KR101271649B1 - Manufacturing method of high quality multicrystalline silicon ingot using monocrystalline silicon seed - Google Patents

Manufacturing method of high quality multicrystalline silicon ingot using monocrystalline silicon seed Download PDF

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KR101271649B1
KR101271649B1 KR1020110082328A KR20110082328A KR101271649B1 KR 101271649 B1 KR101271649 B1 KR 101271649B1 KR 1020110082328 A KR1020110082328 A KR 1020110082328A KR 20110082328 A KR20110082328 A KR 20110082328A KR 101271649 B1 KR101271649 B1 KR 101271649B1
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silicon
crucible
single crystal
seed
melt
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KR20130019992A (en
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김영조
윤원태
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주식회사 인솔텍
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The present invention is a method for producing a high quality polycrystalline silicon ingot using a single crystal silicon seed, more specifically, after contacting the single crystal silicon seed to the molten silicon raw material and cooled to induce directional solidification to produce a polycrystalline silicon ingot similar to the quality of the single crystal silicon. It relates to a manufacturing method. To this end, a silicon melt manufacturing step of filling a silicon crucible into a rectangular crucible and melting the silicon raw material with a heater around the crucible to produce a silicon melt, and a single crystal silicon seed contacting a single crystal silicon seed in an upper center of the silicon melt Contacting step, the directional induction coagulation step of inducing coagulation from the upper direction of the silicon melt to the lower direction by adjusting the temperature by adjusting the heater around the crucible and the cooling unit located above the crucible, the silicon melt as the silicon melt solidifies A single crystal silicon crystal part is formed in the upper and the center of the silicon crystal part, and a silicon crystal part growth step in which the silicon crystal part is grown while the polycrystalline silicon crystal part is formed on the side and the bottom of the silicon melt is performed. Is characterized in that by lifting the silicon crystal growing portion a predetermined height is held at the step prevents the breakage of the crucible according to the parts of the silicon crystal volume change.

Description

MANUFACTURING METHOD OF HIGH QUALITY MULTICRYSTALLINE SILICON INGOT USING MONOCRYSTALLINE SILICON SEED}

The present invention is a method of manufacturing a high quality polycrystalline silicon ingot using a single crystal silicon seed (seed), more specifically, the quality of the single crystal silicon by contacting the molten silicon raw material with the single crystal silicon seed and cooled to induce directional solidification in the downward direction And a method for producing a mono like multicrystalline silicon ingot.

The silicon ingot is a material for making a silicon wafer used in a solar cell. The main purpose of the solar cell is to manufacture a solar cell having a low cost and high efficiency. In order to manufacture a solar cell having a high efficiency, there is a method of newly developing by changing the structure of the solar cell, there is a method of using a high quality silicon raw material used for the silicon wafer.

However, the use of high-quality silicon raw material can increase the efficiency of the solar cell, but there is a problem that the manufacturing cost increases.

Recently, the photovoltaic power generation system which is rapidly progressing is mostly made of crystalline silicon, and more than half of them are solar cells using a polycrystalline silicon substrate manufactured by a casting technique. The reason is that polycrystalline silicon is suitable for mass production because it is lower cost than monocrystalline silicon, and at the same time, efficiency has been steadily improved due to years of technology development, and high efficiency has been realized even when applied as a real module mass production product.

High quality casting technique is an essential task in manufacturing high-efficiency devices, and silicon ingots are produced by using many know-hows such as temperature distribution and solidification rate of solid and liquid interfaces. However, conventional casting techniques for producing polycrystalline silicon ingots include defects in silicon crystals, contamination of iron from crucibles, difficulty in reducing pyramid texturing to increase the absorption of solar light when absorbing solar cells, and the like. There is a problem.

In order to improve the problem, BP solar company recently developed a new Seeded Directional Solidification technology called Mono 2TM , and in Germany, AMG purchased a technology from BP solar company and applied the process It announced that it would develop equipment for

BP solar's Mono 2TM technology uses the casting technique, which is a polycrystalline ingot manufacturing method, but improves the quality of ingot to single crystal level by minimizing large single grains and defects in grains by controlling nucleation and crystal growth conditions. Silicon wafers manufactured using this Mono 2TM technology are known to have fewer defects than conventional substrates, resulting in an efficiency improvement of more than 1%. It is also known that minority carrier life time is improved and pyramid texturing is easy using alkaline solutions.

