CN102677147B - Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method - Google Patents
Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method Download PDFInfo
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- CN102677147B CN102677147B CN201210198020.5A CN201210198020A CN102677147B CN 102677147 B CN102677147 B CN 102677147B CN 201210198020 A CN201210198020 A CN 201210198020A CN 102677147 B CN102677147 B CN 102677147B
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Abstract
The invention discloses an ingot furnace suitable for producing a monocrystalline silicon ingot with an ingot casting method. The ingot furnace comprises a furnace body and a silicon melting furnace in the furnace body, wherein a rotating screw rod positioned above the furnace body extends into the silicon melting furnace; a seed crystal is arranged at the bottom of the rotating screw rod; and the rotating screw rod is provided with a distance sensor for sensing the distance from the bottom of the rotating screw rod to the liquid level of molten silicon in the silicon melting furnace. The ingot furnace disclosed by the invention has the advantages that monocrystalline silicon ingots and monocrystalline silicon type ingots can be produced in the ingot furnace by only one seed crystal without paving the seed crystals at the bottom of the ingot furnace, manufactured products are mainly monocrystalline silicon ingots, only the edges of the manufactured products are monocrystalline silicon type ingots, thus the conversion efficiency of battery sheets manufactured by the monocrystalline silicon ingot is higher, and the composite cost of the monocrystalline silicon ingot is lower than the cost of a monocrystalline silicon ingot manufactured with a straightening method and the cost of a polycrystalline silicon ingot manufactured with an ingot casting method.
Description
Technical field
The present invention relates to a kind of ingot furnace, particularly a kind of ingot furnace be applicable to by casting ingot method produce single crystal silicon ingot.
Background technology
At photovoltaic industry, the silicon materials that solar battery sheet uses have three kinds: monocrystalline silicon piece, polysilicon chip, class monocrystalline silicon piece.
The cell piece efficiency of conversion that monocrystalline silicon piece is made is the highest, but due to monocrystalline silicon piece be that and the making of silicon single crystal ingot needs to pass through vertical pulling method by silicon single crystal ingot by the product after cutting, brilliant by the son rotated, slowly promote, from single crystal growing furnace, grow bar-shaped silicon single crystal, cost is higher.
The cell piece efficiency of conversion that polysilicon chip is made is minimum, but because polysilicon is by producing in ingot furnace, production cost is well below silicon single crystal.
The cell piece efficiency of conversion that class monocrystalline silicon piece makes and cost are above therebetween, the mode of producing is by laying one deck monocrystalline in the bottom of ingot furnace, namely young brilliant, by the control of thermal field, produce class monocrystalline silicon piece according to the mode of ingot casting, need to consume a large amount of sons brilliant.
Summary of the invention
Goal of the invention: for the problems referred to above, the object of this invention is to provide a kind of ingot furnace be applicable to by casting ingot method produce single crystal silicon ingot, produces silicon single crystal ingot and class silicon single crystal ingot in ingot furnace, reduces production cost.
Technical scheme: a kind of ingot furnace be applicable to by casting ingot method produce single crystal silicon ingot, comprise the silicon fusion boiler in body of heater, described body of heater, arranging rotary screw above described body of heater stretches in described silicon fusion boiler, install young brilliant bottom described rotary screw, described rotary screw arranges distance sensing devices, to the distance of molten silicon liquid level in described silicon fusion boiler bottom rotary screw described in sensing.
Described rotary screw bottom is stretching structure, when molten silicon liquid level is more shallow in silicon fusion boiler, opens stretching structure and contacts with molten silicon to meet bottom rotary screw, proceed the production of silicon single crystal ingot.
Described rotary screw upper end is installed argon gas drainage hood and is connected with described body of heater.
Adjustable temperature heater is provided with above the inherent described silicon fusion boiler of described body of heater.
Described body of heater wall is provided with viewing window.
Beneficial effect: compared with prior art, advantage of the present invention is in ingot furnace, produce silicon single crystal ingot and class silicon single crystal ingot, only need one piece of young crystalline substance, young brilliant without the need to laying bottom ingot furnace, obtained product is mainly silicon single crystal ingot, only have edge to be class silicon single crystal ingot, the efficiency of conversion being made into cell piece is higher, and comprehensive cost is lower than the silicon single crystal ingot made by vertical pulling method and the polycrystal silicon ingot produced by the mode of ingot casting.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
As shown in Figure 1, a kind of ingot furnace be applicable to by casting ingot method produce single crystal silicon ingot, comprises body of heater 1, silicon fusion boiler 2, and silicon fusion boiler 2 is placed in body of heater 1, also comprise rotary screw 3, distance sensing devices 4, argon gas drainage hood 6, adjustable temperature heater 7, adjustable temperature heater 7 to be arranged in body of heater 1 above silicon fusion boiler 2, rotary screw 3 to be arranged at above body of heater 1 and to stretch in silicon fusion boiler 2, rotary screw 3 bottom is stretching structure 5, stretching structure 5 is telescopic shaft, the length of rotary screw 3 can be made when telescopic shaft is opened, young brilliant 9 are installed bottom rotary screw 3, rotary screw 3 is arranged distance sensing devices 4, to the distance of molten silicon 10 liquid level in silicon fusion boiler 2 bottom sensing rotary screw 3, argon gas drainage hood 6 is arranged on rotary screw 3 upper end and is connected with body of heater 1, argon gas is entered in body of heater 1 by argon gas drainage hood 6.Body of heater 1 wall is provided with viewing window 8.
