CN202208775U - Upper-lower split Czochralski single-crystal crucible - Google Patents
Upper-lower split Czochralski single-crystal crucible Download PDFInfo
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- CN202208775U CN202208775U CN2011203052103U CN201120305210U CN202208775U CN 202208775 U CN202208775 U CN 202208775U CN 2011203052103 U CN2011203052103 U CN 2011203052103U CN 201120305210 U CN201120305210 U CN 201120305210U CN 202208775 U CN202208775 U CN 202208775U
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- crucible
- sidewall
- split
- pulling
- crystals
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Abstract
The utility model provides an upper-lower split Czochralski single-crystal crucible, which is characterized by including a crucible wall at the upper part and a crucible bottom at the lower part. As the crucible is split into the crucible wall and the crucible bottom, the stress at the transition part 'R' is efficiently reduced, and a graphite crucible can be prevented from cracking during the grow process of monocrystalline silicon in a single crystal furnace; as a result, the service life of the crucible is efficiently prolonged; meanwhile, as the upper part and the lower part are made of different materials, the use of carbon composites is efficiently reduced, and the cost is saved.
Description
Technical field
The utility model relates to the plumbago crucible technical field, particularly relates to a kind of all model straight pulling silicon single crystal furnaces that are applicable to and uses plumbago crucible.
Background technology
Along with the continuous development of process of industrialization, increasing to demands for energy.But the present main flow energy: oil, Sweet natural gas, coal all are Nonrenewable energy resources.Science and technology is development constantly, and the technical bottleneck of renewable energy source step by step quilt is broken.Renewable Energy Development becomes the task of top priority, the most important thing.Monocrystaline silicon solar cell is the renewable new forms of energy of at present technology is the most ripe, photoelectric conversion rate is higher green, environmental protection, cleaning.The crucible that the employable silicon single crystal of the present sun needs to use high-purity isostatic pressing formed graphite making in making processes holds quartz crucible as vessel.Single crystal growing furnace is through isostatic pressing formed graphite heater heats plumbago crucible, and plumbago crucible is delivered to quartz crucible and silicon material to heat again.Oxidizing reaction at high temperature can take place with quartz crucible and silicon vapor, silicon oxide gas etc. in plumbago crucible, and plumbago crucible is consumed, and plumbago crucible needs to reuse, so the life-span of plumbago crucible is most important.
Existing plumbago crucible is an one, and crucible bottom is an arc transition, and the position of transition is called as " R " portion.Oxidizing reaction in the use under softening, the high temperature of quartz crucible makes that " R " portion loss of plumbago crucible is serious, and promptly " R " portion attenuate makes the intensity of plumbago crucible " R " portion reduce greatly." R " portion stress is maximum simultaneously, thereby causes that plumbago crucible in use ftractures, and influences normally carrying out of monocrystalline silicon growing.
Summary of the invention
The purpose of the utility model is to solve the strength problem of plumbago crucible transition portion, improves the work-ing life of plumbago crucible.
The utility model is a kind of up and down split pulling of crystals crucible, it is characterized in that crucible comprise at the bottom of sidewall of crucible and the crucible about two portions.
Wherein, sidewall of crucible adopts carbon-carbon composite.
Wherein, adopt the isostatic pressing formed graphite material at the bottom of the crucible.
Wherein, sidewall of crucible is a drum, and thickness is 5-20mm.
Wherein, sidewall of crucible with at the bottom of the crucible for detachably to cooperate.
Wherein, at the bottom of sidewall of crucible and the crucible be running fit.
The utility model is through being divided into crucible at the bottom of sidewall of crucible and the crucible two portions up and down; Effectively reduced the stress of transition portion " R " portion; Improve the intensity of " R " portion, avoided single crystal growing furnace in the monocrystalline silicon growing process, plumbago crucible rimose phenomenon; Thereby effectively raise the life-span of crucible, improved the output of single crystal growing furnace and the quality of silicon single crystal.Simultaneously,, effectively reduce the use of carbon-carbon composite, practiced thrift cost because material different is adopted in top and the bottom.
Description of drawings
Fig. 1 is the utility model split crucible first example structure synoptic diagram up and down;
Fig. 2 is the utility model split crucible second example structure synoptic diagram up and down.
Embodiment
As shown in Figure 1, Fig. 1 is the utility model split crucible first example structure synoptic diagram up and down.The split carbon carbon graphite pulling of crystals crucible of the utility model by at the bottom of sidewall of crucible 1 and the crucible about in the of 2 two portions form.Sidewall of crucible 1 adopts carbon-carbon composite, and wall thickness is 5-20mm, is designed to round shape, and global formation is convenient, reduces cost.2 employings wait static pressure high purity graphite material at the bottom of the crucible, by blank material global formation.Groove is made at 2 tops at the bottom of the crucible, and sidewall of crucible 1 is embedded at the bottom of the crucible in 2 the groove, guarantees running fit simultaneously, and tolerance clearance 1mm-3mm has effectively solved the thermal stresses that thermal expansion produces, and improves crucible life.
As shown in Figure 2, Fig. 2 is the utility model split crucible second example structure synoptic diagram up and down.The split carbon carbon graphite pulling of crystals crucible of the utility model by at the bottom of sidewall of crucible 1 and the crucible about in the of 2 two portions form.Sidewall of crucible 1 adds the part base for side.2 make protruding dish at the bottom of the crucible, are placed on the bottom of sidewall of crucible 1, guarantee running fit simultaneously, and the top is adopted vertically and cooperated, and the bottom adopts 30-60 ° of inclined-plane to cooperate, thereby improve the intensity of sidewall of crucible, the life-span of effectively improving crucible.Because the siliconising of crucible bottom cracky, this easy design is changed at the bottom of the crucible.Simultaneously at the bottom of the crucible because use graphite material, and size is less, so cost is lower.
Described in this specification sheets is preferred embodiment of the present invention, and above embodiment is only in order to explain technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within scope of the present invention under this invention's idea through the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (6)
1. split pulling of crystals crucible up and down, it is characterized in that crucible comprise at the bottom of sidewall of crucible and the crucible about two portions.
2. pulling of crystals crucible as claimed in claim 1 is characterized in that said sidewall of crucible adopts carbon-carbon composite.
3. pulling of crystals crucible as claimed in claim 1 is characterized in that adopting the isostatic pressing formed graphite material at the bottom of the said crucible.
4. pulling of crystals crucible as claimed in claim 1 is characterized in that said sidewall of crucible is a drum, and thickness is 5-20mm.
5. pulling of crystals crucible as claimed in claim 1, it is characterized in that said sidewall of crucible with at the bottom of the crucible for detachably to cooperate.
6. pulling of crystals crucible as claimed in claim 1 is characterized in that at the bottom of said sidewall of crucible and the crucible be running fit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203052103U CN202208775U (en) | 2011-08-22 | 2011-08-22 | Upper-lower split Czochralski single-crystal crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203052103U CN202208775U (en) | 2011-08-22 | 2011-08-22 | Upper-lower split Czochralski single-crystal crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202208775U true CN202208775U (en) | 2012-05-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203052103U Expired - Lifetime CN202208775U (en) | 2011-08-22 | 2011-08-22 | Upper-lower split Czochralski single-crystal crucible |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202208775U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103614767A (en) * | 2013-11-07 | 2014-03-05 | 镇江大成新能源有限公司 | Three-part crucible |
| CN105839195A (en) * | 2015-01-12 | 2016-08-10 | 江苏拜尔特光电设备有限公司 | Novel monocrystal furnace crucible |
| CN107523882A (en) * | 2016-06-22 | 2017-12-29 | 江苏拜尔特光电设备有限公司 | A kind of crucible of single crystal furnace |
-
2011
- 2011-08-22 CN CN2011203052103U patent/CN202208775U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103614767A (en) * | 2013-11-07 | 2014-03-05 | 镇江大成新能源有限公司 | Three-part crucible |
| CN105839195A (en) * | 2015-01-12 | 2016-08-10 | 江苏拜尔特光电设备有限公司 | Novel monocrystal furnace crucible |
| CN107523882A (en) * | 2016-06-22 | 2017-12-29 | 江苏拜尔特光电设备有限公司 | A kind of crucible of single crystal furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120502 |
|
| CX01 | Expiry of patent term |