CN205171015U - Crucible for polycrystalline silicon cast ingots - Google Patents
Crucible for polycrystalline silicon cast ingots Download PDFInfo
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- CN205171015U CN205171015U CN201520977445.5U CN201520977445U CN205171015U CN 205171015 U CN205171015 U CN 205171015U CN 201520977445 U CN201520977445 U CN 201520977445U CN 205171015 U CN205171015 U CN 205171015U
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- crucible
- polycrystalline silicon
- silicon ingot
- groove
- ingot casting
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Abstract
The utility model discloses a crucible for polycrystalline silicon cast ingots, have be planar bottom surface and with bottom surface vertically lateral wall, furthermore, the border department that combines on the bottom surface in the crucible, with the lateral wall recess for being circumference and setting up, its cross sectional shape of recess is the arc that links up. The utility model discloses an above -mentioned arc recess utilizes the effect of silicon liquid gravity and inertia, makes silicon liquid enter into the inside of crucible to the eminence impact under the guide of recess to play from mixing effect, help reducing the temperature gradient on the horizontal direction, thereby obtain the even tiny crystalline grain of size, effectively improved polycrystalline silicon ingot's product quality.
Description
Technical field
The utility model relates to technical field of solar batteries, particularly relates to a kind of crucible used for polycrystalline silicon ingot casting.
Background technology
Sun power as renewable and clean energy resource, have safe and reliable, noiseless, pollution-free, restriction less, failure rate is low, easy maintenance, the resource advantage not available for other conventional energy resourcess such as wide.Monocrystalline silicon battery has the highest solar conversion efficiency, but the production of silicon single crystal is consuming time, power consumption, and cost is relatively high.Polysilicon is easy to accomplish scale production by ingot ways preparation.But become electron-hole deathnium owing to having more crystal boundary, the efficiency of polysilicon is lower than silicon single crystal.For this reason, directional solidification system method (being called for short DSS) the stove crystal technique that the preparation method of current polycrystal silicon ingot mainly adopts GTSolar to provide, by controlling the oriented growth of polysilicon, polysilicon chip is made to have crystal region large as far as possible, to improve battery performance.This technology generally includes heating, melts, solidifies the steps such as long crystalline substance, annealing and cooling, wherein there is following technical problem:
1, existing ingot furnace mainly relies on and promotes heat-insulation cage to reduce bottom temp, but simple lifting heat-insulation cage, orientation helps the rate of heat release of rate of heat release higher than central authorities on grumeleuse four limit, this cooling mode can form the thermograde in horizontal direction, thus have impact on the verticality of silicon ingot crystal grain, finally cause grain-size uneven.
2, solidifying in long brilliant process, along with the lasting cooling of crucible bottom, the random forming core of the spontaneous formation of silicon material of molten state and random forming core grow gradually.But initial forming core can not be well controlled in prior art, easily dislocation is produced in nucleation process, be easy to cause that crystal orientation is irregular, crystal boundary is irregular, crystal grain uneven (from micron order to tens centimetres), have impact on quality product and the efficiency of conversion of polycrystal silicon ingot.
For the problems referred to above, for reducing the thermograde that cooling mode brings, can be had some improvement by stirring or hyperacoustic process in melting process.But existing ingot furnace cannot increase stirring facility, and agitator add the introducing that membership brings impurity; And hyperacoustic process can reach the effect of crystal grain thinning, but this method had both added equipment complexity, also cannot on-line Control ultrasonication, and practical application effect is not good.
