CN108396374A - A kind of monocrystalline silica crucible - Google Patents
A kind of monocrystalline silica crucible Download PDFInfo
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- CN108396374A CN108396374A CN201810360174.7A CN201810360174A CN108396374A CN 108396374 A CN108396374 A CN 108396374A CN 201810360174 A CN201810360174 A CN 201810360174A CN 108396374 A CN108396374 A CN 108396374A
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- crucible
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- monocrystalline
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- silica
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of monocrystalline silica crucibles, including crucible portion ontology, are configured to hold silica crucible；The crucible portion includes the first crucible unit, is configured to the bottom in crucible portion, including at least two-part valve body surrounds；Second crucible unit is connect with the first crucible unit, forms the side wall in crucible portion；Hole unit is set to the second crucible unit, the interior or exterior space in connection crucible portion；Hole unit ratio shared on the second crucible unit circumferencial direction, gradually increases from crucible portion bottom side to the other side.The present invention provides a kind of monocrystalline silica crucible, and bottom is surrounded by valve body structure, and dismounting is convenient；The advantages that setting crucible body to two-part structure, improving the stress ability to bear of side wall and top connector portion, extend the service life of crucible.
Description
Technical field
The invention belongs to semiconductor and solar energy crystal growth equipment technical fields, specifically, being related to a kind of monocrystalline silicon
Crucible.
Background technology
Monocrystalline silicon is a kind of semi-conducting material, one is for manufacturing integrated circuit and other electron component, into 21 century
Afterwards, to cope with the environmental problem of getting worse, the demand to clean energy resource promotes the development of photovoltaic market, crystal silicon solar
Battery is the leading products of photovoltaic industry, accounts for the 90% of the market share.Under the pulling of Chinese market, China's photovoltaic hair
Electric industry development is rapid, and China's solar cell annual output developed to the 70% of world's share by accounting for the 1% of world's share originally
More than.Compared with other crystal silicon solar energy batteries, the conversion ratio of monocrystaline silicon solar cell is higher, but its production cost
It is high.Further attention with countries in the world to solar photovoltaic industry, especially the electricity consumptions big country such as China have been formulated a series of
Support policy, encourage to develop and use solar energy, in addition, with the continuous expansion of silicon solar cell application surface, solar-electricity
The demand in pond is increasing, and the demand of silicon single crystal material also just expands on year-on-year basis.
There are two types of monocrystalline silicon growing technologies：Zone-melting process and vertical pulling method, wherein vertical pulling method are currently widely used method.
In the method for monocrystalline growth with czochralski silicon, what is mainly used is the condensation-crystallization driving principle of melt, at solid liquid interface, by
Melt temperature declines, and will generate by liquid transition into solid phase change.For growth quality qualified (single crystal silicon resistivity, oxygen
Content and oxygen concentration distribution, carbon content, metals content impurity, defect etc.) silicon single crystal rod, using Grown by CZ Method when, must
It must consider problems with.It is to be required according to technology first, selection uses suitable single crystal growth apparatus, followed by master one whole
Preparation process, the technology of monocrystalline silicon are covered, including：Thermal field design in monocrystalline system on silicon, it is ensured that crystal growth has reasonably stability
Temperature gradient；Argon gas system design in monocrystalline silicon growing system；Monocrystalline silicon seizes the design of technological system on both sides by the arms；In order to improve
The design of the continuous charging system of production efficiency；The process control of monocrystal silicon preparation technology.
Three kinds of Main Patterns, that is, radiation, convection current and heat transfer are leaned in the transmission of heat.Since the growth of crystal is at high temperature
It carries out, so these three patterns are all present in system.In vertical pulling method, melt be the radiant heat by graphite heater and by
Heating, and the heat transfer inside melt is then mainly against convection current, the Heat transmission inside crystal bar is mainly against conduction.In addition, from
The heat that liquid level and crystal bar surface are lost to periphery is then by radiation effects.The speed of Temperature Distribution in system to crystal growth
(i.e. yield, and then cost) has a great impact, and also has a great impact to monocrystalline quality, including monocrystalline internal flaw is big
Small, density and distribution, the content of oxygen and the precipitate generation of oxygen etc..
