CN202671713U - Crucible for polycrystalline silicon cast ingots - Google Patents
Crucible for polycrystalline silicon cast ingots Download PDFInfo
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- CN202671713U CN202671713U CN 201220138049 CN201220138049U CN202671713U CN 202671713 U CN202671713 U CN 202671713U CN 201220138049 CN201220138049 CN 201220138049 CN 201220138049 U CN201220138049 U CN 201220138049U CN 202671713 U CN202671713 U CN 202671713U
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- crucible
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- source layer
- forming core
- polycrystalline silicon
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Abstract
The utility model provides a crucible for polycrystalline silicon cast ingots. The crucible comprises a main body and a nucleation source layer, wherein the main body comprises a base and a lateral wall upwards extending from the base, the base and the lateral wall jointly enclose a storage space, the nucleation source layer is attached to one side of the base of the main body towards the storage space, and the nucleation layer is a silicon powder coating, a silicon carbide coating, a quartz powder coating and a carbon powder coating. The crucible for polycrystalline silicon cast ingots has the nucleation source layer, and a nucleation source of the nucleation source layer is favorable for silicon materials in a melting state to carry out nucleation quickly.
Description
Technical field
The utility model relates to the polycrystalline silicon ingot casting field, relates in particular to a kind of crucible used for polycrystalline silicon ingot casting.
Background technology
At present, directional solidification system method (being called for short DSS) the stove crystal technique that adopts GT Solar to provide is provided the preparation method of polycrystal silicon ingot, and the method generally includes heating, melts, solidifies the steps such as long crystalline substance, annealing and cooling.In solidifying long brilliant process, be accompanied by the lasting cooling of crucible bottom, the random forming core of the spontaneous formation of silicon material of molten state and random forming core are grown gradually.But because that initial forming core does not have is controlled, easily produce dislocation in the nucleation process, cause the crystal orientation irregular, crystal boundary is irregular, crystal grain inhomogeneous (centimetre having from micron order to tens), the polycrystal silicon ingot efficiency of conversion that therefore prepares by the method is not high, and quality is lower.
For the problem that easily produces dislocation among the above-mentioned preparation method, Japanese scholars FUJUWALA and Chongwen, Taiwan's scholars south have proposed with the grow method of crystal grain of dendrite mode.Its method is to improve condensate depression when initial forming core, so that the silicon material is mainly grown in the dendrite mode, crystal orientation control is (110) and (112), and the crystal grain that grows up to is larger, is generally several centimetres, and take sleeve configuration as main.Although the polycrystal silicon ingot initial bit that makes by the method is few, breed also slowly, have following shortcoming: (1) crystal grain is fast with the speed of dendrite mode transverse growth, and different dendrite is mutually extruding easily, produces stress and defective; (2) crystal grain that makes of growth is larger, in case there is dislocation in megacryst intragranular section, is easy to the expansion in whole megacryst intragranular section, and occupies whole crystal grain; (3) the dendrite mode heat release of growing, the heat that larger crystal grain discharges in process of growth be the required condensate depression of other grain growing around the impact easily, cause other crystal grain to be difficult for growth, so the method is not suitable for large size industry.
When the polycrystalline furnace ingot casting, usually adopt ceramic crucible or quartz crucible to come splendid attire molten silicon liquid, so that the cooling in crucible of molten silicon liquid, annealing and crystallization.
The utility model content
For addressing the above problem, the utility model aims to provide a kind of crucible used for polycrystalline silicon ingot casting, and the polysilicon grain size of using this crucible to make is even, regular, dislocation desity is low and the obvious dendrite of nothing and twin.
The utility model provides a kind of crucible used for polycrystalline silicon ingot casting, this crucible comprises body and forming core source layer, body comprises that base reaches by the upwardly extending sidewall of base, base and sidewall surround a receiving space jointly, forming core source layer is attached to the body base towards the one side of receiving space, and forming core source layer is selected from a kind of in silica flour coating, carborundum powder coating, silica powder coating and the carbon dust coating.
The crucible that is provided with silicon nitride coating in the utility model crucible used for polycrystalline silicon ingot casting and the prior art is the selection of coated material or the purpose that coating is set is all different.
The utility model crucible used for polycrystalline silicon ingot casting has forming core source layer, and its forming core source is conducive to the rapid forming core of silicon material of molten state.
