CN202380126U - Heat shield device for straight pull silicon single crystal furnace - Google Patents
Heat shield device for straight pull silicon single crystal furnace Download PDFInfo
- Publication number
- CN202380126U CN202380126U CN201120439752XU CN201120439752U CN202380126U CN 202380126 U CN202380126 U CN 202380126U CN 201120439752X U CN201120439752X U CN 201120439752XU CN 201120439752 U CN201120439752 U CN 201120439752U CN 202380126 U CN202380126 U CN 202380126U
- Authority
- CN
- China
- Prior art keywords
- heat
- heat insulating
- urceolus
- reflecting layer
- shield device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a heat shield device for a straight pull silicon single crystal furnace. The heat shield device comprises an outer cylinder, a heat insulating layer, an inner cylinder, a heat reflecting layer, a heat insulating pad I and a heat insulating pad II, wherein the heat reflecting layer is arranged between the outer cylinder and the heat insulating layer; the heat insulating layer is arranged between the heat reflecting layer and the inner cylinder; the heat insulating pad I is arranged between the outer cylinder and the inner cylinder at the upper end of the heat shield device; one end of the heat insulating pad I is in connection and tight fit with the heat insulating layer; the heat insulating pad II is arranged between the outer cylinder and the inner cylinder at the bottom end of the heat shield device; and one end of the heat insulating pad II is in connection and tight fit with the heat insulating layer. The heat shield device has the characteristics that: heat radiation of a high-temperature furnace body and molten silicon to crystals can be more completely obstructed; the effect of heat radiation reflected by a molybdenum sheet heat reflecting layer to the crystals is effectively avoided; heat dissipation of the crystals is increased to a larger extent; and the growth speed of the crystals is increased. Higher thermal insulation of the molten silicon is realized; the blow-in power consumption is further reduced, the cost is low, and the implementation is easy.
Description
Technical field
The utility model relates to a kind of corollary apparatus of straight pulling silicon single crystal furnace, particularly a kind of heat shielding device that is used for straight pulling silicon single crystal furnace.
Background technology
At present, adopt the isometrical time spent 35-40h of 8 cun silicon single-crystal of about 2 meters of length of the every production of vertical pulling method, the blow-on time is long, power consumption is high, and production efficiency is low.Therefore, address the above problem, mainly be to improve crystalline growth velocity, shortens the crystal pulling time; Fundamentally, to add the thermograde of solid-liquid interface between macrocrystal and the molten silicon exactly, accelerate the release of crystallization latent heat, promptly improve the crystalline rate of cooling.The thermal radiation of high-temperature furnace body and molten silicon is to hinder effective, the quick refrigerative major cause of crystal.Generally, straight pulling silicon single crystal furnace such as is furnished with at the heat shielding of static pressure high purity graphite system, and it has the tubular construction of up/down perforation, and suitable for reading greater than end opening, and end opening is slightly larger than boule diameter.In the crystal pulling process, the heat shielding edge is placed in the crucible top with the same axis of crucible, and its lower edge and fusion silicon liquid level keep certain distance, surround crystal a section near solid-liquid interface.Mainly acting as of heat shielding: 1. intercept high-temperature furnace body and molten silicon to the crystalline thermal radiation, play heat shield effect, be beneficial to the crystal heat radiation, form the required thermograde of crystal growth, to improve crystalline growth velocity; 2. play guide functions, guiding is directly jetted near solid-liquid interface by the argon gas that blows under the single crystal growing furnace concubine more concentratedly, helps the crystal heat radiation more, strengthens the required thermograde of crystal growth, improves crystalline growth velocity; 3. the high temperature silicon melt is played insulation effect, practice thrift the blow-on energy consumption.Further improve crystalline growth velocity, require crystal to dispel the heat more effectively and quickly.The more important thing is, growing along with silicon single-crystal and related industries thereof, the diameter of czochralski silicon monocrystal requires constantly to increase.Crystal diameter is big more, and the crystallization latent heat of required release during crystal growth is many more; The crystal heat radiation is more difficult, more difficult raising crystalline growth velocity.Traditional heat shielding device can not satisfy current production requirement.Develop structure science, reasonable more, principle is advanced more, and the heat shielding device that more is appropriate to the Large-Diameter Czochralski Silicon growth becomes problem demanding prompt solution.