Application No. is the Chinese patents of CN201510369177.3 to disclose a kind of single crystal growing furnace Combined carbon crucible,
Including combining crucible crucible body made of carbon-carbon composites or graphite material, the combination crucible crucible body includes crucible cylinder, crucible
Bowl, crucible support, the crucible cylinder are cylindrical shape, and the crucible bowl bottom is equipped with circular hole, and crucible bowl is made of at least 2 valve crucible bowl components；It is described
Boss compatible with crucible bowl bottom circular hole is equipped among crucible support, boss is equipped with concave arc compatible with silica crucible, crucible
Bowl is assemblied in crucible support, and crucible wound packages fits over crucible bowl upper edge, and bottom end and the crucible bowl top of crucible cylinder overlap.
Although the above-mentioned prior art provides a kind of crucible combined using carbon material, since carbon material is by pure carbon
The carbon fiber reinforced carbon matrix composite of element composition, molding are combined by Carbon fibe net tire and charcoal cloth through lamination prefabricated
Part, radial heat conductivility is poor, and there is the monocrystalline silicon oxygen content height that energy consumption is excessive and obtains, and then influence its electricity
The problem of performance.
Therefore, it is necessary to be improved to shortcomings and deficiencies of the prior art, a kind of monocrystalline silica crucible is provided, bottom is by valve
Body structure surrounds, and dismounting is convenient；And it sets crucible body to two-part structure, improves side wall and top connector portion
Stress ability to bear, and then extend the service life of crucible；Due to that can be reduced using the crucible wall of carbon-carbon composite
Sidewall thickness relatively increases the volume of crucible, improves the yield of monocrystalline silicon；The setting of areole unit, improves heater
Heater saves the energy when in use to the heat transfer of silica crucible and silicon melt, by be arranged on side wall different sizes,
Different shape or the different hole unit of distribution density, can effectively control the distribution of silicon melt internal temperature gradient, control silicon
The advantages that convection current of melt, oxygen content to reduce monocrystalline silicon.
In view of this special to propose the present invention.
Invention content
The technical problem to be solved in the present invention is that the above problem can be overcome by overcoming the deficiencies of the prior art and provide one kind
Or the Straight pull monocrystalline silica crucible to solve the above problems at least partly.
In order to solve the above technical problems, the present invention is using the basic conception of technical solution：A kind of monocrystalline silica crucible, including
Crucible portion ontology, is configured to hold silica crucible；
The crucible portion includes
First crucible unit is configured to the bottom in crucible portion, including at least two-part valve body surrounds；
Second crucible unit is connect with the first crucible unit, forms the side wall in crucible portion；
Hole unit is set to the second crucible unit, the interior or exterior space in connection crucible portion；
Hole unit ratio shared on the second crucible unit circumferencial direction, from crucible portion, bottom side is gradual to the other side
Increase.
Wherein, the first crucible unit is made of graphite material, sets bottom crucible body to graphite material, is convenient for temperature
The control of field stability, and due to graphite material cost and material property so that graphite crucible part it is simple for process, at low cost
It is honest and clean, while the service life of crucible is extended again.
In addition, the second crucible unit is made of carbon-carbon composite, setting in this way enhances crucible wall and bottom
The stress ability to bear of coupling part, and then the service life of crucible has been punished severely, simultaneously because using the spy of carbon-carbon composite
Property, crucible wall can reduce sidewall thickness, relatively increase the volume of crucible, improve production capacity.
In one embodiment, the wall thickness of the second crucible unit is 6mm to 15mm.
In one embodiment, the hole unit is the round or ellipse cavernous structure for being set to the second crucible unit.
In one embodiment, the hole unit is the polygonal through hole structure for being set to the second crucible unit.
In one embodiment, distributed quantity of the hole unit on the second crucible unit circumferencial direction, from crucible portion
Bottom side gradually increases to the other side.
In one embodiment, the hole unit on the second crucible unit axial direction, from crucible portion bottom side to
The other side, distance each other are gradually reduced.
In one embodiment, the hole unit is along the second crucible unit axis direction, and size is from crucible portion bottom one
The lateral other side gradually increases.
