CN202297856U - Single crystal furnace and charging device thereof - Google Patents
Single crystal furnace and charging device thereof Download PDFInfo
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- CN202297856U CN202297856U CN2011203516199U CN201120351619U CN202297856U CN 202297856 U CN202297856 U CN 202297856U CN 2011203516199 U CN2011203516199 U CN 2011203516199U CN 201120351619 U CN201120351619 U CN 201120351619U CN 202297856 U CN202297856 U CN 202297856U
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Abstract
The embodiment of the utility model discloses a single crystal furnace and a charging device thereof. The single crystal furnace comprises a charging device and a double-layer crucible, wherein the charging device comprises a storage tank, an upper gate valve, a material-guiding structure and a conveying pipe, wherein a discharging outlet is arranged at the bottom of the storage tank; the upper gate valve is connected with the discharging outlet; one side of the material-guiding structure is connected with the upper gate valve; the conveying pipe is connected with the other side of the material-guiding structure; the material-guiding structure comprises a connecting pipeline, a turbine screw rod and a servo motor; the connecting pipeline is used for communicating the upper gate valve with the conveying pipe; the turbine screw rod passes through the connecting pipeline; and a rotor of the servo motor is connected with the turbine screw rod. The continuous crystal pulling is practically realized by using the single crystal furnace and the charging device thereof disclosed by the utility model, so that the crystal pulling period is shortened, the production efficiency is increased, the production cost is lowered and the maximization of capacity is achieved.
Description
Technical field
The utility model relates to silicon single crystal manufacturing technology field, relates in particular to a kind of single crystal growing furnace and feeding device thereof.
Background technology
Crystal growth is to convert the polysilicon block of semiconductor grade silicon to a big silicon single crystal, and the silicon single crystal after the growth is called as silicon ingot.Producing the most general technology of silicon single crystal ingot that is used for the silicon chip preparation now is the CZ method.CZ method growing single-crystal silicon is to become the semiconductor grade silicon liquid that has melted correct crystal orientation is arranged and to be doped to the n type or the solid silicon ingot of p type.
For growing silicon ingot, many block semiconductor level silicon be placed in be equipped with solution silica crucible in, contain a spot of imparity and make it grow into n type or p type silicon.Crucible is very big, prepare the silicon chip of 300mm, and its diameter will reach 32 inches or bigger, and these crucibles must be able to load 150 to 300kg silicon.The another kind of optional method of preparation large-diameter silicon wafer makes and in crucible, uses the granulous polysilicon, and he can progressively introduce silicon in the process of silicon fusing be that stress reduces to minimum in big crucible.
Though in the photovoltaic industry, monocrystalline silicon battery sheet efficiency of conversion is superior to polysilicon, the production efficiency of silicon single crystal is low, and manufacturing cost is high.Therefore, improve the production efficiency of silicon single crystal, reduce its production cost, need new technological breakthrough and innovation and creation.
The utility model content
In view of this, the utility model provides a kind of feeding device, and this feeding device is installed on the body of heater through permanent seat; Can be in the process of body of heater growing crystal, on one side crystal pulling add the grain silicon material on one side, thereby realize continuous production; Shorten the crystal pulling cycle, and then improve the production efficiency of silicon single crystal.
For addressing the above problem, the utility model provides following technical scheme:
The utility model discloses a kind of feeding device, this device comprises:
Storage tank, this storage tank bottom has a discharge port;
The brake application plate valve that links to each other with said discharge port;
The guide structure that one side links to each other with said brake application plate valve;
The carrier pipe that links to each other with said guide structure opposite side;
Wherein, said guide structure comprises:
The connecting pipeline that is communicated with said brake application plate valve and said carrier pipe;
The turbine screw rod that runs through said connecting pipeline;
Servomotor, the rotor of this servomotor links to each other with said turbine screw rod.
Preferably, said storage tank top has charging opening.
Preferably, this device also comprises argon gas pipe interface and vacuum-lines interface.
Preferably, this device comprises that also a side links to each other with said connecting pipeline, the lower flashboard valve that opposite side links to each other with said carrier pipe.
Preferably, the bottom of this device is provided with permanent seat.
The invention also discloses a kind of single crystal growing furnace, this device comprises:
Body of heater;
Utilize said permanent seat to be fixed on the feeding device on the said body of heater;
Double crucible, the interlayer of this double crucible is relative with the outlet of said carrier pipe.
