CN102352530A - Heat shield device for CZ-Si single crystal furnace - Google Patents
Heat shield device for CZ-Si single crystal furnace Download PDFInfo
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- CN102352530A CN102352530A CN2011103510483A CN201110351048A CN102352530A CN 102352530 A CN102352530 A CN 102352530A CN 2011103510483 A CN2011103510483 A CN 2011103510483A CN 201110351048 A CN201110351048 A CN 201110351048A CN 102352530 A CN102352530 A CN 102352530A
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Abstract
The invention relates to a heat shield device for a CZ-Si single crystal furnace and the device comprises an outer barrel, a heat protective layer, an inner barrel, a heat reflecting layer, a heat insulation pad I and a heat insulation pad II, wherein the heat reflecting layer is arranged between the outer barrel and the heat protective layer; the heat protective layer is arranged between the heat reflecting layer and the inner barrel; the heat insulation pad I is arranged between the outer barrel and the inner barrel at the upper end of the heat shield device; one end of the heat insulation pad I is tightly matched with the heat protective layer; the heat insulation pad II is arranged between the outer barrel and the inner barrel at the bottom end of the heat shield device; and one end of the heat insulation pad II is tightly matched with the heat protective layer. The heat shield device is characterized in that the action of the reflected heat radiation of a molybdenum sheet heat reflecting layer on crystals can be effectively prevented, the heat dissipation of crystals can be increased greatly and the crystal growth speed can be improved. A better heat preservation effect on the fused silica can be realized, the blow-in power consumption can be further reduced, and the production cost is saved. The heat shield device has low cost and is easy to realize.
Description
Technical field
The present invention relates to a kind of corollary apparatus of straight pulling silicon single crystal furnace, particularly a kind of heat shielding device that is used for straight pulling silicon single crystal furnace.
Background technology
At present, adopt the isometrical time spent 35-40h of 8 cun silicon single-crystal of about 2 meters of length of the every production of vertical pulling method, the blow-on time is long, power consumption is high, and production efficiency is low.Therefore, address the above problem, mainly be to improve crystalline growth velocity, shortens the crystal pulling time; Fundamentally, to add the thermograde of solid-liquid interface between macrocrystal and the molten silicon exactly, accelerate the release of crystallization latent heat, promptly improve the crystalline rate of cooling.The thermal radiation of high-temperature furnace body and molten silicon is to hinder effective, the quick refrigerative major cause of crystal.Generally, straight pulling silicon single crystal furnace such as is furnished with at the heat shielding of static pressure high purity graphite system, and it has the tubular construction of up/down perforation, and suitable for reading greater than end opening, and end opening is slightly larger than boule diameter.In the crystal pulling process, the heat shielding edge is placed in the crucible top with the same axis of crucible, and its lower edge and fusion silicon liquid level keep certain distance, surround crystal a section near solid-liquid interface.Mainly acting as of heat shielding: 1. intercept high-temperature furnace body and molten silicon to the crystalline thermal radiation, play heat shield effect, be beneficial to the crystal heat radiation, form the required thermograde of crystal growth, to improve crystalline growth velocity; 2. play guide functions, guiding is directly jetted near solid-liquid interface by the argon gas that blows under the single crystal growing furnace concubine more concentratedly, helps the crystal heat radiation more, strengthens the required thermograde of crystal growth, improves crystalline growth velocity; 3. the high temperature silicon melt is played insulation effect, practice thrift the blow-on energy consumption.Further improve crystalline growth velocity, require crystal to dispel the heat more effectively and quickly.The more important thing is, growing along with silicon single-crystal and related industries thereof, the diameter of czochralski silicon monocrystal requires constantly to increase.Crystal diameter is big more, and the crystallization latent heat of required release during crystal growth is many more; The crystal heat radiation is more difficult, more difficult raising crystalline growth velocity.Traditional heat shielding device can not satisfy current production requirement.Develop structure science, reasonable more, principle is advanced more, and the heat shielding device that more is appropriate to the Large-Diameter Czochralski Silicon growth becomes problem demanding prompt solution.