The setting of hole unit gradual change on the second crucible unit so that crucible internal temperature and convection current can obtain reasonably
Control, the temperature of melt bottom is more slightly lower than melt upper temp, to avoid seething for melt inside large area, so as to avoid
Silicon melt closes on the oxygen-enriched silicon melt in position with silica crucible contact surface and is transported to the lower section that monocrystalline crystallizes position by convection current, can drop
The content of oxygen in low silicon crystal so that obtained single crystal silicon oxygen content reduces, purity higher, avoid caused by oxygen cause
Defect and solar cell due to light decay caused by oxygen.
After adopting the above technical scheme, the present invention has the advantages that compared with prior art：
1, the present invention sets crucible to two-part structure, and the stress for improving side wall and top connector portion bears energy
Power, and then extend the service life of crucible；
2, side wall reduces sidewall thickness using carbon-carbon composite, bottom using the setting of graphite material, increases crucible
Volume improves the yield of monocrystalline silicon；
3, the setting of areole unit improves heat transfer of the heater heater to silica crucible and silicon melt, leads to
It crosses and different sizes, different shape or the different hole unit of distribution density is set on side wall, can effectively control in silicon melt
The distribution of portion's temperature gradient controls the convection current of silicon melt, to reduce the oxygen content of monocrystalline silicon；
4, monocrystalline silica crucible of the present invention improves heat transfer of the heater to crucible portion, reduces energy consumption, together
When but also the reaction inside crucible portion is quicker, improve the utilization rate of the energy
5, the crucible structure provided with multi-clove type, while improving crucible mechanical property, convenient for the residual of removal silica crucible
Body.
The specific implementation mode of the present invention is described in further detail below in conjunction with the accompanying drawings.
Description of the drawings
A part of the attached drawing as the present invention, for providing further understanding of the invention, of the invention is schematic
Embodiment and its explanation do not constitute inappropriate limitation of the present invention for explaining the present invention.Obviously, the accompanying drawings in the following description
Only some embodiments to those skilled in the art without creative efforts, can be with
Other accompanying drawings can also be obtained according to these attached drawings.
In the accompanying drawings：
Fig. 1 is monocrystalline silica crucible schematic cross-sectional view of the present invention；
Fig. 2 is monocrystalline silica crucible schematic top plan view of the present invention.
In figure：1, crucible portion；2, the first crucible unit；3, the second crucible unit；4, hole unit；5, through-hole.
It should be noted that these attached drawings and verbal description are not intended to the design model limiting the invention in any way
It encloses, but is that those skilled in the art illustrate idea of the invention by referring to specific embodiments.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, the technical solution in embodiment is clearly and completely described, following embodiment for illustrating the present invention, but
It is not limited to the scope of the present invention.
In the description of the present invention, it should be noted that term "upper", "front", "rear", "left", "right", " is erected at "lower"
Directly ", the orientation or positional relationship of the instructions such as "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, merely to just
In the description present invention and simplify description, do not indicate or imply the indicated device or element must have a particular orientation, with
Specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
Can also be electrical connection to be mechanical connection；It can be directly connected, it can also be indirectly connected through an intermediary.For this
For the those of ordinary skill in field, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
In routine techniques, the carbon fiber reinforced carbon matrix that the carbon-carbon composites are made of pure carbon is answered
Condensation material, molding are combined into prefabricated component by Carbon fibe net tire and charcoal cloth through lamination, then by chemical vapor deposition density and/or
Green body is made after dipping density, finally by being machined to crucible cylinder 1, crucible bowl 2, density 1.2g/cm3；Crucible support 3 is by isostatic pressed
Graphite material is made, but due to the carbon fiber reinforced carbon matrix composite that carbon material is made of pure carbon, molding by
Carbon fibe net tire and charcoal cloth are combined into prefabricated component through lamination, and radial heat conductivility is poor, it is excessive there is energy consumption and
The monocrystalline silicon oxygen content arrived is high, and then the problem of influence its electrical property, in order to solve the above technical problems, the present invention proposes following skill
Art scheme.
