CN107794564A - Monocrystalline silicon feeding device and its operating method - Google Patents
Monocrystalline silicon feeding device and its operating method Download PDFInfo
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- CN107794564A CN107794564A CN201711075980.1A CN201711075980A CN107794564A CN 107794564 A CN107794564 A CN 107794564A CN 201711075980 A CN201711075980 A CN 201711075980A CN 107794564 A CN107794564 A CN 107794564A
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- vacuum chamber
- vacuum
- connecting tube
- magnetic valve
- chamber
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention relates to a kind of monocrystalline silicon feeding device and its operating method, including storage tank, storage tank lower end connects preheating chamber by the first connecting tube, first connecting tube is provided with the first magnetic valve, preheating chamber lower end connects vacuum chamber by the second connecting tube, baroceptor is provided with vacuum chamber, vacuum chamber side is provided with exhaust tube, exhaust tube connects air extractor, second connecting tube is provided with second solenoid valve, vacuum chamber lower end connects feed pipe, feed pipe is provided with the 3rd magnetic valve, controller is provided with the outside of storage tank, baroceptor, air extractor, 3rd magnetic valve is respectively connected with controller.Operating method：Feed in storage tank, preheated in single crystal silicon materials preheating chamber, application of vacuum in single crystal silicon materials vacuum chamber, single crystal silicon materials are entered in the crucible in monocrystaline silicon stove.Because vacuum cause causes the accident when the present invention is solved the problems, such as due to preparing monocrystalline silicon, and the arrangement increases monocrystalline silicon preparation efficiency.
Description
Technical field
The present invention relates to a kind of monocrystalline silicon feeding device and its operating method, belong to single silicon field.
Background technology
Monocrystalline silicon is prepared by vertical pulling method mostly, vertical pulling method, is also cried and is cut krousky (J.Czochralski) method.This
Method was early in a kind of growing method by cutting krousky foundation in 1917, with the equipment and technique of monocrystalline growth with czochralski
It is fairly simple, easily realize and automatically control, be easily controlled impurity concentration in monocrystalline, low resistivity single crystal can be prepared.
Vertical pulling method process is specially：The polycrystalline silicon raw material of high-purity is put into crucible, passes through high temperature caused by heater
Melted；The silicon liquid of fusing is slightly done and cooled, is allowed to produce certain degree of supercooling, then with the silicon being fixed on seed shaft
Monocrystal (being referred to as seed crystal) insertion bath surface, after seed crystal merges with melt, slowly pulls up seed crystal, crystal will be in seed
Brilliant lower end growth；Seeded growth is controlled to go out one section of length for 100mm or so, a diameter of 3~5mm thin neck, for eliminating height
Strong thermal shock of the warm solution to seed crystal and the dislocation of caused atomic arrangement, this process is exactly seeding；Amplify crystal diameter
To the size of technological requirement, generally 75~300mm, this process is referred to as shouldering；Pulling rate is improved suddenly to carry out turning shoulder operation,
Make shoulder approximate right angle；Into isometrical technique, by controlling temperature of thermal field and crystal to lift speed, certain diameter specification is grown
The monocrystalline cylinder of size；When most of silicon solution is completed to crystallize, then crystal is gradually reduced and forms a tail shape cone, claimed
For tailing-in technique；Such a crystal-pulling process is just basically completed, and can is taken out after carrying out certain insulation cooling.
During above-mentioned monocrystalline growth with czochralski silicon, the polycrystalline silicon raw material of high-purity is put into crucible, it is usually used
Charging ladle, its detailed process are：High purity silicon raw material is transferred in charging ladle, and charging ladle, upper furnace chamber are sling by seed crystal rope
Vacuum is extracted after reset, then declines seed crystal to correct position discharging, after further take out charging ladle.During aforesaid operations due to
Need frequently to extract vacuum, its trivial operations, once some link, which goes wrong, will produce accident.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of monocrystalline silicon feeding device and its operating method, on the monocrystalline silicon
Because vacuum cause causes the accident when material device is solved the problems, such as due to preparing monocrystalline silicon, and the arrangement increases monocrystalline
Silicon preparation efficiency.
In order to solve the above-mentioned technical problem, a kind of monocrystalline silicon feeding device of the invention includes storage tank, storage tank lower end
Preheating chamber is connected by the first connecting tube, the first connecting tube is provided with the first magnetic valve, preheating chamber lower end connects by second
Adapter connection vacuum chamber, vacuum chamber is interior to be provided with baroceptor, and vacuum chamber side is provided with exhaust tube, exhaust tube connection pumping dress
Put, the second connecting tube is provided with second solenoid valve, vacuum chamber lower end connection feed pipe, and feed pipe is provided with the 3rd magnetic valve, stored up
Controller is provided with the outside of batch can, baroceptor, air extractor, the 3rd magnetic valve are respectively connected with controller.