The name of Shanghai Thermo-magenetic Electronic Co., Ltd. is called in the patent (patent No. is open on September 22nd, 201010112330.1,2010) of " single crystal furnace device ", discloses a kind of single crystal furnace device that is used for czochralski silicon monocrystal, and it has comprised a kind of heat shielding device.This heat shielding device is made up of heat insulation material, heat shielding cover, reflector.The heat insulation material lower diameter is less than upper diameter, and its inboard and the outside are covered by internal heat shield cover and outer heat shielding cover respectively; Internal heat shield cover inboard is placed with reflector.During crystal pulling, heat shielding places the quartz crucible top, and its bottom and molten silicon keep certain distance; Reflector is around crystal.Heat insulation material plays insulation effect to molten silicon, has reduced power consumption; Reflector reaches the upwards reflection of thermal radiation of plane of crystal to improve crystal refrigerative effect, has improved crystalline growth velocity.Though this heat shielding device can improve crystalline growth velocity to a certain extent, cut down the consumption of energy, still exist following not enough:
At first, the thermal radiation of upwards being reflected by reflector still has major part to be absorbed by crystal, can not at utmost add the macrocrystal heat radiation.
Secondly; Outer heat shielding cover is the heat shielding cover that one is connected with the internal heat shield cover, has the direct heat transmission between outer heat shielding cover and the internal heat shield cover, is unfavorable for the reduction of internal heat shield cover temperature; And the reduction of internal heat shield cover temperature helps forming big thermograde with high temperature crystal, strengthens the crystalline heat radiation.
Summary of the invention
In view of the present situation of prior art, the present invention provides a kind of heat shielding device that is used for straight pulling silicon single crystal furnace, to enhance productivity, to reduce production costs.
The present invention is for realizing above-mentioned purpose; The technical scheme of being taked is: a kind of heat shielding device that is used for straight pulling silicon single crystal furnace; Comprise urceolus, thermofin and inner core, it is characterized in that: also comprise heat-reflecting layer, heat insulating mattress I, heat insulating mattress II, said heat-reflecting layer places between urceolus and the thermofin; Said thermofin places between heat-reflecting layer and the inner core; Said heat insulating mattress I is arranged between the urceolus and inner core of heat shielding device upper end, the end of heat insulating mattress I and the thermofin wringing fit of joining, and said heat insulating mattress II is arranged between the urceolus and inner core of heat shielding device bottom, the end of heat insulating mattress II and the thermofin wringing fit of joining.
Characteristics of the present invention are: at first; The bilayer structure that molybdenum sheet heat-reflecting layer and carbon felt thermofin form can cut off high-temperature furnace body more up hill and dale and melt silicon to the crystalline thermal radiation; The thermal radiation that effectively prevents simultaneously the reflection of molybdenum sheet heat-reflecting layer is to the crystalline effect; Strengthen the crystalline heat radiation more, improved crystalline growth velocity.
Secondly, does not have between graphite urceolus and the inner core and directly contact,, realized further having reduced the blow-on power consumption, saved production cost melting the stronger insulation of silicon by heat insulation carbon felt, carbon felt heat insulating mattress partition.
Once more, the graphite urceolus of heat shielding device of the present invention, inner core are by the traditional method manufacturing, and other parts do not have special processing request, realization with low cost, easy.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Among the figure: 1, urceolus, 2, heat-reflecting layer, 3, thermofin, 4, heat insulating mattress I, 5, heat insulating mattress II, 6, inner core.