As shown in Figure 1 to Figure 2, a kind of monocrystalline silica crucible of the present invention, including 1 ontology of crucible portion, are configured to hold quartzy earthenware
Crucible, in the extractive process of monocrystalline silicon, since 1 long-time of crucible portion is in the checker of temperature, since temperature change is produced
Raw expanding with cold and contracting with heat and deforming, and can generate huge thrust outward in cooling procedure, can damage crucible portion 1, shorten its longevity
Therefore life in order to preferably transmit heat and improve mechanical property, and extends the service life in crucible portion 1, the present invention is by crucible
Portion 1 is arranged to two parts up and down, i.e. the first crucible unit 2 and the second crucible unit 3, the first crucible unit 2 are configured to crucible portion
1 bottom, the main forced position for holding silica crucible, the second crucible unit 3 are connect with the first crucible unit 2, configuration
For the side wall in crucible portion 1 the continuous transmission of heat, since temperature is excessively high, melt are had simultaneously because in monocrystalline silicon extractive process
The temperature of bottom is more slightly lower than melt upper temp, to avoid seething for large area inside melt, so as to avoid silicon melt with
Silica crucible contact surface closes on the oxygen-enriched silicon melt in position and is transported to the lower section that monocrystalline crystallizes position by convection current, can reduce silicon crystal
The content of middle oxygen so that obtained single crystal silicon oxygen content reduces, purity higher, avoid caused by defect caused by oxygen with
And solar cell is due to light decay caused by oxygen.
Therefore, side wall of the present invention in crucible portion 1 is provided with hole unit 4, increases the transmission of the heat in crucible portion 1, is adding
In thermal process, heat conducts heat from hole unit 4 in crucible portion 1, increases the flowing of heat, and right on 1 side wall of crucible portion
The distribution of hole unit 4 is arranged, convenient for during heating to the convection control inside crucible portion 1, the temperature of melt bottom
Degree is more slightly lower than melt upper temp, to avoid seething for melt inside large area, so as to avoid silicon melt and silica crucible
Contact surface closes on the oxygen-enriched silicon melt in position and is transported to the lower section that monocrystalline crystallizes position by convection current, can reduce containing for oxygen in silicon crystal
Amount so that during long brilliant, purity of monocrystalline silicon higher, crystal seed is slowly drawn crystal seed inside crucible portion 1, due to crucible
4 density of hole unit or size of the setting of 1 top of portion are more than the hole unit 4 of bottom, and therefore, heat is passed faster,
The speed for accelerating crystallization avoids the waste of the energy, and under equal energy, crucible portion 1 of the present invention is more efficient, simultaneously
As a result of carbon-carbon composite so that the thickness of side wall is reduced, and the saturation during single refinement monocrystalline is more
Height avoids the duplication of labour, improves production efficiency, is applied in embodiment, specific as follows,
Embodiment one
As depicted in figs. 1 and 2, a kind of pulling of crystals silica crucible described in the present embodiment, including 1 ontology of crucible portion, configuration
To hold silica crucible；The crucible portion 1 includes hole unit 4, is set to the side wall of 1 ontology of crucible portion, is connected to the interior of crucible portion 1
The external space；The ratio shared on 3 circumferencial direction of the second crucible unit of hole unit 4, from 1 bottom side of crucible portion to the other side by
It is cumulative big, since during refining monocrystalline silicon, the setting of through hole unit 4 preferably controls passing to for heat, and control is molten
Melt the Temperature Distribution of liquid or more, while more energy can also be saved during long brilliant, passes through the side in crucible portion 1
Wall is provided with hole unit 4, increases the gas permeability in crucible portion 1, and during heating, heat conducts heat crucible portion 1 from hole unit 4
It is interior, the flowing of heat is increased, and the distribution of device to hole unit 4 is arranged on 1 side wall of crucible portion, convenient for heating
In the process to the convection control inside crucible portion 1, to avoid seething for melt inside large area, so as to avoid silicon melt
The oxygen-enriched silicon melt in position is closed on silica crucible contact surface, the lower section that monocrystalline crystallizes position is transported to by convection current, can reduce silicon wafer
The content of oxygen in body.
