CN105568374A - Selective all-melting high-efficiency crucible for polycrystal cast ingots - Google Patents
Selective all-melting high-efficiency crucible for polycrystal cast ingots Download PDFInfo
- Publication number
- CN105568374A CN105568374A CN201610148658.6A CN201610148658A CN105568374A CN 105568374 A CN105568374 A CN 105568374A CN 201610148658 A CN201610148658 A CN 201610148658A CN 105568374 A CN105568374 A CN 105568374A
- Authority
- CN
- China
- Prior art keywords
- crucible
- silicon
- forming core
- edge
- cast ingot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention relates to a special high-efficiency crucible. Specifically, the method is as follows: silicon particles or a silicon-corresponding silicon compound mixture are/is fully distributed on the edge of the bottom of a polycrystal crucible as a nucleation substance, and the middle part of the bottom of the crucible is not subjected to any treatment. The method can prevent the problem of poor edge nucleation caused by edge seed crystal melting, and ensures the edge of the bottom to achieve the goal of homogeneous nucleation by the semi-melting technique for polycrystal cast ingots. The introduction of impurities and the low-efficiency rate of the crystal ingot edge can be obviously lowered; the photoelectric conversion efficiency of the whole crystal ingot is enhanced by 0.05-0.10%; and the cost for manufacturing the bottom coating of the high-efficiency crucible can be lowered by 50-80%.
Description
Technical field
The present invention relates to a kind of special polycrystalline cast ingot crucible, particularly relate to polycrystalline cast ingot half process of smelting and use.
Background technology
Within 2011, rise, silicon chip efficiency experienced by the important R&D directions such as large grain size, class monocrystalline, high-efficiency polycrystalline.Few crystal boundary pursued by class monocrystalline, and inevitable highdensity dislocation multiplication, although high-efficiency polycrystalline has very high grain boundary density, but dislocation desity shows very low.Due to low dislocation, high efficiency advantage, high-efficiency polycrystalline became the main flow of the market requirement gradually from 2012.In order to obtain less crystal grain, ubiquity fine melt and the large technique of fritting two in the industry, because half process of smelting is homogeneity forming core, uniform crystal particles, efficiency is a little more than fine melt, and in current industry, majority uses half process of smelting.But half process of smelting also exists the difficult problem that edge seed crystal is difficult to save from damage, crystal ingot edge efficiency is made to be starkly lower than center efficiency.Insider stops thermal radiation to reach by modes such as carbon felt parcels and retains seed crystal object bottom sheeting edge or DS edge, heat-insulation cage, effective to a certain extent, but other impurity such as carbon increases thereupon.Crucible bottom makes coating and prevents the too much introducing of impurity significant.
The patent No. is that 201510576727.9 Chinese patent application relate to a kind of polycrystalline silicon ingot casting grate-layer material and its preparation method and application.Polycrystalline silicon ingot casting grate-layer material is the high temperature resistant silicon particle of silicon grain surface-coated silicon nitride layer, and its particle diameter is 3 ~ 15mm, silicon grain: the mass ratio of silicon nitride is 40: 1 ~ 5.Preparation method comprises the following steps: in silicon grain, add the silicon nitride powder of 5% ~ 15% and stir; Add the mixing solutions of 0.4% ~ 12% silicon sol and pure water again, again fully stir, the mass ratio of silicon sol and pure water is 1: 1 ~ 5; After oven dry, particulate matter is rubbed with the hands and open and cross screen cloth.Above-mentioned high temperature resistant silicon particle is applied in polysilicon fritting casting ingot process, after entering long crystalline substance, plays good forming core effect.Because of advantages such as bottom silicon ingot, seed crystal Bock Altitude are low, and red sector is smooth, compare traditional half process of smelting, crystal forming rate can improve 4% ~ 6%, A, B, C tri-district's photoelectric transformation efficiency reach unanimity, thus Total Product quality is got a promotion.
Summary of the invention
In order to overcome deficiency of the prior art, the invention provides a kind of polycrystalline cast ingot selectivity fine melt high efficient crucible, the technical solution used in the present invention is as follows:
A kind of polycrystalline cast ingot selectivity fine melt high efficient crucible, be provided with forming core thing at crucible bottom edge, crucible bottom middle portion does not spread forming core thing.In the present invention, the concept of indication forming core thing is: described forming core thing is one or more in silicon material, the compound of silicon or the compound of silicon and silicon.
Described forming core thing is of a size of 3 μm-500 μm.