For controlling the homogeneous nucleation of silicon crystal, mainly have employed following two kinds of modes at present: one, be provided as nuclear substance, namely first spreading one deck HIGH-PURITY SILICON material as seed crystal in crucible bottom, or prepare one deck forming core active layer.But because existing ingot furnace mainly adopts bell-jar to heat, the temperature around crucible is higher, thus causes the seed crystal of crucible bottom peripheral rim portion first to melt, causes the crystallization of crucible bottom uneven, have impact on crystallization effect.In addition, due in existing ingot casting technology, spraying method has all been adopted to prepare silicon nitride coating, the mode therefore preparing forming core active layer effect bad in actual use.Two, utilize specific shape to cause silicon crystal rule nucleation, namely at quartz crucible bottom even distribution high purity granular, or the bottom in crucible arranges multiple pit, to form ups and downs bottom, realizes the molten silicon in bottom and to fix a point quick Preferential Nucleation.But the crystal grain of Preferential Nucleation is still randomly formed, it promotes that the effect of grain orientation growth is still limited.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, provides a kind of crucible used for polycrystalline silicon ingot casting contributing to reducing horizontal direction thermograde, is beneficial to obtain the tiny crystal grain of size uniform, effectively improves the quality product of polycrystal silicon ingot.
The purpose of this utility model is achieved by the following technical programs:
A kind of crucible used for polycrystalline silicon ingot casting that the utility model provides, has the bottom surface in plane and the sidewall with plane perpendicular; In addition, the edge be combined on the bottom surface in described crucible, with sidewall is the groove arranged in circumference, and its cross-sectional shape of described groove is coherent arc.
In melting process, because existing ingot furnace adopts bell-jar heating, first the silicon material being in top and side wall upper part in crucible can melt.Like this, the liquid-state silicon first melted under gravity, flows from top to bottom along inwall.If the bottom of crucible is plane, then silicon liquid directly collects in the bottom of crucible, can not produce obvious perturbation action.The utility model adopts above-mentioned arc groove, utilize silicon liquid gravity and inertia effect, silicon liquid can be made under the guiding of groove to hoist and to impact and enter into the inside of crucible, thus play from stirring action, contribute to the thermograde in minimizing horizontal direction and produce heat exchange action, realize homogeneous nucleation and decrease fusing time.
In such scheme, be improve the guiding function of groove, be beneficial to the inside that silicon liquid enters into crucible, the cross section of groove described in the utility model is made up of two sections of connected arcs, and the radian of the side arc adjacent with sidewall is more than or equal to the radian of opposite side arc.
Further, the degree of depth of groove described in the utility model is 10 ~ 50mm, width is 20 ~ 100mm; Side its radian of arc that described groove is adjacent with sidewall is 90 °.
Further, the crucible thickness of groove described in the utility model is identical with the crucible thickness at described bottom surface place, makes groove and crucible bottom have identical condensate depression, contributes to homogeneous nucleation.
According to crystal growth theories, the nucleation process of crystal is a process of solidifying-dissolving, and after grain-size exceedes critical size, crystal grain could be grown up formation crystal further.Solidifying in process of growth, for providing more crystal atoms convergence point, to promote the smooth nucleation of crystal grain, and control grain orientation growth better, on the bottom surface described in the utility model and surface of groove is provided with tip shape projection, the central shaft of described tip shape projection and plane perpendicular.
Further, the height of tip shape projection described in the utility model is 1 ~ 5mm, the angle=that sharp corner maximum appearance profile in top is formed 30 °.Described tip shape projection in close-packed arrays, or is regular arrangement.
The utility model has following beneficial effect:
(1) the utility model is simple and reasonable, by the edge be combined on the bottom surface in crucible, with sidewall, arc groove is set, the liquid-state silicon that first top and side wall upper part are melted is under its gravity inertial effect, flow downward along sidewall, and utilize the guiding of arc groove that the impact of silicon liquid is entered in the middle part of crucible.The impact of silicon liquid can produce stirring, thus plays from stirring action, not only contributes to reducing the thermograde in horizontal direction, obtain the crystal grain that size uniform is tiny, and contribute to improving heat exchanging process, the fusing of the inner silicon material of crucible can be promoted, decrease fusing time.
(2) projection arranged bottom the utility model is tip shape and has higher curvature, thus more Rendezvous Point can be provided for the gathering of crystal atoms, contribute to the probability improving crystal grain atomic cohesion, promote that grain-size exceedes critical size and nucleation smoothly.In addition, tip shape is protruding easily forms crystal growth point, thus effectively can avoid the growth at random of crystal grain, reaches the object controlling grain orientation growth.
