CN202766652U - Ingot furnace suitable for producing monocrystalline silicon ingots by ingot casting method - Google Patents
Ingot furnace suitable for producing monocrystalline silicon ingots by ingot casting method Download PDFInfo
- Publication number
- CN202766652U CN202766652U CN 201220282936 CN201220282936U CN202766652U CN 202766652 U CN202766652 U CN 202766652U CN 201220282936 CN201220282936 CN 201220282936 CN 201220282936 U CN201220282936 U CN 201220282936U CN 202766652 U CN202766652 U CN 202766652U
- Authority
- CN
- China
- Prior art keywords
- ingot
- silicon
- furnace
- heater
- rotary screw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000005266 casting Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 230000004927 fusion Effects 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 abstract description 17
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 4
- 239000002131 composite material Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses an ingot furnace suitable for producing monocrystalline silicon ingots by an ingot casting method. The ingot furnace comprises a furnace body and a silicon fusion pot in the furnace body, wherein a rotating screw rod is arranged above the furnace body and stretches into the silicon fusion pot; a crystal seed is mounted at the bottom of the rotating screw rod; and a distance sensing device is arranged on the rotating screw rod to sense the distance from the bottom of the rotating screw rod to a liquid level of fused silicon in the silicon fusion pot. The ingot furnace has the advantages that the monocrystalline silicon ingots and similar monocrystalline silicon ingots can be produced in the ingot furnace, only one crystal seed is required, and no crystal seed is required to be laid at the bottom of the ingot furnace; fabricated products are mainly the monocrystalline silicon ingot and only derivative products are the similar monocrystalline silicon ingots; the conversion efficiency of a fabricated battery piece is higher; and the composite cost is lower than that of the monocrystalline silicon ingot fabricated by a vertical pulling method and a polycrystalline silicon ingot produced by the ingot casting method.
Description
Technical field
The utility model relates to a kind of ingot furnace, particularly a kind of ingot furnace that is applicable to by casting ingot method produce single crystal silicon ingot.
Background technology
At photovoltaic industry, the silicon materials that solar battery sheet uses have three kinds: monocrystalline silicon piece, polysilicon chip, class monocrystalline silicon piece.
The cell piece efficiency of conversion that monocrystalline silicon piece is made is the highest, but because monocrystalline silicon piece is the product after being passed through to cut by silicon single crystal ingot, and the making of silicon single crystal ingot need to be passed through vertical pulling method, young crystalline substance by rotation, slowly promote, grow bar-shaped silicon single crystal from single crystal growing furnace, cost is higher.
The cell piece efficiency of conversion that polysilicon chip is made is minimum, but since polysilicon by producing in the ingot furnace, production cost is well below silicon single crystal.
The cell piece efficiency of conversion that the class monocrystalline silicon piece is made and cost are above between the two, the mode of producing is to lay one deck monocrystalline by the bottom at ingot furnace, and is namely young brilliant, by the control of thermal field, produce the class monocrystalline silicon piece according to the mode of ingot casting, need to consume a large amount of young crystalline substances.
The utility model content
The utility model purpose: for the problems referred to above, the purpose of this utility model provides a kind of ingot furnace that is applicable to by casting ingot method produce single crystal silicon ingot, produces silicon single crystal ingot and class silicon single crystal ingot in ingot furnace, reduces production costs.
Technical scheme: a kind of ingot furnace that is applicable to by casting ingot method produce single crystal silicon ingot, comprise the silicon fusion boiler in body of heater, the described body of heater, described body of heater top arranges rotary screw and stretches in the described silicon fusion boiler, described rotary screw bottom is installed young brilliant, the Distance-sensing device is set on the described rotary screw, and the described rotary screw of sensing bottom is to the distance of the interior molten silicon liquid level of described silicon fusion boiler.
Described rotary screw bottom is stretching structure, when the molten silicon liquid level is more shallow in the silicon fusion boiler, opens stretching structure and contacts with molten silicon to satisfy the rotary screw bottom, proceeds the production of silicon single crystal ingot.