In addition, present invention also offers a kind of manufacture method of polycrystalline cast ingot selectivity fine melt high efficient crucible, comprise the following steps:
Step one: dividing plate is placed on crucible bottom mid-way, dividing plate distance crucible edge 2-14cm;
Step 2: lay forming core thing at crucible bottom edge;
Step 3: remove dividing plate.
Described forming core thing is one or more in silicon material, the compound of silicon or the compound of silicon and silicon;
Described forming core thing can spread with hand, machine cloth sand or spraying method cloth is at crucible bottom edge;
Described forming core thing before laying with the colloid brushing of viscosity or be sprayed on crucible bottom, colloid adopt high purity quartz slip, silicon sol or other one or more in colloid of quality influence are not caused to ingot casting;
Described dividing plate adopts high-purity plastic material material or other material that can not impact polycrystalline cast ingot;
Described partition shape is circular, square or non-regular shape.
Know-why of the present invention is: by laying forming core thing in crucible bottom edge, can stop because edge seed crystal melts the problem causing edge forming core poor, ensures that polycrystalline cast ingot half process of smelting lower bottom part edge reaches homogeneity forming core.
Advantageous Effects of the present invention is: after going out ingot with crucible ingot casting provided by the present invention, bottom product, crystalline substance spends more than 90% for high-quality crystal grain, 100% high-quality crystal grain can be reached under optimum condition, the average efficiency of conversion of crystal ingot promotes more than 0.02%, can to 0.11% under optimum condition, crystal ingot edge efficiency is significantly improved, whole ingot photoelectric transformation efficiency promotes 0.05-0.10%; Adopt crucible manufacturing provided by the present invention, have easy and simple to handle, not easily introduce impurity, make the cost of high efficient crucible base coat and can to decline the advantage of 50-80%, have good industrialization prospect.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 finished product crucible vertical view (schematic diagram one)
Fig. 2 finished product crucible vertical view (schematic diagram two).
Embodiment
In order to understand the present invention further, be described quartz crucible provided by the invention below in conjunction with example, protection scope of the present invention is not limited by the following examples.
Embodiment 1
First, circular bulkheads is placed on crucible bottom mid-way, dividing plate the widest part is from crucible four inwall 4cm; Then, by forming core thing cloth at crucible bottom edge; Finally, remove dividing plate, as shown in Figure 1, wherein shaded side is for being provided with forming core thing for crucible finished product schematic diagram.
After adopting above-mentioned crucible ingot casting to go out ingot, bottom crystalline substance spends 96% for high-quality crystal grain, and the average efficiency of conversion of crystal ingot promotes 0.03%.
Embodiment 2
As different from Example 1, dividing plate the widest part is from crucible four inwall 12cm, and after going out ingot, bottom crystalline substance spends 100% for high-quality crystal grain, and the average efficiency of conversion of crystal ingot promotes 0.11%.
Embodiment 3
As different from Example 1, dividing plate the widest part is from crucible four inwall 5cm, and after going out ingot, bottom crystalline substance spends 95% for high-quality crystal grain, and the average efficiency of conversion of crystal ingot promotes 0.03%.
Embodiment 4
As different from Example 1, central dividing plate squarely, dividing plate the widest part is from crucible 4 inwall 8cm, and after going out ingot, bottom crystalline substance spends 100% for high-quality crystal grain.
Embodiment 5
As different from Example 1, after being mixed according to quality 3:1 with silicon nitride powder by silica flour, cloth is at crucible edge, and central dividing plate squarely, dividing plate the widest part is from crucible 4 inwall 8cm, and as shown in Figure 2, wherein shaded side is for being provided with forming core thing for crucible finished product schematic diagram.
After going out ingot, bottom crystalline substance spends 100% for high-quality crystal grain, and the average efficiency of conversion of crystal ingot promotes 0.06%.
Embodiment 6
As different from Example 1, after being mixed according to quality 3:1 with silicon nitride powder by silica flour, cloth is at crucible edge, and central dividing plate is circular, and dividing plate the widest part is from crucible 4 inwall 3cm, and after going out ingot, bottom crystalline substance spends 95% for high-quality crystal grain, and the average efficiency of conversion of crystal ingot promotes 0.02%.
Embodiment 7
As different from Example 1, after being mixed according to quality 3:1 with silicon nitride powder by silica flour, cloth is at crucible edge, central dividing plate squarely, and dividing plate the widest part is from crucible 4 inwall 10cm, after going out ingot, bottom crystalline substance spends 100% for high-quality crystal grain, and the average efficiency of conversion of crystal ingot promotes 0.05%.
