CN108385159A - A kind of single crystal growing furnace sample adding device of side sample-adding - Google Patents
A kind of single crystal growing furnace sample adding device of side sample-adding Download PDFInfo
- Publication number
- CN108385159A CN108385159A CN201810546875.XA CN201810546875A CN108385159A CN 108385159 A CN108385159 A CN 108385159A CN 201810546875 A CN201810546875 A CN 201810546875A CN 108385159 A CN108385159 A CN 108385159A
- Authority
- CN
- China
- Prior art keywords
- single crystal
- sample
- crystal growing
- growing furnace
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 238000007789 sealing Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 17
- 239000011261 inert gas Substances 0.000 claims description 9
- 239000011343 solid material Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 238000002231 Czochralski process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006052 feed supplement Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000009469 supplementation Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000233855 Orchidaceae Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to single crystal growing furnace technical fields, and in particular to a kind of single crystal growing furnace sample adding device of side sample-adding.For the problem that the mode in the prior art, being loaded from single crystal growing furnace side causes charging rate to reduce and influences monocrystalline quality, the technical scheme is that：Including furnace chamber and vertical pulling room, crucible is provided in furnace chamber, it is provided with guide shell above crucible, the furnace chamber side is provided with sealed gate, sealed gate is outwardly and inwardly respectively arranged with external sealing flange and internal flange, quartzy guide pipe is connected on the internal flange, the end of quartzy guide pipe is located between the upper edge and guide shell of crucible；Vacuum charging case is connected on external sealing flange.The present invention is suitable for single crystal growing furnace.
Description
Technical field
The invention belongs to single crystal growing furnace technical fields, and in particular to a kind of single crystal growing furnace sample adding device of side sample-adding.
Background technology
Single crystal growing furnace be one kind in inert gas (based on nitrogen, helium) environment, it is with graphite heater that polysilicon etc. is more
Brilliant material fusing, with the equipment of Grown by CZ Method dislocation-free monocrystalline.It is contained in a crucible after polycrystalline material fusing, and solid
The molten mass volume formed after the melting of the semi-conducting materials such as silicon can reduce.Therefore in order to improve production efficiency, many single crystal growing furnaces are all
Solid material can repeatedly be added makes the molten mass contained in crucible more, so as to once produce more monocrystal rods, with
Improve production efficiency.
Existing single crystal growing furnace sample adding device is mostly to be inserted into sample injector, and one side from single crystal growing furnace Upper vertical before lifting starts
Molten solids raw material, constantly supplements solid material by sample injector on one side.Molten mass filling it is enough after, take out sample injector into
Row czochralski process.It is necessary when substantially or being once loaded, and being loaded although this mode can repeatedly supplement solid material
Vacuum drops, thus it is limited to the castering action of production efficiency.
In addition, a kind of device being loaded from side to crucible has also been devised in people, its main feature is that not influencing crucible just
The czochralski process of top is expected to realize and supplements solid material during lifting, greatly improves production efficiency.But it this sets
Meter can be stretched into using feed pipe and the setting for the single crystal growing furnace that contracts, and feed pipe is on the one hand caused to use the structure of casing in this way so that
Bore is restricted, and reduces the speed of charging；The another aspect feed pipe flexible time needed in place is longer, and the dress that feeds
The air-tightness set is not so good as the ontology of single crystal growing furnace, and final so that the air-tightness of single crystal growing furnace entirety declines, cause admits air into single crystal growing furnace
It is interior, influence the quality of monocrystalline production.
Invention content
Cause charging rate to reduce for the mode in the prior art, being loaded from single crystal growing furnace side and influence monocrystalline quality
Problem, the present invention provide a kind of single crystal growing furnace sample adding device of side sample-adding, its object is to：What raising was loaded from single crystal growing furnace side
Speed, and reduce influence of the sample adding device to single crystal growing furnace air-tightness.
The technical solution adopted by the present invention is as follows：
A kind of single crystal growing furnace sample adding device of side sample-adding, including furnace chamber and vertical pulling room, are provided with crucible in furnace chamber, on crucible
Side is provided with guide shell, and the furnace chamber side is provided with sealed gate, and sealed gate is outwardly and inwardly respectively arranged with outside
Sealing flange and internal flange are connected with quartzy guide pipe on the internal flange, and the end of quartzy guide pipe is located at crucible
Between upper edge and guide shell；Vacuum charging case is connected on external sealing flange.