And the crucible that is provided with silicon nitride coating in the prior art is mainly in order to cut off direct contact of molten silicon liquid and crucible body sidewall, thereby the sticking crucible phenomenon of avoiding the main component silicon-dioxide of crucible body and the silicon generation chemical reaction in the molten silicon liquid to cause, thereby the problem of avoiding demoulding difficulty even silicon ingot and crucible to break, and the impurity of avoiding existing in the product of relevant chemical reaction and the crucible body pollutes molten silicon liquid.
Preferably, the sidewall of the utility model crucible used for polycrystalline silicon ingot casting is provided with silicon nitride coating towards the one side of receiving space.In addition, the utility model crucible used for polycrystalline silicon ingot casting body base also can be provided with silicon nitride coating towards the one side setting of receiving space, and forming core source layer is attached to this silicon nitride coating surface.
Polycrystal silicon ingot that the utility model provides and preparation method thereof, polysilicon chip and crucible used for polycrystalline silicon ingot casting have following beneficial effect: crucible used for polycrystalline silicon ingot casting has forming core source layer, and its forming core source is conducive to the rapid forming core of silicon material of molten state.
Description of drawings
Fig. 1 is the schematic diagram of the utility model embodiment one crucible used for polycrystalline silicon ingot casting.
Embodiment
The following stated is preferred implementation of the present utility model; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also are considered as protection domain of the present utility model.
Embodiment one
Fig. 1 is the schematic diagram of the utility model embodiment one crucible used for polycrystalline silicon ingot casting.As shown in Figure 1, a kind of crucible used for polycrystalline silicon ingot casting, this crucible comprises body 1 and forming core source layer 2, body 1 comprises that base reaches by the upwardly extending sidewall of base, base and sidewall surround a receiving space jointly, and forming core source layer 2 is attached to body 1 base towards the one side of receiving space, and forming core source layer 2 is the coating that the mixture of silica flour and silicon nitride forms, this forming core source layer 2 arranges by the mode of coating, and the sidewall of crucible is provided with silicon nitride coating 3 towards the one side of receiving space.
Embodiment two
A kind of crucible used for polycrystalline silicon ingot casting, this crucible comprises body and forming core source layer, body comprises that base reaches by the upwardly extending sidewall of base, base and sidewall surround a receiving space jointly, forming core source layer is attached to the body base towards the one side of receiving space, forming core source layer is the coating that the mixture of carborundum powder and silicon nitride forms, and this forming core source layer arranges by the mode of spraying.
Embodiment three
A kind of crucible used for polycrystalline silicon ingot casting, this crucible comprises body and forming core source layer, body comprises that base reaches by the upwardly extending sidewall of base, base and sidewall surround a receiving space jointly, forming core source layer is attached to the body base towards the one side of receiving space, forming core source layer is the coating that the mixture of silica powder and silicon nitride forms, and this forming core source layer arranges by the mode of spraying.
Embodiment four
A kind of crucible used for polycrystalline silicon ingot casting, this crucible comprises body and forming core source layer, body comprises that base reaches by the upwardly extending sidewall of base, base and sidewall surround a receiving space jointly, crucible body base is provided with silicon nitride coating towards the one side setting of receiving space, and forming core source layer is attached to this silicon nitride coating surface, and forming core source layer is the silica powder coating, this forming core source layer arranges by the mode of coating, and the sidewall of crucible is provided with silicon nitride coating towards the one side of receiving space.
Embodiment five
A kind of crucible used for polycrystalline silicon ingot casting, this crucible comprises body and forming core source layer, body comprises that base reaches by the upwardly extending sidewall of base, base and sidewall surround a receiving space jointly, crucible body base is provided with silicon nitride coating towards the one side setting of receiving space, forming core source layer is attached to this silicon nitride coating surface, and forming core source layer is the silica flour coating, and this forming core source layer arranges by the mode of spraying.
Claims (2)
1. crucible used for polycrystalline silicon ingot casting, it is characterized in that, described crucible comprises body and forming core source layer, described body comprises that base reaches by the upwardly extending sidewall of base, base and sidewall surround a receiving space jointly, described forming core source layer is attached to the body base towards the one side of receiving space, and described forming core source layer is selected from a kind of in silica flour coating, carborundum powder coating, silica powder coating and the carbon dust coating.
