CN110257911A - A kind of crucible device for monocrystalline silicon growing furnace - Google Patents

A kind of crucible device for monocrystalline silicon growing furnace Download PDF

Info

Publication number
CN110257911A
CN110257911A CN201910682441.7A CN201910682441A CN110257911A CN 110257911 A CN110257911 A CN 110257911A CN 201910682441 A CN201910682441 A CN 201910682441A CN 110257911 A CN110257911 A CN 110257911A
Authority
CN
China
Prior art keywords
groove
curved wall
fixed
annular mounting
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910682441.7A
Other languages
Chinese (zh)
Other versions
CN110257911B (en
Inventor
陈亚雄
许颖
关绍辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Quanpu Technology Co Ltd
Original Assignee
Shenzhen Quanpu Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Quanpu Technology Co Ltd filed Critical Shenzhen Quanpu Technology Co Ltd
Priority to CN201910682441.7A priority Critical patent/CN110257911B/en
Publication of CN110257911A publication Critical patent/CN110257911A/en
Application granted granted Critical
Publication of CN110257911B publication Critical patent/CN110257911B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002Crucibles or containers

Abstract

The invention discloses a kind of crucible device for monocrystalline silicon growing furnace, including graphite body, the graphite body lateral wall is provided with several annular mounting grooves, and mounting rack is fixed in annular mounting groove, is equipped with electromagnetic induction heater on mounting rack;Annular mounting groove bottom is provided with several card slots, and mounting rack includes heat-conducting substrate, and heat-conducting substrate bottom surface, which is fixed with, is fixed on heat-conducting substrate top surface by the first bolt with the one-to-one bayonet lock of card slot, electromagnetic induction heater;Graphite body inner sidewall is provided with several the first grooves, and the first groove is evenly distributed on top edge and the lower edge of annular mounting groove.The present invention can improve the deficiencies in the prior art, convenient for the dismounting of electromagnetic induction heater, ensure that the accurate control in temperature field in crucible.

