silicon single crystal is vertical pulling method.And single crystal growing furnace is polysilicon is converted into the required equipment of silicon single crystal technique.Single crystal growing furnace vertical pulling method is melted in quartz crucible by polycrystalline silicon raw material, melt completely after temperature reaches balance at polysilicon, bar-like single crystal silicon is slowly put into liquid level, a part is soaked in the solution, at a suitable temperature, the Siliciumatom of melted silicon along with its atomic arrangement structure is in solution surface crystallization under the impact of seed crystal, can form silicon single-crystal.Upwards being mentioned stably by monocrystalline by seed crystal system and add suitable rotation, under stable environment, silicon solution can continuously crystallization, finally forms the silicon single crystal of a body cylindrical shape.
Charging mostly adopts and quartz crucible is put into furnace chamber, then puts into the method for quartz crucible with polycrystal raw material.Fall into thermal field affect thermal field work-ing life for preventing from damaging quartz crucible and raw material chip, material must slowly be put down gently, causes charging process time and effort consuming.In order to reduce charge time, reducing the working strength of operative employee, market using additional auxiliary machinery car usually, outside stove, installs silicon material again quartz crucible is put into furnace chamber.
Utility model content
Main purpose of the present utility model is to overcome deficiency of the prior art, provides and can shorten charge time and charging process safe outside charging mechanism simple to operate.For solving the problems of the technologies described above, solution of the present utility model is:
A kind of outside charging structure is provided, for quartz crucible is connected sealing with vacuum (-tight) housing after, integral hoisting is put into or is taken out thermal field of single crystal furnace, it is characterized in that, vacuum (-tight) housing is provided with suspension ring and air inlet/outlet, air inlet/outlet is connected with vacuum valve, and the other end Link Port of vacuum valve is connected with vacuum pump by corrugated tube, and vacuum valve is for controlling the opening and closing of air inlet/outlet; Vacuum (-tight) housing is provided with sealing-ring, and is tightly connected by sealing-ring and quartz crucible, the enclosed housing that vacuum pump is used for quartz crucible and vacuum (-tight) housing are formed is evacuated; Vacuum (-tight) housing is also provided with vacuum meter, and vacuum meter is for measuring the barometric point in the enclosed housing of quartz crucible and vacuum pad formation;
The main body of described outside charging structure is hoisting mechanism, and hoisting mechanism comprises seed crystal system in single crystal growing furnace and rotating mechanism, and hoisting mechanism utilizes the suspension ring on vacuum (-tight) housing, realizes lifting the quartz crucible after connecting sealing and vacuum (-tight) housing entirety;
Described seed crystal system is arranged on secondary furnace chamber, seed crystal system comprises motor, belt wheel, clutch coupling, encoder, LOAD CELLS, seed crystal system utilizes wireline to be connected with the suspension ring on vacuum (-tight) housing, realize to connect sealing after quartz crucible and vacuum (-tight) housing entirety carry out up-and-down movement; Described motor is provided with two, and two different motors are for providing two kinds of not clear lifting speed, and described belt wheel and clutch coupling are used for carrying out selection of Motor, to reach different rising or falling speeds; Described encoder is used for the position (namely referring to the junction of wireline and suspension ring) in positioning wire end portion and shows the distance be elevated, and conveniently carries out movement travel control; Described LOAD CELLS is for calculating the quality of the polycrystalline silicon raw material loaded in quartz crucible;
Described rotating mechanism is rotated for driving secondary furnace chamber, and then driving the seed crystal system be arranged on secondary furnace chamber to be rotated, the quartz crucible after realization is lifted on the connection sealing in seed crystal system and vacuum (-tight) housing entirety complete rotary motion and up-and-down movement; Rotating mechanism is also provided with limit switch, and limit switch is for controlling the angle of rotation of secondary furnace chamber.
As further improvement, the sealing-ring on described vacuum pad adopts L shape sealing-ring.
As further improvement, described corrugated tube is connected with vacuum valve adopting quick release flange.
As further improvement, described outside charging structure also comprises conveyer, for mobile quartz crucible; Conveyer adopts charging carriage, and charging carriage is provided with block and damping device, and damping device adopts shock spring.
Outside charging structure is utilized to carry out the control method of polycrystalline silicon charge, when the quartz crucible that polycrystalline silicon raw material is housed is lifted in thermal field of single crystal furnace, if the scope of weighing of LOAD CELLS is G, regard LOAD CELLS assembly as fixed pulley, the load of wireline is G1, the quality loading polycrystalline silicon raw material is G2, and the total mass of quartz crucible and vacuum (-tight) housing is G3, and the pressure that vacuum meter upward pressure value P produces is F (wherein P is 0.1 normal atmosphere);
When thermal field of single crystal furnace is 18 ~ 24 cun, the following formula of above-mentioned each value demand fulfillment: G1 >=G2+G3, G/2 >=G2+G3, F >=K (G2+G3); K is safety coefficient, and K gets 5 in process of production.
