CN205329210U - Polysilicon ingoting furnace - Google Patents
Polysilicon ingoting furnace Download PDFInfo
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- CN205329210U CN205329210U CN201521060399.9U CN201521060399U CN205329210U CN 205329210 U CN205329210 U CN 205329210U CN 201521060399 U CN201521060399 U CN 201521060399U CN 205329210 U CN205329210 U CN 205329210U
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- crucible
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- furnace
- ingoting
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Abstract
The utility model provides a reducing the crystal orientation crooked polysilicon ingoting furnace that grows, including thermal -insulated cage, being equipped with the crucible in the thermal -insulated cage, the crucible bottom is equipped with the crucible bottom plate, and the crucible top is covered with the backplate, and the crucible top is equipped with the hot topping ware, the side is equipped with the lateral part heater, and crucible bottom plate lower extreme sets up the DS piece, and the DS piece sets up on the graphite support column, and even there is a heat preservation felt graphite support column outer lane, is connected with the heat preservation felt bottom the thermal -insulated cage. Compared with the prior art, the utility model discloses can reduce G5 or G6 polysilicon ingoting furnace crucible border side spindle crystal orientation grow crooked earlier to, and then can improve the photoelectric conversion efficiency of silicon chip.
Description
Technical field
This utility model relates to a kind of G5 or G6 polycrystalline ingot furnace crucible, is specifically related to one and can make the reasonable polycrystalline ingot furnace of crystal growth。
Background technology
At present, in photovoltaic industry, the radiating mode in G5 or G6 polycrystalline cast ingot furnace superintendent crystalline substance process is the mode adopting and promoting heat-insulation cage, its structure is as it is shown in figure 1, include heat-insulation cage 1, crucible 5, crucible bottom plate 6, DS block 4 (i.e. heat exchange mass), backplate 7 and top heater 3, side heater 2。In this structure, heat flows out from crucible both sides, and if A is to shown, and the direction of growth of crystal is in opposite direction with what heat flowed out, and this radiating mode can cause that serious crystal orientation bending occurs in crucible edge silicon ingot, as shown in the white circle of Fig. 2 both sides。And then can cause that silicon chip photoelectric transformation efficiency reduces, it addition, the power ratio of the top heater of existing polycrystalline ingot furnace and side heater mostly is 1:1, also it is unfavorable for controlling the crucible surrounding crystal orientation direction of growth。
Utility model content
The purpose of this utility model is for above-mentioned the deficiencies in the prior art, it is provided that a kind of polycrystalline ingot furnace reducing crystal orientation growth curvature。
The technical solution of the utility model is achieved in that a kind of polycrystalline ingot furnace, including heat-insulation cage, crucible it is provided with in heat-insulation cage, crucible bottom is provided with crucible bottom plate, and crucible top is covered with backplate, and crucible is arranged over top heater, side is provided with side heater, crucible bottom plate lower end arranges DS block, DS block is arranged on graphite support column, and graphite support column outer ring is connected with insulation quilt, is connected with insulation quilt bottom heat-insulation cage。
The power of top heater and the power ratio of side heater are 1:0.2。
Compared with prior art, this utility model can reduce Fang Ding crystal orientation, G5 or G6 polycrystalline ingot furnace crucible edge growth curvature first to, and then the photoelectric transformation efficiency of silicon chip can be improved。
Accompanying drawing explanation
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings。
Fig. 1 is the structural representation of prior art。
Fig. 2 is crystal crystal orientation figure prepared by prior art。
Fig. 3 is structural representation of the present utility model。
Fig. 4 is the structural representation in crystal orientation prepared by this utility model。
Wherein: 1. heat-insulation cage, 2. side heater, 3. top heater, 4.DS block, 5. crucible, 6. crucible bottom plate, 7. backplate, 8. graphite support column, 9. insulation quilt。
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is clearly and completely described, it is clear that described embodiment is only a part of embodiment of this utility model, rather than whole embodiments。Based on the embodiment in this utility model, the every other embodiment that those of ordinary skill in the art obtain under not paying creative work premise, broadly fall into the scope of this utility model protection。
