CN204022994U

CN204022994U - The crucible of efficient polycrystal silicon ingot for casting

Info

Publication number: CN204022994U
Application number: CN201420404745.XU
Authority: CN
Inventors: 谢建伟
Original assignee: CHANGZHOU KUANGDA SUNSHINE ENERGY Co Ltd
Current assignee: CHANGZHOU KUANGDA SUNSHINE ENERGY Co Ltd
Priority date: 2014-07-21
Filing date: 2014-07-21
Publication date: 2014-12-17
Anticipated expiration: 2024-07-21

Abstract

The utility model relates to a kind of crucible of casting with efficient polycrystal silicon ingot, comprise crucible body, inwall surrounding at crucible body arranges respectively silicon nitride barrier layer and quartz or silicon carbide forming core layer, silicon nitride barrier layer is positioned at the inner side of quartz or silicon carbide forming core layer, the thickness of silicon nitride barrier layer is between 100 μ m～300 μ m, and the thickness of silicon carbide forming core layer is between 20 μ m～200um.The beneficial effects of the utility model are: from final result of use, by using this crucible, can not rely on casting ingot process and obtain efficient silicon ingot, efficiency of conversion can reach partly melts method silicon ingot, silicon material utilization ratio can reach melts method silicon ingot entirely, has improved efficiency of conversion and has improved silicon material utilization ratio simultaneously.Meanwhile, the small crystal region that the induction of crucible side coating forms can absorb a large amount of metallic impurity that diffuse out from quartz crucible, alleviates edge silico briquette EL black surround phenomenon.

Description

The crucible of efficient polycrystal silicon ingot for casting

Technical field

The utility model relates to photovoltaic industry polycrystalline cast ingot technical field, particularly a kind of crucible of casting with efficient polycrystal silicon ingot.

Background technology

In sun power ingot casting set-up procedure, need to be on quartz crucible even spraying silicon nitride coating, silicon material and quartz crucible are intercepted, one of object is that the impurity reducing in quartz crucible spreads in silicon material, two of object is in ingot casting process of cooling, to help quartz crucible separated with silicon ingot, avoids producing sticky pot, splits the unfavorable conditions such as ingot.

Traditional quartz crucible coating only has one deck silicon nitride coating, can play iris action, but the non-infiltration due to silicon nitride and silicon liquid, need to cross high supercooling degree ability forming core, thereby cause a large amount of crystallites and dislocation defects to produce, silicon crystal defect in process of growth is difficult to control, and finally causes efficiency of conversion not high.Also have people on silicon nitride coating, to spray one deck silica flour, but because silica flour easily melts, be difficult to control in technique, efficient silicon ingot efficiency is unstable.

Utility model content

Technical problem to be solved in the utility model is: the quartz crucible that traditional ingot casting is used lacks the silicon liquid formation nucleus condition that is beneficial to, must reach enough condensate depression, silicon liquid just can form nucleus in a large number, cause interface to produce the lattice defects such as a large amount of crystallites and dislocation, be difficult to produce the silicon ingot of high conversion efficiency.

The utility model solves the technical scheme that its technical problem adopts: a kind of crucible of casting with efficient polycrystal silicon ingot, comprise crucible body, inwall surrounding at crucible body arranges respectively silicon nitride barrier layer and quartz or silicon carbide forming core layer, silicon nitride barrier layer is positioned at the inner side of quartz or silicon carbide forming core layer, the thickness of silicon nitride barrier layer is between 100 μ m～300 μ m, and the thickness of quartz or silicon carbide forming core layer is between 20 μ m～200um.

For guaranteeing the density of coating and the performance that do not come off, further limit, silicon nitride barrier layer is attached on crucible body by the mode of brushing, and quartz or silicon carbide forming core layer are attached on silicon nitride barrier layer by the mode of spraying.

Further spacing, the particle diameter of the silicon nitride particle of silicon nitride barrier layer is 1 μ m-3 μ m, and quartz or the quartz of silicon carbide forming core layer or the particle diameter of silicon-carbide particle are 10 μ m-200 μ m.