The feed pipe both sides are provided with the fixing device for being used for fixing feed pipe, and fixing device is slidably connected with feed pipe.
The preheating chamber inwall, the second connection inside pipe wall, vacuum chamber interior walls, feeding inside pipe wall are equipped with heat-insulation layer.
The controller is single-chip microcomputer.
The preheating chamber is in ellipticity.
A kind of operating method of monocrystalline silicon feeding device, this method comprise the following steps：
Step 1, single crystal silicon materials are loaded in storage tank；
Step 2, opens the first magnetic valve, and single crystal silicon materials are entered in preheating chamber by the first connecting tube；
Step 3, single crystal silicon materials open second solenoid valve, the single crystal silicon materials after preheating lead to by being preheated in preheating chamber
The second connecting tube is crossed to enter in vacuum chamber；
Step 4, second solenoid valve is closed, the air pressure in baroceptor detection vacuum chamber in vacuum chamber, baroceptor will
The air pressure of detection is transmitted to controller, if the air pressure of detection is higher than the air pressure of vacuum standard in vacuum chamber, controller control is closed
3rd magnetic valve simultaneously starts air extractor simultaneously, until vacuum room pressure reaches vacuum standard, if the gas detected in vacuum chamber
The air pressure in vacuum standard is forced down, then the 3rd magnetic valve is opened in controller control；
Step 5, the single crystal silicon materials for reaching vacuum standard are entered in the crucible in monocrystaline silicon stove by feed pipe.
After the present invention is using said structure and method, there is advantages below：
1st, because preheating chamber lower end is by the second connecting tube connection vacuum chamber, vacuum chamber is interior to be provided with baroceptor, vacuum chamber
Side is provided with exhaust tube, exhaust tube connection air extractor, baroceptor, air extractor, the 3rd magnetic valve respectively with control
Device connects, and can so be entered with the vacuum in intelligentized control vacuum chamber, guarantee in monocrystalline silicon charging and production process
Vacuum is remained, avoids the generation of accident；
2nd, because storage tank lower end by the first connecting tube connects preheating chamber, the first connecting tube is provided with the first magnetic valve, pre-
Hot chamber lower end connects vacuum chamber by the second connecting tube, and such single crystal silicon materials are when vacuum chamber carries out application of vacuum, monocrystalline
Silicon raw material can just be preheated in advance in preheating chamber, improve the efficiency of monocrystalline silicon production；
3rd, because feed pipe both sides are provided with the fixing device for being used for fixing feed pipe, fixing device is slidably connected with feed pipe, this
Sample fixing device can control the position that feed pipe gos deep into monocrystaline silicon stove by sliding, and feed pipe is simultaneously fixed by fixing device
On monocrystaline silicon stove.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Fig. 1 is the structural representation of the present invention.
Wherein have：1. monocrystaline silicon stove；2. crucible；3. storage tank；4. the first connecting tube；5. the first magnetic valve；6.
Preheating chamber；7. the second connecting tube；8. second solenoid valve；9. vacuum chamber；10. baroceptor；11. exhaust tube；12.
Air extractor；13. feed pipe；14. the 3rd magnetic valve；15. fixing device；16. controller.
Embodiment
The application is related to following technical characteristic：Monocrystaline silicon stove 1；Crucible 2；Storage tank 3；First connecting tube 4；First magnetic valve
5；Preheating chamber 6；Second connecting tube 7；Second solenoid valve 8；Vacuum chamber 9；Baroceptor 10；Exhaust tube 11；Air extractor 12；
Feed pipe 13；3rd magnetic valve 14；Fixing device 15；Controller 16.
Shown in Fig. 1, a kind of monocrystalline silicon feeding device, including storage tank, storage tank lower end are connected pre- by the first connecting tube
Hot chamber, the first connecting tube is provided with the first magnetic valve, preheating chamber lower end connects vacuum chamber, vacuum chamber by the second connecting tube
Interior to be provided with baroceptor, vacuum chamber side is provided with exhaust tube, exhaust tube connection air extractor, and the second connecting tube is provided with second
Magnetic valve, vacuum chamber lower end connection feed pipe, feed pipe are provided with the 3rd magnetic valve, controller, air pressure are provided with the outside of storage tank
Sensor, air extractor, the 3rd magnetic valve are respectively connected with controller.