Embodiment 8
As different from Example 1, after being mixed according to quality 4:1 with carborundum powder by silica flour, cloth is at crucible edge, and central dividing plate is circular, and dividing plate the widest part is from crucible 4 inwall 10cm, after going out ingot, bottom crystalline substance spends 90% for high-quality crystal grain, and the average efficiency of conversion of crystal ingot maintains an equal level with product line.
Embodiment 9
As different from Example 1, by 50g carborundum powder (70-100 order), cloth is at crucible edge, and central dividing plate is circular, and dividing plate the widest part is from crucible 4 inwall 8cm, and after going out ingot, bottom crystalline substance spends 90% for high-quality crystal grain, and the average efficiency of conversion of crystal ingot maintains an equal level with product line.
Embodiment 10
As different from Example 1, by 50g quartz sand (70-100 order), cloth is at crucible edge, and central dividing plate is circular, and dividing plate the widest part is from crucible 4 inwall 8cm, and after going out ingot, bottom crystalline substance spends 90% for high-quality crystal grain, and the average efficiency of conversion of crystal ingot promotes 0.02%.
Claims (9)
1. a polycrystalline cast ingot selectivity fine melt high efficient crucible, is characterized in that being provided with forming core thing at crucible bottom edge.
2. a kind of polycrystalline cast ingot selectivity fine melt high efficient crucible according to claim 1, is characterized in that described forming core thing is one or more in silicon material, the compound of silicon or the compound of silicon and silicon.
3. polycrystalline half process of smelting high efficient crucible according to claim 1, is characterized in that forming core thing size is at 3 μm-500 μm, and the weight of laying forming core thing is 30-200g.
4. a manufacture method for a kind of polycrystalline cast ingot selectivity fine melt high efficient crucible as claimed in claim 1, comprises the following steps:
Step one: dividing plate is placed on crucible bottom mid-way, dividing plate distance crucible edge 2-14cm;
Step 2: lay forming core thing at crucible bottom edge;
Step 3: remove dividing plate.
5. the manufacture method of a kind of polycrystalline cast ingot selectivity fine melt high efficient crucible according to claim 4, is characterized in that described forming core thing is one or more in silicon material, the compound of silicon or the compound of silicon and silicon.
6. the manufacture method of a kind of polycrystalline cast ingot selectivity fine melt high efficient crucible according to claim 4, is characterized in that described forming core thing can spread with hand, machine cloth sand or spraying method cloth is at crucible edge.
7. the manufacture method of a kind of polycrystalline cast ingot selectivity fine melt high efficient crucible according to claim 4 or 5, it is characterized in that described forming core thing with the colloid brushing of viscosity or be sprayed on crucible bottom before laying, colloid adopt high purity quartz slip, silicon sol or other one or more in colloid of quality influence are not caused to ingot casting.
8. the manufacture method of a kind of polycrystalline cast ingot selectivity fine melt high efficient crucible according to claim 4, is characterized in that described dividing plate adopts high-purity plastic material material or other material that can not impact polycrystalline cast ingot.