Preferably, said double crucible comprises:
Crucible internal layer, crucible skin and crucible bottom are communicated with the through hole of crucible ectonexine.
Preferably, said device also comprises
Be positioned at the well heater in the said double crucible outside;
The seed crystal that in said body of heater, is positioned at above the said double crucible promotes structure;
The crucible lift mechanism that links to each other with said double crucible bottom;
Wherein, said seed crystal promotes structure and comprises: seed crystal, the seed crystal rope that a side links to each other with said seed crystal and with said seed crystal restrict that opposite side links to each other weighing instrument.
Preferably, this device also comprises:
Timing unit is used for reading at regular intervals the reading on the weighing instrument No. one time;
Computing unit is used to calculate the amplification of the numerical value that said timing unit read in two adjacent times, and the amplification that will calculate gained feeds back to servomotor.
Preferably, this device also comprise with double crucible in the liquid level range unit that links to each other of solution surface.
Compared with prior art; The technical scheme that the utility model provided is to have increased feeding device on the body of heater of growing single-crystal silicon in the prior art; Comprise: storage tank, brake application plate valve, guide structure, carrier pipe; Wherein, said guide structure comprises: connecting pipeline, turbine screw rod and servomotor.The grain silicon material is housed in the said storage tank, and when the said brake application plate valve that links to each other with said storage tank bottom was opened, the grain silicon material was under the effect of gravity; Discharge port through said storage tank bottom gets into the connecting pipeline in the said guide structure, and in said connecting pipeline got into the groove of the turbine screw rod in the said guide structure, said turbine screw rod was owing to link to each other with the rotor of said servomotor then; Rotation under the drive of said servomotor, and the grain silicon material in the said turbine screw flutes will rotate under the drive of said turbine screw rod, gets into said connecting pipeline again; Be transported to said carrier pipe along said connecting pipeline then, by said carrier pipe the grain silicon material sent in the body of heater at last, accomplish reinforced process; So just can be in the process of body of heater growing crystal; Crystal pulling on one side adds the grain silicon material on one side, thereby realizes continuous production, shortens the crystal pulling cycle; And then the production efficiency of raising silicon single crystal, reduce production costs.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiment of the utility model, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the feeding device structural representation that the utility model provided;
Fig. 2 is the feeding device part-structure enlarged diagram that the utility model provided;
Fig. 3 is the single crystal growing furnace structural representation that the utility model provided.
Embodiment
For the utility model is achieved the above object; Feature and advantage can be more remarkable; To combine the accompanying drawing in the utility model below, the technical scheme among the utility model embodiment carried out clear, intactly description, obviously; Described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
A lot of details have been set forth in the following description so that make much of the utility model; But the utility model can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of the utility model intension, so the utility model does not receive the restriction of following disclosed specific embodiment.
Secondly, the utility model combines synoptic diagram to be described in detail, when the utility model embodiment is detailed; For ease of explanation; The sectional view of expression device architecture can be disobeyed general ratio and done local the amplification, and said synoptic diagram is example, and it should not limit the scope of the utility model protection at this.The three-dimensional space size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Said as the background technology part, the production efficiency of silicon single crystal is lower in the prior art, and production cost is high, and this is that the drawing cycle is long because silicon single crystal single crystal growing furnace of the prior art whenever adds a silicon material and can only draw a crystal, and production efficiency is low.
In view of this, the utility model discloses a kind of feeding device, this bottom of device is provided with permanent seat, is installed on the body of heater through permanent seat, comprising:
Storage tank, this storage tank bottom has a discharge port;
The brake application plate valve that links to each other with said discharge port;
The guide structure that one side links to each other with said brake application plate valve;
The carrier pipe that links to each other with said guide structure opposite side;
Wherein, said guide structure comprises:
The connecting pipeline that is communicated with said brake application plate valve and said carrier pipe;
The turbine screw rod that runs through said connecting pipeline;
Servomotor, the rotor of this servomotor links to each other with said turbine screw rod.
To combine accompanying drawing that this feeding device is carried out detailed description below.
With reference to figure 1, Fig. 1 is a feeding device structural representation disclosed in the utility model, and charging opening 1, storage tank 2, brake application plate valve 3, turbine screw rod 4, servomotor 5, lower flashboard valve 6, carrier pipe 7, permanent seat 8, connecting pipeline 9 have been shown among the figure.
