CN102677147A - Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method - Google Patents
Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method Download PDFInfo
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- CN102677147A CN102677147A CN2012101980205A CN201210198020A CN102677147A CN 102677147 A CN102677147 A CN 102677147A CN 2012101980205 A CN2012101980205 A CN 2012101980205A CN 201210198020 A CN201210198020 A CN 201210198020A CN 102677147 A CN102677147 A CN 102677147A
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Abstract
The invention discloses an ingot furnace suitable for producing a monocrystalline silicon ingot with an ingot casting method. The ingot furnace comprises a furnace body and a silicon melting furnace in the furnace body, wherein a rotating screw rod positioned above the furnace body extends into the silicon melting furnace; a seed crystal is arranged at the bottom of the rotating screw rod; and the rotating screw rod is provided with a distance sensor for sensing the distance from the bottom of the rotating screw rod to the liquid level of molten silicon in the silicon melting furnace. The ingot furnace disclosed by the invention has the advantages that monocrystalline silicon ingots and monocrystalline silicon type ingots can be produced in the ingot furnace by only one seed crystal without paving the seed crystals at the bottom of the ingot furnace, manufactured products are mainly monocrystalline silicon ingots, only the edges of the manufactured products are monocrystalline silicon type ingots, thus the conversion efficiency of battery sheets manufactured by the monocrystalline silicon ingot is higher, and the composite cost of the monocrystalline silicon ingot is lower than the cost of a monocrystalline silicon ingot manufactured with a straightening method and the cost of a polycrystalline silicon ingot manufactured with an ingot casting method.
Description
Technical field
The present invention relates to a kind of ingot furnace, particularly a kind of ingot furnace that is applicable to through casting ingot method produce single crystal silicon ingot.
Background technology
In the photovoltaic industry, the silicon materials that solar battery sheet uses have three kinds: monocrystalline silicon piece, polysilicon chip, type monocrystalline silicon piece.
The battery sheet efficiency of conversion that monocrystalline silicon piece is processed is the highest, but because monocrystalline silicon piece is the product after being passed through to cut by silicon single crystal ingot, and the making of silicon single crystal ingot need be passed through vertical pulling method; Young crystalline substance through rotation; Slowly promote, from single crystal growing furnace, grow bar-shaped silicon single crystal, cost is higher.
The battery sheet efficiency of conversion that polysilicon chip is processed is minimum, but since polysilicon through producing in the ingot furnace, production cost is well below silicon single crystal.
Battery sheet efficiency of conversion that type monocrystalline silicon piece is made and cost are above between the two; The mode of producing is to lay one deck monocrystalline through the bottom at ingot furnace, and is promptly young brilliant, through the control of thermal field; According to mode type of the producing monocrystalline silicon piece of ingot casting, need to consume a large amount of young crystalline substances.
Summary of the invention
Goal of the invention: to the problems referred to above, the purpose of this invention is to provide a kind of ingot furnace that is applicable to through casting ingot method produce single crystal silicon ingot, in ingot furnace, produce a silicon single crystal ingot and a type silicon single crystal ingot, reduce production costs.
Technical scheme: a kind of ingot furnace that is applicable to through casting ingot method produce single crystal silicon ingot; Comprise body of heater, the intravital silicon fusion of said stove pot; Said body of heater top is provided with rotary screw and stretches in the said silicon fusion pot; The bottom installation of said rotary screw is young brilliant, is provided with apart from sensing device on the said rotary screw, and the said rotary screw of sensing bottom is to the distance of the interior molten silicon liquid level of said silicon fusion pot.
Said rotary screw bottom is a stretching structure, when the molten silicon liquid level is more shallow in the silicon fusion pot, opens stretching structure and contacts with molten silicon to satisfy the rotary screw bottom, proceeds the production of silicon single crystal ingot.
Said rotary screw upper end is installed the argon gas drainage hood and is linked to each other with said body of heater.
But the inherent said silicon fusion pot of said body of heater top is provided with temperature regulating heater.