Description

A kind of crucible device for monocrystalline silicon growing furnace
Technical field
The present invention relates to technical field of semiconductors, especially a kind of crucible device for monocrystalline silicon growing furnace.
Background technique
In the growth furnace for preparing single crystal silicon, need to carry out heating and melting to single crystal silicon materials using crucible.Make It when electromagnetic induction heater being used to be heated as heat source, needs for electromagnetic induction heater to be mounted on outside crucible, in order to protect The accurate control in temperature field in crucible is demonstrate,proved, the installation site and angle of electromagnetic induction heater have higher requirement.And crucible is all There is certain service life, in replacement crucible every time, disassembling operations, operating process will be carried out to electromagnetic induction heater It is relatively complicated, it is time-consuming and laborious.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of crucible device for monocrystalline silicon growing furnace, it is able to solve existing There is the deficiency of technology, convenient for the dismounting of electromagnetic induction heater, ensure that the accurate control in temperature field in crucible.
In order to solve the above technical problems, the technical solution used in the present invention is as follows.
A kind of crucible device for monocrystalline silicon growing furnace, including graphite body, the graphite body lateral wall are provided with Several annular mounting grooves are fixed with mounting rack in annular mounting groove, are equipped with electromagnetic induction heater on mounting rack;Annular peace Tankage bottom is provided with several card slots, and mounting rack includes heat-conducting substrate, and heat-conducting substrate bottom surface is fixed with to be corresponded with card slot Bayonet lock, electromagnetic induction heater is fixed on heat-conducting substrate top surface by the first bolt;Graphite body inner sidewall is provided with several A first groove, the first groove are evenly distributed on top edge and the lower edge of annular mounting groove.
Preferably, the card slot side setting is jagged, bayonet lock includes the outer sleeve connecting with heat-conducting substrate, outer sleeve It is inside socketed with support rod, support bar top is fixed with rounded portions, first through hole, rounded portions are respectively arranged on outer sleeve and card slot On be provided with the tapped blind hole coaxial with first through hole, the second bolt is connected in tapped blind hole after passing through first through hole, by card Pin is fixed on card slot.
Preferably, the surface of the card slot is covered with wearing layer.
Preferably, the heat-conducting substrate top surface is provided with metal clips, metal clips edge is fixed with heat-conducting substrate, gold Belong to the third groove of elastic slice being provided centrally with for being clamped electromagnetic induction heater.
Preferably, first groove is provided with the first curved wall, the first groove far from the side of annular mounting groove Side close to annular mounting groove is provided with the second curved wall, and the bottom of the first curved wall and the second curved wall passes through flat Face connection, the curvature of the first curved wall is 1.5~2 times of the second curved wall curvature, and the length of planar portions is less than first The depth of groove, the first curved wall and the second curved wall and the tangent connection of planar portions.
Preferably, the bottom of the graphite body is provided with several the second grooves, the arrangement of the second grove shaped circumferential, definition First groove and the second recess sidewall are length direction, the length direction at least one of each second groove apart from maximum direction The length direction of a first groove is parallel therewith.
Brought beneficial effect is by adopting the above technical scheme: the present invention by the outside of crucible pre-given electromagnetic incude The installation site of heater, convenient for the positioning to electromagnetic induction heater.When installing electromagnetic induction heater, first by electromagnetism Induction heater is fixed on mounting rack.Special bayonet fitting structure is designed between mounting rack and graphite body, to realize Quick, the accurate positioning installation of electromagnetic induction heater.Wearing layer is used to protect crucible, and electromagnetism not only can be improved in metal clips Induction heater is convenient for fixation of the electromagnetic induction heater on mounting rack to the heating efficiency of crucible.Needle on the inside of crucible First groove is arranged to the installation site of electromagnetic induction heater, and the shape of the first groove is optimized, thus in electricity When magnetic induction heaters are heated, using single crystal silicon materials mobility realize in crucible uniform temperature fields degree it is effective Control.The present invention is not provided with more heating devices in crucible bottom, but by the second groove of design, utilize the first groove The material flow trend formed with electromagnetic induction heater in heating location, controls the material temperature of crucible bottom, by It is lower in the Temperature Field Control precision of crucible bottom, so the quantity of heater can be reduced by above-mentioned improvement, not only save Cost, and further shorten the disassembly and assembly time of electromagnetic induction heater when replacing crucible.
Detailed description of the invention
Fig. 1 is the axial sectional view of a specific embodiment of the invention.
Fig. 2 is the structure chart that card slot is matched with bayonet lock in a specific embodiment of the invention.
Fig. 3 is the structure chart of the first groove in a specific embodiment of the invention.
Fig. 4 is the structure chart of the second groove in a specific embodiment of the invention.
Specific embodiment
Referring to Fig.1-4, a specific embodiment of the invention includes graphite body 1,1 lateral wall of the graphite body setting There are several annular mounting grooves 2, mounting rack 3 is fixed in annular mounting groove 2, electromagnetic induction heater is installed on mounting rack 3 4;2 bottom of annular mounting groove is provided with several card slots 5, and mounting rack 3 includes heat-conducting substrate 6,6 bottom surface of heat-conducting substrate be fixed with The one-to-one bayonet lock 7 of card slot 5, electromagnetic induction heater 4 are fixed on 6 top surface of heat-conducting substrate by the first bolt 25;Graphite master 1 inner sidewall of body is provided with several the first grooves 8, and the first groove 8 is evenly distributed on the top edge of annular mounting groove 2 and following Edge.5 side of card slot setting jagged 9, bayonet lock 7 includes the outer sleeve 10 connecting with heat-conducting substrate 6, is socketed with branch in outer sleeve 10 Strut 11 is fixed with rounded portions 12 at the top of support rod 11, first through hole 13 is respectively arranged on outer sleeve 10 and card slot 5, round The tapped blind hole 14 coaxial with first through hole 13 is provided in portion 12, the second bolt 15 is connected to screw thread after passing through first through hole 13 In blind hole 14, bayonet lock 7 is fixed on card slot 5.The surface of card slot 5 is covered with wearing layer 16.6 top surface of heat-conducting substrate is provided with gold Belong to elastic slice 17,17 edge of metal clips and heat-conducting substrate 6 are fixed, and metal clips 17 is provided centrally with for being clamped electromagnetic induction The third groove 18 of heater 4.First groove 8 is provided with the first curved wall 19 far from the side of annular mounting groove 2, and first is recessed Slot 8 is provided with the second curved wall 20 close to the side of annular mounting groove 2, the first curved wall 19 and the second curved wall 20 Bottom is connected by planar portions 21, and the curvature of the first curved wall 19 is 1.5~2 times of 20 curvature of the second curved wall, plane Depth of the length in portion 21 less than the first groove 8, the first curved wall 19 and the second curved wall 20 and the tangent company of planar portions 21 It connects.The bottom of graphite body 1 is provided with several the second grooves 22,22 annular array of the second groove, defines the first groove 8 and the Two grooves, 22 side wall is length direction apart from maximum direction, at least one is first recessed for the length direction of each second groove 22 The length direction of slot 8 is parallel therewith.
In addition, the side wall on direction of second groove 22 perpendicular to length direction is provided with inclined plane part 23, inclined plane part court It is tilted to the inside of the second groove 22, is provided with the second through-hole 24 being connected with 1 bottom surface of graphite body on inclined plane part 23.Second Inclined plane part structure on groove 22 can carry out sufficient water conservancy diversion to raw material during material flow, to improve crucible bottom Uniform temperature fields degree on three-dimensional.
In the description of the present invention, it is to be understood that, term " longitudinal direction ", " transverse direction ", "upper", "lower", "front", "rear", The orientation or positional relationship of the instructions such as "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is based on attached drawing institute The orientation or positional relationship shown is merely for convenience of the description present invention, rather than the device or element of indication or suggestion meaning must There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its Equivalent thereof.