In the disclosed feeding device of the utility model embodiment, in the said storage tank 2 the grain silicon material is housed, when the said brake application plate valve 3 that links to each other with said storage tank 2 bottoms is opened; The grain silicon material is under the effect of gravity; Discharge port through said storage tank 2 bottoms gets into the connecting pipeline 9 in the said guide structure, gets in the groove of said turbine screw rod 4 along said connecting pipeline 9 then, and said turbine screw rod 4 is owing to link to each other with the rotor of said servomotor 5; Rotation under the drive of said servomotor 5; Thereby make the grain silicon material in said turbine screw rod 4 grooves also will under the drive of said turbine screw rod 4, rotate, get into said connecting pipeline 9 again, be transported to said carrier pipe 7 along said connecting pipeline 9 then; By said carrier pipe 7 the grain silicon material is sent in the body of heater at last, accomplished reinforced process.
Need to prove that slide valve can also isolated material and vacuum and atmosphere except the switch of control discharge port up and down.In addition; Disclosed feeding device also comprises argon gas pipe interface and vacuum-lines interface among the utility model embodiment; With reference to figure 2, Fig. 2 is a feeding device part-structure enlarged diagram disclosed in the utility model, and vacuum interface 21 and argon gas interface 22 have been shown among the figure.When reinforced; Vacuumize through 21 pairs of storage tanks 2 of said vacuum interface, and, in storage tank 2 and connecting pipeline 9, charge into argon gas through said argon gas interface 22; Thereby guaranteeing reinforced is under the protection of vacuum or argon gas, to carry out, and avoids the phenomenon of grain silicon material generation oxidation.
Need to prove that also in order to control feeding quantity more accurately, said feeding device also is provided with a side and links to each other with said connecting pipeline 9, the lower flashboard valve 6 that opposite side links to each other with said carrier pipe 7.And said reserves tank top is provided with charging opening 1, can be subsequent use, displacement; Thereby when reinforced, can realize continuing to feed in raw material, also can take to close plate valve up and down through displacement storage tank 2; Add the grain silicon material from the charging opening 1 of said storage tank 2, realize continuing reinforced.
The invention also discloses a kind of single crystal growing furnace, comprising:
Body of heater;
Utilize said permanent seat to be fixed on the feeding device on the said body of heater;
Double crucible, the interlayer of this double crucible and the outlet of said carrier pipe are relatively.
Wherein, said double crucible comprises: crucible internal layer, crucible skin and crucible bottom are communicated with the through hole of crucible ectonexine.
In addition, single crystal growing furnace disclosed in the utility model also comprises:
Be positioned at the well heater in the said double crucible outside;
The seed crystal that in said body of heater, is positioned at above the said double crucible promotes structure;
The crucible lift mechanism that links to each other with said double crucible bottom;
Wherein, said seed crystal promotes structure and comprises: seed crystal, the seed crystal rope that a side links to each other with said seed crystal and the weighing instrument that is positioned at said seed crystal rope opposite side.
To combine accompanying drawing that this single crystal growing furnace is carried out detailed description below.
With reference to figure 3, Fig. 3 is a disclosed single crystal growing furnace structural representation among the utility model embodiment.Feeding device 31, seed crystal 32, double crucible 33, reinforced melting area 34, crystal growth district 35, crucible lift mechanism 36, seed crystal rope 37 have been shown among the figure.
The disclosed single crystal growing furnace of the utility model embodiment can add the grain silicon material in said storage tank 2, open said brake application plate valve 3 then; The silicon material gravity effect under along said connecting pipeline 9, get in the groove of said turbine screw rod 4, and under the drive of said turbine screw rod 4 rotation; Again get into said connecting pipeline 9, flow to carrier pipe 7 then, and be transported to the interlayer of said double crucible 33 along said carrier pipe 7; Promptly reinforced melting area 34, because the skin of said double crucible 33 is near well heater, temperature is higher; The grain silicon material melts in the interlayer of said double crucible 33, becomes silicon solution, and silicon solution is through being positioned at the through hole of said double crucible 33 bottoms; Flow into the internal layer of said double crucible 33, i.e. crystal growth district 35, its central zone has radial temperature and longitudinal temperature; Be the critical warm area of silicon material solid-liquid phase, be lower than said double crucible 33 outer field temperature.After silicon solution gets into crystal growth district 35, under the drive of seed crystal lifting structure, begin crystal pulling.
