CN103088419A - Graphite crucible of single-crystal silicon growth furnace - Google Patents
Graphite crucible of single-crystal silicon growth furnace Download PDFInfo
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- CN103088419A CN103088419A CN 201110347115 CN201110347115A CN103088419A CN 103088419 A CN103088419 A CN 103088419A CN 201110347115 CN201110347115 CN 201110347115 CN 201110347115 A CN201110347115 A CN 201110347115A CN 103088419 A CN103088419 A CN 103088419A
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- crucible
- graphite crucible
- crystal silicon
- monocrystalline silicon
- plumbago
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Abstract
The invention discloses a graphite crucible of a single-crystal silicon growth furnace. The graphite crucible is characterized in that the graphite crucible comprises a crucible body which is composed of at least three crucible discs of a same size and a crucible tray, the tops of adjacent crucible discs are connected through a connection piece, and the external surface of the crucible body is provided with uniformly spaced bosses with a same height. The graphite crucible provided by the invention has the advantages of capacity of reducing oxygen content in production of single-crystal silicon, high heat transfer efficiency and rapid heating.
Description
Technical field
The present invention relates to monocrystalline silicon growing equipment, relate in particular to the plumbago crucible of monocrystalline silicon growing furnace.
Background technology
The plumbago crucible of traditional solar monocrystalline silicon growth furnace is selected the single-lobe formula substantially, the crucible bottom insulation of single-lobe formula plumbago crucible is relatively poor, the silicon material melt upper and lower temperature difference of the inner splendid attire of crucible is larger, finally causes the oxygen level in monocrystalline silicon production to improve, and has reduced the quality of production of silicon single crystal.Therefore, should provide some new technical schemes to address the above problem.
Summary of the invention
The objective of the invention is: for above-mentioned deficiency, provide a kind of oxygen level that can reduce in monocrystalline silicon production, heat transfer efficiency is high, heats the plumbago crucible of monocrystalline silicon growing furnace rapidly.
For achieving the above object, the technical solution used in the present invention is: the plumbago crucible of monocrystalline silicon growing furnace, comprise the crucible body, described crucible body is comprised of size identical three lobe crucible discs and a crucible pallet at least, the top of described adjacent crucible disc connects by web member, and described this external surface of crucible has the even and highly identical boss in interval.
Described web member is the metal card line of two bending.
The plumbago crucible of monocrystalline silicon growing furnace of the present invention, the crucible body is comprised of three identical lobe crucible discs of size at least, and the top of adjacent crucible disc connects by web member.Because monocrystalline silicon growing furnace needs frequent blow-on and blowing out; under temperature bad working environments jumpy; plumbago crucible easily produces cracking in use for some time, so the top of crucible disc connects by web member, plumbago crucible is played effective provide protection.Have the even and highly identical boss in interval at this external surface of crucible, arranging of boss increased the plumbago crucible outer surface area, also increased the heat transfer area of plumbago crucible, reaches the increasing transmission quantity, the purpose of rapid heating.
Advantage of the present invention is: can reduce the oxygen level in monocrystalline silicon production, heat transfer efficiency is high, and heating rapidly.
Description of drawings
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is structural representation of the present invention.
Wherein: 1, crucible body, 2, crucible disc, 3, the crucible pallet, 4, web member, 5, boss.
Embodiment
As shown in Figure 1, the plumbago crucible of monocrystalline silicon growing furnace of the present invention, comprise crucible body 1, crucible body 1 is comprised of size identical three lobe crucible discs 2 and a crucible pallet 3 at least, the top of adjacent crucible disc 2 connects by web member 4, crucible body 1 outside surface has the even and highly identical boss in interval 5, and web member 4 is the metal card line of two bending.
The top of crucible disc 2 connects by web member 4, and plumbago crucible is played effective provide protection.Have the even and highly identical boss in interval 5 at crucible body 1 outside surface, arranging of boss 5 increased the plumbago crucible outer surface area, also increased the heat transfer area of plumbago crucible, reaches the increasing transmission quantity, the purpose of rapid heating.
Claims (2)
1. the plumbago crucible of monocrystalline silicon growing furnace, it is characterized in that: comprise the crucible body, described crucible body is comprised of size identical three lobe crucible discs and a crucible pallet at least, the top of described adjacent crucible disc connects by web member, and described this external surface of crucible has the even and highly identical boss in interval.
2. the plumbago crucible of monocrystalline silicon growing furnace according to claim 1, it is characterized in that: described web member is the metal card line of two bending.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110347115 CN103088419A (en) | 2011-11-07 | 2011-11-07 | Graphite crucible of single-crystal silicon growth furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110347115 CN103088419A (en) | 2011-11-07 | 2011-11-07 | Graphite crucible of single-crystal silicon growth furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103088419A true CN103088419A (en) | 2013-05-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110347115 Pending CN103088419A (en) | 2011-11-07 | 2011-11-07 | Graphite crucible of single-crystal silicon growth furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN103088419A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104818531A (en) * | 2015-05-21 | 2015-08-05 | 株洲佳邦难熔金属有限公司 | Method for supporting tungsten crucible in sapphire crystal growth furnace and tungsten crucible supporting device |
| CN105220223A (en) * | 2014-07-02 | 2016-01-06 | 攀时（上海）高性能材料有限公司 | For the crucible that crystal is cultivated |
| CN105937851A (en) * | 2016-06-27 | 2016-09-14 | 江阴市正中科教器材有限公司 | Electric heating crucible |
| CN105953582A (en) * | 2016-06-27 | 2016-09-21 | 江阴市正中科教器材有限公司 | Non-stirring crucible |
-
2011
- 2011-11-07 CN CN 201110347115 patent/CN103088419A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105220223A (en) * | 2014-07-02 | 2016-01-06 | 攀时（上海）高性能材料有限公司 | For the crucible that crystal is cultivated |
| WO2016000617A1 (en) * | 2014-07-02 | 2016-01-07 | 攀时（上海）高性能材料有限公司 | Crucible for crystal cultivation |
| CN104818531A (en) * | 2015-05-21 | 2015-08-05 | 株洲佳邦难熔金属有限公司 | Method for supporting tungsten crucible in sapphire crystal growth furnace and tungsten crucible supporting device |
| CN104818531B (en) * | 2015-05-21 | 2017-07-11 | 株洲佳邦难熔金属股份有限公司 | The method for supporting of tungsten crucible and tungsten crucible support meanss in a kind of sapphire crystallization furnace |
| CN105937851A (en) * | 2016-06-27 | 2016-09-14 | 江阴市正中科教器材有限公司 | Electric heating crucible |
| CN105953582A (en) * | 2016-06-27 | 2016-09-21 | 江阴市正中科教器材有限公司 | Non-stirring crucible |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130508 |