When using ingot furnace of the present invention to produce, control rotary screw 3 by distance sensing devices 4 and extend into position in silicon fusion boiler 2, make the son's crystalline substance 9 bottom rotary screw 3 reach molten silicon 10 ullage in silicon fusion boiler 2; In early stage and the mid-term of production process, rotary screw 3 keeps rotating, and the son's crystalline substance 9 bottom rotary screw 3 extend into molten silicon 10 inside, and in the later stage of producing, rotary screw 3 promotes, and leaves molten silicon 10 liquid level, Nature creating silicon single crystal ingot bottom rotary screw 3.In process of production, calculated the height of molten silicon liquid level by distance sensing devices, guarantee that the son's crystalline substance bottom rotary screw keeps desired location, adjustable temperature heater regulates in-furnace temperature according to practical situation.
Claims (2)
1. one kind is applicable to the ingot furnace by casting ingot method produce single crystal silicon ingot, comprise body of heater (1), silicon fusion boiler (2) in described body of heater (1), it is characterized in that: described body of heater (1) top arranges rotary screw (3) and stretches in described silicon fusion boiler (2), described rotary screw (3) bottom is installed young brilliant, described rotary screw (3) bottom is stretching structure (5), stretching structure (5) is telescopic shaft, telescopic shaft opens the length making rotary screw (3), described rotary screw (3) is arranged distance sensing devices (4), rotary screw described in sensing (3) bottom is to the distance of the interior molten silicon liquid level of described silicon fusion boiler (2), described rotary screw (3) upper end is installed argon gas drainage hood (6) and is connected with described body of heater (1), described silicon fusion boiler (2) top is provided with adjustable temperature heater (7).
2. a kind of being applicable to according to claim 1, by the ingot furnace of casting ingot method produce single crystal silicon ingot, is characterized in that: described body of heater (1) wall is provided with viewing window (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210198020.5A CN102677147B (en) | 2012-06-15 | 2012-06-15 | Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210198020.5A CN102677147B (en) | 2012-06-15 | 2012-06-15 | Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method |
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| Publication Number | Publication Date |
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| CN102677147A CN102677147A (en) | 2012-09-19 |
| CN102677147B true CN102677147B (en) | 2015-03-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210198020.5A Active CN102677147B (en) | 2012-06-15 | 2012-06-15 | Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103160918B (en) * | 2013-02-26 | 2016-06-22 | 宏大中源太阳能股份有限公司 | Quasi-monocrystalline silicon prepare stove and preparation method |
| KR101554394B1 (en) * | 2013-12-19 | 2015-09-18 | 주식회사 엘지실트론 | View port for observing ingot growing process and ingot growing apparatus having the same |
| CN112680785B (en) * | 2020-11-30 | 2022-11-04 | 晶科能源股份有限公司 | Novel single crystal furnace |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1553214A2 (en) * | 2002-02-20 | 2005-07-13 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| CN101851782A (en) * | 2010-05-19 | 2010-10-06 | 绍兴县精功机电研究所有限公司 | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace |
| CN102321909A (en) * | 2011-09-30 | 2012-01-18 | 安阳市凤凰光伏科技有限公司 | The method of casting production single crystal-like silicon |
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2012
- 2012-06-15 CN CN201210198020.5A patent/CN102677147B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1553214A2 (en) * | 2002-02-20 | 2005-07-13 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| CN101851782A (en) * | 2010-05-19 | 2010-10-06 | 绍兴县精功机电研究所有限公司 | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace |
| CN102321909A (en) * | 2011-09-30 | 2012-01-18 | 安阳市凤凰光伏科技有限公司 | The method of casting production single crystal-like silicon |
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| CN102677147A (en) | 2012-09-19 |
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Address after: 215422, Jiangsu, Suzhou, Taicang Zhenkang bridge 29, 504 Applicant after: Gan Dayuan Address before: 215422, Jiangsu, Suzhou, Taicang Zhenkang bridge 29, 504 Applicant before: Gan Dayuan |
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Inventor after: Gan Dayuan Inventor after: Chen Wenjie Inventor after: Liu Kun Inventor before: Gan Dayuan Inventor before: Chen Wenjie Inventor before: Liu Kun |
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Effective date of registration: 20160420 Address after: Qi Road Economic Development Zone 257399 Shandong city of Dongying province Guangrao County North Xikang Road West Patentee after: Shandong Dahai New Energy Development Co., Ltd. Address before: 215422, Jiangsu, Suzhou, Taicang Zhenkang bridge 29, 504 Patentee before: Gan Dayuan |