In the crystal pulling process; Said double crucible 33 is always around said well heater rotation; Therefore; Said double crucible 33 is while rotating at said double crucible 33 outer evenly input grain silicon material, and meanwhile, the silicon solution in the said crystal growth district 35 is growing crystal under the drive of said seed crystal lifting structure.Because said seed crystal 37 1 sides of restricting link to each other with said seed crystal, opposite side links to each other with said weighing instrument, and therefore, said weighing instrument can be through measuring the said seed crystal charge capacity on 37 of restricting, obtain seed crystal and the weight in the stretching crystal that goes out.
Need to prove that single crystal growing furnace disclosed in the utility model also comprises:
Timing unit is used for reading at regular intervals the reading on the weighing instrument No. one time;
Computing unit is used to calculate the amplification of the numerical value that said timing unit read in two adjacent times, and the amplification that will calculate gained feeds back to servomotor 5.
Said timing unit reads once the numerical value on the said weighing instrument at regular intervals, and gives computing unit with the numerical value that is obtained, and said computing unit is through calculating the amplification of reading on adjacent two pitch times of the interior weighing instrument; Obtain crystalline cumulative weight in the unit time; Then the cumulative weight of gained in the unit time fed back to said servomotor 5, said servomotor 5 is according to the speed of feedback signal adjusting oneself, at the uniform velocity rotation; And drive said turbine screw rod 4 and at the uniform velocity rotate; Simultaneously, the grain silicon material in said turbine screw rod 4 grooves gets into connecting pipeline 9 then again along with said turbine screw rod 4 slowly rotates; And, get into the interlayer of said double crucible 33 through the defeated material mouth of said carrier pipe 7 belows along the said carrier pipe 7 of said connecting pipeline 9 entering.
Need to prove; Grain silicon material as reinforced is the particulate material of diameter 8-10mm, according to the length and the width of said turbine screw rod 4 grooves, can obtain whenever the rotate a circle number of the grain silicon material carried of said turbine screw rod 4; The rotating speed that combines said turbine screw rod again; Can obtain the grain silicon material sum that said turbine screw rod 4 is carried in the unit time, utilize electronic scale to weigh then, obtain the weight of the grain silicon material that said turbine screw rod 4 is carried in the unit time.Because the rotor of said servomotor 5 links to each other with said turbine screw rod 4, therefore said turbine screw rod 4 has same speed with said servomotor 5, and the weight of weighing instrument metering is the solid-state of silicon material; The grain silicon material also is solid-state, the feedback signal that is obtained according to said servomotor 5, and the weight of the grain silicon material that combines to be carried in said 4 unit time of turbine screw rod; Can form said double crucible 33 internal layers and draw out how many single crystal through regulating the speed of servomotor 5, the interlayer of said double crucible 33 is just imported the closed cycle of how many grain silicon material; Crystal growth finishes up behind certain-length, and closing up and down, slide valve stops to feed in raw material; The crystal that is drawn into is taken out, and Heating temperature is opened slide valve up and down then; Restart crystal pulling; So circulation realizes continuing crystal pulling, reaches life up to said double crucible 33.
In the crystal pulling process; Because said double crucible 33 bottoms communicate, the liquid level basically identical of said double crucible 33 skins and said double crucible 33 internal layers, and through being positioned at the said crucible lift mechanism 36 of said double crucible 33 bottoms; Keep the level attitude of silicon solution; When reaching crystal growth, guarantee that the silicon solution level position in the crucible can keep constant basically, thereby make that temperature control and thermograde variable quantity in the said double crucible 33 are less through at the uniform velocity feeding in raw material; The assurance environment of crystal growth is more stable, improves the crystal growth yield rate.
And disclosed single crystal growing furnace also comprises the liquid level range unit that links to each other with double crucible 33 interior solution surface among the utility model embodiment; Through measuring the position of silicon solution surface; Revise the speed of said servomotor 5; Thereby regulate the operational throughput of grain silicon material, and then more accurately guarantee at the uniform velocity defeated material.
Disclosed single crystal growing furnace among the utility model embodiment has truly been realized lasting crystal pulling, thereby has shortened the crystal pulling cycle, has improved production efficiency, and then has reduced production cost, has reached the production capacity maximization.And because in the process of crystal pulling; Impurity in the silicon material generally is deposited in the bottom of solution; And crystal makes the impurity level in the crystal lack than the crystal that once is drawn into through continuous crystal-pulling, thereby has improved the quality of product in solution top and the growth of solution upper surface.
