CN205474106U - Protection seed crystal type crucible - Google Patents
Protection seed crystal type crucible Download PDFInfo
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- CN205474106U CN205474106U CN201620274267.4U CN201620274267U CN205474106U CN 205474106 U CN205474106 U CN 205474106U CN 201620274267 U CN201620274267 U CN 201620274267U CN 205474106 U CN205474106 U CN 205474106U
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- seed crystal
- crucible
- crystal type
- groove
- protection seed
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Abstract
The utility model discloses a protection seed crystal type crucible, including the crucible main part, wherein, the interior bottom of crucible main part has the recess. Protection seed crystal type crucible is through setting up the recess bottom the crucible for the lower of the seed crystal of bottom in the recess is less than other seed crystals of locating the bottom, is keeping normal bottom seed crystal to reserve under the circumstances of height, makes the seed crystal of corner all around intact, thereby has played the effect of protection seed crystal.
Description
Technical field
This utility model relates to polycrystalline silicon ingot casting technical field, particularly relates to a kind of crucible.
Background technology
Present crucible mainly carries loading silicon material and the work of silicon ingot molding long crystalline substance.Photovoltaic solar
Can the development in power station and improving constantly of production technology, client is to efficient silicon chip and efficient group
The demand of part constantly promotes, and ingot casting is key point among these.Conventional fine melt technique by
In not having stable adductive crystallization, the total quality of the silicon ingot produced is on the low side.Research staff
Use seed crystal to gain enlightenment at crystal pulling from monocrystalline, have developed half process of smelting, be greatly improved
The quality of polycrystalline cast ingot, improves photoelectric transformation efficiency.But owing to thermal-preservation thermal field is uneven,
When using half process of smelting, the frequent fine melt of seed crystal of silicon ingot corner, do not play the effect of seeding,
Therefore, how to protect corner seed crystal not melt, be research staff's difficult problem of always wanting to capture.
Utility model content
The purpose of this utility model is to provide a kind of protection seed crystal type crucible, is keeping normal bottom
In the case of amethyst reserves height, all of seed crystal fine melt will not be made, be effectively protected seed
Brilliant.
For solving above-mentioned technical problem, this utility model embodiment provides a kind of protection seed crystal type
Crucible, including Crucible body, wherein, the inner bottom part of described Crucible body has groove.
Wherein, described groove is annular groove.
Wherein, described annular groove with the spacing of the bottom inside wall of described crucible is
20mm-40mm。
Wherein, described annular groove is the most equal with the spacing of the bottom inside wall of described crucible.
Wherein, the longitudinal section of described annular groove is rectangle, trapezoidal or circular arc.
Wherein, the width of described annular groove is 20mm-150mm.
Wherein, the degree of depth of described annular groove is 2mm-10mm.
The protection seed crystal type crucible that this utility model embodiment is provided, compared with prior art,
Have the advantage that
The protection seed crystal type crucible that this utility model embodiment provides, including Crucible body, wherein,
The inner bottom part of described Crucible body has groove.
Described protection seed crystal type crucible, by arranging groove in crucible bottom, this allows for bottom
The lowest part of the seed crystal in groove is less than seed crystal bottom at other, and keeping, normal bottom seed crystal is pre-
In the case of staying height so that the seed crystal of remaining position will not fine melt, thus serve protection seed
Brilliant effect, improves the quality of overall silicon ingot, obtains efficient silicon chip.
In sum, the protection seed crystal type crucible that this utility model embodiment is provided, by
Crucible bottom arranges groove, serves the effect of protection seed crystal, improves the quality of overall silicon ingot,
Obtain efficient silicon chip.
Accompanying drawing explanation
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art,
The accompanying drawing used required in embodiment or description of the prior art will be briefly described below,
It should be evident that the accompanying drawing in describing below is embodiments more of the present utility model, for this
From the point of view of the those of ordinary skill of field, on the premise of not paying creative work, it is also possible to according to
These accompanying drawings obtain other accompanying drawing.
Fig. 1 is concrete real by the one of the protection seed crystal type crucible that this utility model embodiment is provided
Execute the top view structural representation of mode；
Fig. 2 is concrete real by the one of the protection seed crystal type crucible that this utility model embodiment is provided
Execute the front view structural representation of mode.
