CN205999510U - A kind of ingot furnace for casting efficient polycrystalline silicon - Google Patents
A kind of ingot furnace for casting efficient polycrystalline silicon Download PDFInfo
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- CN205999510U CN205999510U CN201620933125.4U CN201620933125U CN205999510U CN 205999510 U CN205999510 U CN 205999510U CN 201620933125 U CN201620933125 U CN 201620933125U CN 205999510 U CN205999510 U CN 205999510U
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- graphite
- ingot
- crucible
- plate
- polycrystalline silicon
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Abstract
A kind of ingot furnace for casting efficient polycrystalline silicon, including heat-insulation cage, described heat-insulation cage inner tip is provided with top heater, and top heater lower end is provided with graphite top board, and graphite top board lower end is provided with crucible, it is provided with graphite protective plate outside described crucible, it is provided with side heater, described crucible lower end is provided with graphite base plate, graphite protective plate lower end is provided with DS block outside graphite protective plate, it is provided with warming plate, described warming plate is provided with hole on the downside of described DS block.This utility model is used for casting in high-efficiency polycrystalline silicon technology, decreases silicon ingot impure point, reduces silicon ingot bottom and sidepiece red sector, the yield rate of silicon ingot is greatly improved, save energy consumption, reduced crystal edge and head dislocation simultaneously, the electricity conversion of polysilicon chip has improved 0.05 0.15%.
Description
Technical field
This utility model is related to a kind of ingot furnace for casting efficient polycrystalline silicon.
Background technology
In photovoltaic industry, crystalline silicon is prepared for dominating with polycrystalline silicon ingot casting technology.Common casting ingot process
Flow process is：Heating, fusing, long brilliant, annealing and cool down.
With the development of polycrystalline cast ingot industry, nowadays each polycrystalline cast ingot enterprise while making great efforts to control cost also more
The quality of concern polysilicon chip, this is also the key point that polycrystalline cast ingot enterprise possesses sustained competitiveness.At present, polycrystalline cast ingot row
Sparetime university is many to lift polysilicon chip quality using half process of smelting, and for fine melt technique, half process of smelting has ingot casting cost
Height, the low problem of silicon ingot yield rate.The height of silicon ingot yield rate depends primarily on crystal growing technology, and the quality of silicon ingot also mainly depends on
In crystal growing technology, so polycrystalline cast ingot needs rational crystal growing technology to obtain excellent silicon ingot.
Utility model content
Its purpose of this utility model is that a kind of ingot furnace for casting efficient polycrystalline silicon of offer, solves common casting
Ingot stove, in casting high-efficiency polycrystalline silicon technology, causes silicon ingot impure point many, and silicon ingot bottom and sidepiece red sector are big, the yield rate of silicon ingot
Low, the big problem of energy consumption.
The technical scheme realized above-mentioned purpose and take, including heat-insulation cage, heat-insulation cage inner tip is provided with top heater,
Top heater lower end is provided with graphite top board, and graphite top board lower end is provided with crucible, is provided with graphite protective plate, graphite outside described crucible
It is provided with side heater, described crucible lower end is provided with graphite base plate, graphite protective plate lower end is provided with DS block, described DS block outside backplate
Downside is provided with warming plate, and described warming plate is provided with hole.
Beneficial effect
Compared with prior art this utility model has advantages below.
1. simple to operate, low cost of manufacture.
2. silicon ingot yield rate lifting 1%-3%, ingot casting energy consumption reduces 0.2-0.5kw.h/kg；
3. reduce silicon ingot edge silicon rod and silicon ingot head dislocation, make silicon ingot conversion efficiency have the lifting of 0.05%-0.15%.
Brief description
The utility model is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is structural representation of the present utility model；
Fig. 2 is insulating plate structure schematic diagram on the downside of DS block in this utility model.
1 shown in figure：Heat-insulation cage；2：Top graphite heater；3：Graphite top board；4：Sidepiece graphite heater；5：Crucible；
6：Graphite protective plate；7：Graphite base plate；8：DS block warming plate；9：DS block；10：DS block bottom warming plate；In figure 10：Protect on the downside of DS block
Warm plate；11：Hole.