Said body of heater wall is provided with viewing window.
Beneficial effect: compared with prior art; Advantage of the present invention is in ingot furnace, to produce a silicon single crystal ingot and a type silicon single crystal ingot, only needs a young crystalline substance, need not to lay in the ingot furnace bottom young brilliant; The product that makes is mainly silicon single crystal ingot; Have only edge type of being silicon single crystal ingot, the efficiency of conversion that is made into the battery sheet is higher, and comprehensive cost is lower than silicon single crystal ingot of making through vertical pulling method and the polycrystal silicon ingot of producing through the mode of ingot casting.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment; Further illustrate the present invention; Should understand these embodiment only be used to the present invention is described and be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
As shown in Figure 1, a kind of ingot furnace that is applicable to through casting ingot method produce single crystal silicon ingot comprises body of heater 1, silicon fusion pot 2, and silicon fusion pot 2 places in the body of heater 1; But also comprise rotary screw 3, apart from sensing device 4, argon gas drainage hood 6 temperature regulating heaters 7; But temperature regulating heater 7 is arranged at silicon fusion pot 2 tops in the body of heater 1; Rotary screw 3 is arranged at body of heater 1 top and stretches in the silicon fusion pot 2, and rotary screw 3 bottoms are stretching structure 5, and stretching structure 5 is a telescopic shaft; When opening, telescopic shaft can make the length of rotary screw 3 elongated; Young crystalline substance 9 is installed in rotary screw 3 bottoms, is provided with on the rotary screw 3 apart from sensing device 4, and sensing rotary screw 3 bottoms are to the distance of silicon fusion pot 2 interior molten silicon 10 liquid levels; Argon gas drainage hood 6 is installed in rotary screw 3 upper ends and links to each other with body of heater 1, and argon gas gets in the body of heater 1 through argon gas drainage hood 6.Body of heater 1 wall is provided with viewing window 8.
When using ingot furnace of the present invention to produce,, make young brilliant 9 of rotary screw 3 bottoms reach molten silicon 10 liquid levels top in the silicon fusion pot 2 through extend into the position in the silicon fusion pot 2 apart from sensing device 4 controls revolution screw mandrels 3; In the early stage and the mid-term of production process, rotary screw 3 keeps rotation, and rotary screw 3 bottoms young brilliant 9 extend into molten silicon 10 inside, in the later stage of producing, rotary screw 3 promotes, molten silicon 10 liquid levels are left in rotary screw 3 bottoms, naturally the generation silicon single crystal ingot.In process of production, through calculate the height of molten silicon liquid level apart from sensing device, guarantee that the young brilliant of rotary screw bottom keeps desired location, but temperature regulating heater is regulated temperature in the stove according to practical situation.
Claims (5)
1. one kind is applicable to the ingot furnace through casting ingot method produce single crystal silicon ingot; Comprise the silicon fusion pot (2) in body of heater (1), the said body of heater (1); It is characterized in that: said body of heater (1) top is provided with rotary screw (3) and stretches in the said silicon fusion pot (2); Said rotary screw (3) bottom is installed young brilliant, is provided with on the said rotary screw (3) apart from sensing device (4), and the said rotary screw of sensing (3) bottom is to the distance of the interior molten silicon liquid level of said silicon fusion pot (2).
2. a kind of being applicable to through the ingot furnace of casting ingot method produce single crystal silicon ingot according to claim 1 is characterized in that: said rotary screw (3) bottom is stretching structure (5).
3. a kind of being applicable to through the ingot furnace of casting ingot method produce single crystal silicon ingot according to claim 1 is characterized in that: said rotary screw (3) upper end is installed argon gas drainage hood (6) and is linked to each other with said body of heater (1).
4. a kind of being applicable to through the ingot furnace of casting ingot method produce single crystal silicon ingot according to claim 1 is characterized in that: the inherent said silicon fusion pot of said body of heater (1) (2) but the top is provided with temperature regulating heater (7).