Compared with prior art, the beneficial effects of the utility model are:
The utility model patent does not need to increase additionally to lift utility appliance, make use of the intrinsic seed crystal system of single crystal growing furnace and secondary furnace chamber rotating mechanism, can effectively realize crucible oven and feed outward.
Fast, the slow speed motor of seed crystal system can provide two kinds of different rising or falling speeds; The weighing device of seed crystal system can be utilized to read the total mass of lifting crucible, calculate fed in raw material quality.
Secondary furnace chamber rotating mechanism can complete crucible and transfer in stove from stove, and to be spacingly positioned at accurately above main furnace chamber by it.
Accompanying drawing explanation
Fig. 1 is that quartz crucible is placed on charged schematic diagram on dolly.
Fig. 2 is the schematic diagram utilizing seed crystal system pull-up vacuum (-tight) housing and crucible.
Fig. 3 utilizes secondary furnace chamber rotating mechanism and the lifting of seed crystal system quartz crucible to be hung in schematic diagram in thermal field.
Reference numeral in figure is: 1 vacuum pump; 2 corrugated tubes; 3 vacuum valves; 4 suspension ring; 5 vacuum (-tight) housings; 6 vacuum meters; 7 sealing-rings; 8 quartz crucibles; 9 charging carriages; 10 seed crystal systems; 11 rotating mechanisms; 12 main furnace chambers.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail:
As shown in Figure 1, Figure 2, Figure 3 shows, after a kind of outside charging structure is used for that quartz crucible 8 is connected sealing with vacuum (-tight) housing 5, integral hoisting is put into or is taken out thermal field of single crystal furnace.Vacuum (-tight) housing 5 is provided with suspension ring 4 and air inlet/outlet, and air inlet/outlet is connected with vacuum valve 3, and the other end Link Port of vacuum valve 3 is connected with vacuum pump 1 by corrugated tube 2, and vacuum valve 3 is for controlling the opening and closing of air inlet/outlet; Vacuum (-tight) housing 5 is provided with special L shape sealing-ring 7, and is tightly connected by sealing-ring 7 and quartz crucible 8, vacuum pump 1 is evacuated for enclosed housing quartz crucible 8 and vacuum (-tight) housing 5 formed; Vacuum (-tight) housing 5 is also provided with vacuum meter 6, and vacuum meter 6 is for measuring the barometric point in the enclosed housing of quartz crucible 8 and vacuum pad formation.Corrugated tube 2 and vacuum valve 3 adopt quick-release mode of connection, the preferred quick release flange of quick-release mode of connection.
The main body of outside charging structure is hoisting mechanism, and hoisting mechanism comprises the intrinsic seed crystal system 10 of single crystal growing furnace and rotating mechanism 11, and hoisting mechanism utilizes the suspension ring 4 on vacuum (-tight) housing 5, realizes lifting the quartz crucible 8 after connecting sealing and vacuum (-tight) housing 5 entirety.
Described seed crystal system 10 is arranged on secondary furnace chamber, seed crystal system 10 comprises motor, belt wheel, clutch coupling, encoder, LOAD CELLS, seed crystal system 10 utilizes wireline to be connected with the suspension ring 4 on vacuum (-tight) housing 5, realize to connect sealing after quartz crucible 8 and vacuum (-tight) housing 5 entirety carry out up-and-down movement.Described motor is provided with two, two different motors are for providing two kinds of not clear lifting speed, described belt wheel and clutch coupling are used for carrying out selection of Motor, meet production technique to reach different rising or falling speeds and increase work efficiency, rapid movement avoids speed and causes decrease in efficiency excessively slowly, and microinching improves safety coefficient during placement.Described encoder is used for the position in positioning wire end portion and the distance of display lifting, and operator can be made to understand the distance of lifting, and in lifting process, effective controls movement stroke, further improves safety coefficient.Described LOAD CELLS is for calculating the quality of the polycrystalline silicon raw material loaded in quartz crucible 8.
Described rotating mechanism 11 is rotated for driving secondary furnace chamber, and then drive the seed crystal system 10 be arranged on secondary furnace chamber to be rotated, namely be equivalent to seed crystal system 10 rotate, the quartz crucible 8 after realization is lifted on the connection sealing in seed crystal system 10 and vacuum (-tight) housing 5 entirety complete rotary motion and up-and-down movement simultaneously.Rotating mechanism 11 is also provided with limit switch, and limit switch is for controlling the angle of rotation of secondary furnace chamber.Quartz crucible 8 is connected in seed crystal system 10 by wireline, quartz crucible 8 is when following rotating mechanism 11 and moving, work because auxiliary furnace of mono-crystal furnace chamber has been aligned in main furnace chamber 12 uppermost limit point, in like manner this position quartz crucible 8 is in directly over main furnace chamber 12, without the need to reaffirming vertical direction position.