The name of Shanghai Thermo-magenetic Electronic Co., Ltd. is called in the patent (patent No. is open on September 22nd, 201010112330.1,2010) of " single crystal furnace device ", discloses a kind of single crystal furnace device that is used for czochralski silicon monocrystal, and it has comprised a kind of heat shielding device.This heat shielding device is made up of heat insulation material, heat shielding cover, reflector.The heat insulation material lower diameter is less than upper diameter, and its inboard and the outside are covered by internal heat shield cover and outer heat shielding cover respectively; Internal heat shield cover inboard is placed with reflector.During crystal pulling, heat shielding places the quartz crucible top, and its bottom and molten silicon keep certain distance; Reflector is around crystal.Heat insulation material plays insulation effect to molten silicon, has reduced power consumption; Reflector reaches the upwards reflection of thermal radiation of plane of crystal to improve crystal refrigerative effect, has improved crystalline growth velocity.Though this heat shielding device can improve crystalline growth velocity to a certain extent, cut down the consumption of energy, not enough below still existing:
At first, the thermal radiation of upwards being reflected by reflector still has major part to be absorbed by crystal, can not at utmost add the macrocrystal heat radiation.
Secondly; Outer heat shielding cover is the heat shielding cover that one is connected with the internal heat shield cover, has the direct heat transmission between outer heat shielding cover and the internal heat shield cover, is unfavorable for the reduction of internal heat shield cover temperature; And the reduction of internal heat shield cover temperature helps forming big thermograde with high temperature crystal, strengthens the crystalline heat radiation.
Summary of the invention
In view of the present situation of prior art, the utility model provides a kind of heat shielding device that is used for straight pulling silicon single crystal furnace, to enhance productivity, to reduce production costs.
The utility model is for realizing above-mentioned purpose; The technical scheme of being taked is: a kind of heat shielding device that is used for straight pulling silicon single crystal furnace; Comprise urceolus, thermofin and inner core, it is characterized in that: also comprise heat-reflecting layer, heat insulating mattress I, heat insulating mattress II, said heat-reflecting layer places between urceolus and the thermofin; Said thermofin places between heat-reflecting layer and the inner core; Said heat insulating mattress I is arranged between the urceolus and inner core of heat shielding device upper end, the end of heat insulating mattress I and the thermofin wringing fit of joining, and said heat insulating mattress II is arranged between the urceolus and inner core of heat shielding device bottom, the end of heat insulating mattress II and the thermofin wringing fit of joining.
The characteristics of the utility model are: at first; The bilayer structure that molybdenum sheet heat-reflecting layer and carbon felt thermofin form can cut off high-temperature furnace body more up hill and dale and melt silicon to the crystalline thermal radiation; The thermal radiation that effectively prevents simultaneously the reflection of molybdenum sheet heat-reflecting layer is to the crystalline effect; Strengthen the crystalline heat radiation more, improved crystalline growth velocity.
Secondly, does not have between graphite urceolus and the inner core and directly contact,, realized further having reduced the blow-on power consumption, saved production cost melting the stronger insulation of silicon by heat insulation carbon felt, carbon felt heat insulating mattress partition.
Once more, the graphite urceolus of the utility model heat shielding device, inner core are by the traditional method manufacturing, and other parts do not have special processing request, realization with low cost, easy.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Among the figure: 1, urceolus, 2, heat-reflecting layer, 3, thermofin, 4, heat insulating mattress I, 5, heat insulating mattress II, 6, inner core.
Embodiment
As shown in Figure 1, a kind of heat shielding device that is used for straight pulling silicon single crystal furnace comprises urceolus 1, thermofin 3 and inner core 6, also comprises heat-reflecting layer 2, heat insulating mattress I4, heat insulating mattress II5, and heat-reflecting layer 2 places between urceolus 1 and the thermofin 3; Thermofin 3 places between heat-reflecting layer 2 and the inner core 6; Heat insulating mattress I4 is arranged between the urceolus 1 and inner core 6 of heat shielding device upper end; The end of heat insulating mattress I4 and thermofin 3 wringing fit of joining; Heat insulating mattress II5 is arranged between the urceolus 1 and inner core 6 of heat shielding device low side, the end of heat insulating mattress II5 and thermofin 3 wringing fit of joining.Heat insulating mattress I4, heat insulating mattress II5 shape are identical, are the ring bodies of hollow.
