CN210048879U - Silicon ingot casting thermal field structure - Google Patents
Silicon ingot casting thermal field structure Download PDFInfo
- Publication number
- CN210048879U CN210048879U CN201920758907.2U CN201920758907U CN210048879U CN 210048879 U CN210048879 U CN 210048879U CN 201920758907 U CN201920758907 U CN 201920758907U CN 210048879 U CN210048879 U CN 210048879U
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- CN
- China
- Prior art keywords
- crucible
- thermal field
- heater
- silicon ingot
- field structure
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 238000005266 casting Methods 0.000 title claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 239000010439 graphite Substances 0.000 claims description 12
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 5
- 230000008859 change Effects 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Abstract
The utility model provides a silicon ingot casting thermal field structure, include the crucible and around crucible heater all around, the heater has the central part and is located the tip at central part both ends, the thickness of tip be thicker than the thickness of central part. The utility model discloses a change the thickness of heater both ends position department, make the temperature at both ends be less than the central zone of heater slightly to reach the effect of the gradient that generates heat, optimized the temperature distribution of whole thermal field, be favorable to improving the crystal defect of crucible edge, improve the crystal quality.
Description
Technical Field
The utility model relates to a photovoltaic field of making especially relates to a silicon ingot casting thermal field structure.
Background
In the current photovoltaic industry, heating elements commonly used in a thermal field of a polycrystalline ingot furnace or a single crystal ingot furnace are all high-purity graphite materials, and due to the fact that the heating elements are high-temperature resistant and stable in performance, the density of an isometric pressure material is uniform, and good resistivity uniformity, stable control and production can be achieved. In the design process of the thermal field, the resistivity of the heater can be preliminarily selected and estimated, after different resistivities are selected according to the materials of different heaters, the required resistance value is calculated through design, but the resistivity of graphite materials produced by different manufacturers possibly has deviation, so that the resistance value requirement meeting the design requirement can be met through multiple times of processing and measurement adjustment when the thickness of the heater is initially processed.
However, the heater is maintained at substantially the same thickness throughout the upper, lower, left, and right sides thereof regardless of the final process thickness of the heater, and as shown in fig. 1, the two planes (i.e., the inner and outer side surfaces) in the thickness direction of the heater a are relatively parallel with substantially no thickness variation, and thus the resistance values at the center position M and the end positions N of the heater are substantially the same. Therefore, the heating value is basically the same on the whole radiation surface of the heater A, when four heaters A are combined into a square heat field to surround the square crucible B, the heat at the two end positions of the heaters is coupled with the heat at the end positions of the adjacent heaters, so that the temperature at the end positions of the heaters is higher than that at the central position M of the heaters, the temperature at the four corners of the crucible is overhigh, the interface is overhung, and the crystal growth is easy to generate defects.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a silicon ingot casting thermal field structure to improve the inhomogeneous problem of heater to crucible edge heating among the prior art.
Specifically, the utility model discloses a realize through following technical scheme: a silicon ingot casting thermal field structure comprises a crucible and a heater surrounding the periphery of the crucible, wherein the heater is provided with a central part and end parts positioned at two ends of the central part, and the thickness of the end parts is thicker than that of the central part.
Further, the central portion and the end portions are connected in series with each other, and the thickness of the end portions becomes thicker in a direction away from the central portion.
Furthermore, the crucible is in a direction and is provided with four corners; the end of the heater is located at the corner of the crucible.
Further, the end portion has a flat outer wall surface and an inclined inner wall surface.
Further, the inclined inner wall surface is formed by gradually inclining and extending inwards from the central part position.
Further, the number of the heaters is four, and the heaters are respectively arranged in four directions of the crucible, so that the crucible can be heated from the four directions.
Furthermore, a graphite guard plate is arranged between the heater and the outer wall of the crucible, and the graphite guard plate surrounds the crucible in four directions.
Further, the bottom of the crucible is also provided with a heat dissipation platform.
The utility model discloses a change the thickness of heater both ends position department, make the temperature at both ends be less than the central zone of heater slightly to reach the effect of the gradient that generates heat, optimized the temperature distribution of whole thermal field, be favorable to improving the crystal defect of crucible edge, improve the crystal quality.
Drawings
Fig. 1 is a schematic diagram of a silicon ingot casting thermal field structure in the prior art.
Fig. 2 is a layout schematic diagram of the silicon ingot casting thermal field structure of the utility model.
Fig. 3 is a schematic diagram of the heater of the silicon ingot casting thermal field structure of the present invention.
Fig. 4 is the internal structure schematic diagram of the silicon ingot casting thermal field structure of the present invention.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
Referring to fig. 2 to 4, the present invention provides a silicon ingot thermal field structure, which includes a crucible 10, a graphite guard plate 20 surrounding the crucible 10, a heater 30 surrounding the graphite guard plate 20, and a heat dissipation platform 40 supported at the bottom of the crucible 10. The crucible 10 has a square shape, and is used for containing a silicon material and making the silicon material in a molten state inside. The graphite guard plate 20 surrounds the crucible 10 in four directions, so that the crucible 10 is disposed inside the graphite guard plate 20, and the crucible 10 can be protected in four directions, and preferably, the graphite guard plate 20 is disposed at the bottom of the crucible 10, so that the crucible 10 can be protected around and under. The heat dissipation platform 40 is located below the crucible 10, and preferably, the heat dissipation platform 40 is supported on the graphite guard plate 20 at the bottom of the crucible 10 for dissipating heat from the crucible 10. The crucible 10 is heated by the heater 30, which is described in detail below, to transfer heat to the silicon material inside to melt the silicon material.
As shown in fig. 2, four heaters 30 are provided, which are respectively provided in four directions of the crucible 10, and can heat and raise the temperature of the crucible 10 from the four directions, and the graphite shield 20 is provided between the heaters 30 and the outer wall of the crucible 10, so as to prevent the heaters 30 from directly facing the crucible 10, and a certain gap is left between each heater 30 and the graphite shield 20. The end portions 32 of two adjacent heaters 30 are connected and fixed with each other through connecting plates 50, and the connecting plates 50 correspond to the four corners of the crucible 10 in position. The heater 30 includes a central portion 31 and end portions 32 at both ends of the central portion 31, the central portion 31 corresponding to a central region O in the crucible 10, the end portion 32 is located at the corner of the crucible 10, the central portion 31 and the end portion 32 are connected in series, the current in the two portions is the same when the two portions are electrified, wherein the thickness of the end portions 32 is thicker than that of the central portion 31, and therefore, the resistance of the end portions 32 is smaller than that of the central portion 31, so that the amount of heat it generates in the energized state will be less than the amount of heat generated by the central portion 31, so that the coupling temperatures at the four corners of the crucible 10 can be reduced to be closer to the radiation temperature at the central portion 31 of the heater 30, as indicated by arrows in fig. 2 representing the amount of heat radiated from the heater 30 toward the inside of the crucible 10, and indicates more and less heat quantity by the length of the arrows, it can be seen that the heat quantity at the end 32 of the heater 30 is gradually reduced as the thickness thereof is increased.
In the preferred embodiment of the present invention, the thickness of the end portion 32 of the heater 30 becomes thicker gradually towards the direction away from the central portion 31, as shown in fig. 3, the end portion 32 has a flat outer wall surface 33 and an inclined inner wall surface 34, and the inclined inner wall surface 34 extends from the central portion 31 to incline inwards gradually, so that the thickness of the end portion 32 becomes thicker gradually. In addition, the end portion 32 and the central portion 31 are detachably connected, and both ends of the central portion 31 are connected and matched with the end portion 32 to form a serial connection.
To sum up, the utility model discloses a thickness that changes the 30 both ends 32 departments of heater changes the calorific capacity of different positions, has realized the gradient change of temperature, has optimized the temperature field gradient on silicon bulk center, side and four angles, changes the defect that the protruding crystal growth interface brought, more is fit for control and optimization to casting single crystal interface and crystal defect.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A silicon ingot casting thermal field structure comprises a crucible and a heater surrounding the periphery of the crucible, and is characterized in that the heater is provided with a central part and end parts positioned at two ends of the central part, and the thickness of the end parts is thicker than that of the central part.
2. The silicon ingot thermal field structure of claim 1, wherein the central portion and the end portions are connected in series with each other, and the thickness of the end portions becomes gradually thicker in a direction away from the central portion.
3. The silicon ingot thermal field structure of claim 2, wherein the crucible is directional with four corners; the end of the heater is located at the corner of the crucible.
4. The silicon ingot thermal field structure of claim 3, wherein the end portion has a flat outer wall surface and an inclined inner wall surface.
5. The silicon ingot thermal field structure of claim 4, wherein the sloped inner wall surface extends gradually sloped inward from the central location.
6. The silicon ingot thermal field structure of claim 5, wherein four heaters are provided, which are respectively provided in four directions of the crucible, and the crucible can be heated from the four directions.
7. The silicon ingot thermal field structure of claim 6, wherein graphite shields are provided between the heater and the outer wall of the crucible, the graphite shields surrounding the crucible in four directions.
8. The silicon ingot thermal field structure of claim 7, wherein the bottom of the crucible is further provided with a heat dissipation platform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920758907.2U CN210048879U (en) | 2019-05-24 | 2019-05-24 | Silicon ingot casting thermal field structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920758907.2U CN210048879U (en) | 2019-05-24 | 2019-05-24 | Silicon ingot casting thermal field structure |
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| Publication Number | Publication Date |
|---|---|
| CN210048879U true CN210048879U (en) | 2020-02-11 |
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| CN201920758907.2U Active CN210048879U (en) | 2019-05-24 | 2019-05-24 | Silicon ingot casting thermal field structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114045553A (en) * | 2021-02-23 | 2022-02-15 | 赛维Ldk太阳能高科技(新余)有限公司 | Ingot furnace, ingot crystalline silicon and preparation method thereof |
-
2019
- 2019-05-24 CN CN201920758907.2U patent/CN210048879U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114045553A (en) * | 2021-02-23 | 2022-02-15 | 赛维Ldk太阳能高科技(新余)有限公司 | Ingot furnace, ingot crystalline silicon and preparation method thereof |
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| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: Atlas sunshine Power Group Co.,Ltd. Patentee after: Baotou Ates Sunshine Energy Technology Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. Patentee before: Baotou Ates Sunshine Energy Technology Co.,Ltd. |