Embodiment
As shown in Figure 1, a kind of heat shielding device that is used for straight pulling silicon single crystal furnace comprises urceolus 1, thermofin 3 and inner core 6, also comprises heat-reflecting layer 2, heat insulating mattress I4, heat insulating mattress II5, and heat-reflecting layer 2 places between urceolus 1 and the thermofin 3; Thermofin 3 places between heat-reflecting layer 2 and the inner core 6; Heat insulating mattress I4 is arranged between the urceolus 1 and inner core 6 of heat shielding device upper end; The end of heat insulating mattress I4 and thermofin 3 wringing fit of joining; Heat insulating mattress II5 is arranged between the urceolus 1 and inner core 6 of heat shielding device low side, the end of heat insulating mattress II5 and thermofin 3 wringing fit of joining.Heat insulating mattress I4, heat insulating mattress II5 shape are identical, are the ring bodies of hollow.
By waiting static pressure high purity graphite to process urceolus, its top about 1/4th highly slightly is tapered uncovered, and all the other bottoms are the hollow cylinder profile, and there is outside horizontally extending edge on the top, and there is inside horizontally extending edge the bottom.
The thick cold rolling molybdenum sheet of 0.5mm is cut into rectangle, its long outer tube inner wall girth, the wide urceolus height that is slightly less than of equaling; The tapered uncovered simmering and bending of urceolus are highly pressed on top about 1/4th; This rectangle molybdenum sheet is close to the crooked laying of outer tube inner wall, forms heat-reflecting layer.This molybdenum sheet heat-reflecting layer can reflect high-temperature furnace body and molten silicon to the most of thermal radiation of crystalline, further adds the thermograde of solid-liquid interface between macrocrystal and the molten silicon, accelerates the release of crystallization latent heat, improves the crystalline rate of cooling, the quickening crystalline growth velocity.
The carbon felt is laid along molybdenum sheet heat-reflecting layer internal surface (face relative with the urceolus contact surface with molybdenum sheet), and thickness is certain, forms thermofin.Acting as of this carbon felt thermofin: cut off the thermal conduction between molybdenum sheet heat-reflecting layer and the inner core, be beneficial to the crystal heat radiation.Help forming the thermograde that is suitable for crystal growth.
It is heat insulating mattress I, heat insulating mattress II that the carbon felt is cut into corresponding annular, is positioned over urceolus top, bottom side edge edge respectively, as heat insulating mattress.
By waiting static pressure high purity graphite to process inner core, it is is inverted hollow frustum, 29 ° of cone angles; Big end has outside horizontally extending edge; Small end has " ┐ " shape edge; Whole wall thickness is even; This inner core edge and the same axis of urceolus are put into the urceolus that order has been laid molybdenum sheet heat-reflecting layer, carbon felt thermofin, form complete heat shielding device.In the pulling operation, heat shielding device edge is placed in the crucible top with the crucible same axis, and its bottom surface and molten silicon keep certain distance.
Edge, urceolus top external diameter equals the big end of inner core edge external diameter; The urceolus bottom side edge equals inner core small end external diameter along internal diameter.
Between the big end of edge, urceolus top and the inner core edge, separate by carbon felt heat insulating mattress between urceolus bottom side edge edge and the inner core small end base.This heat insulating mattress cuts off the heat exchange between urceolus and the inner core, is beneficial to the crystal heat radiation, further accelerates crystalline growth velocity.
Do not establish fastening, connection section between above-mentioned each integral part of heat shielding device, so that installation, dismounting, cleaning and part replacement.
The physical dimension of above-mentioned heat shielding device is confirmed according to concrete table and thermal field.
In addition; Be the molybdenum sheet heat-reflecting layer manufacturing of being more convenient for, also the thick cold rolling molybdenum sheet of 0.5mm can be cut into some width and equate little rectangle, its long urceolus height that is slightly less than; This little rectangle molybdenum sheet is close to separated continuously evenly placement between outer tube inner wall, adjacent, the adjacent molybdenum sheet in long limit, can reach the object of the invention equally.
