CN201317827Y - Plumbago-pot used in czochralski crystal growing furnace - Google Patents
Plumbago-pot used in czochralski crystal growing furnace Download PDFInfo
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- CN201317827Y CN201317827Y CNU2008201560138U CN200820156013U CN201317827Y CN 201317827 Y CN201317827 Y CN 201317827Y CN U2008201560138 U CNU2008201560138 U CN U2008201560138U CN 200820156013 U CN200820156013 U CN 200820156013U CN 201317827 Y CN201317827 Y CN 201317827Y
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- plumbago crucible
- plumbago
- pot
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Abstract
The utility model relates to a plumbago-pot used in a czochralski crystal growing furnace, which comprises a plumbago-pot body including a trivalvular block body, wherein, a bending part at an interface of the trivalvular block body on an inner wall of the plumbago-pot is an R part. The plumbago-pot is characterized in that graphite paper covers the R part at the trivalvular interface. The area of the graphite paper is greater than that of the R-type part at the interface; and the area of the graphite paper is matched with the size of the plumbago-pot. By utilizing the plumbago-pot, the service life of a trivalvular pot is increased by more than 20 percent; the output of monocrystal line silicon is increased by 2 percent because the single crystal growth arrest caused by cracking of the trivalvular pot is avoided during the production process; and the plumbago-pot has the advantages of simple operation, convenient refitment and low cost.
Description
Technical field
The utility model relates to a kind of straight pulling silicon single crystal furnace plumbago crucible, is applicable to the manufacturing of vertical pulling silicon single crystal rod, is mainly used in the production of large diameter silicon monocrystal rod, belongs to the plumbago crucible technical field.
Background technology
Development along with science and technology, human civilization.Human increasing to the application and the usage quantity of the energy.Because tellurian various natural resources is limited,, the mankind replace natural resourcess such as oil, Sweet natural gas, coal so seeking the various new energy hardy.Monocrystaline silicon solar cell is the new forms of energy of present preparation technology is ripe, photoelectric transformation efficiency is higher green, environmental protection, cleaning.It simultaneously also can be not intact natural resources inexhaustible, that use.Yet when vertical pulling method is made the silicon single crystal of used for solar batteries, need make materials such as heating, insulation, support,, also abbreviate three lobe crucibles as the well heater of heating material, the plumbago crucible of propping material with high-purity graphite of static pressure finestructure that waits.Yet the high-purity static pressure fine graphite that waits that is used to make plumbago crucible at present is more rare, and its high-purity static pressure fine graphite technology of preparing that waits is only grasped in a few western developed country hand at present.So prolong graphite piece particularly work-ing life of three lobe crucibles for alleviating the short significant of graphite.
The senior flame ware that plumbago crucible system adopts raw materials such as natural flake graphite, cured stone, silicon carbide to make has good heat conductance and high thermal resistance, and in the high temperature use, thermal expansivity is little, and anxious heat, chilling are had certain anti-strain property.To acid, the erosion resistance of basic solution is stronger, has excellent chemical stability.As shown in Figure 1, plumbago crucible comprises three lobe blocks, and three lobe blocks couple together at interface, forms plumbago crucible, so plumbago crucible is also referred to as three lobe crucibles, the bend of the junction of three lobe blocks of plumbago crucible inwall is called " R " portion.
The traditional using method of plumbago crucible is that quartz crucible is directly put into plumbago crucible.Because at high temperature the oxidizing reaction under the softening and high temperature of quartz crucible makes that " R " portion loss of plumbago crucible three lobe interfaces is serious, promptly serious attenuate.Make the intensity of plumbago crucible " R " portion reduce, thereby cause plumbago crucible in use to ftracture and influence normally carrying out of monocrystalline silicon growing.
Plumbago crucible directly affects can pull out monocrystalline, and the quality quality of pulling monocrystal.Especially loosening and even fully fusing the time when the silicon material, thereby the design of plumbago crucible and improve concerning a competitive crystal pulling producer extremely importantly, will be directly connected to the competitive power of the finished product.
Chinese patent publication number CN1087859A discloses a kind of high temperature resistant plumbago crucible and manufacture craft thereof, and it is raw material that this plumbago crucible adopts soft graphite (graphite paper), with the method for the type distribution extrusion forming of loosing, makes with the pressurization of binding agent bonding.The application of this patent just is used for the smelting of metal, and temperature is below 1000 degrees centigrade, and low capacity, and the temperature of fusion of silicon single-crystal is 1420 degrees centigrade, actual this numerical value that is higher than of temperature when length is brilliant.So this technology can't be used for the production of silicon single-crystal at present.