By waiting static pressure high purity graphite to process urceolus, its top about 1/4th highly slightly is tapered uncovered, and all the other bottoms are the hollow cylinder profile, and there is outside horizontally extending edge on the top, and there is inside horizontally extending edge the bottom;
The thick cold rolling molybdenum sheet of 0.5mm is cut into rectangle, its long outer tube inner wall girth, the wide urceolus height that is slightly less than of equaling; The tapered uncovered simmering and bending of urceolus are highly pressed on top about 1/4th; This rectangle molybdenum sheet is close to the crooked laying of outer tube inner wall, forms heat-reflecting layer.This molybdenum sheet heat-reflecting layer can reflect high-temperature furnace body and molten silicon to the most of thermal radiation of crystalline, further adds the thermograde of solid-liquid interface between macrocrystal and the molten silicon, accelerates the release of crystallization latent heat, improves the crystalline rate of cooling, the quickening crystalline growth velocity.
The carbon felt is laid along molybdenum sheet heat-reflecting layer internal surface (face relative with the urceolus contact surface with molybdenum sheet), and thickness is certain, forms thermofin.Acting as of this carbon felt thermofin: cut off the thermal conduction between molybdenum sheet heat-reflecting layer and the inner core, be beneficial to the crystal heat radiation.Help forming the thermograde that is suitable for crystal growth.
It is heat insulating mattress I, heat insulating mattress II that the carbon felt is cut into corresponding annular, is positioned over urceolus top, bottom side edge edge respectively, as heat insulating mattress.
By waiting static pressure high purity graphite to process inner core, it is is inverted hollow frustum, 29 ° of cone angles; Big end has outside horizontally extending edge; Small end has " ┐ " shape edge; Whole wall thickness is even; This inner core edge and the same axis of urceolus are put into the urceolus that order has been laid molybdenum sheet heat-reflecting layer, carbon felt thermofin, form complete heat shielding device.In the pulling operation, heat shielding device edge is placed in the crucible top with the crucible same axis, and its bottom surface and molten silicon keep certain distance.
Edge, urceolus top external diameter equals the big end of inner core edge external diameter; The urceolus bottom side edge equals inner core small end external diameter along internal diameter.
Between the big end of edge, urceolus top and the inner core edge, separate by carbon felt heat insulating mattress between urceolus bottom side edge edge and the inner core small end base.This heat insulating mattress cuts off the heat exchange between urceolus and the inner core, is beneficial to the crystal heat radiation, further accelerates crystalline growth velocity.
Do not establish fastening, connection section between above-mentioned each integral part of heat shielding device, so that installation, dismounting, cleaning and part replacement.
The physical dimension of above-mentioned heat shielding device is confirmed according to concrete table and thermal field.
In addition; Be the molybdenum sheet heat-reflecting layer manufacturing of being more convenient for; Also can the thick cold rolling molybdenum sheet of 0.5mm be cut into some width and equate little rectangle; Its long urceolus height that is slightly less than, this little rectangle molybdenum sheet are close to separated continuously evenly placement between outer tube inner wall, adjacent, the adjacent molybdenum sheet in long limit, can reach the utility model purpose equally.
Adopt 22 cun thermal fields, the 135kg charging capacity draws 8 cun solar energy level silicon single crystals.Above-mentioned heat shielding device edge is placed in the crucible top with the crucible same axis.The control argon flow amount is 30-80slm, and furnace pressure maintains 15-20 T.Crucible rotation is 6-10 rev/min, and brilliant rotary speed is 8-12 rev/min.Carry out seeding, shouldering, commentaries on classics shoulder, isometrical, ending according to conventional czochralski process.Wherein, seeding crucible position control guide shell is apart from fusion silicon liquid level 15-35mm, and the head pulling rate is set at 75-80mm/h; Along with crystal length increases, pulling rate reduces gradually, and the middle part speed of growth is controlled at 65-70mm/h.Use present method can the V-bar that have 22 cun thermal field silicon monocrystal growths now be brought up to 1.23mm/h from 0.9mm/h, improved production efficiency, reduced production cost.Explain that the utility model straight pulling silicon single crystal furnace heat shielding device is suitable for the production of Large-Diameter Czochralski Silicon.
By waiting static pressure high purity graphite to process urceolus, its top about 1/4th highly slightly is tapered uncovered, and all the other bottoms are the hollow cylinder profile, and there is outside horizontally extending edge on the top, and there is inside horizontally extending edge the bottom.
