CN206188924U - Polycrystalline silicon ingot furnace - Google Patents
Polycrystalline silicon ingot furnace Download PDFInfo
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- CN206188924U CN206188924U CN201620889097.0U CN201620889097U CN206188924U CN 206188924 U CN206188924 U CN 206188924U CN 201620889097 U CN201620889097 U CN 201620889097U CN 206188924 U CN206188924 U CN 206188924U
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- crucible
- backplate
- graphite
- polycrystalline silicon
- silicon ingot
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Abstract
The utility model provides a polycrystalline silicon ingot furnace is provided with crucible, backplate, apron, bottom plate in this ingot furnace, the crucible is placed on the bottom plate, and the backplate setting is in the crucible outside, and the apron sets up in the crucible top backplate top position all around still is provided with insulation material. Because insulation material only sets up in the position of backplate top, the area temperature who is close to the crucible bottom is higher relatively, is favorable to strengthening the convection current of silicon liquid, reduces the enrichment of impurity. In the long brilliant stage, not only can effectively restrain the crucible side wall forming core, to mixed and disorderly growth the in crucible center, can also avoid the crystalline grain conflict of growing with vertical direction simultaneously, form a large amount of crystal defect, the more smooth high quality silicon bulk of long grain boundary face that from this obtains.
Description
Technical field
The utility model is related to field of polycrystalline silicon ingot, more particularly to a kind of polycrystalline silicon ingot or purifying furnace.
Background technology
The production technology of silicon for solar cell mainly has pulling of silicon single crystal and casting polysilicon, and polycrystalline cast ingot is comparatively
Technique is relatively simple, it is easy to which large-scale production, cost is relatively low.Current polycrystalline cast ingot is to determine crystal grain using the method for directional solidification
To growth, the key point of the technology is to need to make the silicon material of melting state gradually to be cooled down upwards from crucible bottom, so as to reach silicon
Ingot is from crucible bottom to the purpose of crucible top crystallographic orientation.
Due to silica crucible at high temperature can softening transform, itself cannot carry inside silicon material, therefore in ingot casting need
Silica crucible surrounding is fixed into crucible with four pieces of graphite protective plates, it is to avoid silica crucible occurs softening transform.And it is existing normal
Rule ingot casting technology all employs side heater heat supply, is so easily caused the temperature at the graphite protective plate of side heater
It is higher.And without heat-barrier material above graphite protective plate, therefore, graphite protective plate only serves the effect of simple fixed crucible, no
The effect of regulation crystalline substance solid liquid interface long can be played, hence into crystal growing stage, Quartz crucible lateral wall temperature is less than silicon material fusing point, meeting
Cause melting silicon liquid to form nucleus with crucible wall, grown in a jumble to silica crucible center, conflict with vertical direction growth crystal grain,
A large amount of crystal defects are formed, Si wafer quality is influenceed.
The content of the invention
The purpose of this utility model is to provide a kind of polycrystalline silicon ingot or purifying furnace, be provided with the polycrystalline silicon ingot or purifying furnace crucible,
Backplate, cover plate, base plate, crucible are placed on, and backplate is arranged on crucible outside, and cover plate is arranged on crucible top, wherein, institute
State backplate surrounding and be provided with insulation material.
Wherein, described insulation material is graphite carbon felt.
Wherein, described graphite carbon felt is the hard felt of graphite or graphite soft felt.
Wherein, the hard felt of described graphite or graphite soft felt are fixed in graphite protective plate or are passed through by graphite screw rod and nut
Graphite glue is bonded on backplate.
Wherein, described insulation material is arranged on the position above the backplate.
Wherein, distance of the insulation material bottom away from backplate bottom is 5cm-20cm.
The polycrystalline silicon ingot or purifying furnace that the utility model is provided, because insulation material is provided only on the position above backplate, is close to
The regional temperature of crucible bottom is of a relatively high, is conducive to strengthening silicon liquid convection current, reduces the enrichment of impurity.In crystal growing stage, not only
Crucible wall forming core can effectively be suppressed, grown in a jumble to crucible center, while being also avoided that the crystal grain grown with vertical direction
Conflict, forms a large amount of crystal defects, the more smooth high-quality silicon ingot in thus obtained crystal boundary face long.
Brief description of the drawings
Fig. 1 is the polycrystalline silicon ingot or purifying furnace structural representation that the utility model embodiment is provided；
It is entitled corresponding to reference in accompanying drawing：1- crucibles, 2- backplates, 3- cover plates, 4- base plates, 5- insulation materials.
Specific embodiment
Preferred embodiment of the present utility model is described in detail below in conjunction with accompanying drawing, so that those skilled in the art
Member can be better understood from advantages and features of the present utility model, so as to make apparent to protection domain of the present utility model
Define.Obviously, described embodiment is a part of embodiment of the present utility model, rather than whole embodiments.It is based on
Embodiment in the utility model, the institute that those of ordinary skill in the art are obtained on the premise of creative work is not made
There is other embodiment, should all belong to the scope of the utility model protection.
Fig. 1 is refer to, crucible 1, backplate 2, cover plate 3, base plate 4, earthenware are provided with this embodiment, in polycrystalline silicon ingot or purifying furnace
Crucible 1 is placed on base plate 3, and backplate 2 is arranged on the outside of crucible 1, and cover plate 3 is arranged on the top of crucible 1, and the backplate surrounding is provided with
Insulation material, the preferred graphite carbon felt of the insulation material, distance of the graphite carbon felt bottom away from backplate bottom is 5cm-20cm.
Preferably, the graphite carbon felt is the hard felt of graphite or graphite soft felt.
Preferably, the graphite carbon felt is fixed on backplate by graphite screw rod and nut.
Preferably, the graphite carbon felt is fixed on backplate by graphite glue.
Preferably, distance of the graphite carbon felt bottom away from backplate bottom is 7cm-15cm.
It is further preferred that distance of the graphite carbon felt bottom away from backplate bottom is 8cm, 9cm, 10cm, 11cm,
12cm, 13cm, 14cm.
The polycrystalline silicon ingot or purifying furnace that the utility model is provided, because insulation material is provided only on the position above backplate, is close to
The regional temperature of crucible bottom is of a relatively high, is conducive to strengthening silicon liquid convection current, reduces the enrichment of impurity.In crystal growing stage, not only
Crucible wall forming core can effectively be suppressed, grown in a jumble to crucible center, while being also avoided that the crystal grain grown with vertical direction
Conflict, forms a large amount of crystal defects, the more smooth high-quality silicon ingot in thus obtained crystal boundary face long.
Claims (5)
1. a kind of polycrystalline silicon ingot or purifying furnace, is provided with crucible, backplate, cover plate, base plate in the ingot furnace, and crucible is placed on base plate
On, backplate is arranged on crucible outside, and cover plate is arranged on crucible top, it is characterised in that：The backplate surrounding is provided with thermal insulating material
Material, the insulation material is arranged on the position above the backplate.
2. polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：Described insulation material is graphite carbon felt.
3. polycrystalline silicon ingot or purifying furnace according to claim 2, it is characterised in that：Described graphite carbon felt is the hard felt of graphite or stone
The soft felt of ink.
4. polycrystalline silicon ingot or purifying furnace according to claim 3, it is characterised in that：The hard felt of described graphite or graphite soft felt pass through
Graphite screw rod and nut are fixed in graphite protective plate or are bonded on backplate by graphite glue.
5. polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The insulation material bottom is away from backplate bottom
Distance is 5cm-20cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620889097.0U CN206188924U (en) | 2016-08-17 | 2016-08-17 | Polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620889097.0U CN206188924U (en) | 2016-08-17 | 2016-08-17 | Polycrystalline silicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206188924U true CN206188924U (en) | 2017-05-24 |
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ID=58736947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620889097.0U Active CN206188924U (en) | 2016-08-17 | 2016-08-17 | Polycrystalline silicon ingot furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN206188924U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113636744A (en) * | 2021-08-10 | 2021-11-12 | 烟台核晶陶瓷新材料有限公司 | Preparation process of quartz glass crucible and application method of quartz glass crucible for polycrystalline silicon ingot casting |
-
2016
- 2016-08-17 CN CN201620889097.0U patent/CN206188924U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113636744A (en) * | 2021-08-10 | 2021-11-12 | 烟台核晶陶瓷新材料有限公司 | Preparation process of quartz glass crucible and application method of quartz glass crucible for polycrystalline silicon ingot casting |
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