After the technical solution, the solid material required supplementation with is added in vacuum charging case in advance, and make vacuum
Vacuum degree and atmosphere in charging box is consistent in furnace chamber.In process of production, when needing charging, sealed gate is opened,
Solid material enters by quartzy guide pipe in crucible at this time.The advantages of this mode is that only need to control sealed gate can be into
Row, it is quick and convenient, not only improved efficiency but reduce feed during air enter the possibility of furnace chamber.In addition, sealed gate
When closing, furnace chamber and vacuum charging case are independent from each other two sealing systems, when carrying out single crystal pulling operation in furnace chamber, very
The operation that empty charging box can carry out feed supplement, vacuumize and be passed through inert gas, thus the setting can further increase production effect
Rate.
Preferably, the side of crucible is provided with melt chamber, is connected to inside the bottom of melt chamber and crucible, and the quartz is oriented to
The end of pipe is located at the top of melt chamber.After the preferred embodiment, the inside of crucible is divided into progress list using a partition board
The main part of crystalline substance lifting and the melt chamber for reinforcing body raw material.Melt chamber, which is added, in solid material to avoid solid material from falling
The czochralski process of monocrystalline will be influenced when lower to the impact of molten mass.
Preferably, sealed gate is electromagnetism gate.Electromagnetic brake gate system is more convenient.
Preferably, the bottom surface of vacuum charging case is set as an inclined-plane, and external sealing flange is located at the bottom on inclined-plane.Using
The preferred embodiment enables solid material to automatically fall into crucible under gravity.
Preferably, the top of vacuum charging case is provided with inert gas tube and vacuum tube.Inert gas tube is to vacuum charging
Inert gas is passed through in case；Vacuum tube can carry out vacuumize process to vacuum charging case.
Preferably, it is provided with hermatic door at the top of vacuum charging case.It is provided with charge door at the top of vacuum charging case, feeds
Hermatic door is arranged on mouth can ensure the air-tightness of vacuum charging case.
It is further preferred that being provided with feeder above hermatic door.Feeder is used for auto feed, can further carry
High efficiency.
It is further preferred that feeder includes shell, hopper is provided in shell, shell and feed hopper bottom are provided with position
The opening being mutually matched, the opening are located above hermatic door, and material plug, the material plug are provided in the opening of the feed hopper bottom
Lower dimension is more than upper dimension, expects that the top of plug is provided with drawstring.When being fed, hermatic door is first opened, reducing material plug is
It can feed；When stopping charging, the opening of feed hopper bottom can be blocked using drawstring pull-up material plug.The preferred embodiment, which has, to be easy to control
System, easy to operate advantage.
In conclusion by adopting the above-described technical solution, the beneficial effects of the invention are as follows：
1. needing to control sealed gate can carry out, quick and convenient, during not only having improved efficiency but also having reduced charging
Air enters the possibility of furnace chamber.
2. furnace chamber and vacuum charging case are independent from each other two sealing systems, single crystal pulling operation is carried out in furnace chamber
When, the operation that vacuum charging case can carry out feed supplement, vacuumize and be passed through inert gas, thus the setting can further increase life
Produce efficiency.
3. solid material is added when melt chamber can avoid solid material from falling and influences monocrystalline to the impact of molten mass
Czochralski process.
4. electromagnetic brake gate system is more convenient.
5. enabling solid material to automatically fall into crucible under gravity using the preferred embodiment.
6. feeder is used for auto feed, production efficiency can be further increased.
7. fed, hermatic door is first opened, reducing material plug can feed；When stopping charging, drawstring pull-up material is utilized
Plug can block the opening of feed hopper bottom.The preferred embodiment has easily controllable, easy to operate advantage.
Description of the drawings
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein：
Fig. 1 is the structural schematic diagram of the embodiment of the present invention 1；
Fig. 2 is the structural schematic diagram of the embodiment of the present invention 2.