Mono 2TM technology, however, makes single crystal silicon seeds into small square pieces and fills the bottom of the crucible for making polycrystalline silicon ingots with a single layer to form a large amount of silicon ingots, which requires a large amount of silicon ingots. There was a high problem, and also the silicon ingot manufactured through this technology has a problem that it is difficult to expect high efficiency because the fraction of single crystal silicon in the total silicon ingot does not exceed 60%.

Accordingly, the present invention has been proposed to solve the conventional problems as described above, the object of the present invention is to contact the single crystal silicon seed on the top of the molten silicon raw material to induce directional solidification, so that the temperature is easy to control the single crystal silicon To provide a method for producing a polycrystalline silicon ingot similar to the quality of.

Another object of the present invention is to provide a method of manufacturing a polycrystalline silicon ingot similar to the quality of single crystal silicon which can lift the silicon crystal portion which has been grown and prevent the crucible from being damaged by the volume change of the silicon crystal portion.

Another object of the present invention is a side heater in close contact with the outer surface of the crucible so that the silicon melt, which is a molten silicon raw material in contact with the inner surface of the crucible, does not solidify and maintains a constant temperature in order to easily lift the grown silicon crystal part. It is to provide a method for producing a polycrystalline silicon ingot similar to the quality of single crystal silicon by heating.

In the method of manufacturing a polycrystalline silicon ingot similar to the quality of the single crystal silicon of the present invention, a silicon melt manufacturing step of filling a silicon raw material into a rectangular crucible and melting the silicon raw material with a heater around the crucible to produce a silicon melt, the silicon melt Single crystal silicon seed contact step of contacting the single crystal silicon seed to the upper center of the directional induction, directing the solidification from the upper direction to the lower direction of the silicon melt by lowering and adjusting the temperature to the heater around the crucible and the cooling unit located above the crucible As the silicon melt solidifies, a single crystal silicon crystal part is formed on the top and the center of the silicon melt, and a polycrystalline silicon crystal part is formed on the side and the bottom of the silicon melt to grow the silicon crystal part. A cone crystal growth step is included, and the silicon crystal part growing in the silicon crystal part growth step is lifted by a predetermined height to prevent breakage of the crucible due to volume change of the silicon crystal part.

The present invention has the effect of making the polycrystalline silicon ingot similar to the quality of the single crystal silicon is easy to control the temperature by inducing directional solidification by contacting the single crystal silicon seed on top of the molten silicon raw material silicon melt.

In addition, there is an effect of preventing the crucible from being damaged due to the volume change of the silicon crystal part by lifting the silicon crystal portion that has grown, and the silicon melt in contact with the inner surface of the crucible is not solidified without coagulation so as to easily lift the silicon crystal part that has grown. By heating with a side heater in close contact with the outer surface of the crucible so that the temperature is maintained, there is an effect that can produce a polycrystalline silicon ingot similar to the quality of single crystal silicon.

1 is a flow chart of the present invention.
2 is a block diagram of a polycrystalline silicon ingot manufacturing apparatus according to the present invention.
Figure 3 is a schematic view showing a state in which the single crystal silicon seed of the present invention in contact with the molten silicon.
Figure 4 is a block diagram showing the direction induced solidification state of the molten silicon according to the present invention.
Figure 5 is a schematic view showing a silicon crystal portion is grown according to the present invention.
Figure 6 is a block diagram for comparing the modular density of the single crystal silicon ingot and the present invention.

A preferred embodiment of the method for producing a high quality polycrystalline silicon ingot using the single crystal silicon seed of the present invention will be described in detail with reference to the accompanying drawings.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. It is to be understood that the following terms are defined in consideration of the functions of the present invention, and may be changed according to the intention of the user, the operator, or the precedent, and the meaning of each term should be interpreted based on the contents will be.

One preferred embodiment of the present invention will be described. The following description is only one example and the present invention is not limited thereto.

1 is a flow chart of the present invention.

The production method of high quality polycrystalline silicon ingot using the single crystal silicon seed of the present invention includes a silicon melt manufacturing step, a single crystal silicon seed contacting step, a directional induction solidification step, and a silicon crystal growth step.

2 is a block diagram of a polycrystalline silicon ingot production apparatus according to the present invention, the known configuration of the cooling unit, the transfer unit, etc. in the polycrystalline silicon ingot production apparatus is omitted in the following description and drawings.

In the molten silicon manufacturing step, the silicon raw material 40 is filled in a crucible 30, which is a rectangular parallelepiped, which is located inside the vacuum chamber 10 and has an open top, and then the crucible (the heater 50 around the crucible 30) As the silicon 30 is heated, the silicon raw material 40 is melted to produce a silicon melt 42.