Embodiment two
As depicted in figs. 1 and 2, the present embodiment is further limiting for above-described embodiment one, a kind of list described in the present embodiment
Crystal silicon crucible sets the material in crucible portion 1 to carbon-carbon composite, due to the particularity of carbon-carbon composite, structure
It is distributed to interweave, heat-transfer effect is poor, therefore, is provided with several holes unit 4 on its surface, increases the ventilative of crucible portion 1
Property, translucency, during heating, heat conducts heat from hole unit 4 in crucible portion 1, increases the transmission of heat, and in crucible
The distribution of device to hole unit 4 is arranged above 1 side wall of portion, convenient for during heating to the convection control inside crucible portion 1,
To reduce the oxygen content of monocrystalline silicon.
Further, since the intensity of carbon-carbon composite is big, it is possible to which the crucible wall for greatly reducing respective production is thick
Degree.After integral matching designs inner surface of crucible radian, the carbon-carbon composite crucible of same outside dimension has the appearance of bigger
It is long-pending, after the silica crucible for customization of arranging in pairs or groups, more crystal pulling raw materials can be thrown, cost is significantly reduced, the present invention sets wall thickness
It sets in 6mm to 15mm, crucible wall can reduce sidewall thickness, relatively increase the volume of crucible, improve production capacity.
Embodiment three
As depicted in figs. 1 and 2, the present embodiment is further limiting for above-described embodiment one, one kind described in the present embodiment
Monocrystalline silica crucible, including 1 ontology of crucible portion, are configured to hold silica crucible；The crucible portion 1 includes the first crucible unit 2, is matched
It is set to the bottom in crucible portion 1, including at least two-part valve body surrounds, the first crucible unit 2 is provided centrally with through-hole 5；The
Two crucible units 3 are connect with the first crucible unit 2, form the side wall in crucible portion 1；Hole unit 4 is set to the second crucible unit
3, the interior or exterior space in connection crucible portion 1；The area that 1 inside through hole unit 4 of crucible portion is contacted with exterior space, from crucible portion 1
Bottom side gradually increases to the other side.
The present invention sets crucible to two-part structure, improves the stress of side wall and top connector portion, enhances earthenware
The mechanical property in crucible portion 1, and then extend the service life of crucible, wherein the first crucible unit 2 is made of graphite material,
It sets bottom crucible body to graphite material, is convenient for the control of temperature field stability, and due to graphite material cost and material property,
So that graphite crucible portion 1 divides simple for process, of low cost, while the service life of crucible is extended again.
In addition, the second crucible unit 3 is made of carbon-carbon composite, setting in this way enhances crucible wall and bottom
The stress ability to bear of portion coupling part, and then the service life of crucible has been punished severely, simultaneously because using carbon-carbon composite
Characteristic, crucible wall can reduce sidewall thickness, relatively increase the volume of crucible, improve production capacity.
Example IV
As depicted in figs. 1 and 2, the present embodiment is the further of above-described embodiment one to any embodiment of embodiment three
It limits, a kind of monocrystalline silica crucible described in the present embodiment, the side wall in crucible portion 1 is provided with hole unit 4, further, described
Hole unit 4 gradually increases along 3 axis direction of the second crucible unit, size from 1 bottom side of crucible portion to the other side, hole unit
4 on the second crucible unit 3 gradual change setting so that the temperature of melt bottom is more slightly lower than melt upper temp, to avoid melt
Internal large area is seethed, defeated by convection current so as to avoid silicon melt and silica crucible contact surface from closing on the oxygen-enriched silicon melt in position
It is sent to the lower section at monocrystalline crystallization position, the content of oxygen in silicon crystal can be reduced so that obtained single crystal silicon oxygen content drop
Low, purity higher avoids defect and solar cell caused by generated oxygen due to light decay caused by oxygen.
Crucible internal temperature and convection current are reasonably controlled, by the way that different sizes, no are arranged on side wall
Similar shape or the different hole unit of distribution density, can effectively control the distribution of silicon melt internal temperature gradient, and control silicon is molten
The convection current of body, to the oxygen content of monocrystalline silicon.
Embodiment five
As depicted in figs. 1 and 2, the present embodiment is the further of above-described embodiment one to any embodiment of embodiment three
It limits, a kind of monocrystalline silica crucible described in the present embodiment, the side wall in crucible portion 1 is provided with hole unit 4, further, described
Hole unit 4 gradually increases along 3 axis direction of the second crucible unit, distribution density from 1 bottom side of crucible portion to the other side, hole
The setting of the gradual change on the second crucible unit 3 of unit 4 so that crucible internal temperature and convection current can be controlled reasonably, temperature
The separation that high position accelerates silicon atom and oxygen atom is spent, the content of Oxygen in silicon is reduced so that obtained single crystal silicon
Oxygen content reduces, purity higher.