Wherein, 1- vertical pullings room, 2- guide shells, 3- furnace chambers, 4- crucibles, 5- heating devices, 6- quartz guide pipes, 7- internal laws
Orchid, 8- sealed gates, the outsides 9- sealing flange, the inclined-planes 10-, 11- vacuum charging casees, 12- vacuum tubes, 13- inert gas tubes,
14- hermatic doors, 15- melt chambers, 16- hoppers, 17- material plugs, 18- shells.
Specific implementation mode
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
It elaborates to the present invention with reference to Fig. 1, Fig. 2.
Embodiment 1
A kind of single crystal growing furnace sample adding device of side sample-adding, including furnace chamber 3 and vertical pulling room 1 are provided with crucible 4, earthenware in furnace chamber 3
4 surrounding of crucible is provided with heating device.4 top of crucible is provided with guide shell 2, and 3 side of the furnace chamber is provided with sealed gate 8, close
Envelope gate 8 is electromagnetism gate.Sealed gate 8 is outwardly and inwardly respectively arranged with external sealing flange 9 and internal flange 7, institute
State and be connected with quartzy guide pipe 6 on internal flange 7, the end of quartzy guide pipe 6 be located at crucible 4 upper edge and guide shell 2 it
Between.
The side of the crucible 4 is provided with melt chamber 15, and the bottom of melt chamber 15 is connected to 4 inside of crucible, the quartz
The end of guide pipe 6 is located at the top of melt chamber 15.
Vacuum charging case 11 is connected on external sealing flange 9.The bottom surface of the vacuum charging case 11 is set as one tiltedly
Face 10, external sealing flange 9 are located at the bottom on inclined-plane 10.The top of vacuum charging case 11 is provided with inert gas tube 13 and true
Blank pipe 12.The top of vacuum charging case 11 is provided with the charge door for charging, and hermatic door 14 is provided on charge door.
When the present embodiment works, the solid material required supplementation with is added in vacuum charging case 11 in advance, and make vacuum
Vacuum degree and atmosphere in charging box 11 is consistent in furnace chamber 3.In process of production, when needing charging, sealing lock is opened
Door 8, at this time in the quartzy entrance of guide pipe 6 crucible 4 of solid material process.When stopping charging, only sealed gate 8 need to be closed.
Embodiment 2
On the basis of embodiment 1, the top of the hermatic door 14 is provided with feeder.Feeder includes shell 18, outside
Hopper 16 is provided in shell 18, shell 18 and 16 bottom of hopper are provided with the opening that position is mutually matched, and the opening is located at close
Above closure door 14, material plug 17 is provided in the opening of 16 bottom of the hopper, 17 lower dimension of material plug is more than upper dimension,
The top of material plug 17 is provided with drawstring.
When being fed, hermatic door 14 is first opened, reducing material plug 17 can feed；When stopping charging, drawstring pull-up is utilized
Material plug 17 can block the opening of 16 bottom of hopper.
The specific implementation mode of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Cannot the limitation to the application protection domain therefore be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, under the premise of not departing from technical scheme design, various modifications and improvements can be made, these belong to this
The protection domain of application.
Claims (8)
1. a kind of single crystal growing furnace sample adding device of side sample-adding, including furnace chamber (3) and vertical pulling room (1), furnace chamber are provided with crucible in (3)
(4), it is provided with guide shell (2) above crucible (4), it is characterised in that：Furnace chamber (3) side is provided with sealed gate (8), close
Envelope gate (8) is outwardly and inwardly respectively arranged with external sealing flange (9) and internal flange (7), on the internal flange (7)
It is connected with quartzy guide pipe (6), the end of quartzy guide pipe (6) is located between the upper edge of crucible (4) and guide shell (2)；It is external
Vacuum charging case (11) is connected on sealing flange (9).
2. a kind of single crystal growing furnace sample adding device of side sample-adding described in accordance with the claim 1, it is characterised in that：The crucible (4)
Side be provided with melt chamber (15), be connected to inside the bottom of melt chamber (15) and crucible (4), the quartzy guide pipe (6)
End is located at the top of melt chamber (15).
3. a kind of single crystal growing furnace sample adding device of side sample-adding described in accordance with the claim 1, it is characterised in that：The sealed gate
(8) it is electromagnetism gate.