At this time, the heater 50 around the crucible 30 is the side heater 52 spaced at regular intervals from the side and the bottom of the crucible 30 in order to discharge the heat of the heated silicon raw material 40 to the top of the crucible 30. ) And a lower heater 54, and the crucible 30 is heated using the side heater 52 and the lower heater 54.

The crucible 30, the side heater 52 and the lower heater 54 are surrounded by a heat insulator 20 made of graphite in the vacuum chamber 10.

As shown in FIG. 3, the single crystal silicon seed contacting step causes the single crystal silicon seed 70 to contact the upper center of the silicon melt 42.

In this case, the single crystal silicon seed 70 is preferably one of a conical shape and a rectangular parallelepiped, and the single crystal silicon seed 70 is lowered downward through the seed inlet tube 80 at the top of the vacuum chamber 10 to form a silicon melt ( Since it is in contact with the upper surface of the 42, it is more preferable that it is conical in order to make wide contact with the upper surface of the silicon melt 42 in consideration of the structures of the crucible 30 and the seed inlet tube 80 in the vacuum chamber 10. .

Table 1 is shown to compare the position of Mono 2TM of BP solar company and the single crystal silicon seed according to the present invention.

Figure 112011064022235-pat00001

In Mono 2TM technology of BP solar company, as shown in Table 1, there is a difference in preparing a silicon melt by arranging united silicon seeds on the bottom of the crucible and filling a silicon raw material thereon. Since this method fills the bottom of the crucible so that a single layer is formed, it requires a large amount of single crystal silicon seeds, which leads to a high manufacturing cost of the silicon ingot, and only polycrystalline silicon raw materials in a state where the single crystal silicon seeds are not melted. Temperature and cooling is not easy to control because it must be melted, and therefore, the silicon ingot manufactured through this technology has a problem that it is difficult to expect high efficiency because the fraction of single crystal silicon in the total silicon ingot does not exceed 60%.

As shown in FIG. 4, in the directional induction solidification step, the single crystal silicon seed 70 is brought into contact with the silicon melt 42, and then the cooling unit located above the crucible 30 and the heater 50 around the crucible 30. The temperature is adjusted to 60 to induce coagulation from the upper direction of the silicon melt 42 to the lower direction.

At this time, the temperature of the heater 50 should be dropped gradually without dropping rapidly, so that the generation of single crystal silicon crystal grains described later and growth of the single crystal silicon crystal portion occur well.

The cooling unit 60 is preferably a graphite material with a built-in water cooling tube, may expose the cooling unit 60 to the upper portion of the vacuum chamber 10, the single crystal at the top through the seed injection tube (80) It is also possible to inject a large amount of inert gas in the direction of the silicon seed 70. In addition, the method of applying the cooling unit 60 may be applied at the same time.

As shown in FIG. 5, in the silicon crystal growth step, as the silicon melt 42 solidifies, crystal grains of single crystal silicon are formed in the upper and central portions of the silicon melt 42 to form the single crystal silicon crystal 44a. In addition, crystal grains of polycrystalline silicon are formed on the sides and the bottom of the silicon melt 42 to form the polycrystalline silicon crystal portion 44b, thereby growing the silicon crystal portion 44.

Silicon grains grown through the directional induction solidification step have an effect that the grain size of the grains is very large and high quality.

When the growth of the silicon crystal part 44 is completed, a high quality polycrystalline silicon ingot similar to the quality of single crystal silicon is completed.

The growth rate of the silicon crystal part 44 is preferably controlled by lowering the temperature to be 8 ~ 12mm / h. In an embodiment, if the thickness of the silicon ingot is 200 mm, the temperature of the heater is controlled to have a silicon crystal growth time of about 20 hours.

When the growth rate of the silicon crystal part 44 is less than 8 mm / h, a problem of contamination occurs due to the reaction of the crucible 30 and the silicon crystal part 44, and when more than 12 mm / h single crystal silicon crystal The portion 44a may be damaged or the size of the single crystal silicon crystal portion 44a may be narrow in the silicon crystal portion 44 so that the polycrystalline silicon crystal portion 44b may be large.

At this time, the growth of the silicon crystal portion 44 is advanced by a certain height to prevent the crucible 30 is damaged due to the volume change of the silicon crystal portion 44.

