CN203403171U - Crucible for casting polycrystalline silicon ingot - Google Patents
Crucible for casting polycrystalline silicon ingot Download PDFInfo
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- CN203403171U CN203403171U CN201320420171.0U CN201320420171U CN203403171U CN 203403171 U CN203403171 U CN 203403171U CN 201320420171 U CN201320420171 U CN 201320420171U CN 203403171 U CN203403171 U CN 203403171U
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- crucible
- silicon nitride
- silicon
- coating
- silicon ingot
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Abstract
The utility model discloses a crucible for casting a polycrystalline silicon ingot. The crucible comprises a crucible body and a crucible bottom, wherein a silicon nitride coating is sprayed on the inner surface of the crucible, and silicon nitride powder and a silicon powder coating are sprayed on the silicon nitride coating of the inner surface of the crucible bottom of the crucible. The roughness is changed in the early stage of growth of crystals when nucleuses are formed at the bottom, so that high-efficiency polycrystals can be formed. The crucible has the characteristics that the finished product benefit is high and the cost of a single silicon slice is low.
Description
Technical field
The utility model relates to a kind of polycrystal silicon ingot casting crucible.
Background technology
Solar cell is raw material preparation with polysilicon chip conventionally.And polysilicon chip is made through evolution, slice processing by polycrystalline silicon ingot casting again.Polysilicon silicon ingot is to take high purity polycrystalline silicon as raw material is melt into silicon liquid under hot conditions, through directional freeze crystallization, forms; Its production process has: feed, heat, fusing, crystallization, annealing, cooling.The initial stage nucleation mode solidifying at crystal orientation determines the late growing stage of crystal.Early stage casting ingot process adopts fine melt technique, then by controlling the displacement of heat-insulation cage and the temperature field of Level Change ingot furnace, thereby gives condensate depression of silicon liquid of crucible bottom, and silicon liquid carries out free growth by free nucleation and becomes polycrystal; The silicon chip photoelectric transformation efficiency of this explained hereafter is generally in 17.0% left and right; In order to improve photoelectric transformation efficiency, by technological improvement: original casting ingot process is optimized, form a kind of efficient polycrystalline novel process, that is: at crucible bottom place mat one deck seed crystal, in melting process, control heat-insulation cage displacement and the temperature field of height with ingot furnace, seed crystal is not melted, later stage is controlled TC1 temperature and realizes the growth pattern of crystal on seed crystal, efficiency, in 17.6% left and right, still becomes brilliant ratio lower, and single silicon chip cost is higher.
At present, generally to adopt quartz crucible be the container that loads polycrystalline silicon raw material to ingot casting.And photoelectric transformation efficiency is a lot of in 17.5% efficient polycrystal silicon ingot production method, as quartz crucible bottom design become to inverted pyramid shape structure, in order that increase the roughness of crystal under the one-tenth nuclear environment of early growth period, improve Nucleation; In addition, a lot of producers of silicon chip manufacturing enterprise adopt at quartz crucible bottom lay one deck broken silicon wafers and make seed crystal, increase the roughness of crystal under the one-tenth nuclear environment of early growth period, to guide silicon liquid, directional solidification to form polycrystal.
Utility model content
Its object of the utility model is just to provide a kind of polycrystal silicon ingot casting crucible, and the roughness while changing crystal early growth period bottom nucleation, in the hope of growing efficient polycrystalline, has the advantages that finished product income is high, single silicon chip cost is low.
The technical scheme that realizes above-mentioned purpose and take, at the bottom of comprising crucible body, crucible, described inner surface of crucible spraying silicon nitride coating, spraying silicon nitride powder and silica flour coating on internal surface silicon nitride coating at the bottom of described crucible crucible.
Compared with prior art the utlity model has following advantage.
Owing to adding the compounding substances of spray one deck by silicon nitride powder and silica flour in crucible bottom, the roughness while changing crystal early growth period bottom nucleation, in the hope of growing efficient polycrystalline, has the advantages that finished product income is high, single silicon chip cost is low.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Fig. 1 is the utility model structural representation.
Fig. 2 be in Fig. 1 A to local enlarged diagram.
Embodiment
This device comprises at the bottom of crucible body 1, crucible 2, as shown in Figure 1, 2, and described inner surface of crucible spraying silicon nitride coating, spraying silicon nitride powder and silica flour coating 3 on 2 internal surface silicon nitride coatings at the bottom of described crucible crucible.
Owing to producing efficient polycrystalline at crucible bottom tiling one deck seed crystal, but its yield rate is low, and single silicon chip cost is high; And the weight at crucible bottom tiling one deck seed crystal there are certain requirements, and quantity is conventionally at 10-15 kilogram; The silicon chip manufacturing enterprise good for quality and output is large, is difficult to have a large amount of broken silicon wafers to guarantee this demand; Therefore seek to do without broken silicon wafers the method for seed, become research direction; The utility model is, for preventing that the sticky crucible phenomenon that silicon crystal and crucible stick together from appearring in crucible in ingot casting process, first need crucible spraying silicon nitride powder to form silicon nitride coating, after having sprayed for the first time, crucible bottom well heater is set as to 50 ℃, after its moisture evaporation, in crucible bottom, add spray one deck by the compounding substances of silicon nitride powder and silica flour, the ratio of silicon nitride powder and silica flour is that 3-5:1, spray-on coating thickness are 0.2-0.4mm.For preventing later stage spray-on coating peeling and dry linting, the temperature setting that plays spray is set to 80 °.Keeping on the basis of original crucible spraying silicon nitride coating, by adding the mixed coating of spray silicon nitride powder and silica flour, the roughness while changing crystal early growth period bottom nucleation, in the hope of growing efficient polycrystalline, reach finished product income high, the target that single silicon chip cost is low.
Embodiment 1,450 grams of silicon nitride powders of clean quartz crucible inner surface spraying formed after silicon nitride coatings, and dry removal after moisture, then get silicon nitride powder and silica flour water solvent is even in 3:1 ratio, and being sprayed on crucible bottom, spray-on coating thickness is 0.2mm; The temperature setting that plays spray of crucible body is set to 80 °;
Embodiment 2,500 grams of silicon nitride powders of clean quartz crucible inner surface spraying are formed after silicon nitride coatings, dry removal after moisture, then get silicon nitride powder and silica flour water solvent is even in 5:1 ratio, be sprayed on crucible bottom, spray-on coating thickness is 0.3-0.4mm; The temperature setting that plays spray of crucible body is set to 80 °.
Claims (1)
1. a polycrystal silicon ingot casting crucible, comprises (2) at the bottom of crucible body (1), crucible, it is characterized in that described inner surface of crucible spraying silicon nitride coating, spraying silicon nitride powder and silica flour coating (3) on (2) internal surface silicon nitride coating at the bottom of described crucible crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320420171.0U CN203403171U (en) | 2013-07-16 | 2013-07-16 | Crucible for casting polycrystalline silicon ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320420171.0U CN203403171U (en) | 2013-07-16 | 2013-07-16 | Crucible for casting polycrystalline silicon ingot |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203403171U true CN203403171U (en) | 2014-01-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320420171.0U Expired - Fee Related CN203403171U (en) | 2013-07-16 | 2013-07-16 | Crucible for casting polycrystalline silicon ingot |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203403171U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103882517A (en) * | 2014-04-04 | 2014-06-25 | 阿特斯(中国)投资有限公司 | Preparation method of polycrystalline silicon ingot |
| CN104831349A (en) * | 2015-05-26 | 2015-08-12 | 江西旭阳雷迪高科技股份有限公司 | Method for increasing silicon slice quality through polycrystalline silicon ingot casting |
| CN105818485A (en) * | 2015-01-06 | 2016-08-03 | 常熟华融太阳能新型材料有限公司 | Quartz crucible coating used for polycrystalline silicon ingot and preparation method thereof |
| DE102015216734A1 (en) | 2015-09-02 | 2017-03-02 | Alzchem Ag | Crucible for the production of silicon ingots, process for its production and silicon ingots |
| CN108517557A (en) * | 2018-05-22 | 2018-09-11 | 英利能源（中国）有限公司 | The preparation method and efficient polycrystalline silicon ingot of efficient polycrystalline silicon ingot |
-
2013
- 2013-07-16 CN CN201320420171.0U patent/CN203403171U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103882517A (en) * | 2014-04-04 | 2014-06-25 | 阿特斯(中国)投资有限公司 | Preparation method of polycrystalline silicon ingot |
| CN105818485A (en) * | 2015-01-06 | 2016-08-03 | 常熟华融太阳能新型材料有限公司 | Quartz crucible coating used for polycrystalline silicon ingot and preparation method thereof |
| CN104831349A (en) * | 2015-05-26 | 2015-08-12 | 江西旭阳雷迪高科技股份有限公司 | Method for increasing silicon slice quality through polycrystalline silicon ingot casting |
| DE102015216734A1 (en) | 2015-09-02 | 2017-03-02 | Alzchem Ag | Crucible for the production of silicon ingots, process for its production and silicon ingots |
| WO2017036822A1 (en) | 2015-09-02 | 2017-03-09 | Alzchem Ag | Crucible for producing silicon ingots, method for its production and silicon ingot |
| CN108517557A (en) * | 2018-05-22 | 2018-09-11 | 英利能源（中国）有限公司 | The preparation method and efficient polycrystalline silicon ingot of efficient polycrystalline silicon ingot |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140122 Termination date: 20140716 |
|
| EXPY | Termination of patent right or utility model |