CN207567377U - monocrystalline silicon feeding device - Google Patents
monocrystalline silicon feeding device Download PDFInfo
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- CN207567377U CN207567377U CN201721459505.XU CN201721459505U CN207567377U CN 207567377 U CN207567377 U CN 207567377U CN 201721459505 U CN201721459505 U CN 201721459505U CN 207567377 U CN207567377 U CN 207567377U
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- solenoid valve
- vacuum chamber
- monocrystalline silicon
- connecting tube
- feed pipe
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Abstract
The utility model is related to a kind of monocrystalline silicon feeding devices, including storage tank, storage tank lower end connects preheating chamber by the first connecting tube, first connecting tube is equipped with the first solenoid valve, preheating chamber lower end connects vacuum chamber by the second connecting tube, baroceptor is equipped in vacuum chamber, vacuum chamber side is equipped with exhaust tube, exhaust tube connects air extractor, second connecting tube is equipped with second solenoid valve, vacuum chamber lower end connects feed pipe, feed pipe is equipped with third solenoid valve, controller is equipped on the outside of storage tank, baroceptor, air extractor, third solenoid valve is respectively connect with controller.Since vacuum cause causes the accident when the utility model is solved the problems, such as due to preparing monocrystalline silicon, and the arrangement increases monocrystalline silicon preparation efficiencies.
Description
Technical field
The utility model is related to a kind of monocrystalline silicon feeding devices, belong to single silicon field.
Background technology
Monocrystalline silicon is prepared mostly by vertical pulling method, vertical pulling method, is also cried and is cut krousky (J.Czochralski) method.This
Method was early in a kind of growing method by cutting krousky foundation in 1917, with the equipment and technique of monocrystalline growth with czochralski
It is fairly simple, it is easy to implement to automatically control, impurity concentration in monocrystalline is easy to control, low resistivity single crystal can be prepared.
Vertical pulling method process is specially：The polycrystalline silicon raw material of high-purity is put into crucible, the high temperature generated by heater
It is melted；The silicon liquid of fusing is slightly done and is cooled down, is allowed to generate certain degree of supercooling, then the silicon being fixed on seed shaft with one
Monocrystal (being referred to as seed crystal) is inserted into bath surface, after seed crystal is merged with melt, slowly pulls up seed crystal, crystal will be in seed
Brilliant lower end growth；Control seeded growth goes out one section of length for 100mm or so, the thin neck of a diameter of 3~5mm, for eliminating height
The dislocation of atomic arrangement that warm solution generates the strong thermal shock of seed crystal, this process is exactly seeding；Amplify crystal diameter
To the size of technological requirement, generally 75~300mm, this process is known as shouldering；Pulling rate is improved suddenly to carry out turning shoulder operation,
Make shoulder approximate right angle；Into isometrical technique, by the way that temperature of thermal field and crystal is controlled to promote speed, certain diameter specification is grown
The monocrystalline cylinder of size；When most of silicon solution is completed to crystallize, then crystal is gradually reduced and forms a tail shape cone, claimed
For tailing-in technique；Such a crystal-pulling process is just basically completed, and can be taken out after carrying out certain heat preservation cooling.
During above-mentioned monocrystalline growth with czochralski silicon, the polycrystalline silicon raw material of high-purity is put into crucible, it is usually used
Charging ladle, detailed process are：High purity silicon raw material is transferred in charging ladle, and passes through seed crystal rope and slings charging ladle, upper furnace chamber
Vacuum is extracted after reset, then declines seed crystal to suitable position discharging, after further take out charging ladle.During aforesaid operations due to
It needs frequently to extract vacuum, trivial operations will cause an accident once some link goes wrong.
Utility model content
The technical problem to be solved by the present invention is to provide a kind of monocrystalline silicon feeding device, the monocrystalline silicon feeding device solutions
The problem of being caused the accident when having determined due to preparing monocrystalline silicon due to vacuum cause, and prepare and imitate the arrangement increases monocrystalline silicon
Rate.
In order to solve the above-mentioned technical problem, a kind of monocrystalline silicon feeding device of the utility model includes storage tank, storage tank
Lower end connects preheating chamber by the first connecting tube, and the first connecting tube is equipped with the first solenoid valve, preheating chamber lower end by the
Two connecting tubes connect vacuum chamber, and baroceptor is equipped in vacuum chamber, and vacuum chamber side is equipped with exhaust tube, exhaust tube connection pumping
Device, the second connecting tube are equipped with second solenoid valve, vacuum chamber lower end connection feed pipe, and feed pipe is equipped with third solenoid valve,
Controller is equipped on the outside of storage tank, baroceptor, air extractor, third solenoid valve are respectively connect with controller.
The feed pipe both sides are equipped with the fixing device for fixing feed pipe, and fixing device is slidably connected with feed pipe.
The preheating chamber inner wall, the second connection inside pipe wall, vacuum chamber interior walls, feeding inside pipe wall are equipped with insulating layer.
The controller is microcontroller.
The preheating chamber is in ellipticity.
The utility model with the above structure, has the following advantages：
1st, since preheating chamber lower end is by the second connecting tube connection vacuum chamber, vacuum chamber is interior to be equipped with baroceptor, very
Empty room side be equipped with exhaust tube, exhaust tube connection air extractor, baroceptor, air extractor, third solenoid valve respectively with
Controller connects, and intelligentized can control the indoor vacuum degree of vacuum in this way, and guarantee enters monocrystalline silicon charging and produced
Vacuum degree is remained in journey, avoids the generation of accident；
2nd, since storage tank lower end is by the first connecting tube connection preheating chamber, the first connecting tube is equipped with the first electromagnetism
Valve, preheating chamber lower end by the second connecting tube connect vacuum chamber, such single crystal silicon materials vacuum chamber carry out vacuum processing when,
Single crystal silicon materials just can in advance be preheated in preheating chamber, improve the efficiency of monocrystalline silicon production；
3rd, since feed pipe both sides are equipped with the fixing device for fixing feed pipe, fixing device is slided with feed pipe to be connected
It connects, such fixing device can control feed pipe to go deep into the position in monocrystaline silicon stove by sliding, and feed pipe simultaneously passes through fixed dress
It puts and is fixed on monocrystaline silicon stove.
Description of the drawings
The utility model is described in further detail with reference to the accompanying drawings and detailed description.
Fig. 1 is the structure diagram of the utility model.
Wherein have：1. monocrystaline silicon stove；2. crucible；3. storage tank；4. the first connecting tube；5. the first solenoid valve；6.
Preheating chamber；7. the second connecting tube；8. second solenoid valve；9. vacuum chamber；10. baroceptor；11. exhaust tube；12.
Air extractor；13. feed pipe；14. third solenoid valve；15. fixing device；16. controller.
Specific embodiment
This application involves following technical characteristics：Monocrystaline silicon stove 1；Crucible 2；Storage tank 3；First connecting tube 4；First solenoid valve
5；Preheating chamber 6；Second connecting tube 7；Second solenoid valve 8；Vacuum chamber 9；Baroceptor 10；Exhaust tube 11；Air extractor 12；
Feed pipe 13；Third solenoid valve 14；Fixing device 15；Controller 16.
Shown in Fig. 1, a kind of monocrystalline silicon feeding device, including storage tank, storage tank lower end is connected pre- by the first connecting tube
Hot chamber, the first connecting tube is equipped with the first solenoid valve, preheating chamber lower end connects vacuum chamber, vacuum chamber by the second connecting tube
Interior to be equipped with baroceptor, vacuum chamber side is equipped with exhaust tube, exhaust tube connection air extractor, and the second connecting tube is equipped with second
Solenoid valve, vacuum chamber lower end connection feed pipe, feed pipe are equipped with third solenoid valve, controller, air pressure are equipped on the outside of storage tank
Sensor, air extractor, third solenoid valve are respectively connect with controller.
The feed pipe both sides are equipped with the fixing device for fixing feed pipe, and fixing device is slidably connected with feed pipe.
The preheating chamber inner wall, the second connection inside pipe wall, vacuum chamber interior walls, feeding inside pipe wall are equipped with insulating layer.
The controller is microcontroller.
The preheating chamber is in ellipticity.
A kind of operating method of monocrystalline silicon feeding device, this method include the following steps：
Single crystal silicon materials are packed into storage tank by step 1；
Step 2, opens the first solenoid valve, and single crystal silicon materials are entered by the first connecting tube in preheating chamber；
Step 3, single crystal silicon materials open second solenoid valve, the monocrystalline silicon after preheating is former by being preheated in preheating chamber
Material is entered by the second connecting tube in vacuum chamber；
Step 4 closes second solenoid valve, the indoor baroceptor detection indoor air pressure of vacuum of vacuum, air pressure sensing
The air pressure of detection is transmitted to controller by device, if the air pressure detected in vacuum chamber is higher than the air pressure of vacuum standard, controller control
It closes third solenoid valve and starts air extractor simultaneously, until vacuum room pressure reaches vacuum standard, if being detected in vacuum chamber
Air pressure be less than vacuum standard air pressure, then controller control open third solenoid valve；
Step 5, the single crystal silicon materials for reaching vacuum standard are entered by feed pipe in the crucible in monocrystaline silicon stove.
Since preheating chamber lower end is by the second connecting tube connection vacuum chamber, vacuum chamber is interior to be equipped with baroceptor, vacuum
Room side be equipped with exhaust tube, exhaust tube connection air extractor, baroceptor, air extractor, third solenoid valve respectively with control
Device connection processed, intelligentized can control the indoor vacuum degree of vacuum in this way, and guarantee enters monocrystalline silicon charging and production process
In remain vacuum degree, avoid the generation of accident.Since storage tank lower end by the first connecting tube connects preheating chamber, the
One connecting tube is equipped with the first solenoid valve, preheating chamber lower end connects vacuum chamber, such single crystal silicon materials by the second connecting tube
When vacuum chamber carries out vacuum processing, single crystal silicon materials just can in advance be preheated in preheating chamber, improve monocrystalline silicon
The efficiency of production.In addition fixing device can control feed pipe to go deep into the position in monocrystaline silicon stove by sliding, and feed pipe simultaneously leads to
Fixing device is crossed to be fixed on monocrystaline silicon stove.
It is the prior art not have the technical characteristic being described in detail in the application.The application is only illustrated in above-described embodiment
Principles and effects, not for limitation the application.Any person skilled in the art all can be in the essence without prejudice to the application
God and under the scope of, to above-described embodiment carry out modifications and changes.Therefore, those of ordinary skill in the art is not taking off
It, should be by the right of the application from all equivalent modifications or change completed under spirit and technological thought disclosed herein
It is required that covered.
Claims (5)
1. a kind of monocrystalline silicon feeding device, it is characterised in that：Including storage tank, storage tank lower end is connected pre- by the first connecting tube
Hot chamber, the first connecting tube is equipped with the first solenoid valve, preheating chamber lower end connects vacuum chamber, vacuum chamber by the second connecting tube
Interior to be equipped with baroceptor, vacuum chamber side is equipped with exhaust tube, exhaust tube connection air extractor, and the second connecting tube is equipped with second
Solenoid valve, vacuum chamber lower end connection feed pipe, feed pipe are equipped with third solenoid valve, controller, air pressure are equipped on the outside of storage tank
Sensor, air extractor, third solenoid valve are respectively connect with controller.
2. monocrystalline silicon feeding device described in accordance with the claim 1, it is characterised in that：The feed pipe both sides are equipped with to fix
The fixing device of feed pipe, fixing device are slidably connected with feed pipe.
3. monocrystalline silicon feeding device described in accordance with the claim 1, it is characterised in that：The preheating chamber inner wall, the second connection
Inside pipe wall, vacuum chamber interior walls, feeding inside pipe wall are equipped with insulating layer.
4. monocrystalline silicon feeding device described in accordance with the claim 1, it is characterised in that：The controller is microcontroller.
5. monocrystalline silicon feeding device described in accordance with the claim 1, it is characterised in that：The preheating chamber is in ellipticity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721459505.XU CN207567377U (en) | 2017-11-06 | 2017-11-06 | monocrystalline silicon feeding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721459505.XU CN207567377U (en) | 2017-11-06 | 2017-11-06 | monocrystalline silicon feeding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207567377U true CN207567377U (en) | 2018-07-03 |
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ID=62692956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721459505.XU Active CN207567377U (en) | 2017-11-06 | 2017-11-06 | monocrystalline silicon feeding device |
Country Status (1)
| Country | Link |
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| CN (1) | CN207567377U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107794564A (en) * | 2017-11-06 | 2018-03-13 | 无锡乐东微电子有限公司 | Monocrystalline silicon feeding device and its operating method |
| CN109811411A (en) * | 2019-03-26 | 2019-05-28 | 四川联合晶体新材料有限公司 | System and method that is a kind of while growing two blocks of large-size sapphire single-crystal plate |
-
2017
- 2017-11-06 CN CN201721459505.XU patent/CN207567377U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107794564A (en) * | 2017-11-06 | 2018-03-13 | 无锡乐东微电子有限公司 | Monocrystalline silicon feeding device and its operating method |
| CN109811411A (en) * | 2019-03-26 | 2019-05-28 | 四川联合晶体新材料有限公司 | System and method that is a kind of while growing two blocks of large-size sapphire single-crystal plate |
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