China has become the big manufacture of solar cells of the first in the world state, but is not solar cell power, and the research and development of accelerating high-purity technology such as production such as fine graphite such as static pressure such as grade have become the task of top priority.Present high-purity static pressure fine graphite technology of preparing that waits is one of factor of China's photovoltaic development.So seek the work-ing life of a kind of both reliable, easy to operate, economical and practical prolongation graphite piece.To avoid and to overcome in the monocrystalline silicon production process damage and crack because of graphite piece many shortcomings such as cause that single crystal growing can't be carried out.Make China's photovoltaic industry health, fast development, for China's clean energy development contributes.This scheme or imagination also meet the requirement of conservation-minded society simultaneously.
The utility model content
The utility model is exactly in order to address the above problem, overcome the problem of " R " portion loss of plumbago crucible three lobe interfaces, avoided in process of production the plumbago crucible cracking and made single crystal growing stop the problem of phenomenon, a kind of czochralski crystal growing furnace plumbago crucible is provided.This utility model is applicable to the manufacturing of vertical pulling silicon single crystal rod.
The technical problem of the required solution of the utility model can be achieved through the following technical solutions:
A kind of czochralski crystal growing furnace plumbago crucible, comprise the plumbago crucible body, described plumbago crucible body comprises three lobe blocks, the bend of the interface of three lobe blocks of plumbago crucible inwall is " R " portion, it is characterized in that: the position that described plumbago crucible inner body wall is positioned at interface " R " portion of three lobe blocks is coated with graphite paper.
The area of the graphite paper of described plumbago crucible inner body wall is greater than the area of " R " portion.
The thickness of the graphite paper of described plumbago crucible inner body wall is 0.3-0.5mm.The thickness of graphite paper is subjected to the influence of the factors such as intensity of production technology, technology, graphite paper, and the thickness of general graphite paper is 0.3-0.5mm.Thickness is low excessively, and the quality of graphite paper can not be guaranteed; As thicker because of its thickness greater than 0.5mm, at high temperature easily softening because of quartz, so can cause graphite paper and quartz crucible contact position gross distortion, be unfavorable for single crystal growing.
The graphite paper of described plumbago crucible inner body wall is cut into rectangle.
The thickness of described graphite paper is 0.3-0.5mm, according to the size of plumbago crucible specification, is cut into the rectangular bars of certain specification, places three " R " portions of plumbago crucible interface then respectively.
The size of described rectangle graphite paper specification is decided according to the plumbago crucible specification, and the specification of plumbago crucible is meant the physical dimension of the quartz crucible that is used to support.
18 " plumbago crucible, the graphite paper that it uses wide are 25-45mm, longly are 100-250mm, and 18 " plumbago crucible is used to support 18 inches quartz crucible.
20 " plumbago crucible, the graphite paper that it uses wide are 30-50mm, longly are 100-250mm, and 20 " plumbago crucible is used to support 20 inches quartz crucible.
Graphite paper does not have the effect of isolating the high quartz crucible less than above-mentioned length and width, is higher than above-mentioned length and width, and area is excessive, causes waste, blocks the slit between plumbago crucible and the quartz crucible, is unfavorable for expanding with heat and contract with cold.
The area of described graphite paper and the size of plumbago crucible are complementary, and along with the increase of plumbago crucible specification, the length and width of the graphite paper of its liner is also done corresponding increase.
The beneficial effects of the utility model:
1, the utility model is to cover graphite paper by three lobe crucible " R " portions in plumbago crucible, make between three lobe crucible " R " portion's interface quartz crucibles and the plumbago crucible directly contact, thereby reduce or avoid between quartz crucible and the three lobe crucibles at high temperature reaction.Can prolong the work-ing life of three lobe crucibles more than 20% by using technique scheme;
2, can increase silicon single crystal output more than 2% simultaneously, three lobe crucibles cracking makes single crystal growing stop the generation of phenomenon because of having avoided in process of production;
3, can improve conveniently existing three lobe pots, save the cost of purchasing new three lobe pots.
The utlity model has advantage simple to operate, easy to use, with low cost.
Description of drawings
Further specify the utility model below in conjunction with the drawings and specific embodiments.
Fig. 1 is the plumbago crucible schematic top plan view.