4. a kind of single crystal growing furnace sample adding device of side sample-adding described in accordance with the claim 1, it is characterised in that：The vacuum charging
The bottom surface of case (11) is set as an inclined-plane (10), and external sealing flange (9) is located at the bottom on inclined-plane (10).
5. a kind of single crystal growing furnace sample adding device of side sample-adding described in accordance with the claim 1, it is characterised in that：The vacuum charging
The top of case (11) is provided with inert gas tube (13) and vacuum tube (12).
6. according to a kind of single crystal growing furnace sample adding device of side sample-adding described in claim 1 or 5, it is characterised in that：The vacuum
Hermatic door (14) is provided at the top of charging box (11).
7. a kind of single crystal growing furnace sample adding device of side sample-adding according to claim 6, it is characterised in that：The hermatic door
(14) feeder is provided with above.
8. a kind of single crystal growing furnace sample adding device of side sample-adding according to claim 7, it is characterised in that：The feeder packet
Shell (18) is included, hopper (16) is provided in shell (18), shell (18) and hopper (16) bottom are provided with position and are mutually matched
Opening, the opening is located above hermatic door (14), and material plug (17) is provided in the opening of hopper (16) bottom, described
Material plug (17) lower dimension is more than upper dimension, and the top of material plug (17) is provided with drawstring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810546875.XA CN108385159A (en) | 2018-05-31 | 2018-05-31 | A kind of single crystal growing furnace sample adding device of side sample-adding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810546875.XA CN108385159A (en) | 2018-05-31 | 2018-05-31 | A kind of single crystal growing furnace sample adding device of side sample-adding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108385159A true CN108385159A (en) | 2018-08-10 |
Family
ID=63071602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810546875.XA Pending CN108385159A (en) | 2018-05-31 | 2018-05-31 | A kind of single crystal growing furnace sample adding device of side sample-adding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108385159A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109321983A (en) * | 2018-10-12 | 2019-02-12 | 徐州华奥纺织有限公司 | A kind of bell of single crystal growing furnace |
| CN111434810A (en) * | 2019-01-14 | 2020-07-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Supplementing mechanism, system and method for continuously growing nitride object single crystal by flux method |
| CN113584573A (en) * | 2021-08-17 | 2021-11-02 | 江苏神汇新型陶瓷材料科技有限公司 | External impurity-absorbing feeding method for single crystal furnace |
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| JPS60154861A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Device for supplying raw material |
| CN202530195U (en) * | 2012-03-13 | 2012-11-14 | 杭州奔博科技有限公司 | Feeding device for single crystal furnace |
| CN204174307U (en) * | 2014-09-11 | 2015-02-25 | 浙江晶盛机电股份有限公司 | A kind of outside charging structure |
| CN107381060A (en) * | 2017-07-31 | 2017-11-24 | 四川聚能核技术工程有限公司 | Powder material automatic feeding device and method under a kind of new type high temperature vacuum environment |
-
2018
- 2018-05-31 CN CN201810546875.XA patent/CN108385159A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60154861A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Device for supplying raw material |
| CN202530195U (en) * | 2012-03-13 | 2012-11-14 | 杭州奔博科技有限公司 | Feeding device for single crystal furnace |
| CN204174307U (en) * | 2014-09-11 | 2015-02-25 | 浙江晶盛机电股份有限公司 | A kind of outside charging structure |
| CN107381060A (en) * | 2017-07-31 | 2017-11-24 | 四川聚能核技术工程有限公司 | Powder material automatic feeding device and method under a kind of new type high temperature vacuum environment |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109321983A (en) * | 2018-10-12 | 2019-02-12 | 徐州华奥纺织有限公司 | A kind of bell of single crystal growing furnace |
| CN111434810A (en) * | 2019-01-14 | 2020-07-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Supplementing mechanism, system and method for continuously growing nitride object single crystal by flux method |
| CN113584573A (en) * | 2021-08-17 | 2021-11-02 | 江苏神汇新型陶瓷材料科技有限公司 | External impurity-absorbing feeding method for single crystal furnace |
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Application publication date: 20180810 |