Claims (6)

1. a kind of crucible device for monocrystalline silicon growing furnace, including graphite body (1), it is characterised in that: the graphite body (1) lateral wall is provided with several annular mounting grooves (2), is fixed with mounting rack (3) in annular mounting groove (2), on mounting rack (3) Electromagnetic induction heater (4) are installed;Annular mounting groove (2) bottom is provided with several card slots (5), and mounting rack (3) includes leading Hot substrate (6), heat-conducting substrate (6) bottom surface is fixed with to be led to card slot (5) one-to-one bayonet lock (7), electromagnetic induction heater (4) It crosses the first bolt (25) and is fixed on heat-conducting substrate (6) top surface;Graphite body (1) inner sidewall is provided with several the first grooves (8), First groove (8) is evenly distributed on top edge and the lower edge of annular mounting groove (2).
2. the crucible device according to claim 1 for monocrystalline silicon growing furnace, it is characterised in that: the card slot (5) one Jagged (9) are arranged in side, and bayonet lock (7) includes the outer sleeve (10) connecting with heat-conducting substrate (6), are socketed with branch in outer sleeve (10) Strut (11), support rod (11) top are fixed with rounded portions (12), and it is logical that first is respectively arranged on outer sleeve (10) and card slot (5) Hole (13), is provided with the tapped blind hole (14) coaxial with first through hole (13) in rounded portions (12), and the second bolt (15) passes through the It is connected to after one through-hole (13) in tapped blind hole (14), bayonet lock (7) is fixed on card slot (5).
3. the crucible device according to claim 2 for monocrystalline silicon growing furnace, it is characterised in that: the card slot (5) Surface is covered with wearing layer (16).
4. the crucible device according to claim 3 for monocrystalline silicon growing furnace, it is characterised in that: the heat-conducting substrate (6) top surface is provided with metal clips (17), and metal clips (17) edge and heat-conducting substrate (6) are fixed, in metal clips (17) The heart is provided with the third groove (18) for being clamped electromagnetic induction heater (4).
5. the crucible device according to claim 1 for monocrystalline silicon growing furnace, it is characterised in that: first groove (8) side far from annular mounting groove (2) is provided with the first curved wall (19), and the first groove (8) is close to annular mounting groove (2) Side be provided with the second curved wall (20), the bottom of the first curved wall (19) and the second curved wall (20) passes through plane Portion (21) connection, the curvature of the first curved wall (19) is 1.5~2 times of the second curved wall (20) rate, planar portions (21) For length less than the depth of the first groove (8), the first curved wall (19) and the second curved wall (20) and planar portions (21) are tangent Connection.
6. the crucible device according to claim 5 for monocrystalline silicon growing furnace, it is characterised in that: the graphite body (1) bottom is provided with several the second grooves (22), and the second groove (22) annular array defines the first groove (8) and second Groove (22) side wall is length direction apart from maximum direction, the length direction of each second groove (22) at least one first The length direction of groove (8) is parallel therewith.
CN201910682441.7A 2019-07-26 2019-07-26 Crucible device for monocrystalline silicon growth furnace Active CN110257911B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910682441.7A CN110257911B (en) 2019-07-26 2019-07-26 Crucible device for monocrystalline silicon growth furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910682441.7A CN110257911B (en) 2019-07-26 2019-07-26 Crucible device for monocrystalline silicon growth furnace