Specific embodiment
This device includes heat-insulation cage 1, and heat-insulation cage 1 inner tip is provided with top heater 2, and top heater 2 lower end is provided with
Graphite top board 3, graphite top board 3 lower end is provided with crucible 5, is provided with graphite protective plate 6, is provided with outside graphite protective plate 6 outside described crucible 5
Side heater 4, described crucible 5 lower end is provided with graphite base plate 7, and graphite protective plate 7 lower end is provided with DS block 9, as shown in Figure 1 and Figure 2,
It is provided with warming plate 10, described warming plate 10 is provided with hole 11 on the downside of described DS block 9.
It is provided with warming plate 10 on the downside of described DS block 9 to make using discarded heat-insulation cage warming plate.
In production technology, the change of warming plate 10 shape of DS block 9 downside mainly makes A2 face and A3 to this utility model
The long crystal boundary face in face angle position is changed into convex surface, reduces A2 face and A3 face angle position silicon rod impure point and dislocation.Crystal growing technology is divided
For three megastages：First stage, corresponding silicon ingot height was 0-120mm, and the first stage is divided into three steps, by increasing silicon ingot bottom mistake
Cold degree, long crystalline substance rate controlled, in 1.0-1.3cm/h, makes silicon ingot bottom form more fine uniform crystal grain, reduces silicon ingot bottom
Red sector；The corresponding crystal ingot height of second stage is 120-280mm, and long crystalline substance rate controlled, in 1.6-1.8cm/h, reduces side heater
Heat radiation to silicon ingot surrounding, makes the more vertical of silicon ingot edge silicon rod grain growth, reduces silicon ingot edge silicon rod dislocation, lifting
Ingot quality；Phase III, corresponding crystal ingot height was 280-350mm, long crystalline substance rate controlled 0.6-0.8cm/h, made silicon ingot head miscellaneous
Matter is preferably excluded, and reduces silicon ingot head red sector, reduces silicon ingot head dislocation simultaneously, lifts Ingot quality.The entirely long crystalline substance time
Control in 31-33h, reduce ingot casting energy consumption and silicon ingot sidepiece red sector.
Claims (2)
1. a kind of ingot furnace for casting efficient polycrystalline silicon, including heat-insulation cage（1）, heat-insulation cage（1）Inner tip is provided with top
Heater（2）, top heater（2）Lower end is provided with graphite top board（3）, graphite top board（3）Lower end is provided with crucible（5）, described earthenware
Crucible（5）Outside is provided with graphite protective plate（6）, graphite protective plate（6）Outside is provided with side heater（4）, described crucible（5）Lower end is provided with
Graphite base plate（7）, graphite protective plate（7）Lower end is provided with DS block（9）It is characterised in that described DS block（9）Downside is provided with warming plate
（10）, described warming plate（10）It is provided with hole（11）.
2. a kind of ingot furnace for casting efficient polycrystalline silicon according to claim 1 is it is characterised in that described DS block
（9）The warming plate of downside（10）Made using discarded heat-insulation cage warming plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620933125.4U CN205999510U (en) | 2016-08-25 | 2016-08-25 | A kind of ingot furnace for casting efficient polycrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620933125.4U CN205999510U (en) | 2016-08-25 | 2016-08-25 | A kind of ingot furnace for casting efficient polycrystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205999510U true CN205999510U (en) | 2017-03-08 |
Family
ID=58198237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620933125.4U Expired - Fee Related CN205999510U (en) | 2016-08-25 | 2016-08-25 | A kind of ingot furnace for casting efficient polycrystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205999510U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702486A (en) * | 2017-03-30 | 2017-05-24 | 韩华新能源科技有限公司 | High crystal quality polysilicon ingot thermal field |
-
2016
- 2016-08-25 CN CN201620933125.4U patent/CN205999510U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702486A (en) * | 2017-03-30 | 2017-05-24 | 韩华新能源科技有限公司 | High crystal quality polysilicon ingot thermal field |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170308 Termination date: 20200825 |