(3) the utility model arc groove and crucible bottom have identical condensate depression, contribute to forming nucleus simultaneously.And, arc groove and tip shape projection can reduce condensate depression needed for silicon crystal nucleation, contribute to homogeneous nucleation, make in existing casting ingot process, lower temperature is obtained without the need to adopting excessively raising heat-insulation cage, decrease the impact of excessive thermograde on crucible and coating, avoid sticky crucible and the industrial accident such as even to reveal.
(4) the utility model is widely applicable, because crucible bottom peripheral rim portion is that arc groove has relatively low temperature, for the production technique adopting crucible bottom to lay seed crystal, then contribute to keeping this place's seed crystal not dissolved, thus obtain homogeneous nucleation.
Accompanying drawing explanation
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail:
Fig. 1 is the structural representation of a kind of crucible used for polycrystalline silicon ingot casting of the utility model embodiment;
Fig. 2 is one of cross-sectional shape of middle arc groove embodiment illustrated in fig. 1;
Fig. 3 is the cross-sectional shape two of middle arc groove embodiment illustrated in fig. 1;
Fig. 4 is principle schematic embodiment illustrated in fig. 1.
In figure: bottom surface 1, sidewall 2, groove 3, arc 3a, 3b, depth of groove H, recess width W, the radian measure alpha of arc 3a, tip shape projection 4
Embodiment
The embodiment of Fig. 1 ~ Figure 4 shows that a kind of crucible used for polycrystalline silicon ingot casting of the utility model.
As shown in Figure 1, the present embodiment crucible has bottom surface 1 in plane and the sidewall 2 vertical with bottom surface 1.Be be the groove 3 that circumference is arranged, cross-sectional shape is coherent arc on bottom surface 1 in crucible, with the edge that sidewall 2 is combined, its radian measure alpha of arc 3a of the side adjacent with sidewall of groove 3 is 90 °, and its radian of arc 3b of opposite side is less than or equal to 90 ° (see Fig. 2 and Fig. 3); The crucible thickness of groove is identical with the crucible thickness at bottom surface place.On bottom surface 1 in crucible and the surface of groove 3 is provided with tip shape projection 4, and its shape can be triprismo, pyramid or other many prismatics shape, and its central shaft is vertical with bottom surface 1.Tip shape protruding 4 is (or in regular arrangement) in close-packed arrays.
For being suitable for the technique of adding without seed crystal, the depth H of groove 3 is 10mm, width W is 90mm (see Fig. 2), and the shape of tip shape projection 4 is triangular pyramid, is highly 5mm, and the angle that sharp corner maximum appearance profile in top is formed is 20 °.Or, for be suitable for add seed crystal be the technique of nucleus, the depth H of groove 3 is 50mm, width W is 100mm (see Fig. 3), and the shape of tip shape projection 4 is pyramid, be highly 1mm, the angle that sharp corner maximum appearance profile in top is formed is 30 °.
The present embodiment principle of work is as follows:
Existing polycrystalline silicon ingot or purifying furnace adopts bell-jar heating, and first the silicon material on crucible top and sidewall 2 top melts, and as shown in Figure 4, the silicon liquid of thawing under gravity, can flow into arc groove 3 place of crucible bottom from top to bottom along sidewall 2.And the silicon liquid fallen is under action of gravity and inertia effect, to make a spurt higher position along groove 3 cambered surface, thus contact with the silicon material that not yet melts of crucible inside and produce and stir, thus play from stirring action, not only contribute to reducing the thermograde in horizontal direction, obtain the crystal grain that size uniform is tiny, and produce heat exchange action, improve the melting rate of silicon material inside, decrease fusing time.