In the method of lifting the silicon crystal part 44, the silicon crystal part 44 formed in connection with the single crystal silicon seed 70 is lifted by raising the single crystal silicon seed 70 upwards, and at the same time, the silicon crystal The silicon melt 42 in contact with the inner surface of the crucible 30 is heated by the side heater 52 so that the portion 44 is easily lifted and maintained at a temperature close to the melting point without solidifying.

It is preferable that the temperature of the silicon melt 42 which contacts the inner surface of the crucible 30 is 1400-1430 degreeC.

Since the silicon melt 42 is solid and the silicon melt 42 that has not yet solidified into the silicon crystal 44 is in a liquid state, the single crystal is due to the volume change of the silicon crystal 44 and the difference in specific gravity between the solid and the liquid. When the silicon seed 70 is naturally raised to the top, the silicon crystal part 44 formed integrally connected is lifted up.

Conventional Czochralski technique requires a rotary elevating process in which a single crystal silicon seed is brought into contact with a silicon solution contained in a semi-spherical circular crucible and is gradually pulled while rotating. This process is a crucible for manufacturing a polycrystalline silicon ingot If the process is added to a polycrystalline silicon ingot, expensive equipment such as a hemispherical round crucible and a rotary elevating device must be provided separately, and a work for coating a release agent on the inside of the hemispherical crucible is also required. It goes beyond the original purpose of making polycrystalline silicon ingots.

In contrast, in the present invention, the silicon melt 42 contained in the crucible 30 is formed in the upper and center portions of the silicon melt 42 through the single crystal silicon seed contacting step, the directional induction solidification step, and the silicon crystal growth step. The crystal part 44a of single crystal silicon is formed on the side, and the crystal part 44b of polycrystalline silicon is formed on the side and the bottom of the silicon melt 42, so that the silicon crystal part 44 grows easily. Yet low manufacturing cost and the effect of producing a high quality single crystal silicon ingot, the polycrystalline silicon ingot manufactured by the present invention has a high efficiency of more than 80% fraction of the single crystal silicon in the total silicon ingot.

The high-quality polycrystalline silicon ingot similar to the quality of the finished monocrystalline silicon has a monocrystalline silicon crystal portion 44a at the center and a polycrystalline silicon crystal portion 44b at the periphery, depending on the conditions for manufacturing the wafer during wafer fabrication. May be manufactured in a mixed state, or the polycrystalline silicon crystal portion 44b of the peripheral strain may be removed and only the single crystal silicon crystal portion 44a may be selected and used. Just as a single crystal silicon ingot has a difference in size of grains depending on the top and bottom heights of the ingot, the polycrystalline silicon ingot of the present invention may have a difference in the ratio of single crystals and polycrystals depending on the top and bottom heights of the ingot. Depending on the conditions under which the wafer is applied, it is necessary to select and apply the necessary parts.

Table 2 shows a comparison of the silicon wafers made from a single crystal silicon ingot, a polycrystalline silicon ingot, and the present invention.

Figure 112011064022235-pat00002

While the conventional conventional polycrystalline silicon wafer is inferior in efficiency due to the interface between polycrystals, etc., the polycrystalline silicon wafer according to the present invention is similar in quality to the single crystal silicon wafer and has high productivity with low manufacturing cost, as shown in FIG. (a) The single crystal silicon wafer 100 'manufactured in a semi-spherical circular crucible has a larger area than the (b) the polycrystalline silicon wafer 100 produced in a crucible, a crucible according to the present invention, due to the cutting portion 120'. (C) There is an advantage of high modular density in manufacturing solar cells.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many changes and modifications may be made without departing from the scope of the invention, as defined in the appended claims. It should be interpreted as meaning and concept. Therefore, the embodiments described in the present specification and the configurations shown in the drawings are merely examples of the present invention and are not intended to represent all of the technical ideas of the present invention. Therefore, various equivalents And variations are possible.