As shown in Figures 3 and 4, a kind of polycrystalline ingot furnace, including heat-insulation cage 1, it is provided with crucible 5 in heat-insulation cage 1, bottom crucible 5, is provided with crucible bottom plate 6, crucible 5 top is covered with backplate 7, crucible 5 is arranged over top heater 3, side is provided with side heater 2, and crucible bottom plate 6 lower end arranges DS block 4, DS block 4 and is arranged on graphite support column 8, graphite support column 8 outer ring is connected with insulation quilt 9, is connected with insulation quilt 9 bottom heat-insulation cage 1。
This utility model is in long brilliant process, heat-insulation cage 1 does not promote, and be hollow in the middle part of insulation quilt 9, insulation quilt 9 seals with being connected formation bottom heat-insulation cage 1, can so that heat only from Fig. 3 B flow out to shown direction, will not flow out from edge so that will not run off heat in crucible 5 both sides, and then reduce ingot crystal orientation, crucible surrounding side growth curvature phenomenon。In Fig. 4 in the white circle of both sides shown in, it is possible to find both sides little side's ingot there is no crystal orientation growth curvature phenomenon。
Preferably, the power ratio of the power of top heater 3 and side heater 3 is 1:0.2, so can increase impurities removal ability, reduces ingot crystal orientation, crucible surrounding side growth curvature phenomenon further。
The foregoing is only preferred embodiment of the present utility model; not in order to limit this utility model; all within spirit of the present utility model and principle, any amendment of making, equivalent replacement, improvement etc., should be included within protection domain of the present utility model。
Claims (2)
1. a polycrystalline ingot furnace, including heat-insulation cage (1), crucible (5) it is provided with in heat-insulation cage (1), it is characterized in that: crucible (5) bottom is provided with crucible bottom plate (6), crucible (5) top is covered with backplate (7), crucible (5) is arranged over top heater (3), side is provided with side heater (2), crucible bottom plate (6) lower end arranges DS block (4), DS block (4) is arranged on graphite support column (8), graphite support column (8) outer ring is connected with insulation quilt (9), heat-insulation cage (1) bottom is connected with insulation quilt (9)。
2. polycrystalline ingot furnace according to claim 1, it is characterised in that: the power ratio of the power of top heater (3) and side heater (2) is 1:0.2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521060399.9U CN205329210U (en) | 2015-12-18 | 2015-12-18 | Polysilicon ingoting furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521060399.9U CN205329210U (en) | 2015-12-18 | 2015-12-18 | Polysilicon ingoting furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205329210U true CN205329210U (en) | 2016-06-22 |
Family
ID=56207153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521060399.9U Expired - Fee Related CN205329210U (en) | 2015-12-18 | 2015-12-18 | Polysilicon ingoting furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN205329210U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087043A (en) * | 2016-08-10 | 2016-11-09 | 中联西北工程设计研究院有限公司 | A kind of polysilicon fritting casting ingot method and device |
| CN106087045A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polysilicon fritting ingot casting melt and crystal growing technology |
| CN106119956A (en) * | 2016-08-19 | 2016-11-16 | 西安华晶电子技术股份有限公司 | A kind of polysilicon fritting casting ingot method |
| CN106191995A (en) * | 2016-08-10 | 2016-12-07 | 中联西北工程设计研究院有限公司 | A kind of polysilicon fritting ingot casting high temperature crystal growing technology |
-
2015
- 2015-12-18 CN CN201521060399.9U patent/CN205329210U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087043A (en) * | 2016-08-10 | 2016-11-09 | 中联西北工程设计研究院有限公司 | A kind of polysilicon fritting casting ingot method and device |
| CN106191995A (en) * | 2016-08-10 | 2016-12-07 | 中联西北工程设计研究院有限公司 | A kind of polysilicon fritting ingot casting high temperature crystal growing technology |
| CN106087045A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polysilicon fritting ingot casting melt and crystal growing technology |
| CN106119956A (en) * | 2016-08-19 | 2016-11-16 | 西安华晶电子技术股份有限公司 | A kind of polysilicon fritting casting ingot method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160622 Termination date: 20161218 |