The feed pipe both sides are provided with the fixing device for being used for fixing feed pipe, and fixing device is slidably connected with feed pipe.
The preheating chamber inwall, the second connection inside pipe wall, vacuum chamber interior walls, feeding inside pipe wall are equipped with heat-insulation layer.
The controller is single-chip microcomputer.
The preheating chamber is in ellipticity.
A kind of operating method of monocrystalline silicon feeding device, this method comprise the following steps：
Step 1, single crystal silicon materials are loaded in storage tank；
Step 2, opens the first magnetic valve, and single crystal silicon materials are entered in preheating chamber by the first connecting tube；
Step 3, single crystal silicon materials open second solenoid valve, the single crystal silicon materials after preheating lead to by being preheated in preheating chamber
The second connecting tube is crossed to enter in vacuum chamber；
Step 4, second solenoid valve is closed, the air pressure in baroceptor detection vacuum chamber in vacuum chamber, baroceptor will
The air pressure of detection is transmitted to controller, if the air pressure of detection is higher than the air pressure of vacuum standard in vacuum chamber, controller control is closed
3rd magnetic valve simultaneously starts air extractor simultaneously, until vacuum room pressure reaches vacuum standard, if the gas detected in vacuum chamber
The air pressure in vacuum standard is forced down, then the 3rd magnetic valve is opened in controller control；
Step 5, the single crystal silicon materials for reaching vacuum standard are entered in the crucible in monocrystaline silicon stove by feed pipe.
Because preheating chamber lower end is by the second connecting tube connection vacuum chamber, vacuum chamber is interior to be provided with baroceptor, vacuum
Room side is provided with exhaust tube, exhaust tube connection air extractor, baroceptor, air extractor, the 3rd magnetic valve respectively with control
Device connection processed, so monocrystalline silicon charging and production process can be entered with the vacuum in intelligentized control vacuum chamber, guarantee
In remain vacuum, avoid the generation of accident.Because storage tank lower end by the first connecting tube connects preheating chamber, the
One connecting tube is provided with the first magnetic valve, preheating chamber lower end connects vacuum chamber, such single crystal silicon materials by the second connecting tube
When vacuum chamber carries out application of vacuum, single crystal silicon materials can just be preheated in advance in preheating chamber, improve monocrystalline silicon
The efficiency of production.Other fixing device can control the position that feed pipe gos deep into monocrystaline silicon stove by sliding, and feed pipe simultaneously leads to
Fixing device is crossed to be fixed on monocrystaline silicon stove.
The technical characteristic for not having to describe in detail in the application is prior art.Above-described embodiment only illustrative the application
Principle and its effect, not for limitation the application.Any person skilled in the art all can be in the essence without prejudice to the application
God and under the scope of, to above-described embodiment carry out modifications and changes.Therefore, those of ordinary skill in the art is not taking off
, should be by the right of the application from spirit disclosed herein and all equivalent modifications completed under technological thought or change
It is required that covered.
Claims (6)
- A kind of 1. monocrystalline silicon feeding device, it is characterised in that：Including storage tank, storage tank lower end is connected pre- by the first connecting tube Hot chamber, the first connecting tube is provided with the first magnetic valve, preheating chamber lower end connects vacuum chamber, vacuum chamber by the second connecting tube Interior to be provided with baroceptor, vacuum chamber side is provided with exhaust tube, exhaust tube connection air extractor, and the second connecting tube is provided with second Magnetic valve, vacuum chamber lower end connection feed pipe, feed pipe are provided with the 3rd magnetic valve, controller, air pressure are provided with the outside of storage tank Sensor, air extractor, the 3rd magnetic valve are respectively connected with controller.
- 2. according to the monocrystalline silicon feeding device described in claim 1, it is characterised in that：The feed pipe both sides, which are provided with, to be used to fix The fixing device of feed pipe, fixing device are slidably connected with feed pipe.
- 3. according to the monocrystalline silicon feeding device described in claim 1, it is characterised in that：The preheating chamber inwall, the second connection Inside pipe wall, vacuum chamber interior walls, feeding inside pipe wall are equipped with heat-insulation layer.
- 4. according to the monocrystalline silicon feeding device described in claim 1, it is characterised in that：The controller is single-chip microcomputer.
- 5. according to the monocrystalline silicon feeding device described in claim 1, it is characterised in that：The preheating chamber is in ellipticity.
- A kind of 6. operating method of monocrystalline silicon feeding device, it is characterised in that：This method comprises the following steps：Step 1, single crystal silicon materials are loaded in storage tank；Step 2, opens the first magnetic valve, and single crystal silicon materials are entered in preheating chamber by the first connecting tube；Step 3, single crystal silicon materials open second solenoid valve, the single crystal silicon materials after preheating lead to by being preheated in preheating chamber The second connecting tube is crossed to enter in vacuum chamber；Step 4, second solenoid valve is closed, the air pressure in baroceptor detection vacuum chamber in vacuum chamber, baroceptor will The air pressure of detection is transmitted to controller, if the air pressure of detection is higher than the air pressure of vacuum standard in vacuum chamber, controller control is closed 3rd magnetic valve simultaneously starts air extractor simultaneously, until vacuum room pressure reaches vacuum standard, if the gas detected in vacuum chamber The air pressure in vacuum standard is forced down, then the 3rd magnetic valve is opened in controller control；Step 5, the single crystal silicon materials for reaching vacuum standard are entered in the crucible in monocrystaline silicon stove by feed pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711075980.1A CN107794564A (en) | 2017-11-06 | 2017-11-06 | Monocrystalline silicon feeding device and its operating method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711075980.1A CN107794564A (en) | 2017-11-06 | 2017-11-06 | Monocrystalline silicon feeding device and its operating method |
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| CN107794564A true CN107794564A (en) | 2018-03-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114959875A (en) * | 2021-02-26 | 2022-08-30 | 晶科能源股份有限公司 | Feeding equipment for crystal growth device, crystal growth device and feeding process |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06100394A (en) * | 1992-09-17 | 1994-04-12 | Nkk Corp | Method for feeding raw material for producing single crystal and apparatus therefor |
| RU2343234C1 (en) * | 2007-10-16 | 2009-01-10 | Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" | Technique of furnace feed additional charging during process of silicon single crystal growing by czochralski method |
| CN102242395A (en) * | 2011-06-17 | 2011-11-16 | 常州天合光能有限公司 | Continuous feeding device for growth of silicon single crystal and single crystal furnace equipped with same |
| CN202297856U (en) * | 2011-09-19 | 2012-07-04 | 浙江思博恩新材料科技有限公司 | Single crystal furnace and charging device thereof |
| CN202530195U (en) * | 2012-03-13 | 2012-11-14 | 杭州奔博科技有限公司 | Feeding device for single crystal furnace |
| CN104695009A (en) * | 2015-03-30 | 2015-06-10 | 江苏盎华光伏工程技术研究中心有限公司 | Single crystal furnace for achieving online electrical resistivity debugging and control method thereof |
| JP2017014073A (en) * | 2015-07-02 | 2017-01-19 | 株式会社Sumco | Device and method for supplying silicon melt, and manufacturing apparatus of silicon single crystal |
| CN207567377U (en) * | 2017-11-06 | 2018-07-03 | 无锡乐东微电子有限公司 | monocrystalline silicon feeding device |
-
2017
- 2017-11-06 CN CN201711075980.1A patent/CN107794564A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06100394A (en) * | 1992-09-17 | 1994-04-12 | Nkk Corp | Method for feeding raw material for producing single crystal and apparatus therefor |
| RU2343234C1 (en) * | 2007-10-16 | 2009-01-10 | Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" | Technique of furnace feed additional charging during process of silicon single crystal growing by czochralski method |
| CN102242395A (en) * | 2011-06-17 | 2011-11-16 | 常州天合光能有限公司 | Continuous feeding device for growth of silicon single crystal and single crystal furnace equipped with same |
| CN202297856U (en) * | 2011-09-19 | 2012-07-04 | 浙江思博恩新材料科技有限公司 | Single crystal furnace and charging device thereof |
| CN202530195U (en) * | 2012-03-13 | 2012-11-14 | 杭州奔博科技有限公司 | Feeding device for single crystal furnace |
| CN104695009A (en) * | 2015-03-30 | 2015-06-10 | 江苏盎华光伏工程技术研究中心有限公司 | Single crystal furnace for achieving online electrical resistivity debugging and control method thereof |
| JP2017014073A (en) * | 2015-07-02 | 2017-01-19 | 株式会社Sumco | Device and method for supplying silicon melt, and manufacturing apparatus of silicon single crystal |
| CN207567377U (en) * | 2017-11-06 | 2018-07-03 | 无锡乐东微电子有限公司 | monocrystalline silicon feeding device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114959875A (en) * | 2021-02-26 | 2022-08-30 | 晶科能源股份有限公司 | Feeding equipment for crystal growth device, crystal growth device and feeding process |
| CN114959875B (en) * | 2021-02-26 | 2023-06-06 | 晶科能源股份有限公司 | Charging equipment for crystal growth device, crystal growth device and charging process |
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