Adopt 22 cun thermal fields, the 135kg charging capacity draws 8 cun solar energy level silicon single crystals.Above-mentioned heat shielding device edge is placed in the crucible top with the crucible same axis.The control argon flow amount is 30-80slm, and furnace pressure maintains 15-20 T.Crucible rotation is 6-10 rev/min, and brilliant rotary speed is 8-12 rev/min.Carry out seeding, shouldering, commentaries on classics shoulder, isometrical, ending according to conventional czochralski process.Wherein, seeding crucible position control guide shell is apart from fusion silicon liquid level 15-35mm, and the head pulling rate is set at 75-80mm/h; Along with crystal length increases, pulling rate reduces gradually, and the middle part speed of growth is controlled at 65-70mm/h.Use present method the V-bar that has 22 cun thermal field silicon monocrystal growths now can be brought up to 1.23mm/h from 0.9mm/h, improved production efficiency, reduced production cost.Illustrate that straight pulling silicon single crystal furnace heat shielding device of the present invention is suitable for the production of Large-Diameter Czochralski Silicon.
By waiting static pressure high purity graphite to process urceolus, its top about 1/4th highly slightly is tapered uncovered, and all the other bottoms are the hollow cylinder profile, and there is outside horizontally extending edge on the top, and there is inside horizontally extending edge the bottom.
The thick cold rolling molybdenum sheet of 0.5mm is cut into some width equates little rectangle, its long urceolus height that is slightly less than, this little rectangle molybdenum sheet are close to separated continuously even placement the between outer tube inner wall, adjacent, the adjacent molybdenum sheet in long limit, form heat-reflecting layer.
The carbon felt is laid along molybdenum sheet heat-reflecting layer internal surface (face relative with the urceolus contact surface with molybdenum sheet), and thickness is certain, forms thermofin.
The carbon felt is cut into corresponding annular, is positioned over urceolus top, bottom side edge edge, as heat insulating mattress.
By waiting static pressure high purity graphite to process inner core, it is is inverted hollow frustum, 29 ° of cone angles; Big end has outside horizontally extending edge; Small end has " ┐ " shape edge; Whole wall thickness is even; This inner core edge and the same axis of urceolus are put into the urceolus that order has been laid molybdenum sheet heat-reflecting layer, carbon felt thermofin, form complete heat shielding device.
Edge, urceolus top external diameter equals the big end of inner core edge external diameter; The urceolus bottom side edge equals inner core small end internal diameter along internal diameter.
Between the big end of edge, urceolus top and the inner core edge, separate by carbon felt heat insulating mattress between urceolus bottom side edge edge and the inner core small end base.
Adopt 20 cun thermal fields, the 95-100kg charging capacity draws 6.5 solar energy level silicon single crystals.Above-mentioned heat shielding device edge is placed in the crucible top with the crucible same axis.Carry out seeding, shouldering, commentaries on classics shoulder, isometrical, ending according to conventional czochralski process.Wherein, seeding crucible position control guide shell uses present method the V-bar that has 20 cun thermal field silicon monocrystal growths now can be brought up to 1.35mm/h from 1.22mm/h apart from fusion silicon liquid level 30-35mm, has improved production efficiency, has reduced production cost.
Claims (2)
1. heat shielding device that is used for straight pulling silicon single crystal furnace; Comprise urceolus (1), thermofin (3) and inner core (6); It is characterized in that: also comprise heat-reflecting layer (2), heat insulating mattress I (4), heat insulating mattress II (5), said heat-reflecting layer (2) places between urceolus (1) and the thermofin (3); Said thermofin (3) places between heat-reflecting layer (2) and the inner core (6); Said heat insulating mattress I (4) is arranged between the urceolus (1) and inner core (6) of heat shielding device upper end; The end of heat insulating mattress I (4) and thermofin (3) wringing fit of joining; Said heat insulating mattress II (5) is arranged between the urceolus (1) and inner core (6) of heat shielding device bottom, the end of heat insulating mattress II (5) and thermofin (3) wringing fit of joining.
2. the heat shielding device that is used for straight pulling silicon single crystal furnace according to claim 1 is characterized in that: said heat insulating mattress I (4), heat insulating mattress II (5) shape are identical, are the ring bodies of hollow.
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| CN201110351048.3A CN102352530B (en) | 2011-11-09 | 2011-11-09 | Heat shield device for CZ-Si single crystal furnace |
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| CN201110351048.3A CN102352530B (en) | 2011-11-09 | 2011-11-09 | Heat shield device for CZ-Si single crystal furnace |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102560625A (en) * | 2012-03-23 | 2012-07-11 | 内蒙古中环光伏材料有限公司 | Device and method for prolonging edge minority carrier lifetime of N-type silicon single crystal |
| CN102732949A (en) * | 2012-06-21 | 2012-10-17 | 芜湖昊阳光能股份有限公司 | Draft tube structure of graphite thermal field |
| CN103710742A (en) * | 2013-12-30 | 2014-04-09 | 上海涌真机械有限公司 | Single crystal furnace capable of improving czochralski-method single crystal growth speed |
| CN107109685A (en) * | 2014-12-17 | 2017-08-29 | 西格里碳素欧洲公司 | Double-walled graphite funnel |
| CN108609864A (en) * | 2016-12-12 | 2018-10-02 | 银川隆基硅材料有限公司 | A kind of plated film heat insulation reflecting quartz heat shielding and preparation method thereof |
| TWI664326B (en) * | 2017-04-05 | 2019-07-01 | 日商Ｓｕｍｃｏ股份有限公司 | Heat shielding member, single crystal pulling apparatus and method for manufacturing a single crystal silicon ingot |
| CN111020691A (en) * | 2019-12-03 | 2020-04-17 | 徐州鑫晶半导体科技有限公司 | System and control method for drawing crystal bar |
| CN111172585A (en) * | 2018-11-12 | 2020-05-19 | 上海新昇半导体科技有限公司 | Reflecting screen of single crystal growth furnace and single crystal growth furnace |
| CN111270301A (en) * | 2018-12-04 | 2020-06-12 | 上海新昇半导体科技有限公司 | Guide cylinder of crystal growth furnace and crystal growth furnace |
| CN111519241A (en) * | 2019-02-01 | 2020-08-11 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
| CN113151892A (en) * | 2021-04-27 | 2021-07-23 | 曲靖阳光能源硅材料有限公司 | Heat shield device for pulling single crystal and monocrystalline silicon production equipment |
| US20220002901A1 (en) * | 2020-07-01 | 2022-01-06 | Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences | Heat shield device and smelting furnace |
| DE102020127336B4 (en) | 2019-10-17 | 2023-04-20 | Zing Semiconductor Corporation | semiconductor crystal growth device |
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| CN102560625A (en) * | 2012-03-23 | 2012-07-11 | 内蒙古中环光伏材料有限公司 | Device and method for prolonging edge minority carrier lifetime of N-type silicon single crystal |
| CN102732949A (en) * | 2012-06-21 | 2012-10-17 | 芜湖昊阳光能股份有限公司 | Draft tube structure of graphite thermal field |
| CN103710742A (en) * | 2013-12-30 | 2014-04-09 | 上海涌真机械有限公司 | Single crystal furnace capable of improving czochralski-method single crystal growth speed |
| CN107109685A (en) * | 2014-12-17 | 2017-08-29 | 西格里碳素欧洲公司 | Double-walled graphite funnel |
| CN108609864B (en) * | 2016-12-12 | 2022-01-14 | 银川隆基硅材料有限公司 | Film-coated heat-insulation reflective quartz heat shield and preparation method thereof |
| CN108609864A (en) * | 2016-12-12 | 2018-10-02 | 银川隆基硅材料有限公司 | A kind of plated film heat insulation reflecting quartz heat shielding and preparation method thereof |
| TWI664326B (en) * | 2017-04-05 | 2019-07-01 | 日商Ｓｕｍｃｏ股份有限公司 | Heat shielding member, single crystal pulling apparatus and method for manufacturing a single crystal silicon ingot |
| US11473210B2 (en) | 2017-04-05 | 2022-10-18 | Sumco Corporation | Heat shielding member, single crystal pulling apparatus, and method of producing single crystal silicon ingot |
| JP7025395B2 (en) | 2018-11-12 | 2022-02-24 | 上海新昇半導體科技有限公司 | Reflective screen of single crystal growth furnace and single crystal growth furnace |
| CN111172585A (en) * | 2018-11-12 | 2020-05-19 | 上海新昇半导体科技有限公司 | Reflecting screen of single crystal growth furnace and single crystal growth furnace |
| JP2020079192A (en) * | 2018-11-12 | 2020-05-28 | 上海新昇半導體科技有限公司 | Reflection screen of single crystal growth furnace and single crystal growth furnace |
| KR20200055654A (en) * | 2018-11-12 | 2020-05-21 | 징 세미콘덕터 코포레이션 | A reflective screen of a monocrystal growth furnace and the monocrystal growth furnace |
| TWI722449B (en) * | 2018-11-12 | 2021-03-21 | 大陸商上海新昇半導體科技有限公司 | A reflective screen of a monocrystal growth furnace and the monocrystal growth furnace |
| KR102299654B1 (en) * | 2018-11-12 | 2021-09-08 | 징 세미콘덕터 코포레이션 | A reflective screen of a monocrystal growth furnace and the monocrystal growth furnace |
| CN111270301A (en) * | 2018-12-04 | 2020-06-12 | 上海新昇半导体科技有限公司 | Guide cylinder of crystal growth furnace and crystal growth furnace |
| CN111519241B (en) * | 2019-02-01 | 2021-12-17 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
| CN111519241A (en) * | 2019-02-01 | 2020-08-11 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
| JP2022518858A (en) * | 2019-02-01 | 2022-03-16 | ヅィング セミコンダクター コーポレーション | Semiconductor crystal growth device |
| JP7295252B2 (en) | 2019-02-01 | 2023-06-20 | ヅィング セミコンダクター コーポレーション | Semiconductor crystal growth equipment |
| DE102020127336B4 (en) | 2019-10-17 | 2023-04-20 | Zing Semiconductor Corporation | semiconductor crystal growth device |
| CN111020691A (en) * | 2019-12-03 | 2020-04-17 | 徐州鑫晶半导体科技有限公司 | System and control method for drawing crystal bar |
| US20220002901A1 (en) * | 2020-07-01 | 2022-01-06 | Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences | Heat shield device and smelting furnace |
| CN113151892A (en) * | 2021-04-27 | 2021-07-23 | 曲靖阳光能源硅材料有限公司 | Heat shield device for pulling single crystal and monocrystalline silicon production equipment |
| CN117259674A (en) * | 2023-10-31 | 2023-12-22 | 洛阳易普特智能科技有限公司 | Feeding device and method of sand mold 3D printing equipment |
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Effective date of registration: 20180604 Address after: 010020 19 Amur street, Saihan District, Hohhot, the Inner Mongolia Autonomous Region. Patentee after: INNER MONGOLIA ZHONGHUAN XIEXIN PHOTOVOLTAIC MATERIAL Co.,Ltd. Address before: 010070 the Inner Mongolia Autonomous Region Hohhot Jinqiao Development Zone Industrial two district treasure street Patentee before: INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL Co.,Ltd. |
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Address after: No.19, Amur South Street, Saihan District, Hohhot, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Zhonghuan Crystal Materials Co.,Ltd. Address before: 010020 19 Amur street, Saihan District, Hohhot, the Inner Mongolia Autonomous Region. Patentee before: INNER MONGOLIA ZHONGHUAN XIEXIN PHOTOVOLTAIC MATERIAL Co.,Ltd. |
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