Protruding 4 of tip shape is crystal atoms gathering provides Rendezvous Point, contributes to the probability improving crystal grain atomic cohesion, promotes that grain-size exceedes critical size and nucleation smoothly.Further, tip shape projection 4 is conducive to forming crystal growth point, thus avoids the growth at random of crystal grain, reaches the object controlling grain orientation growth.
Claims (8)
1. a crucible used for polycrystalline silicon ingot casting, has the bottom surface (1) in plane and the sidewall (2) vertical with bottom surface (1); It is characterized in that: the bottom surface (1) in described crucible is upper, the edge that combines with sidewall (2) is the groove (3) arranged in circumference, and described groove (3) its cross-sectional shape is the arc that links up.
2. crucible used for polycrystalline silicon ingot casting according to claim 1, it is characterized in that: the cross section of described groove (3) is made up of two sections of connected arcs (3a, 3b), and the radian (α) of side arc (3a) adjacent with sidewall is more than or equal to the radian of opposite side arc (3b).
3. crucible used for polycrystalline silicon ingot casting according to claim 2, is characterized in that: the degree of depth (H) of described groove (3) is 10 ~ 50mm, width (W) is 20 ~ 100mm; The radian (α) of side arc (3a) that described groove (3) is adjacent with sidewall is 90 °.
4. crucible used for polycrystalline silicon ingot casting according to claim 1, is characterized in that: the crucible thickness at described groove (3) place is identical with the crucible thickness at described bottom surface (1) place.
5. the crucible used for polycrystalline silicon ingot casting according to claim 1 or 2 or 3 or 4, it is characterized in that: described bottom surface (1) surface that is upper and groove (3) is provided with tip shape projection (4), and the central shaft of described tip shape projection (4) is vertical with bottom surface (1).
6. according to crucible used for polycrystalline silicon ingot casting according to claim 5, it is characterized in that: the height of described tip shape projection (4) is 1 ~ 5mm, the angle=that sharp corner maximum appearance profile in top is formed 30 °.
7. according to crucible used for polycrystalline silicon ingot casting according to claim 5, it is characterized in that: described tip shape projection (4) is in close-packed arrays.
8. according to crucible used for polycrystalline silicon ingot casting according to claim 5, it is characterized in that: described tip shape projection (4) is in regular arrangement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520977445.5U CN205171015U (en) | 2015-11-30 | 2015-11-30 | Crucible for polycrystalline silicon cast ingots |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520977445.5U CN205171015U (en) | 2015-11-30 | 2015-11-30 | Crucible for polycrystalline silicon cast ingots |
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| CN205171015U true CN205171015U (en) | 2016-04-20 |
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| CN201520977445.5U Expired - Fee Related CN205171015U (en) | 2015-11-30 | 2015-11-30 | Crucible for polycrystalline silicon cast ingots |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107794569A (en) * | 2017-10-26 | 2018-03-13 | 河北工业大学 | A kind of method and its device of polysilicon chip straight forming |
| CN110257911A (en) * | 2019-07-26 | 2019-09-20 | 深圳市全普科技有限公司 | A kind of crucible device for monocrystalline silicon growing furnace |
| CN116277634A (en) * | 2023-03-28 | 2023-06-23 | 海南苏生生物科技有限公司 | Tissue engineering bracket production mould capable of directional solidification |
-
2015
- 2015-11-30 CN CN201520977445.5U patent/CN205171015U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107794569A (en) * | 2017-10-26 | 2018-03-13 | 河北工业大学 | A kind of method and its device of polysilicon chip straight forming |
| CN107794569B (en) * | 2017-10-26 | 2019-11-05 | 河北工业大学 | A kind of method and device thereof of polysilicon chip straight forming |
| CN110257911A (en) * | 2019-07-26 | 2019-09-20 | 深圳市全普科技有限公司 | A kind of crucible device for monocrystalline silicon growing furnace |
| CN116277634A (en) * | 2023-03-28 | 2023-06-23 | 海南苏生生物科技有限公司 | Tissue engineering bracket production mould capable of directional solidification |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160420 Termination date: 20181130 |