The beneficial effects of the utility model are:

From final result of use, by using this crucible, can not rely on casting ingot process and obtain efficient silicon ingot, efficiency of conversion can reach partly melts method silicon ingot, and silicon material utilization ratio can reach melts method silicon ingot entirely, has improved efficiency of conversion and has improved silicon material utilization ratio simultaneously, improve benefit, reduced cost.Meanwhile, the small crystal region that the induction of crucible side coating forms can absorb a large amount of metallic impurity that diffuse out from quartz crucible, alleviates edge silico briquette EL black surround phenomenon;

From coating structure, this crucible has duplex coating, adopts and brushes and spraying combination, and coating is in conjunction with firm difficult drop-off, and forming core layer is attached on barrier layer reliably.

Accompanying drawing explanation

Fig. 1 structural representation of the present utility model;

In figure: 1. crucible body, 2. silicon nitride barrier layer, 3. quartz or silicon carbide forming core layer.

Embodiment

As shown in Figure 1, a kind of crucible of casting with efficient polycrystal silicon ingot, can supplement production high conversion efficiency silicon ingot, comprise crucible body 1, inwall surrounding at crucible body 1 arranges respectively silicon nitride barrier layer 2 and quartz or silicon carbide forming core layer 3, silicon nitride barrier layer 2 is positioned at the inner side of quartz or silicon carbide forming core layer 3, and the thickness of silicon nitride barrier layer 2 is between 100 μ m～300 μ m, and the thickness of quartz or silicon carbide forming core layer 3 is between 20 μ m～200um.

Silicon nitride barrier layer 2 main components are silicon nitride, the particle diameter 1 μ m～3 μ m of silicon nitride particle, in order to improve degree of adhesion and the firm degree of silicon nitride particle layer, when configuration Silicon Nitride, add 5～10 parts of polyvinyl alcohol and 5～10 parts of silicon sol solutions, two kinds of materials all have good space steric effect, guaranteed the dispersion effect of silicon nitride powder, and good film-forming properties, and make coating adhesion effect good, do not come off.For ensureing silicon nitride coating density, adopt and brush and non-spraying, coat-thickness is controlled at 100 μ m～300 μ m, and the coat-thickness of appropriate design is guaranteed the density of coating.

The main component of quartz or silicon carbide forming core layer 3 is high-purity ground quartz or high-pure SiC power, and purity > 99.9%, and grain diameter should be controlled at 10 μ m～200 μ m.Because the lattice parameter of silica powder or carborundum powder and silicon liquid approaches, wetting property is good, and silicon wafer core is easily separated out and is evenly long brilliant on this basis, and not fusing thereupon in silicon material high temperature melting process.In order to guarantee this layer firmly degree and forming core effect, should adopt spraying but not brushing, when configuration slurry, add 5-10 part polyvinyl alcohol and 5-10 part silicon sol solution, coat-thickness is controlled at 20-200 μ m, and the coat-thickness of appropriate design guarantees that coating does not come off.

Claims

1. a crucible of casting with efficient polycrystal silicon ingot, comprise crucible body (1), it is characterized in that: the inwall surrounding at crucible body (1) arranges respectively silicon nitride barrier layer (2) and quartz or silicon carbide forming core layer (3), silicon nitride barrier layer (2) is positioned at the inner side of quartz or silicon carbide forming core layer (3), the thickness of silicon nitride barrier layer (2) is between 100 μ m～300 μ m, and the thickness of quartz or silicon carbide forming core layer (3) is between 20 μ m～200um.

2. the crucible of efficient polycrystal silicon ingot for casting according to claim 1, it is characterized in that: it is upper that described silicon nitride barrier layer (2) is attached to crucible body (1) by the mode of brushing, and quartz or silicon carbide forming core layer (3) are attached on silicon nitride barrier layer (2) by the mode of spraying.

3. the crucible of efficient polycrystal silicon ingot for casting according to claim 1, it is characterized in that: the particle diameter of the silicon nitride particle of described silicon nitride barrier layer (2) is 1 μ m-3 μ m, quartz or the quartz of silicon carbide forming core layer (3) or the particle diameter of silicon-carbide particle are 10 μ m-200 μ m.