Detailed description of the invention
The most as described in the background section, in order to obtain the silicon ingot of more high-quality in prior art, many
Have employed fritting production technology during brilliant ingot casting, but during fritting ingot casting, silicon ingot corner seed crystal is the most complete
Molten, cause seeding weak effect.Therefore, how ensureing that corner seed crystal does not melts is to need research staff
The difficult problem overcome.
Based on this, this utility model embodiment provides a kind of protection seed crystal type crucible, including earthenware
Crucible main body, wherein, the inner bottom part of described Crucible body has groove.
In sum, the protection seed crystal type crucible that this utility model embodiment provides, by earthenware
Arranging groove bottom crucible, this lowest part allowing for the seed crystal in bottom groove is less than the end at other
Portion's seed crystal, in the case of keeping normal bottom seed crystal to reserve height so that the seed of remaining position
Crystalline substance will not fine melt, thus serve the effect of protection seed crystal, improve the quality of overall silicon ingot,
To efficient silicon chip.
Understandable for enabling above-mentioned purpose of the present utility model, feature and advantage to become apparent from, under
Face combines accompanying drawing and is described in detail detailed description of the invention of the present utility model.
Elaborate detail in the following description so that fully understanding this utility model.But
This utility model can be different from alternate manner described here implement with multiple, this area skill
Art personnel can do similar popularization in the case of this utility model intension.Therefore this reality
Do not limited by following public being embodied as with novel.
Refer to the protection seed crystal type earthenware that Fig. 1-2, Fig. 1 are provided by this utility model embodiment
A kind of top view structural representation of the detailed description of the invention of crucible；Fig. 2 is that this utility model is implemented
A kind of front view structural representation of the detailed description of the invention of the protection seed crystal type crucible that example is provided
Figure.
In the concrete mode of one, described protection seed crystal type crucible, including Crucible body, wherein,
The inner bottom part of described Crucible body has groove 1.
Described protection seed crystal type crucible, by arranging groove 1 in crucible bottom, this allows for the end
The lowest part of the seed crystal in portion's groove 1 is less than seed crystal bottom at other, is keeping normal bottom seed
In the case of brilliant reserved height so that the seed crystal of remaining position will not fine melt, thus serve guarantor
Protect the effect of seed crystal, improve the quality of overall silicon ingot, obtain efficient silicon chip.
During owing to using half process of smelting so that start the liquid after fusing and flow into described groove 1,
For making in groove 1 difference of the temperature of liquid everywhere reduce, improve heat transfer efficiency, described
Groove 1 is annular groove 1.It should be noted that annular groove 1 here refers to groove 1
Not head and the tail, when the liquid in groove 1 can flow along a direction, may return to original
Position, the overall profile of groove 1 can be annular, it is also possible to be square or other shape
Shape, and it can also be multiple that the quantity of groove can be one, and this utility model is to groove
Shape and quantity are not specifically limited.
Due to crucible is heated the heater overwhelming majority time be to arrange the outside of crucible,
For making homogeneous heating, equal with the distance of crucible outer wall, for the liquid in minimizing groove 1
Temperature difference, improves the quality of overall silicon ingot, obtains efficient silicon chip, described annular groove 1 and institute
The spacing of the bottom inside wall 2 stating crucible is 20mm-40mm.
Further, at the spacing of the bottom inside wall 2 of described annular groove 1 and described crucible
Locate equal.
For reducing the processing technique of groove 1, the shape simultaneously also making groove 1 is more regular,
The temperature difference of the liquid in groove 1 is the least, and the longitudinal section of described annular groove 1 is rectangle, ladder
Shape or circular arc.It should be noted that the longitudinal section of described annular groove 1 can also is that other
Shape, such as elliptic arc etc., this is not especially limited by this utility model.
For guaranteeing the stability of crucible structure, the width of described annular groove 1 is
20mm-150mm, the degree of depth of described annular groove 1 is 2mm-10mm.
General described annular groove 1 is rectangle annular groove 1, by crucible bottom surrounding
Do annular groove 1 so that the lowest part of the seed crystal of bottom surrounding is less than seed crystal bottom middle,
In the case of keeping normal bottom seed crystal to reserve height so that the seed crystal of surrounding will not fine melt,
Thus serve the effect of protection seed crystal, this method is fairly simple, is effectively protected seed crystal,
Instead of other various methods by improving ingot furnace thermal field technique, and improve thermal field, technique
The inadequate significant effective of method, and different table universality is strong, and does groove in crucible bottom
The method of 1 has stronger universality.