Described rotary screw upper end is installed the argon gas drainage hood and is linked to each other with described body of heater.
The inherent described silicon fusion boiler of described body of heater top is provided with adjustable temperature heater.
Be provided with viewing window on the described body of heater wall.
Beneficial effect: compared with prior art, the utility model has the advantages that and in ingot furnace, produce silicon single crystal ingot and class silicon single crystal ingot, only need a young crystalline substance, need not to lay in the ingot furnace bottom young brilliant, the product that makes is mainly silicon single crystal ingot, only having the edge is the class silicon single crystal ingot, and the efficiency of conversion that is made into cell piece is higher, and comprehensive cost is lower than the silicon single crystal ingot of making by vertical pulling method and the polycrystal silicon ingot of producing by the mode of ingot casting.
Description of drawings
Fig. 1 is the utility model structural representation.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the utility model, should understand these embodiment only is used for explanation the utility model and is not used in restriction scope of the present utility model, after having read the utility model, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present utility model.
As shown in Figure 1, a kind of ingot furnace that is applicable to by casting ingot method produce single crystal silicon ingot comprises body of heater 1, silicon fusion boiler 2, and silicon fusion boiler 2 places in the body of heater 1; Also comprise rotary screw 3, Distance-sensing device 4, argon gas drainage hood 6, adjustable temperature heater 7, adjustable temperature heater 7 is arranged at body of heater 1 interior silicon fusion boiler 2 tops, rotary screw 3 is arranged at body of heater 1 top and stretches in the silicon fusion boiler 2, rotary screw 3 bottoms are stretching structure 5, stretching structure 5 is telescopic shaft, when opening, telescopic shaft can make the length of rotary screw 3 elongated, rotary screw 3 bottoms install young brilliant 9, Distance-sensing device 4 is set on the rotary screw 3, sensing rotary screw 3 bottoms are to the distance of silicon fusion boiler 2 interior molten silicon 10 liquid levels, argon gas drainage hood 6 is installed in rotary screw 3 upper ends and links to each other with body of heater 1, and argon gas enters in the body of heater 1 by argon gas drainage hood 6.Be provided with viewing window 8 on body of heater 1 wall.
When using the utility model ingot furnace to produce, extend into position in the silicon fusion boiler 2 by Distance-sensing device 4 control rotary screws 3, make young brilliant 9 of rotary screw 3 bottoms reach silicon fusion boiler 2 interior molten silicon 10 liquid levels tops; In early stage and the mid-term of production process, rotary screw 3 keeps rotation, and rotary screw 3 bottoms young brilliant 9 extend into molten silicon 10 inside, in the later stage of producing, rotary screw 3 promotes, molten silicon 10 liquid levels, Nature creating silicon single crystal ingot are left in rotary screw 3 bottoms.In process of production, by the height of Distance-sensing device calculating molten silicon liquid level, guarantee the young brilliant desired location that keeps of rotary screw bottom, adjustable temperature heater is according to temperature in the practical situation regulating stove.
Claims (5)
1. ingot furnace that is applicable to by casting ingot method produce single crystal silicon ingot, comprise the silicon fusion boiler (2) in body of heater (1), the described body of heater (1), it is characterized in that: described body of heater (1) top arranges rotary screw (3) and stretches in the described silicon fusion boiler (2), described rotary screw (3) bottom is installed young brilliant, Distance-sensing device (4) is set on the described rotary screw (3), and the described rotary screw of sensing (3) bottom is to the distance of the interior molten silicon liquid level of described silicon fusion boiler (2).
2. a kind of ingot furnace that is applicable to by casting ingot method produce single crystal silicon ingot according to claim 1, it is characterized in that: described rotary screw (3) bottom is stretching structure (5).
3. a kind of ingot furnace that is applicable to by casting ingot method produce single crystal silicon ingot according to claim 1 is characterized in that: argon gas drainage hood (6) is installed on the described rotary screw (3) is linked to each other with described body of heater (1).