Fig. 2 is the utility model structural representation.
Drawing explanation: 1 block, 2 interfaces, 3 " R " portion, 4 graphite papers.
Embodiment
In order to make technique means of the present utility model, creation characteristic, to reach purpose and effect is easy to understand,, further set forth the utility model below in conjunction with concrete diagram.
As shown in Figure 1, a kind of czochralski crystal growing furnace plumbago crucible comprises the plumbago crucible body, described plumbago crucible body comprises that three lobe blocks, 1, three lobe block 1 couples together at interface 2, forms the plumbago crucible body, the plumbago crucible body according to existing technology, does not launch to introduce at this.
As shown in Figure 2, the bend of the interface 2 of three lobe blocks 1 of plumbago crucible inwall is " R " portion 3.Described graphite paper 4 is covered in the position of three lobe interface " R " portions 3.
The thickness of described graphite paper 4 is 0.3-0.5mm, is cut into the rectangular bars of certain specification, and the size of described rectangle graphite paper 4 specifications is decided according to the plumbago crucible specification.18 " plumbago crucible, its graphite paper that uses 4 is wide to be 25-45mm, longly is 100-250mm; Place three " R " portions of plumbago crucible then respectively, graphite paper 4 plays the effect of liner quartz crucible, 18, and " plumbago crucible is used to support 18 inches quartz crucible.
As shown in Figure 1, a kind of czochralski crystal growing furnace plumbago crucible comprises the plumbago crucible body, described plumbago crucible body comprises that three lobe blocks, 1, three lobe block 1 couples together at interface 2, forms the plumbago crucible body, the plumbago crucible body according to existing technology, does not launch to introduce at this.
As shown in Figure 2, the bend of the interface 2 of three lobe blocks 1 of plumbago crucible inwall is " R " portion 3.Described graphite paper 4 is covered in the position of three lobe interface " R " portions 3.
The thickness of described graphite paper 4 is 0.3-0.5mm, is cut into the rectangular bars of certain specification, and the size of described rectangle graphite paper 4 specifications is decided according to the plumbago crucible specification.20 " plumbago crucible, its graphite paper that uses 4 is wide to be 30-50mm, longly is 100-250mm; Place three " R " portions of plumbago crucible then respectively, graphite paper 4 plays the effect of liner quartz crucible, 20, and " plumbago crucible is used to support 20 inches quartz crucible.
Existing plumbago crucible at high temperature because quartz crucible softening, in the suffered power maximum of plumbago crucible " R " portion 3, thereby makes quartz crucible closely contact with plumbago crucible.The interface 2 of plumbago crucible three lobe blocks 1 is because of there is certain clearance in itself, so easily cause the oxidation of this place's graphite to accelerate, makes this locate rapid attenuate, causes the plumbago crucible strength degradation and ftractures.
The utility model as shown in Figure 2, position liner graphite paper in interface " R " portion, that is after three interfaces " R " portion 3 of plumbago crucible respectively is coated with a graphite paper 4, owing to avoided contacting with the direct of plumbago crucible at this place's quartz crucible, thereby slowed down the oxidation of this place's graphite, avoid and alleviated the attenuate of this place's graphite, thereby prolonged the work-ing life of plumbago crucible.Described graphite paper 4 is covered in the position of three lobe interface " R " portions 3.
The also available graphite phenol-formaldehyde binders of described graphite paper 4 is bonded in the position of three lobe interface " R " portions 3.If bonding, caking agent at high temperature, and is volatile, causes the contamination of melt etc., so be not suitable for the czochralski silicon monocrystal growth.Described graphite paper 4 coverings or liner are preferable in the position of three lobe interface " R " portions 3.
More than show and described ultimate principle of the present utility model, principal character and advantage of the present utility model.The technician of the industry should understand; the utility model is not restricted to the described embodiments; that describes in the foregoing description and the specification sheets just illustrates principle of the present utility model; the utility model also has various changes and modifications under the prerequisite that does not break away from the utility model spirit and scope, and these changes and improvements all fall in claimed the utility model scope.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (6)
1, a kind of czochralski crystal growing furnace plumbago crucible, comprise the plumbago crucible body, described plumbago crucible body comprises three lobe blocks, the bend of the interface of three lobe blocks of plumbago crucible inwall is " R " portion, it is characterized in that: the position that described plumbago crucible inner body wall is positioned at interface " R " portion of three lobe blocks is coated with graphite paper.
