CN205326392U - A quartz crucible coating for producing high pure silicon polycrystal ingot casting - Google Patents
A quartz crucible coating for producing high pure silicon polycrystal ingot casting Download PDFInfo
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- CN205326392U CN205326392U CN201520006346.2U CN201520006346U CN205326392U CN 205326392 U CN205326392 U CN 205326392U CN 201520006346 U CN201520006346 U CN 201520006346U CN 205326392 U CN205326392 U CN 205326392U
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Abstract
The utility model relates to a quartz crucible coating for producing high pure silicon polycrystal ingot casting, add in nitrogenize silicone coating or the silicon nitride a small amount of other not with the mixture coating of the matter component of silicon reaction, the creative adoption curtain coating technology of this coating makes, this coating thickness is 0.2 -5mm, through adding smooth the gluing in the crucible bottom of coating that the curtain coating was prepared to ludox and other vitrified bondings, is used for producing the quartz crucible of high pure silicon polycrystal. This quartz crucible is under fine melt technology, and the few sub - life -span average value of as cast crystal ingot matches with few sub - life -span of ordinary fine melt technology at 5.0 -5.8 mu s that the more ordinary fine melt technology of crystal ingot bottom red sector reduces 5 -15mm, and the crystal ingot can promote 2% -5% in uniform standard underscore, earning ratio, greatly increased ingot casting productivity.
Description
Technical field
The present invention relates to a kind of quartz crucible coating, particularly relate to the coating of a kind of quartz crucible for casting polycrystalline silicon ingot inwall。
Background technology
Polysilicon solar cell is high because of its transformation efficiency and yield, and ingredient requirement is relatively low, is the material that industrialization ratio is the highest。In order to obtain higher photoelectric transformation efficiency, reduce photovoltaic production cost, the requirement of quartz crucible for casting polycrystalline silicon ingot is also more and more higher。
In polycrystalline silicon ingot casting process, impurity in silica crucible can slowly be diffused in silicon ingot, therefore near the crystal of crucible portion owing to pollution and the crystal defect from crucible is more, the position that polysilicon contacts with crucible can form low minority carrier life time region, and crystal mass is poor, lattice, dislocation are on the high side, and minority carrier life time is lower than middle silico briquette, the serious conversion efficiency restricting gained cell piece。It addition, in ingot casting process, can there is following reaction with silicon liquid in silica crucible: SiO2+ Si → 2SiO, if the SiO that reaction generates can not volatilize immediately, then can occur to react SiO+SiO → SiO as follows2+ Si, causes the corrosion to crucible, causes the viscous crucible of large area to split ingot。Currently in order to suppress the reaction of silicon and quartz ceramic crucible, may also operate as conveniently stripped effect simultaneously, general at quartz ceramic crucible inner surface spraying silicon nitride coating in industry。But owing to silicon nitride coating is comparatively loose, therefore still can not stopping that the impurity of crucible body enters molten silicon completely, actual effect is unsatisfactory。
In addition, in order to solve prior art problem, patent publication No. is that CN102826737A discloses a kind of inner surface dip-coating at silica crucible or the method for spraying high purity quartz slip, the method is intended to the impurity intercepting crucible body to the diffusion of silicon ingot, although this method has certain effect but effect is not especially desirable, because the compactness of this coating is poor, is far smaller than the compactness of crucible body, and the quartz particles in this coating is relatively thick, relatively low with the bond strength of crucible body。
Patent publication No. is that CN103422166A discloses one by silica flour and silicon nitride powder mixing, spraying afterwards, brushing or infiltration form intermixture coating in the bottom of silica crucible, and the method is because the quality of ingot casting is also had obvious impact by the anthropic factor such as the quality of coating and coating thickness。
How photovoltaic industry dog-eat-dog, improve the quality of silicon ingot, will not increase again the production cost of silicon ingot simultaneously, silica crucible proposes increasingly stricter requirement。It is intended that study uniform and fine and close quartz crucible coating, it is possible to effectively stop that the silica crucible that impurity spreads to silicon ingot has important practical significance。
Summary of the invention
Technical problem underlying to be solved by this invention has: one, reduces the impurity of quartz crucible surface, reduces in ingot casting process impurity to the diffusion of silicon ingot；Two, improve the uniformity of current silica crucible coated inside, compactness and the degree of being firmly combined with crucible body；Three, improve because of problems such as the factors such as manual operation, the coating layer thickness caused and quality are uncontrollable。
This invention address that technical problem be the technical scheme is that a kind of quartz crucible coating for producing high purity polycrystalline silicon ingot casting, this coating composition is add other mixture not form with the material of pasc reaction a small amount of in silicon nitride or silicon nitride, and described coating is arranged on the inwall of crucible body or/and the interior abutment wall in four sides；
Described silicon nitride coating or silicon nitride add a small amount of other do not prepare with the creationary employing casting molding processes of the mixture coating that the material of pasc reaction forms。Although the casting molding processes about silicon nitride early has research, but does not have the report being applied in the middle of quartz crucible coating at present。
Adding other mixture coating thickness not formed with the material of pasc reaction a small amount of in silicon nitride coating prepared by described casting technique or silicon nitride is 0.2-5mm。
Described silicon nitride coating or silicon nitride add other mixture coating not formed with the material of pasc reaction a small amount of itself and silica crucible body are bondd by high-purity silicasol or polyvinyl alcohol binding agent。
The preparation method of described quartz-ceramics coating, comprises the following steps:
Step one: adopt casting molding processes to prepare and match with crucible bottom size and add other mixture curtain coating cloth not formed with the material of pasc reaction a small amount of in silicon nitride that thickness is 0.2-5mm or silicon nitride；
Step 2: brush Ludox or polyvinyl alcohol vitrified bonding at silica crucible inner bottom, bond silicon nitride or silicon nitride add other mixture curtain coating cloth not formed with the material of pasc reaction a small amount of with crucible body, fixing, obtain the quartz ceramic crucible coating for producing high purity polycrystalline silicon ingot casting。
Step 3: dry 0.5-1.5h at above-mentioned silica crucible is placed in 80-200 DEG C。
The present invention adds other mixture coating not formed a small amount of with the material of pasc reaction by arranging at inner wall of quartz crucible in one layer of silicon nitride coating or silicon nitride, conventional quartz ceramic crucible and the deficiency of the following several respects of conventional coatings are overcome or alleviated by, one, the impurity of silica crucible body is relatively many, impurity is prone in ingot casting to spread, adopt the present invention to arrange in crucible bottom and one layer of silicon nitride coating or silicon nitride add other mixture coating not formed with the material of pasc reaction a small amount of, the purity of silicon nitride > 99.99%, can effectively reduce the diffusion of impurity；Two, conventional quartz crucible coating layer thickness, quality and uniformity etc. are affected by human factors greatly, the present invention adds in silicon nitride coating or silicon nitride a small amount of other not creationary with the mixture coating that the material of pasc reaction forms prepared by casting technique, in coating preparation process, coating layer thickness carries out continuous detecting by X-ray thickness gauge, and the uniformity of coating is good and consistency high；Three, the tradition raw material using glass sand as high-purity coating, the firmness that coating is combined with crucible body is poor, and the heat conductivity of quartz sand is relatively low, the present invention is using silicon nitride as high-purity coating material, silicon nitride thermal conductivity is 1.67-2.09W/ (m.K), far above the thermal conductivity of vitreous silica under identical temperature conditions。This silica crucible is under fine melt technique, the crystal ingot minority carrier life time meansigma methods of casting is at 5.0-5.8 μ s, suitable with common fine melt technique minority carrier life time, bottom crystal ingot, the more common fine melt technique of red sector reduces 5-15mm crystal ingot at unified standard underscore, earning rate can promote 2%-5%, is greatly increased ingot casting production capacity。
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described。
In the illustrated inner bottom of Fig. 1 and four sides, abutment wall is provided with the schematic diagram of quartz crucible coating；Wherein, 1-crucible body, 2-inside coating
Detailed description of the invention
In order to be further appreciated by the present invention, below in conjunction with embodiment, the preparation method of quartz crucible coating provided by the invention being described, protection scope of the present invention is not limited by the following examples。
Embodiment 1
Being 99.99% by purity, silicon nitride part powder that D50 is 1.5 μm is configured to slurry, prepares, by casting molding processes, the silicon nitride curtain coating cloth that thickness is 5mm；Crucible bottom uniformly being brushed the mixed sol solution of one layer of Ludox and polyvinyl alcohol, wherein Ludox: polyvinyl alcohol=5:1, the concentration of polyvinyl alcohol is 6wt%, slowly silicon nitride curtain coating cloth is pasted onto crucible bottom；Crucible is placed at 80 DEG C and dries 1.5h, obtain the silica crucible for producing high purity polycrystalline silicon。
Embodiment 2
Being 99.99% by purity, silicon nitride part powder that D50 is 2 μm is configured to slurry, prepares, by casting molding processes, the silicon nitride curtain coating cloth that thickness is 3mm；Crucible bottom is uniformly brushed the mixed sol solution of two-layer Ludox and vitrified bonding, wherein Ludox: vitrified bonding=20:1, slowly silicon nitride curtain coating cloth is pasted onto crucible bottom；Crucible is placed at 120 DEG C and dries 1h, obtain the silica crucible for producing high purity polycrystalline silicon。
Embodiment 3
Being 99.99% by purity, silicon nitride part powder that D50 is 2.5 μm is configured to slurry, prepares, by casting molding processes, the silicon nitride curtain coating cloth that thickness is 2mm；Crucible bottom is uniformly brushed the mixed sol solution of two-layer Ludox and vitrified bonding, wherein Ludox: vitrified bonding=20:1, slowly silicon nitride curtain coating cloth is pasted onto crucible bottom；Crucible is placed at 150 DEG C and dries 1h, obtain the silica crucible for producing high purity polycrystalline silicon。
Embodiment 4
Being 99.99% by purity, silicon nitride part powder that D50 is 3 μm is configured to slurry, prepares, by casting molding processes, the silicon nitride curtain coating cloth that thickness is 0.2mm；Crucible bottom is uniformly brushed the mixed sol solution of two-layer Ludox and vitrified bonding, wherein Ludox: vitrified bonding=20:1, slowly silicon nitride curtain coating cloth is pasted onto crucible bottom；Crucible is placed at 200 DEG C and dries 0.5h, obtain the silica crucible for producing high purity polycrystalline silicon。
Claims (4)
1. one kind for producing the quartz crucible coating of high purity polycrystalline silicon ingot casting, it is characterised in that this coating composition is silicon nitride, and described silicon nitride coating is arranged on the inner bottom of crucible body or/and abutment wall in four sides。
2. the quartz crucible coating for producing high purity polycrystalline silicon ingot casting according to claim 1, it is characterised in that described silicon nitride coating is prepared by casting molding processes。
3. the quartz crucible coating for producing high purity polycrystalline silicon ingot casting according to claim 2, it is characterised in that described silicon nitride coating thickness is 0.2-5mm。
4. the quartz crucible coating for producing high purity polycrystalline silicon ingot casting described in claim any one of claim 1-3, it is characterised in that the silicon nitride coating prepared by casting technique by high-purity silicasol or polyvinyl alcohol binding agent is bondd with silica crucible body。
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| CN201520006346.2U CN205326392U (en) | 2015-01-06 | 2015-01-06 | A quartz crucible coating for producing high pure silicon polycrystal ingot casting |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105818485A (en) * | 2015-01-06 | 2016-08-03 | 常熟华融太阳能新型材料有限公司 | Quartz crucible coating used for polycrystalline silicon ingot and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105818485A (en) * | 2015-01-06 | 2016-08-03 | 常熟华融太阳能新型材料有限公司 | Quartz crucible coating used for polycrystalline silicon ingot and preparation method thereof |
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