CN201842895U - Graphite crucible of monocrystalline silicon growing furnace - Google Patents
Graphite crucible of monocrystalline silicon growing furnace Download PDFInfo
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- CN201842895U CN201842895U CN201020596603XU CN201020596603U CN201842895U CN 201842895 U CN201842895 U CN 201842895U CN 201020596603X U CN201020596603X U CN 201020596603XU CN 201020596603 U CN201020596603 U CN 201020596603U CN 201842895 U CN201842895 U CN 201842895U
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- crucible
- monocrystalline silicon
- graphite crucible
- growing furnace
- lobe
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Abstract
The utility model discloses a graphite crucible of a monocrystalline silicon growing furnace, which is characterized in that the graphite crucible adopts a three-blade type graphite crucible, and the tops of all crucible blades of the three-blade type graphite crucible are connected through connecting bodies. The utility model has the advantages that the oxygen content in the monocrystalline silicon production can be reduced, and the effective protection effect can be realized on the graphite crucible per se and a quartz crucible arranged in the graphite crucible.
Description
Technical field
The utility model relates to a kind of silicon single crystal manufacturing apparatus, particularly be a kind of plumbago crucible of monocrystalline silicon growing furnace.
Background technology
The plumbago crucible of traditional solar monocrystalline silicon growth furnace is selected the single-lobe formula substantially for use, single-lobe formula plumbago crucible is simple in structure, self possesses advantage, but it has its shortcoming, relatively poor as the crucible bottom insulation, like this for the quartz crucible of being located in the plumbago crucible, the silicon material melt upper and lower temperature difference of its inner splendid attire is bigger, improved the Heating temperature of melt, consequently increased the speed of response of silicon material and quartz crucible, the axial thermal convection of melt is accelerated, and finally causes the oxygen level in the monocrystalline silicon production to improve, and has reduced the quality of production of silicon single crystal.
Summary of the invention
In view of the problem that present known technology exists, the technical problems to be solved in the utility model is to be to provide a kind of oxygen level that can reduce in the monocrystalline silicon production, and itself is reached the monocrystalline silicon growing furnace plumbago crucible that quartz crucible has provide protection.
For solving the problems of the technologies described above, the utility model takes following technical scheme to finish:
The plumbago crucible of monocrystalline silicon growing furnace is characterized in that: described plumbago crucible is selected the three-clove style plumbago crucible for use.The bottom insulation of three-clove style plumbago crucible better, so just effectively prevent the bigger situation of silicon material melt upper and lower temperature difference in the quartz crucible, can reduce the Heating temperature of melt, this has reduced the speed of response of silicon material and quartz crucible on the one hand, the axial thermal convection of melt is weakened, so just reduced the oxygen level in the monocrystalline silicon production, improved the quality of production of silicon single crystal.
Connect by connecting parts between each lobe crucible disc top of three-clove style plumbago crucible.Because monocrystalline silicon growing furnace needs frequent blow-on and blowing out; under temperature bad working environments jumpy; plumbago crucible is easy to generate cracking in use for some time; especially concerning the three-clove style plumbago crucible; the fracture easily of cracking back; losing support like this quartz crucible in being located at plumbago crucible just is easy to damage; cause the silicon material melt in the quartz crucible excessive; produce adverse consequences; so connect by connecting parts between each lobe crucible disc top of three-clove style plumbago crucible, can play effective provide protection to itself and quartz crucible.
As preferably, described connecting parts is the metal card line of two bending, and the card line is located at the junction, top of adjacent two lobe crucible discs, and the top of adjacent two lobe crucible discs is provided with hole, and the two lobe crucible discs connection that hole will be adjacent is pierced at the two ends of card line.
Description of drawings
The utility model has following accompanying drawing.
Fig. 1 is a structural representation of the present utility model.
Fig. 2 is the vertical view of Fig. 1.
Embodiment
With reference to accompanying drawing 1,2, the plumbago crucible of this kind monocrystalline silicon growing furnace, select the three-clove style plumbago crucible for use, the three-clove style plumbago crucible is made up of three lobe crucible discs 1 and common pallet 2, connect by connecting parts 3 between each lobe crucible disc 1 top of three-clove style plumbago crucible, the metal card line that described connecting parts 3 is two bendings, the card line is located at the junction, top of adjacent two lobe crucible discs, the top of adjacent two lobe crucible discs is provided with hole, and the two ends of card line are pierced into hole two adjacent lobe crucible discs are connected.
Claims (3)
1. the plumbago crucible of monocrystalline silicon growing furnace, it is characterized in that: described plumbago crucible is selected the three-clove style plumbago crucible for use.
2. the plumbago crucible of monocrystalline silicon growing furnace as claimed in claim 1 is characterized in that: connect by connecting parts between each lobe crucible disc top of three-clove style plumbago crucible.
3. the plumbago crucible of monocrystalline silicon growing furnace as claimed in claim 2, it is characterized in that: described connecting parts is the metal card line of two bending, the card line is located at the junction, top of adjacent two lobe crucible discs, the top of adjacent two lobe crucible discs is provided with hole, and the two ends of card line are pierced into hole two adjacent lobe crucible discs are connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020596603XU CN201842895U (en) | 2010-11-09 | 2010-11-09 | Graphite crucible of monocrystalline silicon growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020596603XU CN201842895U (en) | 2010-11-09 | 2010-11-09 | Graphite crucible of monocrystalline silicon growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201842895U true CN201842895U (en) | 2011-05-25 |
Family
ID=44037790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201020596603XU Expired - Fee Related CN201842895U (en) | 2010-11-09 | 2010-11-09 | Graphite crucible of monocrystalline silicon growing furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201842895U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102296358A (en) * | 2011-06-01 | 2011-12-28 | 湖南金博复合材料科技有限公司 | Combination method for carbon material combined crucible, and combined crucible thereof |
| CN108330532A (en) * | 2018-04-20 | 2018-07-27 | 周俭 | A kind of monocrystalline silica crucible |
| CN108396374A (en) * | 2018-04-20 | 2018-08-14 | 周俭 | A kind of monocrystalline silica crucible |
| CN108396373A (en) * | 2018-04-20 | 2018-08-14 | 周俭 | A kind of monocrystalline silica crucible |
| CN108396372A (en) * | 2018-04-20 | 2018-08-14 | 周俭 | A kind of monocrystalline silica crucible |
| CN108624951A (en) * | 2018-04-20 | 2018-10-09 | 周俭 | A kind of monocrystalline silica crucible |
-
2010
- 2010-11-09 CN CN201020596603XU patent/CN201842895U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102296358A (en) * | 2011-06-01 | 2011-12-28 | 湖南金博复合材料科技有限公司 | Combination method for carbon material combined crucible, and combined crucible thereof |
| CN102296358B (en) * | 2011-06-01 | 2014-03-26 | 湖南金博复合材料科技有限公司 | Combination method for carbon material combined crucible, and combined crucible thereof |
| CN108330532A (en) * | 2018-04-20 | 2018-07-27 | 周俭 | A kind of monocrystalline silica crucible |
| CN108396374A (en) * | 2018-04-20 | 2018-08-14 | 周俭 | A kind of monocrystalline silica crucible |
| CN108396373A (en) * | 2018-04-20 | 2018-08-14 | 周俭 | A kind of monocrystalline silica crucible |
| CN108396372A (en) * | 2018-04-20 | 2018-08-14 | 周俭 | A kind of monocrystalline silica crucible |
| CN108624951A (en) * | 2018-04-20 | 2018-10-09 | 周俭 | A kind of monocrystalline silica crucible |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110525 Termination date: 20121109 |