2, czochralski crystal growing furnace plumbago crucible according to claim 1 is characterized in that: the area of the graphite paper of described plumbago crucible inner body wall is greater than the area of " R " portion of interface.
3, czochralski crystal growing furnace plumbago crucible according to claim 2 is characterized in that: the thickness of the graphite paper of described plumbago crucible inner body wall is 0.3-0.5mm.
4, czochralski crystal growing furnace plumbago crucible according to claim 2, it is characterized in that: the graphite paper of described plumbago crucible inner body wall is cut into rectangle.
5, czochralski crystal growing furnace plumbago crucible according to claim 4 is characterized in that: the wide of the graphite paper of described plumbago crucible inner body wall is 25-45mm, and long is 100-250mm.
6, czochralski crystal growing furnace plumbago crucible according to claim 4 is characterized in that: the wide of the graphite paper of described plumbago crucible inner body wall is 30-50mm, and long is 100-250mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201560138U CN201317827Y (en) | 2008-11-27 | 2008-11-27 | Plumbago-pot used in czochralski crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201560138U CN201317827Y (en) | 2008-11-27 | 2008-11-27 | Plumbago-pot used in czochralski crystal growing furnace |
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| CN201317827Y true CN201317827Y (en) | 2009-09-30 |
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| CNU2008201560138U Expired - Lifetime CN201317827Y (en) | 2008-11-27 | 2008-11-27 | Plumbago-pot used in czochralski crystal growing furnace |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102115909A (en) * | 2010-10-13 | 2011-07-06 | 浙江舒奇蒙能源科技有限公司 | Single crystal furnace with three-side-wall graphite crucible |
| CN102168301A (en) * | 2011-06-03 | 2011-08-31 | 常州江南电力环境工程有限公司 | Graphite crucible in czochralski single crystal furnace |
| CN105565308A (en) * | 2016-01-20 | 2016-05-11 | 上海景烯新能源材料科技有限公司 | Crucible made from green oil coke and water-soluble adhesive and manufacturing method of crucible |
| CN107227493A (en) * | 2017-07-11 | 2017-10-03 | 江苏星特亮科技有限公司 | A kind of assembly type crucible |
| CN108396374A (en) * | 2018-04-20 | 2018-08-14 | 周俭 | A kind of monocrystalline silica crucible |
| CN109665869A (en) * | 2019-01-29 | 2019-04-23 | 潍坊工商职业学院 | A kind of means of defence of graphite crucible |
-
2008
- 2008-11-27 CN CNU2008201560138U patent/CN201317827Y/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102115909A (en) * | 2010-10-13 | 2011-07-06 | 浙江舒奇蒙能源科技有限公司 | Single crystal furnace with three-side-wall graphite crucible |
| CN102168301A (en) * | 2011-06-03 | 2011-08-31 | 常州江南电力环境工程有限公司 | Graphite crucible in czochralski single crystal furnace |
| CN105565308A (en) * | 2016-01-20 | 2016-05-11 | 上海景烯新能源材料科技有限公司 | Crucible made from green oil coke and water-soluble adhesive and manufacturing method of crucible |
| CN107227493A (en) * | 2017-07-11 | 2017-10-03 | 江苏星特亮科技有限公司 | A kind of assembly type crucible |
| CN107227493B (en) * | 2017-07-11 | 2023-11-24 | 江苏星特亮科技有限公司 | Assembled crucible |
| CN108396374A (en) * | 2018-04-20 | 2018-08-14 | 周俭 | A kind of monocrystalline silica crucible |
| CN109665869A (en) * | 2019-01-29 | 2019-04-23 | 潍坊工商职业学院 | A kind of means of defence of graphite crucible |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI JIUJING ELECTRONIC MATERIAL INC. Effective date: 20130619 Owner name: JIUJING (YA' AN) ELECTRONIC MATERIAL INC. Free format text: FORMER OWNER: SHANGHAI JIUJING ELECTRONIC MATERIAL INC. Effective date: 20130619 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201617 SONGJIANG, SHANGHAI TO: 625100 YA'AN, SICHUAN PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130619 Address after: 625100 Ya'an Industrial Park, Sichuan Patentee after: Nine crystal (Ya'an) Electronic Material Co., Ltd. Patentee after: Shanghai Jiujing Electronic Material Inc. Address before: 201617 Shanghai city Songjiang District Road No. 399 Patentee before: Shanghai Jiujing Electronic Material Inc. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20090930 |