Various piece adopts the mode of going forward one by one to describe in this specification sheets, and what each part stressed all is and the difference of other parts that identical similar part is mutually referring to getting final product between the various piece.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the utility model.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation of spirit that does not break away from the utility model or scope in other embodiments among this paper.Therefore, the utility model will can not be restricted to embodiment illustrated herein, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (10)
1. a feeding device is characterized in that, this device comprises:
Storage tank, this storage tank bottom has a discharge port;
The brake application plate valve that links to each other with said discharge port;
The guide structure that one side links to each other with said brake application plate valve;
The carrier pipe that links to each other with said guide structure opposite side;
Wherein, said guide structure comprises:
The connecting pipeline that is communicated with said brake application plate valve and said carrier pipe;
The turbine screw rod that runs through said connecting pipeline;
Servomotor, the rotor of this servomotor links to each other with said turbine screw rod.
2. feeding device according to claim 1 is characterized in that, said storage tank top has charging opening.
3. feeding device according to claim 1 is characterized in that, this device also comprises argon gas pipe interface and vacuum-lines interface.
4. feeding device according to claim 1 is characterized in that, this device comprises that also a side links to each other with said connecting pipeline, the lower flashboard valve that opposite side links to each other with said carrier pipe.
5. feeding device according to claim 1 is characterized in that the bottom of this device is provided with permanent seat.
6. a single crystal growing furnace is characterized in that, this device comprises:
Body of heater;
Like each described feeding device of claim 1-5, said feeding device utilizes permanent seat to be fixed on the said body of heater;
Double crucible, the interlayer of this double crucible is relative with the outlet of said carrier pipe.
7. single crystal growing furnace according to claim 6 is characterized in that, said double crucible comprises:
Crucible internal layer, crucible skin and crucible bottom are communicated with the through hole of crucible ectonexine.
8. single crystal growing furnace according to claim 6 is characterized in that said device also comprises
Be positioned at the well heater in the said double crucible outside;
The seed crystal that in said body of heater, is positioned at above the said double crucible promotes structure;
The crucible lift mechanism that links to each other with said double crucible bottom;
Wherein, said seed crystal promotes structure and comprises: seed crystal, the seed crystal rope that a side links to each other with said seed crystal and the weighing instrument that links to each other with said seed crystal rope opposite side.
9. single crystal growing furnace according to claim 7 is characterized in that, this device also comprises:
Timing unit is used for reading at regular intervals the reading on the weighing instrument No. one time;
Computing unit is used to calculate the amplification of the numerical value that said timing unit read in two adjacent times, and the amplification that will calculate gained feeds back to servomotor.
10. single crystal growing furnace according to claim 9 is characterized in that, this device also comprise with double crucible in the liquid level range unit that links to each other of solution surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203516199U CN202297856U (en) | 2011-09-19 | 2011-09-19 | Single crystal furnace and charging device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203516199U CN202297856U (en) | 2011-09-19 | 2011-09-19 | Single crystal furnace and charging device thereof |
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| Publication Number | Publication Date |
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| CN202297856U true CN202297856U (en) | 2012-07-04 |
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| CN2011203516199U Expired - Lifetime CN202297856U (en) | 2011-09-19 | 2011-09-19 | Single crystal furnace and charging device thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103882516A (en) * | 2014-03-25 | 2014-06-25 | 山西中电科新能源技术有限公司 | Online replenishing method for polycrystalline silicon ingot furnace |