The thick cold rolling molybdenum sheet of 0.5mm is cut into some width equates little rectangle, its long urceolus height that is slightly less than, this little rectangle molybdenum sheet are close to separated continuously even placement the between outer tube inner wall, adjacent, the adjacent molybdenum sheet in long limit, form heat-reflecting layer.
The carbon felt is laid along molybdenum sheet heat-reflecting layer internal surface (face relative with the urceolus contact surface with molybdenum sheet), and thickness is certain, forms thermofin.
The carbon felt is cut into corresponding annular, is positioned over urceolus top, bottom side edge edge, as heat insulating mattress.
By waiting static pressure high purity graphite to process inner core, it is is inverted hollow frustum, 29 ° of cone angles; Big end has outside horizontally extending edge; Small end has " ┐ " shape edge; Whole wall thickness is even; This inner core edge and the same axis of urceolus are put into the urceolus that order has been laid molybdenum sheet heat-reflecting layer, carbon felt thermofin, form complete heat shielding device.
Edge, urceolus top external diameter equals the big end of inner core edge external diameter; The urceolus bottom side edge equals inner core small end internal diameter along internal diameter.
Between the big end of edge, urceolus top and the inner core edge, separate by carbon felt heat insulating mattress between urceolus bottom side edge edge and the inner core small end base.
Adopt 20 cun thermal fields, the 95-100kg charging capacity draws 6.5 solar energy level silicon single crystals.Above-mentioned heat shielding device edge is placed in the crucible top with the crucible same axis.Carry out seeding, shouldering, commentaries on classics shoulder, isometrical, ending according to conventional czochralski process.Wherein, seeding crucible position control guide shell uses present method can the V-bar that have 20 cun thermal field silicon monocrystal growths now be brought up to 1.35mm/h from 1.22mm/h apart from fusion silicon liquid level 30-35mm, has improved production efficiency, has reduced production cost.
Claims (2)
1. heat shielding device that is used for straight pulling silicon single crystal furnace; Comprise urceolus (1), thermofin (3) and inner core (6); It is characterized in that: also comprise heat-reflecting layer (2), heat insulating mattress I (4), heat insulating mattress II (5), said heat-reflecting layer (2) places between urceolus (1) and the thermofin (3); Said thermofin (3) places between heat-reflecting layer (2) and the inner core (6); Said heat insulating mattress I (4) is arranged between the urceolus (1) and inner core (6) of heat shielding device upper end; The end of heat insulating mattress I (4) and thermofin (3) wringing fit of joining; Said heat insulating mattress II (5) is arranged between the urceolus (1) and inner core (6) of heat shielding device bottom, the end of heat insulating mattress II (5) and thermofin (3) wringing fit of joining.
2. a kind of heat shielding device that is used for straight pulling silicon single crystal furnace according to claim 1 is characterized in that: said heat insulating mattress I (4), heat insulating mattress II (5) shape are identical, are the ring bodies of hollow.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201120439752XU CN202380126U (en) | 2011-11-09 | 2011-11-09 | Heat shield device for straight pull silicon single crystal furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201120439752XU CN202380126U (en) | 2011-11-09 | 2011-11-09 | Heat shield device for straight pull silicon single crystal furnace |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202380126U true CN202380126U (en) | 2012-08-15 |
Family
ID=46628643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201120439752XU Expired - Lifetime CN202380126U (en) | 2011-11-09 | 2011-11-09 | Heat shield device for straight pull silicon single crystal furnace |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202380126U (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102352530A (en) * | 2011-11-09 | 2012-02-15 | 内蒙古中环光伏材料有限公司 | Heat shield device for CZ-Si single crystal furnace |
CN103290470A (en) * | 2013-05-21 | 2013-09-11 | 杭州海纳半导体有限公司 | Diameter transitional czochralski silicon growing method |