4. a kind of ingot furnace that is applicable to by casting ingot method produce single crystal silicon ingot according to claim 1 is characterized in that: be provided with adjustable temperature heater (7) above the inherent described silicon fusion boiler of described body of heater (1) (2).
5. a kind of ingot furnace that is applicable to by casting ingot method produce single crystal silicon ingot according to claim 1 is characterized in that: be provided with viewing window (8) on described body of heater (1) wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220282936 CN202766652U (en) | 2012-06-15 | 2012-06-15 | Ingot furnace suitable for producing monocrystalline silicon ingots by ingot casting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220282936 CN202766652U (en) | 2012-06-15 | 2012-06-15 | Ingot furnace suitable for producing monocrystalline silicon ingots by ingot casting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202766652U true CN202766652U (en) | 2013-03-06 |
Family
ID=47773238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220282936 Expired - Fee Related CN202766652U (en) | 2012-06-15 | 2012-06-15 | Ingot furnace suitable for producing monocrystalline silicon ingots by ingot casting method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202766652U (en) |
-
2012
- 2012-06-15 CN CN 201220282936 patent/CN202766652U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201473323U (en) | Polycrystalline silicon ingot production furnace capable of effectively controlling thermal field | |
| CN204251762U (en) | A kind of thermal field structure of single crystal furnace | |
| CN102978687B (en) | Crystal growth method of polycrystalline silicon ingot | |
| CN206157273U (en) | Novel single crystal growing furnace | |
| CN102677147B (en) | Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method | |
| CN102433585B (en) | Thermal field structure of quasi-monocrystal ingot furnace | |
| CN202265623U (en) | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon | |
| CN205329210U (en) | Polysilicon ingoting furnace | |
| CN201495107U (en) | Polycrystal furnace with high-quality purification polysilicon | |
| CN206486622U (en) | A kind of device that G7 polycrystal silicon ingots are cast for GT polycrystalline furnaces | |
| CN204251761U (en) | Thermal field structure of single crystal furnace | |
| CN203583004U (en) | Sectional type suspended heat shield | |
| CN202730297U (en) | Czochralski method single crystal furnace thermal field structure | |
| CN202766652U (en) | Ingot furnace suitable for producing monocrystalline silicon ingots by ingot casting method | |
| CN204251771U (en) | A kind of sapphire crystal growth device | |
| CN203715791U (en) | Monocrystal furnace capable of reducing oxygen content on head part of monocrystal silicon crystal bar | |
| CN204959080U (en) | Control by temperature change sapphire growth stove | |
| CN201990762U (en) | Heating device of czochralski single crystal furnace | |
| CN207130360U (en) | A kind of heater | |
| CN202755096U (en) | Heat insulation device for ingot furnace | |
| CN103526278A (en) | Method and apparatus for casting of monocrystalline silicon ingot | |
| CN202022993U (en) | Heating device of polysilicon ingot furnace with split-control top | |
| CN202164374U (en) | Split type heat insulation cage used for cast ingot furnace | |
| CN102242391B (en) | Heater improvement apparatus in ingot furnace producing quasi-single crystal silicon with casting method | |
| CN201695105U (en) | Double-cavity heat-insulation cage of secondary monocrystal silicon ingot furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| C56 | Change in the name or address of the patentee | ||
| CB03 | Change of inventor or designer information |
Inventor after: Gan Dayuan Inventor after: Chen Wenjie Inventor after: Liu Kun Inventor before: Gan Dayuan Inventor before: Chen Wenjie Inventor before: Liu Kun |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 215422, Jiangsu, Suzhou, Taicang Zhenkang bridge 29, 504 Patentee after: Gan Dayuan Address before: 215422, Jiangsu, Suzhou, Taicang Zhenkang bridge 29, 504 Patentee before: Gan Dayuan |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130306 Termination date: 20200615 |