10: vacuum chamber 20: heat insulating material
30: crucible 40: silicon raw material
42: silicon melt 44: silicon crystal part
44a: single crystal silicon crystal part 44b: polycrystalline silicon crystal part
50: heater 52: side heater
54: lower heater 60: cooling unit
70: single crystal silicon seed 80: seed injection tube

Claims (7)

A silicon melt manufacturing step of filling a silicon crucible with a rectangular crucible and melting the silicon raw material with a heater around the crucible to produce a silicon melt;
A single crystal silicon seed contacting step of contacting a single crystal silicon seed with an upper center of the silicon melt;
Directional induction coagulation step of inducing coagulation from the upper direction to the lower direction of the silicon melt by adjusting the temperature by controlling the heater around the crucible and the cooling unit located above the crucible,
As the silicon melt solidifies, a single crystal silicon crystal part is formed on the top and the center of the silicon melt, and a polycrystalline silicon crystal part is formed on the side and the bottom of the silicon melt and grows. It includes a silicon crystal growth step of heating the side of the crucible with a side heater so that the silicon melt in contact with the inner surface of the crucible so as not to solidify
The method of manufacturing a high-quality polycrystalline silicon ingot using a single crystal silicon seed, characterized in that to lift the silicon crystals grown in the silicon crystal growth step by a certain height to prevent the crucible from being damaged by the volume change of the silicon crystal parts.
The method of claim 1, wherein in the silicon melt manufacturing step,
The heater around the crucible is a single crystal silicon seed characterized in that the side heater and the lower heater spaced at regular intervals from the sides and the bottom of the crucible to release the heat of the silicon raw material heated to the top of the crucible Method for producing a high quality polycrystalline silicon ingot using.
The method of claim 1, wherein in the single crystal silicon seed contacting step,
The method of manufacturing a high quality polycrystalline silicon ingot using a single crystal silicon seed, characterized in that the single crystal silicon seed is one of a cone and a cuboid.
The method of claim 1, wherein in the silicon crystal growth step,
Method for producing a high quality polycrystalline silicon ingot using a single crystal silicon seed, characterized in that the growth rate of the silicon crystal portion is adjusted to lower the temperature to 8 ~ 12㎜ / h.
The method of claim 1, wherein in the silicon crystal growth step,
The method of manufacturing a high quality polycrystalline silicon ingot using a single crystal silicon seed, characterized in that by lifting the single crystal silicon seed to the top, the growth of the silicon crystal portion connected to the single crystal silicon seed is lifted.
delete The method according to claim 1,
Method for producing a high quality polycrystalline silicon ingot using a single crystal silicon seed, characterized in that the temperature of the silicon melt in contact with the inner surface of the crucible is 1400 ~ 1430 ℃.
KR1020110082328A 2011-08-18 2011-08-18 Manufacturing method of high quality multicrystalline silicon ingot using monocrystalline silicon seed KR101271649B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109161965A (en) * 2018-09-12 2019-01-08 晶科能源有限公司 Cast class method for preparing single crystal

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101461163B1 (en) * 2013-03-19 2014-11-13 소스트 주식회사 Rectangular block type ingot growth device
KR101495119B1 (en) * 2014-01-16 2015-02-24 한양대학교 산학협력단 Method for crystal growth of organic semiconducting nanostructure by eutectic solidification
KR101841550B1 (en) * 2015-12-23 2018-03-23 에스케이실트론 주식회사 Apparatus and method for growing silicon single crystal ingot

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003286024A (en) * 2002-03-27 2003-10-07 Mitsubishi Materials Corp Unidirectional solidified silicon ingot and manufacturing method thereof, silicon plate, substrate for solar cell and target base material for sputtering
JP2009051720A (en) * 2007-08-02 2009-03-12 Tohoku Univ PROCESS FOR PRODUCING Si BULK POLYCRYSTAL INGOT
JP2010241650A (en) * 2009-04-08 2010-10-28 Mitsubishi Materials Techno Corp Method for producing silicon ingot, apparatus for producing silicon ingot, and method for producing silicon crystal
KR20100131149A (en) * 2009-06-05 2010-12-15 주식회사 실트론 Method for manufacturing crystal for solar cell by recycling remaining melt

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003286024A (en) * 2002-03-27 2003-10-07 Mitsubishi Materials Corp Unidirectional solidified silicon ingot and manufacturing method thereof, silicon plate, substrate for solar cell and target base material for sputtering
JP2009051720A (en) * 2007-08-02 2009-03-12 Tohoku Univ PROCESS FOR PRODUCING Si BULK POLYCRYSTAL INGOT
JP2010241650A (en) * 2009-04-08 2010-10-28 Mitsubishi Materials Techno Corp Method for producing silicon ingot, apparatus for producing silicon ingot, and method for producing silicon crystal
KR20100131149A (en) * 2009-06-05 2010-12-15 주식회사 실트론 Method for manufacturing crystal for solar cell by recycling remaining melt

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109161965A (en) * 2018-09-12 2019-01-08 晶科能源有限公司 Cast class method for preparing single crystal

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