Outside charging mechanism also comprises the conveyer for mobile quartz crucible 8, adopts charging carriage 9 as conveyer here.Charging carriage 9 is provided with block and damping device, can avoid in transportation because vibrations cause damage to quartz crucible 8.Here adopt shock spring as damping device.
When the quartz crucible 8 filling polycrystalline silicon raw material is lifted in thermal field of single crystal furnace, if the scope of weighing of LOAD CELLS is G, regard LOAD CELLS assembly as fixed pulley, the load of wireline is G1, the quality loading polycrystalline silicon raw material is G2, the total mass of quartz crucible 8 and vacuum (-tight) housing 5 is G3, and the pressure that vacuum meter 6 upward pressure value P produces is F (wherein P is 0.1 normal atmosphere).
For the thermal field of single crystal furnace of 18 ~ 24 cun, the following formula of above-mentioned each value demand fulfillment:
G1≥G2+G3；
G/2≥G2+G3；
F >=K (G2+G3); K is safety coefficient, and K gets 5 in process of production.
The reactive force that above formula identity LOAD CELLS, wireline and vacuum (-tight) housing 5 and the negative pressure of quartz crucible 8 produce can bear the total mass of silicon material and quartz crucible 8, vacuum (-tight) housing 5.Guarantee lifting process safety.
Single crystal furnace seed crystal wireline and quartz crucible 8 are in concentric, without the need to adjusting quartz crucible 8 position after quartz crucible 8 is rotated by secondary furnace chamber rotating mechanism 11.The two coordinates replaceable original lifting utility appliance.
The outer charging process of stove:
First quartz crucible 8 is sealed off inspection to be placed on well on charging carriage 9, travelling car 9 to specified location is feeded, toward quartz crucible 8 li dress polycrystalline silicon raw material, after filling, on quartz crucible 8, sealing-ring 7 is sticked on edge, vacuum (-tight) housing 5 is covered on the quartz crucible 8 posting sealing-ring 7, the Link Port of manual vacuum valve 3 connects corrugated tube 2, the other end of corrugated tube 2 connects vacuum pump 1, at this moment vacuum pump 1 can be opened, then slowly manual vacuum valve 3 is opened, observe the pointer change of vacuum meter 6, manual vacuum valve 3 is fastened as the close-0.1MPa of pointer, close vacuum pump 1 and then remove the corrugated tube 2 that manual vacuum valve 3 Link Port connects, place 10 minutes, observing vacuum meter 6 pointer has unchanged, to be confirmed whether gas leakage.
After confirming that the airtight cavity of quartz crucible 8 and vacuum (-tight) housing 5 composition is air tight, charging carriage 9 is shifted onto the specified location on single crystal growing furnace 11 side needing charging, fast by seed crystal system 10, cooperation makes lifting that vacuum pad 5 is promoted to height when main furnace chamber 12 elevation-over together with the polycrystalline silicon raw material of quartz crucible 8 and its inside at a slow speed, rotarily driving quartz crucible 8 by secondary furnace chamber rotating mechanism 11 rotates to main furnace chamber 12, be elevated by seed crystal again in the graphite crucible hung in stably in main furnace chamber 12, the distance of the height that the encoder record that can be carried by seed crystal system 10 in this process is risen and decline, the quality of this time feeding can be calculated by LOAD CELLS, then slowly open manual vacuum valve 3 to start to inflate in airtight cavity, observe the change of vacuum meter 6 pointer, when it gets back to starting position, inflation completes, then by seed crystal system 10 vacuum pad 5 sling and remove, take away sealing-ring 7, namely the outside charging process of whole monocrystaline silicon stove is completed.
Finally, it should be noted that above what enumerate is only specific embodiment of the utility model.Obviously, the utility model is not limited to above embodiment, can also have a lot of distortion.All distortion that those of ordinary skill in the art can directly derive or associate from content disclosed in the utility model, all should think protection domain of the present utility model.