2. crucible used for polycrystalline silicon ingot casting as claimed in claim 1 is characterized in that, described sidewall is provided with silicon nitride coating towards the one side of receiving space.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220138049 CN202671713U (en) | 2012-04-01 | 2012-04-01 | Crucible for polycrystalline silicon cast ingots |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220138049 CN202671713U (en) | 2012-04-01 | 2012-04-01 | Crucible for polycrystalline silicon cast ingots |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202671713U true CN202671713U (en) | 2013-01-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220138049 Expired - Fee Related CN202671713U (en) | 2012-04-01 | 2012-04-01 | Crucible for polycrystalline silicon cast ingots |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202671713U (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103320854A (en) * | 2013-06-07 | 2013-09-25 | 英利集团有限公司 | Coating structure for crucible, preparation method thereof, and crucible with coating structure |
| CN103382572A (en) * | 2013-07-26 | 2013-11-06 | 青岛隆盛晶硅科技有限公司 | Crucible for enabling polycrystalline silicon ingot to be free of black edge and preparation method thereof |
| CN103422165A (en) * | 2013-07-22 | 2013-12-04 | 湖南红太阳光电科技有限公司 | Polycrystalline silicon and preparation method thereof |
| CN103469303A (en) * | 2013-09-24 | 2013-12-25 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot and preparation method thereof, polycrystalline silicon chip and crucible for polycrystalline silicon ingot casting |
| CN104047048A (en) * | 2014-06-17 | 2014-09-17 | 徐州工业职业技术学院 | Novel ingot casting crucible and manufacturing method thereof |
| CN104195632A (en) * | 2014-09-04 | 2014-12-10 | 奥特斯维能源（太仓）有限公司 | Method for casting high efficiency polycrystalline silicon ingots |
| CN104342752A (en) * | 2013-07-29 | 2015-02-11 | 晶科能源有限公司 | Method for ingoting polycrystalline silicon |
| CN105803527A (en) * | 2016-05-23 | 2016-07-27 | 江苏协鑫硅材料科技发展有限公司 | Full fusion efficient polycrystalline silicon ingot casting method |
| CN105887191A (en) * | 2016-05-10 | 2016-08-24 | 江西中材太阳能新材料有限公司 | Crucible for polycrystalline silicon ingot casting and preparation method thereof |
| CN109913929A (en) * | 2019-04-29 | 2019-06-21 | 常州大学 | A kind of novel ingot casting crucible pad pasting and preparation method thereof |
-
2012
- 2012-04-01 CN CN 201220138049 patent/CN202671713U/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103320854A (en) * | 2013-06-07 | 2013-09-25 | 英利集团有限公司 | Coating structure for crucible, preparation method thereof, and crucible with coating structure |
| CN103320854B (en) * | 2013-06-07 | 2016-03-02 | 英利集团有限公司 | Crucible coating structure, its preparation method and comprise its crucible |
| CN103422165A (en) * | 2013-07-22 | 2013-12-04 | 湖南红太阳光电科技有限公司 | Polycrystalline silicon and preparation method thereof |
| CN103382572A (en) * | 2013-07-26 | 2013-11-06 | 青岛隆盛晶硅科技有限公司 | Crucible for enabling polycrystalline silicon ingot to be free of black edge and preparation method thereof |
| CN104342752A (en) * | 2013-07-29 | 2015-02-11 | 晶科能源有限公司 | Method for ingoting polycrystalline silicon |
| CN103469303A (en) * | 2013-09-24 | 2013-12-25 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot and preparation method thereof, polycrystalline silicon chip and crucible for polycrystalline silicon ingot casting |
| CN103469303B (en) * | 2013-09-24 | 2016-08-10 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystal silicon ingot and preparation method thereof, polysilicon chip and crucible used for polycrystalline silicon ingot casting |
| CN104047048A (en) * | 2014-06-17 | 2014-09-17 | 徐州工业职业技术学院 | Novel ingot casting crucible and manufacturing method thereof |
| CN104195632A (en) * | 2014-09-04 | 2014-12-10 | 奥特斯维能源（太仓）有限公司 | Method for casting high efficiency polycrystalline silicon ingots |
| CN105887191A (en) * | 2016-05-10 | 2016-08-24 | 江西中材太阳能新材料有限公司 | Crucible for polycrystalline silicon ingot casting and preparation method thereof |
| CN105803527A (en) * | 2016-05-23 | 2016-07-27 | 江苏协鑫硅材料科技发展有限公司 | Full fusion efficient polycrystalline silicon ingot casting method |
| CN105803527B (en) * | 2016-05-23 | 2018-12-11 | 江苏协鑫硅材料科技发展有限公司 | A kind of method of fine melt efficient polycrystalline silicon ingot casting |
| CN109913929A (en) * | 2019-04-29 | 2019-06-21 | 常州大学 | A kind of novel ingot casting crucible pad pasting and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130116 Termination date: 20190401 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |