CN201762478U - Coating quartz crucible for polycrystalline silicon ingot casting - Google Patents

Coating quartz crucible for polycrystalline silicon ingot casting Download PDF

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Publication number
CN201762478U
CN201762478U CN2010205056049U CN201020505604U CN201762478U CN 201762478 U CN201762478 U CN 201762478U CN 2010205056049 U CN2010205056049 U CN 2010205056049U CN 201020505604 U CN201020505604 U CN 201020505604U CN 201762478 U CN201762478 U CN 201762478U
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CN
China
Prior art keywords
coating
quartz crucible
ingot casting
polycrystalline silicon
silicon ingot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2010205056049U
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Chinese (zh)
Inventor
池金林
杨业林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGSU HUAER QUARTZ MATERIALS CO., LTD.
Original Assignee
YANGZHOU HUAER PHOTOELECTRON MATERIAL CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to CN2010205056049U priority Critical patent/CN201762478U/en
Application granted granted Critical
Publication of CN201762478U publication Critical patent/CN201762478U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

Abstract

The utility model discloses a coating quartz crucible for polycrystalline silicon ingot casting, comprising a bubble composite layer, a vacuum layer and a coating; the bubble composite layer is arranged on the inner wall of the quartz crucible, the vacuum layer is arranged on the bubble composite layer, and barium hydroxide coating is arranged on the vacuum layer; in the utility model, the coating quartz crucible has high resistance for high temperature and effectively prevents chemical reaction between silicon raw material and quartz material.

Description

A kind of polycrystalline silicon ingot casting coating quartz crucible
Technical field
The utility model relates to the photovoltaic field, is specifically related to the efficient quartz crucible of a kind of solar energy polycrystalline silicon ingot casting.
Background technology
Quartz crucible is one of important devices of sun power ingot casting polycrystalline production.Its quality quality will directly influence the production capacity and the yield of ingot casting polycrystalline furnace, simultaneously the formation of ingot casting polysilicon product dislocation and the electrical properties such as efficiency of conversion of end product solar cell also be had material impact.
Existing ingot casting production of polysilicon technology commonly used is the mode that adopts heat-exchanging method to combine with Bryman process.Adopt quartz crucible to hold polycrystalline silicon raw material, under ingot casting polycrystalline furnace thermal field environment, heat, make the fusion of silicon material, adopt the oriented growth solidification technology to grow again and meet the efficient ingot casting polysilicon that solar cell properties requires.But the chemical reaction between high-temperature molten silicon liquid and the common quartz crucible can corrode the crucible inwall, causes phenomenons such as sticking crucible, demoulding difficulty easily.Not only shortened the work-ing life of crucible, reduced the number of times that use repeats to feed in raw material, reduced production capacity, and the impurity in the quartz material separates out in a large number and enter in the silicon solution, cause the ingot casting polysilicon dislocation that generates serious, reduced the purity of product.
Summary of the invention
The purpose of this utility model is in order to overcome the deficiencies in the prior art, a kind of polycrystalline silicon ingot casting coating quartz crucible that adopts the barium hydroxide coating to be provided.
The technical solution adopted in the utility model is: a kind of polycrystalline silicon ingot casting coating quartz crucible, comprise bubble composite bed, vacuum layer and coating, the inwall of described quartz crucible is provided with the bubble composite bed, and the bubble composite bed is provided with vacuum layer, and vacuum layer is provided with the hydrated barta coating.
As preferably, the thickness of described hydrated barta coating is 10 μ m.
The production process of the utility model product is: high-purity barium hydroxide and deionization high purity water are carried out proportioning, fully stirring makes it even, inner wall of quartz crucible through preheating is evenly sprayed, carry out sintering with baking oven again, form the thick hydrated barta sprayed coating of about 10 μ m at the crucible inwall.After this coated material and the carbon dioxide in air reaction, generate slight cloud-shaped barium carbonate film in the crucible inner wall surface.In the use, barium carbonate film generates silicon acid barium (BaSiO with the quartz material reaction under hot environment 3), it is the cristobalite crystallization that the inner wall of quartz crucible surface forms one deck densification, this crystallizing layer can effectively intercept the chemical reaction between silicon material and the quartz material, avoid the crucible inwall is caused erosion, and can improve the resistance to elevated temperatures of quartz crucible self preferably, increase the service life, reach the effect that repeats repeatedly to feed, improve single quartz crucible and produce ingot casting polycrystalline output.
Beneficial effect: the utility model product has strong resistance to elevated temperatures, can effectively intercept the chemical reaction between silicon raw material and the quartz material.Can effectively prolong the work-ing life of product on the one hand, increase and repeat the number of times that feeds intake, improve the production capacity of single stove, this product can reduce the pollution of quartz material to the ingot casting polysilicon significantly on the other hand, improves the purity of product, generation of defects such as control dislocation.
Description of drawings
Accompanying drawing is a structural representation of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with the drawings and specific embodiments:
As shown in drawings: a kind of polycrystalline silicon ingot casting coating quartz crucible, comprise bubble composite bed 1, vacuum layer 2 and coating 3, the inwall of described quartz crucible is provided with bubble composite bed 1, bubble composite bed 1 is provided with vacuum layer 2, vacuum layer 2 is provided with hydrated barta coating 3, and the thickness of described hydrated barta coating 3 is 10 μ m.

Claims (2)

1. polycrystalline silicon ingot casting coating quartz crucible, it is characterized in that: comprise bubble composite bed (1), vacuum layer (2) and coating (3), the inwall of described quartz crucible is provided with bubble composite bed (1), bubble composite bed (1) is provided with vacuum layer (2), and vacuum layer (2) is provided with hydrated barta coating (3).
2. a kind of polycrystalline silicon ingot casting coating quartz crucible according to claim 1 is characterized in that: the thickness of described hydrated barta coating (3) is 10 μ m.
CN2010205056049U 2010-08-25 2010-08-25 Coating quartz crucible for polycrystalline silicon ingot casting Expired - Fee Related CN201762478U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010205056049U CN201762478U (en) 2010-08-25 2010-08-25 Coating quartz crucible for polycrystalline silicon ingot casting

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010205056049U CN201762478U (en) 2010-08-25 2010-08-25 Coating quartz crucible for polycrystalline silicon ingot casting

Publications (1)

Publication Number Publication Date
CN201762478U true CN201762478U (en) 2011-03-16

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Family Applications (1)

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Country Status (1)

Country Link
CN (1) CN201762478U (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102858708A (en) * 2011-04-28 2013-01-02 Ftb研究所株式会社 Method for coating quartz crucible for growing silicon crystal, and quartz crucible for growing silicon crystal
CN106801252A (en) * 2016-12-30 2017-06-06 江西中材太阳能新材料有限公司 A kind of quartz ceramic crucible for polycrystalline silicon ingot casting and preparation method thereof
CN107099842A (en) * 2017-05-10 2017-08-29 宁夏协鑫晶体科技发展有限公司 The preparation method of monocrystalline silicon
CN109267148A (en) * 2018-11-29 2019-01-25 内蒙古中环光伏材料有限公司 A kind of process of silica crucible and its multiple coating of silica crucible
CN109355699A (en) * 2018-11-29 2019-02-19 内蒙古中环光伏材料有限公司 A kind of silica crucible and its method for improving silica crucible service life

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102858708A (en) * 2011-04-28 2013-01-02 Ftb研究所株式会社 Method for coating quartz crucible for growing silicon crystal, and quartz crucible for growing silicon crystal
CN102858708B (en) * 2011-04-28 2015-11-25 Ftb研究所株式会社 The coating method of silicon crystalline growth quartz crucible and silicon crystalline growth quartz crucible
US9593432B2 (en) 2011-04-28 2017-03-14 Ftb Research Institute Co., Ltd Coated silica crucible having a bubble-free layer, and method of producing the same
CN106801252A (en) * 2016-12-30 2017-06-06 江西中材太阳能新材料有限公司 A kind of quartz ceramic crucible for polycrystalline silicon ingot casting and preparation method thereof
CN106801252B (en) * 2016-12-30 2019-06-18 江西中材太阳能新材料有限公司 A kind of quartz ceramic crucible for polycrystalline silicon ingot casting and preparation method thereof
CN107099842A (en) * 2017-05-10 2017-08-29 宁夏协鑫晶体科技发展有限公司 The preparation method of monocrystalline silicon
CN109267148A (en) * 2018-11-29 2019-01-25 内蒙古中环光伏材料有限公司 A kind of process of silica crucible and its multiple coating of silica crucible
CN109355699A (en) * 2018-11-29 2019-02-19 内蒙古中环光伏材料有限公司 A kind of silica crucible and its method for improving silica crucible service life

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GR01 Patent grant
C14 Grant of patent or utility model
CP03 Change of name, title or address

Address after: 225600 No. 7 Changjiang Road, Gaoyou Economic Development Zone, Jiangsu, China

Patentee after: Jiangsu Huaer Photoelectric Material Co., Ltd.

Address before: 225600 Industry Park, Gan Zhen Town, Gaoyou, Jiangsu

Patentee before: Yangzhou Huaer Photoelectron Material Co., Ltd.

C56 Change in the name or address of the patentee

Owner name: JIANGSU HUAER OPTO-ELECTRONIC MATERIAL CO., LTD.

Free format text: FORMER NAME: YANGZHOU HUAER POTHOELECTRIC CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: 225600 No. 7 Changjiang Road, Gaoyou Economic Development Zone, Jiangsu, China

Patentee after: JIANGSU HUAER QUARTZ MATERIALS CO., LTD.

Address before: 225600 No. 7 Changjiang Road, Gaoyou Economic Development Zone, Jiangsu, China

Patentee before: Jiangsu Huaer Photoelectric Material Co., Ltd.

C56 Change in the name or address of the patentee

Owner name: JIANGSU HUAER QUARTZ MATERIAL CO., LTD.

Free format text: FORMER NAME: JIANGSU HUAER OPTO-ELECTRONIC MATERIAL CO., LTD.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110316

Termination date: 20150825

EXPY Termination of patent right or utility model