In sum, the protection seed crystal type crucible of this utility model embodiment, by the bottom of crucible
Portion arranges groove, and this lowest part allowing for the seed crystal in bottom groove is less than seed bottom at other
Crystalline substance, in the case of keeping normal bottom seed crystal to reserve height so that the seed crystal of remaining position is not
Meeting fine melt, thus serve the effect of protection seed crystal, improve the quality of overall silicon ingot, obtain height
Effect silicon chip.
Above protection seed crystal type crucible provided by the utility model is described in detail.This
Literary composition applies specific case principle of the present utility model and embodiment are set forth, with
The explanation of upper embodiment is only intended to help to understand method of the present utility model and core concept thereof.
It should be pointed out that, for those skilled in the art, new without departing from this practicality
On the premise of type principle, it is also possible to this utility model is carried out some improvement and modification, these change
Enter and modification also falls in this utility model scope of the claims.
Claims (7)
1. a protection seed crystal type crucible, it is characterised in that include Crucible body, wherein,
The inner bottom part of described Crucible body has groove.
2. protection seed crystal type crucible as claimed in claim 1, it is characterised in that described recessed
Groove is annular groove.
3. protection seed crystal type crucible as claimed in claim 2, it is characterised in that described ring
Connected in star is 20mm-40mm with the spacing of the bottom inside wall of described crucible.
4. protection seed crystal type crucible as claimed in claim 3, it is characterised in that described ring
Connected in star is the most equal with the spacing of the bottom inside wall of described crucible.
5. protection seed crystal type crucible as claimed in claim 1, it is characterised in that described ring
The longitudinal section of connected in star is rectangle, trapezoidal or circular arc.
6. protection seed crystal type crucible as claimed in claim 1, it is characterised in that described ring
The width of connected in star is 20mm-150mm.
7. protection seed crystal type crucible as claimed in claim 1, it is characterised in that described ring
The degree of depth of connected in star is 2mm-10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620274267.4U CN205474106U (en) | 2016-04-05 | 2016-04-05 | Protection seed crystal type crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620274267.4U CN205474106U (en) | 2016-04-05 | 2016-04-05 | Protection seed crystal type crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205474106U true CN205474106U (en) | 2016-08-17 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620274267.4U Active CN205474106U (en) | 2016-04-05 | 2016-04-05 | Protection seed crystal type crucible |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106119958A (en) * | 2016-08-23 | 2016-11-16 | 常熟华融太阳能新型材料有限公司 | A kind of quartz ceramic crucible for polycrystalline silicon ingot casting |
| CN106591936A (en) * | 2017-01-12 | 2017-04-26 | 南通大学 | Charging method for sunken monocrystalline silicon-like seed crystal melting control |
| CN106591937A (en) * | 2017-01-12 | 2017-04-26 | 南通大学 | Depression type quasi single crystal seed crystal ingot melting crystallization process |
| CN106835271A (en) * | 2017-01-12 | 2017-06-13 | 南通大学 | A kind of loading method of buffer-type multi-crystalline silicon seed crystal fusing control |
-
2016
- 2016-04-05 CN CN201620274267.4U patent/CN205474106U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106119958A (en) * | 2016-08-23 | 2016-11-16 | 常熟华融太阳能新型材料有限公司 | A kind of quartz ceramic crucible for polycrystalline silicon ingot casting |
| CN106591936A (en) * | 2017-01-12 | 2017-04-26 | 南通大学 | Charging method for sunken monocrystalline silicon-like seed crystal melting control |
| CN106591937A (en) * | 2017-01-12 | 2017-04-26 | 南通大学 | Depression type quasi single crystal seed crystal ingot melting crystallization process |
| CN106835271A (en) * | 2017-01-12 | 2017-06-13 | 南通大学 | A kind of loading method of buffer-type multi-crystalline silicon seed crystal fusing control |
| CN106591936B (en) * | 2017-01-12 | 2019-07-16 | 南通大学 | A kind of loading method of depressed class seed of single crystal silicon fusing control |
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