Publications (2)

Publication Number Publication Date
CN110257911A true CN110257911A (en) 2019-09-20
CN110257911B CN110257911B (en) 2021-06-22

Family

ID=67911956

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910682441.7A Active CN110257911B (en) 2019-07-26 2019-07-26 Crucible device for monocrystalline silicon growth furnace

Country Status (1)

Country Link
CN (1) CN110257911B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05319996A (en) * 1992-05-15 1993-12-03 Sanyo Electric Co Ltd Apparatus for growing silicon carbide single crystal
CN103896275A (en) * 2012-12-27 2014-07-02 苏州晶科新能源装备科技有限公司 Plasma refining and purifying furnace for producing solar energy polysilicon through metallurgy method
CN104562185A (en) * 2014-12-26 2015-04-29 华中科技大学 Czochralski crystal growth furnace
CN205171015U (en) * 2015-11-30 2016-04-20 景德镇陶瓷学院 Crucible for polycrystalline silicon cast ingots
CN206550302U (en) * 2017-02-06 2017-10-13 江西吉事达厨房用品有限公司 A kind of preparation facilities of electromagnetic agitation semi-solid metal slurry
CN209101792U (en) * 2018-11-07 2019-07-12 开化祥盛磁业有限公司 A kind of sintered NdFeB smelting equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05319996A (en) * 1992-05-15 1993-12-03 Sanyo Electric Co Ltd Apparatus for growing silicon carbide single crystal
CN103896275A (en) * 2012-12-27 2014-07-02 苏州晶科新能源装备科技有限公司 Plasma refining and purifying furnace for producing solar energy polysilicon through metallurgy method
CN104562185A (en) * 2014-12-26 2015-04-29 华中科技大学 Czochralski crystal growth furnace
CN205171015U (en) * 2015-11-30 2016-04-20 景德镇陶瓷学院 Crucible for polycrystalline silicon cast ingots
CN206550302U (en) * 2017-02-06 2017-10-13 江西吉事达厨房用品有限公司 A kind of preparation facilities of electromagnetic agitation semi-solid metal slurry
CN209101792U (en) * 2018-11-07 2019-07-12 开化祥盛磁业有限公司 A kind of sintered NdFeB smelting equipment

Also Published As

Publication number Publication date
CN110257911B (en) 2021-06-22

Similar Documents

Publication Publication Date Title
CN110257911A (en) A kind of crucible device for monocrystalline silicon growing furnace
TW201522254A (en) Glass manufacturing apparatus and methods of fabricating glass ribbon
CN103666491B (en) Rotating bed gas retort
CN202744653U (en) Graphite crucible for preparing single crystal silicon by adopting Czochralski method
EP2610570B1 (en) Heating element arrangement for a vacuum heat treating furnace
CN102021660B (en) Polysilicon crucible sintering furnace
KR101461787B1 (en) Heating unit and reduction furnace having thereof
CN203625526U (en) Bottom heater for single crystal furnace
CN110512272A (en) A kind of crystal growing furnace
CN106914609B (en) A kind of aluminium alloy melt heating heat preserving method
CN207130358U (en) A kind of water conservancy diversion drum supporting device
CN215103676U (en) Temperature gradient method crystal growth is with adjustable crystal stove of temperature gradient
CN202006628U (en) Electric heating baking oven for heat transfer machine
CN208545294U (en) A kind of soakage device for G7.5 line forming furnace
CN210048879U (en) Silicon ingot casting thermal field structure
CN207587703U (en) A kind of heating system
CN105928045B (en) Oil heater
CN202261893U (en) Electromagnetic heater of chemical fiber extruder
CN210341123U (en) Water-cooling heat shield device and single crystal furnace with same
CN113122826B (en) Heating device of PECVD (plasma enhanced chemical vapor deposition) equipment
CN215571225U (en) Electric water heater
CN208108484U (en) A kind of raw material hot oil heater
CN218277169U (en) Graphite heater for producing graphene by chemical vapor deposition method
CN220321986U (en) Submerged arc furnace
CN201990765U (en) Sintering furnace of polycrystalline silicon crucible

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant