CN212476951U - Temperature control device for growth of silicon carbide crystal - Google Patents
Temperature control device for growth of silicon carbide crystal Download PDFInfo
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- CN212476951U CN212476951U CN202022305481.0U CN202022305481U CN212476951U CN 212476951 U CN212476951 U CN 212476951U CN 202022305481 U CN202022305481 U CN 202022305481U CN 212476951 U CN212476951 U CN 212476951U
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Abstract
The utility model relates to a temperature control device and method that carborundum crystal grows, it changes the heat radiation mode of seed crystal support into heat conduction mode, recycles semiconductor radiator characteristic, through the terminal voltage of controller control semiconductor radiator, makes the heat flux that the graphite body conducts become controllable variable to realize the temperature and the growth rate mode of a simple direct control growth interface.
Description
Technical Field
The utility model relates to a preparation field of silicon carbide crystal, concretely relates to temperature control device that silicon carbide crystal grows.
Background
The current standard technology for growing silicon carbide single crystals is a seeded sublimation method, which is also called as a physical vapor transport growth method (PVT). The seeded sublimation method is carried out by placing a seed crystal in a slightly lower temperature region in a crucible, placing a silicon carbide SiC source (growth source) at the bottom of the graphite crucible, and placing the silicon carbide SiC seed crystal near the crucible cover. The crucible is heated to 2300-2400 ℃ by radio frequency induction or resistance, and the seed temperature is set to about 100 ℃ lower than the growth source temperature, so that the sublimated silicon carbide SiC material can condense and crystallize on the seed crystal. To maintain the upward transportation of kinetic energy of the silicon carbide source, a temperature gradient of about 20 ℃/cm needs to be established in the longitudinal axis direction of the growth cavity, but the actual temperature gradient parameters are different according to various production equipment.
Silicon carbide crystals are available in many crystal forms, such as 2H, 4H, 6H, 3C, 15R, etc. The formation of the crystal-type form is closely related to the growth temperature of the interface, as shown in FIG. 1. Any deviation from the strictly periodic alignment of the lattice belongs to the category of defects. Therefore, in order to reduce the coexistence of multiple crystal types and the generation of defects, the temperature control of the growth interface (the surface of the seed crystal) becomes a very important control parameter during the growth process.
The current method is to monitor the temperature parameters of the back of the seed crystal controller and then adjust the output of the induction heater to control the temperature of the growth interface. The disadvantage of this method is that the overall thermal field gradient is changed, and controlling the formation of the thermal field gradient is a very complicated and not accurate enough method. At the same time, the temperature of the growth source is also lowered, resulting in a decrease in the growth rate.
In view of the above, the applicant has made an in-depth conception on the problems in the silicon carbide growth process, and has generated the present application.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a temperature control device of simple and effectual carborundum crystal growth.
In order to achieve the above object, the utility model adopts the following technical scheme:
a temperature control device for the growth of silicon carbide crystals comprises a controller, a shell, a heater and a graphite crucible which are arranged in the shell,
the controller is connected with the heater, and the heater is arranged on the periphery of the graphite crucible; the graphite crucible comprises a crucible body and a cover body, and a seed crystal support is arranged on the inner side of the cover body; the crucible body is used for arranging a silicon carbide growth source;
the upper end of the cover body is provided with a graphite body, the lower end of the graphite body is connected with the seed crystal support, and the upper end of the graphite body is connected with the semiconductor heat radiation body; the semiconductor heat radiation body is connected with the direct current power supply and the controller; two temperature measuring points are arranged on the graphite body, two temperature measuring points are arranged on the semiconductor heat radiation body, and each temperature measuring point is connected with the controller.
And a heat shield is arranged on the periphery of the graphite crucible and is arranged between the heater and the graphite crucible.
An alumina tube is sleeved on the periphery of the graphite body, and a heat shield is further arranged outside the alumina tube.
Two temperature measuring points on the graphite body are respectively arranged at the axial middle position of the graphite column and the midpoint position between the axial middle position and the contact surface of the semiconductor heat radiation body and the graphite body; two temperature measuring points on the semiconductor heat radiation body are respectively arranged on the upper end face and the lower end face of the semiconductor heat radiation body.
After the scheme is adopted, the utility model discloses a heat radiation mode that holds in the palm the seed crystal changes into heat-conduction mode, recycles semiconductor radiator characteristic, through the terminal voltage of controller control semiconductor radiator, makes the heat flux that the graphite body conducts become controllable variable to realize the temperature and the growth rate mode of a simple direct control growth interface.
Drawings
FIG. 1 is a graph of the formation of multiple types of different silicon carbide crystals as a function of temperature;
fig. 2 is a schematic structural diagram of the present invention.
Description of reference numerals:
a housing 1; a heater 2; a crucible body 3; a lid body 4; a graphite body 5; a semiconductor heat sink 6; heat shields 71, 72; temperature measuring points T1, T2, T3 and T4; a seed crystal holder 8; a silicon carbide growth source 9; a silicon carbide crystal 10; alumina or zirconia tubes 11.
Detailed Description
As shown in fig. 2, the present invention discloses a temperature control device for silicon carbide crystal growth, which comprises a controller, a housing 1, a heater 2 disposed in the housing 1, and a graphite crucible, wherein the controller is connected to the heater 2, and the heater 2 is disposed at the periphery of the graphite crucible; the graphite crucible comprises a crucible body 3 and a cover body 4, wherein a seed crystal holder 8 is arranged on the inner side of the cover body 4 and is used for growing a silicon carbide crystal 10 thereon; the crucible body 3 is used for arranging a silicon carbide growth source 9; the upper end of the cover body 4 is provided with a graphite body 5, the lower end of the graphite body 5 is connected with a seed crystal support 8, and the upper end is connected with a semiconductor heat radiation body 6; the semiconductor heat radiation body 6 is connected with a direct current power supply and a controller; two temperature measuring points T3 and T4 are arranged on the graphite body 5, two temperature measuring points T3 and two temperature measuring points T4 are arranged on the semiconductor heat radiating body 6, and the temperature measuring points T1, T2, T3 and T4 are connected with a controller.
The utility model discloses a heat radiation mode that holds in the palm 8 with the seed crystal changes into heat-conduction mode, recycles 6 characteristics of semiconductor radiator, through the terminal voltage of controller control semiconductor radiator 6, makes the heat flux that graphite body 5 conducts become controllable variable to realize the temperature and the growth rate mode of a simple direct control growth interface.
In order to reduce heat loss and ensure the crystal growth rate and the accuracy of temperature control, a heat shield 71 is provided around the graphite crucible, and the heat shield 71 is disposed between the heater 2 and the graphite crucible. An alumina tube or a zirconia tube 11 is sleeved on the periphery of the graphite body 5, and a heat shield 72 is arranged outside the alumina tube or the zirconia tube 11. The aluminum oxide and the zirconium oxide are thermal insulators, the melting points of the aluminum oxide and the zirconium oxide are more than 1900 ℃, and when the heat shielding effect is good, the influence of the external temperature on the graphite column can be reduced. The heat shields 71, 72 may alternatively be graphite felt heat shields.
Two temperature measuring points T1 and T2 on the graphite body 5 are respectively provided at the axial middle position of the graphite column and the midpoint position between the axial middle position and the contact surface of the semiconductor heat radiator 6 and the graphite body 5. The semiconductor heat radiator 6 is arranged outside the shell 1, and two temperature measuring points T3 and T4 on the semiconductor heat radiator 6 are respectively arranged on the upper end face and the lower end face of the semiconductor heat radiator 6. The controller calculates and controls the thermal conductivity according to the temperature difference of the four temperature measuring points T1, T2, T3 and T4, changes the voltage difference at two ends of the semiconductor heat radiator 6 according to the thermal conductivity, changes the thermal conductivity coefficient, further changes the conducted heat, changes the temperature of a growth interface, and realizes simple and effective control of the temperature of the long grain boundary surface and the nucleation rate.
In summary, in the above-mentioned device, the heat at the end of the crystal growth is conducted to the semiconductor material heat sink material by the system, and then is conducted to the outside. In the graphite body 5, a temperature gradient exists in the graphite body 5 in the conduction direction during conduction. As the crystal grows, the temperature of the input section is increased, the crystal growth is slowed, the temperature gradient in the graphite body 5 along the conduction direction is reduced, and the heat conduction is reduced. Adjusting the overall nucleation rate can be seen as controlling the heat transfer of the system. The temperature of the input section is limited by the design of a thermal field in the crystal growth furnace body, the sectional area and the length of the graphite body 5 are geometric shapes, the graphite body 5 can be arbitrarily controlled to deform unless in crystal growth, the conduction cannot be changed, the heat dissipation end section is a large environment, and the control of the temperature of the large environment is not feasible. Therefore, a semiconductor heat sink 6 is added to the graphite body 5. The heat in the whole closed system is in balance (only one inlet and one outlet), the geometric shape of the semiconductor heat radiator 6 is not changed, the conduction coefficient of the material is changed along with the terminal voltage, and the heat conductivity of the semiconductor heat radiator is controlled by the characteristic, so that the heat conduction rate of the whole system is changed, and the growth rate of the crystal is further controlled.
The above description is only an embodiment of the present invention, and is not intended to limit the technical scope of the present invention, so that any slight modifications, equivalent changes and modifications made by the technical spirit of the present invention to the above embodiments are all within the scope of the technical solution of the present invention.
Claims (4)
1. A temperature control device for growing a silicon carbide crystal is characterized in that: comprises a controller, a shell, a heater and a graphite crucible which are arranged in the shell,
the controller is connected with the heater, and the heater is arranged on the periphery of the graphite crucible; the graphite crucible comprises a crucible body and a cover body, and a seed crystal support is arranged on the inner side of the cover body; the crucible body is used for arranging a silicon carbide growth source;
the upper end of the cover body is provided with a graphite body, the lower end of the graphite body is connected with the seed crystal support, and the upper end of the graphite body is connected with the semiconductor heat radiation body; the semiconductor heat radiation body is connected with the direct current power supply and the controller; two temperature measuring points are arranged on the graphite body, two temperature measuring points are arranged on the semiconductor heat radiation body, and each temperature measuring point is connected with the controller.
2. A device for controlling the temperature of a silicon carbide crystal according to claim 1, wherein: and a heat shield is arranged on the periphery of the graphite crucible and is arranged between the heater and the graphite crucible.
3. A device for controlling the temperature of a silicon carbide crystal according to claim 1, wherein: an aluminum oxide pipe or a zirconium oxide pipe is sleeved on the periphery of the graphite body, and a heat shield is further arranged outside the aluminum oxide pipe or the zirconium oxide pipe.
4. A device for controlling the temperature of a silicon carbide crystal according to claim 1, wherein: two temperature measuring points on the graphite body are respectively arranged at the axial middle position of the graphite column and the midpoint position between the axial middle position and the contact surface of the semiconductor heat radiation body and the graphite body; two temperature measuring points on the semiconductor heat radiation body are respectively arranged on the upper end face and the lower end face of the semiconductor heat radiation body.
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| CN202022305481.0U CN212476951U (en) | 2020-10-16 | 2020-10-16 | Temperature control device for growth of silicon carbide crystal |
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| CN202022305481.0U CN212476951U (en) | 2020-10-16 | 2020-10-16 | Temperature control device for growth of silicon carbide crystal |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112064110A (en) * | 2020-10-16 | 2020-12-11 | 璨隆科技发展有限公司 | Temperature control device for growth of silicon carbide crystal |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112064110A (en) * | 2020-10-16 | 2020-12-11 | 璨隆科技发展有限公司 | Temperature control device for growth of silicon carbide crystal |
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