| CN104235401A (en) * | 2013-06-18 | 2014-12-24 | 洛阳志振冷食机器厂 | Multi-work-position double-moving plate valve |
| CN104264229A (en) * | 2014-10-09 | 2015-01-07 | 河北晶龙阳光设备有限公司 | Online doping device for single crystal furnace |
| CN105063747A (en) * | 2015-07-21 | 2015-11-18 | 李剑 | Liquid continuous feeding polysilicon casting equipment and production method thereof |
| CN107313111A (en) * | 2017-07-11 | 2017-11-03 | 江苏星特亮科技有限公司 | A kind of multistation feeding device |
| CN107794564A (en) * | 2017-11-06 | 2018-03-13 | 无锡乐东微电子有限公司 | Monocrystalline silicon feeding device and its operating method |
| CN108660505A (en) * | 2017-03-27 | 2018-10-16 | 江苏恒合科技有限公司 | A kind of charging, material, separation impurity, the long brilliant synchronous crystal growing furnace for carrying out continuous crystal-pulling |
| CN109470059A (en) * | 2018-11-16 | 2019-03-15 | 成都斯力康科技股份有限公司 | A kind of vacuum melting charging process |
| WO2020253032A1 (en) * | 2019-06-17 | 2020-12-24 | 宁夏隆基硅材料有限公司 | Crystal pulling method and single crystal furnace |
| CN116180212A (en) * | 2023-04-27 | 2023-05-30 | 北京大学 | Crystal pulling device capable of automatically feeding at high temperature and application method thereof |
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2011
- 2011-09-19 CN CN2011203516199U patent/CN202297856U/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104235401A (en) * | 2013-06-18 | 2014-12-24 | 洛阳志振冷食机器厂 | Multi-work-position double-moving plate valve |
| CN103882516B (en) * | 2014-03-25 | 2016-05-11 | 山西中电科新能源技术有限公司 | The online feed supplement method of polycrystalline silicon ingot or purifying furnace |
| CN103882516A (en) * | 2014-03-25 | 2014-06-25 | 山西中电科新能源技术有限公司 | Online replenishing method for polycrystalline silicon ingot furnace |
| CN104264229A (en) * | 2014-10-09 | 2015-01-07 | 河北晶龙阳光设备有限公司 | Online doping device for single crystal furnace |
| CN105063747A (en) * | 2015-07-21 | 2015-11-18 | 李剑 | Liquid continuous feeding polysilicon casting equipment and production method thereof |
| CN108660505A (en) * | 2017-03-27 | 2018-10-16 | 江苏恒合科技有限公司 | A kind of charging, material, separation impurity, the long brilliant synchronous crystal growing furnace for carrying out continuous crystal-pulling |
| CN107313111A (en) * | 2017-07-11 | 2017-11-03 | 江苏星特亮科技有限公司 | A kind of multistation feeding device |
| CN107794564A (en) * | 2017-11-06 | 2018-03-13 | 无锡乐东微电子有限公司 | Monocrystalline silicon feeding device and its operating method |
| CN109470059A (en) * | 2018-11-16 | 2019-03-15 | 成都斯力康科技股份有限公司 | A kind of vacuum melting charging process |
| CN109470059B (en) * | 2018-11-16 | 2019-11-05 | 成都斯力康科技股份有限公司 | A kind of vacuum melting charging process |
| WO2020253032A1 (en) * | 2019-06-17 | 2020-12-24 | 宁夏隆基硅材料有限公司 | Crystal pulling method and single crystal furnace |
| CN116180212A (en) * | 2023-04-27 | 2023-05-30 | 北京大学 | Crystal pulling device capable of automatically feeding at high temperature and application method thereof |
| CN116180212B (en) * | 2023-04-27 | 2023-08-11 | 北京大学 | Crystal pulling device capable of automatically feeding at high temperature and application method thereof |
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Owner name: YUHUI YANGGUANG ENERGY RESOURCES CO., LTD., ZHEJIA Free format text: FORMER OWNER: RENESOLA ENERGY SAVING TECHNOLOGY CO., LTD. Effective date: 20130226 |
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Owner name: RENESOLA ENERGY SAVING TECHNOLOGY CO., LTD. Free format text: FORMER NAME: NEW MATERIAL TECHNOLOGY CO., LTD. ZHEJIANG SI BOEN |
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Address after: Jiaxing City, Zhejiang province 314117 Jiashan County Yaozhuang Manhattan Road No. 158 building three layer 1 Patentee after: Zhejiang Yuhui Energy Saving Technology Co.,Ltd. Address before: Jiaxing City, Zhejiang province 314117 Jiashan County Yaozhuang Manhattan Road No. 158 building three layer 1 Patentee before: Zhejiang Sibosi New Material Technology Co.,Ltd. |
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Effective date of registration: 20130226 Address after: 314117 Yao Town Industrial Park, Jiaxing, Zhejiang, Jiashan Patentee after: RENESOLA ZHEJIANG Ltd. Address before: Jiaxing City, Zhejiang province 314117 Jiashan County Yaozhuang Manhattan Road No. 158 building three layer 1 Patentee before: Zhejiang Yuhui Energy Saving Technology Co.,Ltd. |
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Granted publication date: 20120704 |
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| CX01 | Expiry of patent term |