Claims (4)
1. an outside charging structure, for quartz crucible is connected sealing with vacuum (-tight) housing after, integral hoisting is put into or is taken out thermal field of single crystal furnace, it is characterized in that, vacuum (-tight) housing is provided with suspension ring and air inlet/outlet, air inlet/outlet is connected with vacuum valve, and the other end Link Port of vacuum valve is connected with vacuum pump by corrugated tube, and vacuum valve is for controlling the opening and closing of air inlet/outlet; Vacuum (-tight) housing is provided with sealing-ring, and is tightly connected by sealing-ring and quartz crucible, the enclosed housing that vacuum pump is used for quartz crucible and vacuum (-tight) housing are formed is evacuated; Vacuum (-tight) housing is also provided with vacuum meter, and vacuum meter is for measuring the barometric point in the enclosed housing of quartz crucible and vacuum pad formation;
The main body of described outside charging structure is hoisting mechanism, and hoisting mechanism comprises seed crystal system in single crystal growing furnace and rotating mechanism, and hoisting mechanism utilizes the suspension ring on vacuum (-tight) housing, realizes lifting the quartz crucible after connecting sealing and vacuum (-tight) housing entirety;
Described seed crystal system is arranged on secondary furnace chamber, seed crystal system comprises motor, belt wheel, clutch coupling, encoder, LOAD CELLS, seed crystal system utilizes wireline to be connected with the suspension ring on vacuum (-tight) housing, realize to connect sealing after quartz crucible and vacuum (-tight) housing entirety carry out up-and-down movement; Described motor is provided with two, and two different motors are for providing two kinds of not clear lifting speed, and described belt wheel and clutch coupling are used for carrying out selection of Motor, to reach different rising or falling speeds; Described encoder is used for the position in positioning wire end portion and the distance of display lifting, conveniently carries out movement travel control; Described LOAD CELLS is for calculating the quality of the polycrystalline silicon raw material loaded in quartz crucible;
Described rotating mechanism is rotated for driving secondary furnace chamber, and then driving the seed crystal system be arranged on secondary furnace chamber to be rotated, the quartz crucible after realization is lifted on the connection sealing in seed crystal system and vacuum (-tight) housing entirety complete rotary motion and up-and-down movement; Rotating mechanism is also provided with limit switch, and limit switch is for controlling the angle of rotation of secondary furnace chamber.
2. the outside charging structure of one according to claim 1, is characterized in that, the sealing-ring on described vacuum pad adopts L shape sealing-ring.
3. the outside charging structure of one according to claim 1, is characterized in that, described corrugated tube is connected with vacuum valve adopting quick release flange.
4. the outside charging structure of one according to claim 1, is characterized in that, described outside charging structure also comprises conveyer, for mobile quartz crucible; Conveyer adopts charging carriage, and charging carriage is provided with block and damping device, and damping device adopts shock spring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420520573.2U CN204174307U (en) | 2014-09-11 | 2014-09-11 | A kind of outside charging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420520573.2U CN204174307U (en) | 2014-09-11 | 2014-09-11 | A kind of outside charging structure |
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| CN204174307U true CN204174307U (en) | 2015-02-25 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104250848A (en) * | 2014-09-11 | 2014-12-31 | 浙江晶盛机电股份有限公司 | Control method for utilizing external charging structure to charge polysilicon |
| CN108385159A (en) * | 2018-05-31 | 2018-08-10 | 峨眉山市元素新材料科技有限公司 | A kind of single crystal growing furnace sample adding device of side sample-adding |
| CN113308746A (en) * | 2021-05-28 | 2021-08-27 | 曲靖阳光能源硅材料有限公司 | Automatic feeding vehicle for single crystal furnace |
| CN114622273A (en) * | 2022-04-08 | 2022-06-14 | 宁夏中晶半导体材料有限公司 | External charging device and method for installing horizontal magnetic field single crystal furnace |
| US20230243588A1 (en) * | 2022-01-30 | 2023-08-03 | Zhejiang Jingsheng M & E Co., Ltd | Single crystal furnace |
-
2014
- 2014-09-11 CN CN201420520573.2U patent/CN204174307U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104250848A (en) * | 2014-09-11 | 2014-12-31 | 浙江晶盛机电股份有限公司 | Control method for utilizing external charging structure to charge polysilicon |
| CN108385159A (en) * | 2018-05-31 | 2018-08-10 | 峨眉山市元素新材料科技有限公司 | A kind of single crystal growing furnace sample adding device of side sample-adding |
| CN113308746A (en) * | 2021-05-28 | 2021-08-27 | 曲靖阳光能源硅材料有限公司 | Automatic feeding vehicle for single crystal furnace |
| US20230243588A1 (en) * | 2022-01-30 | 2023-08-03 | Zhejiang Jingsheng M & E Co., Ltd | Single crystal furnace |
| US11821690B2 (en) * | 2022-01-30 | 2023-11-21 | Zhejiang Jingsheng M & E Co., Ltd | Single crystal furnace |
| CN114622273A (en) * | 2022-04-08 | 2022-06-14 | 宁夏中晶半导体材料有限公司 | External charging device and method for installing horizontal magnetic field single crystal furnace |
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