Embodiment six
As depicted in figs. 1 and 2, the present embodiment is the further of above-described embodiment one to any embodiment of embodiment five
It limits, a kind of monocrystalline silica crucible described in the present embodiment is set to the hole on 1 side wall of crucible portion or the second crucible unit 3
Unit 4 is round hole.
Embodiment seven
As depicted in figs. 1 and 2, the present embodiment is the further of above-described embodiment one to any embodiment of embodiment five
It limits, a kind of monocrystalline silica crucible described in the present embodiment is set to the hole on 1 side wall of crucible portion or the second crucible unit 3
Unit 4 is Oval strips hole.
Embodiment eight
As depicted in figs. 1 and 2, the present embodiment is the further of above-described embodiment one to any embodiment of embodiment five
It limits, a kind of monocrystalline silica crucible described in the present embodiment is set to the hole on 1 side wall of crucible portion or the second crucible unit 3
Unit 4 is polygonal through hole structure, such as slot, rectangular opening, diamond hole etc..
Embodiment nine
As depicted in figs. 1 and 2, the present embodiment is the further of above-described embodiment one to any embodiment of embodiment five
It limits, distributed quantity of the hole unit 4 on 3 circumferencial direction of the second crucible unit described in the present embodiment, from 1 bottom side of crucible portion
Gradually increase to the other side.
Embodiment ten
As depicted in figs. 1 and 2, the present embodiment is the further of above-described embodiment one to any embodiment of embodiment five
It limits, hole unit 4 described in the present embodiment is along 3 axis direction of the second crucible unit, and size is from 1 bottom side of crucible portion to another
Side gradually increases.
Embodiment 11
As shown in Fig. 2, the present embodiment is the further limiting to any embodiment of embodiment ten of above-described embodiment one,
A kind of monocrystalline silica crucible described in the present embodiment, i.e. the first crucible unit 2 is provided centrally with through-hole 5 in 1 bottom of crucible portion, keeps away
Exempt from when crucible is heated, inner quartz crucible expands the stress concentration brought, and improves the mechanical property of crucible, extending makes
Service life.
Meanwhile crucible portion 1 is surrounded by least two parts valve body, and a pedestal (attached drawing does not mark) this reality is additionally provided in bottom
It is three valves to apply the example valve body, and crucible portion 1 is divided into more valve numbers, and mechanical property is better, when silica crucible to be taken out
When, upper cover only need to be taken away, separates flap-type structure sidewall of crucible, silica crucible has been left on pedestal (attached drawing does not mark), this sample prescription
Just it dismantles, time saving and energy saving, application method is succinct.
In the instructions provided here, numerous specific details are set forth.It is to be appreciated, however, that the implementation of the present invention
Example can be put into practice without these specific details.In some instances, well known method, structure is not been shown in detail
And technology, so as not to obscure the understanding of this description.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each inventive aspect,
Above in the description of exemplary embodiment of the present invention, each feature of the invention is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the method for the disclosure should be construed to reflect following intention：It is i.e. required to protect
Shield the present invention claims the more features of feature than being expressly recited in each claim.More precisely, as following
Claims reflect as, inventive aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific implementation mode are expressly incorporated in the specific implementation mode, wherein each claim itself
All as a separate embodiment of the present invention.
Other than such feature and/or at least some of process or unit exclude each other, it may be used and appoint
What combination is disclosed to all features disclosed in this specification (including adjoint claim, abstract and attached drawing) and so
All processes or unit of any method or equipment are combined.Unless expressly stated otherwise, this specification is (including adjoint
Claim, abstract and attached drawing) disclosed in each feature can by provide the alternative features of identical, equivalent or similar purpose Lai
Instead of.
In addition, it will be appreciated by those of skill in the art that although some embodiments described herein include other embodiments
In included certain features rather than other feature, but the combination of the feature of different embodiments means in of the invention
Within the scope of and form different embodiments.For example, in the following claims, embodiment claimed is appointed
One of meaning mode can use in any combination.
It should be noted that the present invention will be described rather than limits the invention for above-described embodiment, and ability
Field technique personnel can design alternative embodiment without departing from the scope of the appended claims.In the claims,
Any reference mark between bracket should not be configured to limitations on claims.Word "comprising" does not exclude the presence of not
Element or step listed in the claims.Word "a" or "an" before element does not exclude the presence of multiple such
Element.In the unit claims listing several devices, several in these devices can be by the same hardware
It embodies.The use of word first, second, and third does not indicate that any sequence.These words can be construed to
Title.
The above is only presently preferred embodiments of the present invention, is not intended to limit the present invention in any form, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this patent
Member without departing from the scope of the present invention, when the technology contents using above-mentioned prompt make it is a little change or be modified to
The equivalent embodiment of equivalent variations, it is right according to the technical essence of the invention as long as being the content without departing from technical solution of the present invention
Any simple modification, equivalent change and modification made by above example, in the range of still falling within the present invention program.
Claims (9)
1. a kind of monocrystalline silica crucible, including
Crucible portion (1) ontology, is configured to hold silica crucible；
It is characterized in that：The crucible portion (1) includes
First crucible unit (2) is configured to the bottom of crucible portion (1), including at least two-part valve body surrounds；
Second crucible unit (3) is connect with the first crucible unit (2), forms the side wall of crucible portion (1)；
Hole unit (4) is set to the second crucible unit (3), is connected to the interior or exterior space of crucible portion (1)；
Hole unit (4) ratio shared on second crucible unit (3) circumferencial direction, from crucible portion (1) bottom side to another
Side gradually increases.
2. a kind of monocrystalline silica crucible according to claim 1, it is characterised in that：The first crucible unit (2) is by graphite
Material is made.
3. a kind of monocrystalline silica crucible according to claim 1, it is characterised in that：The second crucible unit (3) is by carbon-to-carbon
Composite material is made.
4. a kind of monocrystalline silica crucible according to claim 3, it is characterised in that：The wall thickness of the second crucible unit (3)
For 6mm to 15mm.
5. a kind of monocrystalline silica crucible according to claim 1, it is characterised in that：The hole unit (4) is to be set to second
The round or ellipse cavernous structure of crucible unit (3).
6. a kind of monocrystalline silica crucible according to claim 1, it is characterised in that：The hole unit (4) is to be set to second
The polygonal through hole structure of crucible unit (3).
7. according to a kind of any monocrystalline silica crucibles of claim 1-6, it is characterised in that：The hole unit (4) is second
Quantity on crucible unit (3) circumferencial direction, gradually increases from crucible portion (1) bottom side to the other side.
8. according to a kind of any monocrystalline silica crucibles of claim 1-6, it is characterised in that：The hole unit (4) is second
On crucible unit (3) axial direction, from crucible portion (1) bottom side to the other side, distance each other is gradually reduced.
9. according to a kind of any monocrystalline silica crucibles of claim 1-6, it is characterised in that：The hole unit (4) is along second
Crucible unit (3) axis direction, size gradually increase from crucible portion (1) bottom side to the other side.
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| CN201810360174.7A CN108396374A (en) | 2018-04-20 | 2018-04-20 | A kind of monocrystalline silica crucible |
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| CN201810360174.7A CN108396374A (en) | 2018-04-20 | 2018-04-20 | A kind of monocrystalline silica crucible |
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| CN201842895U (en) * | 2010-11-09 | 2011-05-25 | 浙江瑞迪硅谷新能源科技有限公司 | Graphite crucible of monocrystalline silicon growing furnace |
| CN103668437A (en) * | 2012-08-30 | 2014-03-26 | 上海杰姆斯电子材料有限公司 | Crucible used for preparing monocrystalline silicon by czochralski method |
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|---|---|---|---|---|
| JP2000044381A (en) * | 1998-07-21 | 2000-02-15 | Shin Etsu Handotai Co Ltd | Graphite crucible |
| CN201317827Y (en) * | 2008-11-27 | 2009-09-30 | 上海九晶电子材料股份有限公司 | Plumbago-pot used in czochralski crystal growing furnace |
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