CN105483820A (en) * | 2015-12-09 | 2016-04-13 | 天津市环欧半导体材料技术有限公司 | Structure used for increasing czochralski monocrystalline silicon drawing speed |
CN111172585A (en) * | 2018-11-12 | 2020-05-19 | 上海新昇半导体科技有限公司 | Reflecting screen of single crystal growth furnace and single crystal growth furnace |
CN111893557A (en) * | 2020-07-01 | 2020-11-06 | 中国科学院上海微系统与信息技术研究所 | Thermal barrier device for isolating heat and smelting furnace |
CN111926379A (en) * | 2020-07-01 | 2020-11-13 | 中国科学院上海微系统与信息技术研究所 | Heat barrier device and smelting furnace |
-
2011
- 2011-11-09 CN CN201120439752XU patent/CN202380126U/en not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102352530A (en) * | 2011-11-09 | 2012-02-15 | 内蒙古中环光伏材料有限公司 | Heat shield device for CZ-Si single crystal furnace |
CN102352530B (en) * | 2011-11-09 | 2014-04-16 | 内蒙古中环光伏材料有限公司 | Heat shield device for CZ-Si single crystal furnace |
CN103290470A (en) * | 2013-05-21 | 2013-09-11 | 杭州海纳半导体有限公司 | Diameter transitional czochralski silicon growing method |
CN105483820A (en) * | 2015-12-09 | 2016-04-13 | 天津市环欧半导体材料技术有限公司 | Structure used for increasing czochralski monocrystalline silicon drawing speed |
CN111172585A (en) * | 2018-11-12 | 2020-05-19 | 上海新昇半导体科技有限公司 | Reflecting screen of single crystal growth furnace and single crystal growth furnace |
CN111893557A (en) * | 2020-07-01 | 2020-11-06 | 中国科学院上海微系统与信息技术研究所 | Thermal barrier device for isolating heat and smelting furnace |
CN111926379A (en) * | 2020-07-01 | 2020-11-13 | 中国科学院上海微系统与信息技术研究所 | Heat barrier device and smelting furnace |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102352530B (en) | Heat shield device for CZ-Si single crystal furnace | |
CN202380126U (en) | Heat shield device for straight pull silicon single crystal furnace | |
CN202558970U (en) | Single crystal like silicon ingot furnace | |
CN204825129U (en) | Thermal field structure of high -efficient polycrystalline silicon ingot furnace | |
CN102051674B (en) | Monocrystal ingot manufacturing device | |
CN102877129B (en) | A kind of crystalline silicon and preparation method thereof | |
CN203795018U (en) | Thermal field for producing sapphire single crystal by edge-defined film-fed crystal growth method | |
CN102628184A (en) | Method for growing gem crystals by way of vacuum induction heating and device realizing method | |
CN105154978B (en) | Gallium arsenide polycrystal magnetic field growth furnace and growing method | |
CN205893453U (en) | Guide cylinder for single crystal furnaces | |
CN104372407B (en) | A kind of crystalline silicon directional solidification growth equipment and method | |
CN205474106U (en) | Protection seed crystal type crucible | |
CN207294942U (en) | A kind of efficient monocrystal growing furnace with graphite and the compound heat shielding of water cooling | |
CN202786496U (en) | Composite heat shielding device applied to single crystal furnace | |
CN104264213A (en) | EFG (edge-defined film-fed growth) device of large-size doped sapphire crystals and growth process thereof | |
CN205839185U (en) | A kind of special-shaped guide shell structure | |
CN102732943A (en) | Method for producing monocrystalline silicon cast ingot | |
CN108179463A (en) | The flow-guiding structure of major diameter single crystal drawing process and method of river diversion in vertical pulling method | |
CN103628126A (en) | Manufacturing method for monocrystalloid crystalline silica ingot and polysilicon ingot furnace | |
CN206902281U (en) | A kind of single crystal growing furnace | |
CN201942779U (en) | Heat shield device applied to single crystal furnace | |
CN109321975A (en) | Monocrystalline silicon directional solidification seeding module | |
CN203065635U (en) | Bottom enhanced cooling device | |
CN202187081U (en) | Thermal field for monocrystal furnace | |
CN201605350U (en) | Thermal field device used for reducing crystal drawing power of single crystal furnace |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210623 Address after: 300384 No.12 Haitai East Road, Huayuan Industrial Zone, New Technology Industrial Park, Binhai New Area, Tianjin Patentee after: TIANJIN ZHONGHUAN SEMICONDUCTOR Co.,Ltd. Address before: 010070 the Inner Mongolia Autonomous Region Hohhot Jinqiao Development Zone Industrial two district treasure street Patentee before: INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20120815 |
|
CX01 | Expiry of patent term |