9. the manufacture method of a kind of polycrystalline cast ingot selectivity fine melt high efficient crucible according to claim 4, is characterized in that described partition shape is for circular, square or non-regular shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610148658.6A CN105568374A (en) | 2016-03-16 | 2016-03-16 | Selective all-melting high-efficiency crucible for polycrystal cast ingots |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610148658.6A CN105568374A (en) | 2016-03-16 | 2016-03-16 | Selective all-melting high-efficiency crucible for polycrystal cast ingots |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105568374A true CN105568374A (en) | 2016-05-11 |
Family
ID=55878978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610148658.6A Pending CN105568374A (en) | 2016-03-16 | 2016-03-16 | Selective all-melting high-efficiency crucible for polycrystal cast ingots |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105568374A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108179466A (en) * | 2018-02-24 | 2018-06-19 | 常熟华融太阳能新型材料有限公司 | A kind of polycrystalline cast ingot crucible and device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5573451A (en) * | 1978-11-23 | 1980-06-03 | Siemens Ag | Preparation of silicon crystal |
| CN102877129A (en) * | 2012-09-11 | 2013-01-16 | 江西赛维Ldk太阳能高科技有限公司 | Crystalline silicon and preparation method thereof |
| CN103088420A (en) * | 2011-11-28 | 2013-05-08 | 昆山中辰矽晶有限公司 | Silicon crystal ingot and silicon wafer produced therefrom |
| CN103866381A (en) * | 2012-12-13 | 2014-06-18 | 阿特斯(中国)投资有限公司 | Novel directional solidification method for preparing silicon ingots with low dislocation density |
| CN104152989A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding plate and preparation method thereof |
| CN204022994U (en) * | 2014-07-21 | 2014-12-17 | 常州旷达阳光能源有限公司 | The crucible of efficient polycrystal silicon ingot for casting |
| JP2015020941A (en) * | 2013-07-23 | 2015-02-02 | 日本坩堝株式会社 | Container for silicon casting |
-
2016
- 2016-03-16 CN CN201610148658.6A patent/CN105568374A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5573451A (en) * | 1978-11-23 | 1980-06-03 | Siemens Ag | Preparation of silicon crystal |
| CN103088420A (en) * | 2011-11-28 | 2013-05-08 | 昆山中辰矽晶有限公司 | Silicon crystal ingot and silicon wafer produced therefrom |
| CN102877129A (en) * | 2012-09-11 | 2013-01-16 | 江西赛维Ldk太阳能高科技有限公司 | Crystalline silicon and preparation method thereof |
| CN103866381A (en) * | 2012-12-13 | 2014-06-18 | 阿特斯(中国)投资有限公司 | Novel directional solidification method for preparing silicon ingots with low dislocation density |
| JP2015020941A (en) * | 2013-07-23 | 2015-02-02 | 日本坩堝株式会社 | Container for silicon casting |
| CN204022994U (en) * | 2014-07-21 | 2014-12-17 | 常州旷达阳光能源有限公司 | The crucible of efficient polycrystal silicon ingot for casting |
| CN104152989A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding plate and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108179466A (en) * | 2018-02-24 | 2018-06-19 | 常熟华融太阳能新型材料有限公司 | A kind of polycrystalline cast ingot crucible and device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104018219B (en) | A kind of preparation method of narrow black surround high-efficiency polycrystalline silicon chip | |
| CN104328490B (en) | A kind of preparation method of efficient polycrystalline silicon ingot without black surround | |
| CN107573101B (en) | Crucible and preparation method thereof | |
| CN104047048A (en) | Novel ingot casting crucible and manufacturing method thereof | |
| CN103014852B (en) | A kind of method for casting efficient polycrystalline silicon ingot | |
| CN102877129B (en) | A kind of crystalline silicon and preparation method thereof | |
| CN202671713U (en) | Crucible for polycrystalline silicon cast ingots | |
| CN102644108B (en) | A kind of loading method of growing silicon crystals in casting process and the technique of growing silicon crystal | |
| TWM443938U (en) | Solar cell | |
| CN104451870A (en) | Casting method of polycrystalline silicon ingot | |
| Wong et al. | The effect of silica nucleation layers on grain control of multi-crystalline silicon in directional solidification | |
| CN102425008A (en) | Method for preparing large-grain ingot polycrystal silicon | |
| CN104911703A (en) | Polycrystalline silicon ingot silicon nitride coating crucible and coating preparation method | |
| CN105002557A (en) | Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof | |
| CN105568374A (en) | Selective all-melting high-efficiency crucible for polycrystal cast ingots | |
| CN111020696A (en) | Preparation method of efficient crucible with silicon particles as nucleation source | |
| CN203474952U (en) | Quartz crucible for ingot casting | |
| CN102898034A (en) | Preparation method of crucible silicon nitride coating for crystalline silicon cast ingot | |
| CN105063748A (en) | Efficient crucible for polycrystal ingot casting and preparation method of efficient crucible | |
| CN107460544A (en) | Crucible used for polycrystalline silicon ingot casting and preparation method thereof, polycrystal silicon ingot and preparation method thereof | |
| CN205171015U (en) | Crucible for polycrystalline silicon cast ingots | |
| CN105332049A (en) | Preparation method of G6 low-impurity-diffusion low-dislocation-density high-purity efficient crucible | |
| KR101271649B1 (en) | Manufacturing method of high quality multicrystalline silicon ingot using monocrystalline silicon seed | |
| CN107699946A (en) | A kind of polycrystalline cast ingot feature G8 silica crucibles and preparation method thereof | |
| CN203159742U (en) | Efficient crucible for casting polycrystal ingot |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160511 |