5. a kind of being applicable to through the ingot furnace of casting ingot method produce single crystal silicon ingot according to claim 1 is characterized in that: said body of heater (1) wall is provided with viewing window (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210198020.5A CN102677147B (en) | 2012-06-15 | 2012-06-15 | Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210198020.5A CN102677147B (en) | 2012-06-15 | 2012-06-15 | Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102677147A true CN102677147A (en) | 2012-09-19 |
| CN102677147B CN102677147B (en) | 2015-03-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210198020.5A Expired - Fee Related CN102677147B (en) | 2012-06-15 | 2012-06-15 | Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103160918B (en) * | 2013-02-26 | 2016-06-22 | 宏大中源太阳能股份有限公司 | Quasi-monocrystalline silicon prepare stove and preparation method |
| CN105829587A (en) * | 2013-12-19 | 2016-08-03 | Lg矽得荣株式会社 | View port for observing ingot growth process and ingot growth apparatus including same |
| AU2020289881B1 (en) * | 2020-11-30 | 2021-11-18 | Jinko Solar Co., Ltd. | Single crystal furnace |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1553214A2 (en) * | 2002-02-20 | 2005-07-13 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| CN101851782A (en) * | 2010-05-19 | 2010-10-06 | 绍兴县精功机电研究所有限公司 | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace |
| CN102321909A (en) * | 2011-09-30 | 2012-01-18 | 安阳市凤凰光伏科技有限公司 | The method of casting production single crystal-like silicon |
-
2012
- 2012-06-15 CN CN201210198020.5A patent/CN102677147B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1553214A2 (en) * | 2002-02-20 | 2005-07-13 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| CN101851782A (en) * | 2010-05-19 | 2010-10-06 | 绍兴县精功机电研究所有限公司 | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace |
| CN102321909A (en) * | 2011-09-30 | 2012-01-18 | 安阳市凤凰光伏科技有限公司 | The method of casting production single crystal-like silicon |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103160918B (en) * | 2013-02-26 | 2016-06-22 | 宏大中源太阳能股份有限公司 | Quasi-monocrystalline silicon prepare stove and preparation method |
| CN105829587A (en) * | 2013-12-19 | 2016-08-03 | Lg矽得荣株式会社 | View port for observing ingot growth process and ingot growth apparatus including same |
| US9994969B2 (en) | 2013-12-19 | 2018-06-12 | Sk Siltron Co., Ltd. | View port for observing ingot growth process and ingot growth apparatus including same |
| CN105829587B (en) * | 2013-12-19 | 2018-06-26 | 爱思开矽得荣株式会社 | Observe ingot growing process depending on seeing component and including its crystal ingot grower |
| AU2020289881B1 (en) * | 2020-11-30 | 2021-11-18 | Jinko Solar Co., Ltd. | Single crystal furnace |
| US11795570B2 (en) | 2020-11-30 | 2023-10-24 | Jinko Solar Co., Ltd. | Single crystal furnace |
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| Publication number | Publication date |
|---|---|
| CN102677147B (en) | 2015-03-04 |
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Address after: 215422, Jiangsu, Suzhou, Taicang Zhenkang bridge 29, 504 Applicant after: Gan Dayuan Address before: 215422, Jiangsu, Suzhou, Taicang Zhenkang bridge 29, 504 Applicant before: Gan Dayuan |
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Inventor after: Gan Dayuan Inventor after: Chen Wenjie Inventor after: Liu Kun Inventor before: Gan Dayuan Inventor before: Chen Wenjie Inventor before: Liu Kun |
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Effective date of registration: 20160420 Address after: Qi Road Economic Development Zone 257399 Shandong city of Dongying province Guangrao County North Xikang Road West Patentee after: SHANDONG DAHAI NEW ENERGY DEVELOPMENT Co.,Ltd. Address before: 215422, Jiangsu, Suzhou, Taicang Zhenkang bridge 29, 504 Patentee before: Gan Dayuan |
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